# Power MOSFET, P Channel, 20 V, 3 A, 0.08 ohm, TSMT, Surface Mount
**URL**: https://novapart.co/products/RTQ030P02TR/power-mosfet-p-channel-20-v-3-a-008-ohm-tsmt
**SKU**: RTQ030P02TR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: β¬0.0760
**Stock**: 10+
## Description
Transistor Polarity:P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-2V; Power Dissipatio
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TSMT |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150Β°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.08ohm |
| Gate Source Threshold Voltage Max | 2V |
## Datasheet
π [Download PDF](https://novapart.co/datasheet/farnell:1525555/)
RTQ030P02
Transistor
## 2.5V Drive Pch MOS FET
## **RTQ030P02**
## οΏ½ **Structure**
## Silicon P-channel MOSFET
## οΏ½ **Features**
1) Low On-resistance.(110m⦠at 2.5V)
- 2) High Power Package.
3) High speed switching.
- 4) Low voltage drive.(2.5V)
οΏ½ **Applications** DC-DC converter
## οΏ½ **External dimensions** (Unit : mm)
**==> picture [185 x 129] intentionally omitted <==**
**----- Start of picture text -----**
TSMT6
1.0MAX
2.9
1.9 0.85
0.95 0.95 0.7
(6) (5) (4)
0~0.1
(1) (2) (3)
1pin mark
0.4 0.16
Each lead has same dimensions
Abbreviated symbol : TS
1.6 2.8
0.60.3~
**----- End of picture text -----**
## οΏ½ **Packaging specifications**
|Type|Package|Taping|
|---|---|---|
||Code|TR|
||Basic ordering unit
(pieces)|3000|
|RTQ030P02|||
## οΏ½ **Equivalent circuit**
**==> picture [150 x 125] intentionally omitted <==**
**----- Start of picture text -----**
(6) (5) (4)
β 2
β 1
(1) Drain
(2) Drain
(3) Gate
(1) (2) (3) (4) Source
β 1 ESD PROTECTION DIODE (5) Drain
β 2 BODY DIODE (6) Drain
**----- End of picture text -----**
## οΏ½ **Absolute maximum ratings** (Ta=25Β°C)
|Parameter||Symbol|Limits|Unit|
|---|---|---|---|---|
|Drainβsource voltage||VDSS|β20|V|
|Gateβsource voltage||VGSS|Β±12|V|
|Drain current|Continuous|ID|Β±3|A|
||Pulsed|IDP
β1|Β±12|A|
|Source current
(Body diode)|Continuous|IS|β1|A|
||Pulsed|ISP
β1|β4|A|
|Total power dissipation||PD
β2|1.25|W|
|Channel temperature||Tch|150|Β°C|
|Range of Storage temperature||Tstg|β55 to+150|Β°C|
- β 1 Pw β€ 10 Β΅ s, Duty cycle β€ 1%
- β 2 Mounted on a ceramic board
## οΏ½ **Thermal resistance**
|οΏ½**Thermal resistance**||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Channel to ambient|Rth(ch-a)
β|100|Β°C / W|
|βMounted on a ceramic board.||||
Rev.A 1/4
RTQ030P02
Transistor
## οΏ½ **Electrical characteristics** (Ta=25Β°C)
|οΏ½**Electrical characteristics**(Ta|=25Β°C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Gate-source leakage|IGSS|β|β|Β±10|Β΅A|VGS=Β±12V, VDS=0V|
|Drain-source breakdown voltage|V(BR)DSS|β20|β|β|V|ID=β1**,**VGS=0V
mA|
|Zero gate voltage drain current|IDSS|β|β|β1|Β΅A|VDS=β20V, VGS=0V|
|Gate threshold voltage|VGS(th)|β0.7|β|β2.0|V|VDS=β10V, ID=β1
mA|
|Static drain-source on-state
resistance|RDS(on)
β|β|60|80|mβ¦|ID=β3A, VGS=β4.5V|
|||β|65|90|mβ¦|ID=β3A, VGS=β4V|
|||β|110|150|mβ¦|ID=β1.5A, VGS=β2.5V|
|Foward transfer admittance|Yfs
β|2.0|β|β|S|VDS=β10V, ID=β1.5A|
|Input capacitance|Ciss|β|800|β|pF|VDS=β10V,VGS=0V
f=1MHz|
|Output capacitance|Coss|β|150|β|pF||
|Reverse transfer capacitance|Crss|β|100|β|pF||
|Turn-on delay time|td(on)
β|β|15|β|ns|ID=β1.5A
VDDβ15V
VGS=β4.5V
RL=10β¦
RG=10β¦|
|Rise time|tr
β|β|27|β|ns||
|Turn-off delay time|td(off)
β|β|50|β|ns||
|Fall time|tf
β|β|20|β|ns||
|Total gate charge
Gate-source charge|Qg|β|9.0|β|nC|VDDβ15V
VGS=β4.5V
ID=β3A|
||Qgs|β|1.6|β|nC||
|Gate-drain charge|Qgd|β|4.6|β|nC||
β PULSED
## οΏ½ **Body diode characteristics** (Source-drain) (Ta=25Β°C)
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD|β|β|β1.2|V|IS=β1A, VGS=0V|
Rev.A
2/4
RTQ030P02
Transistor
## οΏ½ **Electrical characteristic curves**
**==> picture [433 x 539] intentionally omitted <==**
**----- Start of picture text -----**
10 1000 1000
VDS =β 10V Ta = 25 C VGS =β 4.5V
pulsed pulsed pulsed
1 Ta = 125 β 752525 °° Β° Β° CCCC VGS β = β 4.5V10V β 4V Ta=125 β 257525 °°°° CCCC
0.1 100 100
0.01
0.0010 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 100.1 1 10 100.1 1 10
Gate β Source Voltage : β VGS [ V ] Drain Current : β ID [ A ] Drain Current : β ID [ A ]
Fig.2 Static Drain β Source On β State
Fig.1 Typical Transfer Characteristics Resistance vs.Drain Current Fig.3 Static Drain β Source On β State
Resistance vs.Drain Current
1000 1000 10
VGS =β 4V VGS =β 2.5V VGS = 0V
pulsed pulsed pulsed
Ta=125 β 257525 °°°° CCCC 1 Ta=125 β 25 7525 Β° °°° C CCC
100 100
Ta=125 β 257525 °°°° CCCC 0.1
100.1 1 10 100.1 1 10 0.010 0.5 1.0 1.5 2.0
Drain Current : β ID [ A ] Drain Current : β ID [ A ] Source β Drain Voltage : β VSD [ V ]
Fig.4 Static Drain Resistance vs.Drain β Source On β Current β State Fig.5 Static Drain Resistance vs.Drain β Source On β Current β State Fig.6 Reverse Drain Current vs. Source-Drain Voltage
10000 1000 8
1000 TafV = GS1MHz = 25 C = 0V 100 tf TaVpulsedVRDDGSG == 25 C =β=β 1015V4.5V β¦ 76 Ta V pR ID ulsedDDG =β == 25 C =β 10 3.0V15V β¦
Ciss 5
td ( off )
4
td ( on )
100 Coss 10 tr 3
Crss
2
1
100.01 0.1 1 10 100 0.011 0.1 1 10 0 0 2 4 6 8 10 12
Drain β Source Voltage : β VDS [ V ] Drain Current : β ID [ A ]
Fig.7 Typical Capactitance Total Gate Charge : Qg [ nC ]
vs.Drain β Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics
β¦]
m
)[
( onDS
R
(A)ID β State Resistance β β¦] m
State Resistance β )[( onDS
R
Source On
β
Drain Current : Source On β
Static Drain
Static Drain
AI ][ DR : β
State ResistanceSource On ββ R β¦])[( monDS State ResistanceSource On ββ R β¦])[( monDS
Reverse Drain Current
Static Drain Static Drain
V ][
C CapacitancepF ] [ : Switching Time ][ t ns : GS
Gate-Source Voltage: -V
**----- End of picture text -----**
Rev.A
3/4
RTQ030P02
Transistor
## οΏ½ **Measurement circuits**
**==> picture [125 x 64] intentionally omitted <==**
**----- Start of picture text -----**
VGS
ID VDS
D.U.T. RL
RG
VDD
**----- End of picture text -----**
Fig.10 Switching Time Measurement Circuit
**==> picture [137 x 71] intentionally omitted <==**
**----- Start of picture text -----**
VGS ID VDS
IG(Const)
D.U.T. RL
RG
VDD
**----- End of picture text -----**
Fig.12 Gate Charge Measurement Circuit
**==> picture [176 x 138] intentionally omitted <==**
**----- Start of picture text -----**
Pulse Width
VGS
10% 50%
50% 90%
10% 10%
VDS 90% 90%
td(on) tr td(off) tf
ton toff
**----- End of picture text -----**
Fig.11 Switching Waveforms
**==> picture [156 x 159] intentionally omitted <==**
**----- Start of picture text -----**
VG
Qg
VGS
Qgs Qgd
Charge
Fig.13 Gate Charge Waveforms
**----- End of picture text -----**
Rev.A
4/4
Appendix
## Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
## About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
## Links
- [View this product on Novapart](https://novapart.co/products/RTQ030P02TR/power-mosfet-p-channel-20-v-3-a-008-ohm-tsmt)
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- [Supplier page](https://es.farnell.com/rohm/rtq030p02tr/mosfet-p-20v-3a/dp/1525555)
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