# Bridge Rectifier, Single Phase, 1 kV, 4 A, TBS, 4 Pins, 1.3 V

![Product image](https://novapart.co/image/farnell:3772994RL/)

**URL**: https://novapart.co/products/RTBS40M/bridge-rectifier-single-phase-1-kv-4-a-tbs-pins-13
**SKU**: RTBS40M
**Manufacturer**: TAIWAN SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Bridge Rectifier Diodes
**Price**: €0.2910
**Stock**: 500+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 4Pins |
| No. Of Phases | Single Phase |
| Product Range | - |
| Forward Voltage Max | 1.3V |
| Forward Surge Current | 110A |
| Average Forward Current | 4A |
| Bridge Rectifier Mounting | Surface Mount |
| Operating Temperature Max | 150°C |
| Bridge Rectifier Case Style | TBS |
| Repetitive Peak Reverse Voltage | 1kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3772994RL/)

## **RTBS40M** j= Taiwan Semiconductor © 

## **4A, 1000V Fast Recovery Glass Passivated Bridge Rectifier** 

## FEATURES 

- Glass passivated junction 

- Ideal for automated placement 

- UL Recognized File # E-326854 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- Switching mode power supply (SMPS) 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|4.0|A|
|VRRM|1000|V|
|IFSM|110|A|
|TJ MAX|150|°C|
|Package|TBS||
|Configuration|Quad||



- Adapters 

- TV 

- Monitor 

## MECHANICAL DATA 

- Case: TBS 

- Molding compound meets UL 94V-0 flammability rating 

- Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 1 whisker test 

- Polarity: As marked 

- Weight: 0.350 g (approximately) 

**==> picture [24 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
TBS<br>**----- End of picture text -----**<br>


|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|
|PARAMETER||SYMBOL|RTBS40M|UNIT|
|Marking code on the device|||RT40M||
|Repetitive peak reverse voltage||VRRM|1000|V|
|Reverse voltage, total rms value||VR(RMS)|700|V|
|Forward current||IF|4|A|
|Surge peak forward current single half<br>sine-wave superimposed on rated load<br>per diode|8.3 ms at TA= 25°C|IFSM|110|A|
||1.0 ms at TA= 25°C||290|A|
|I2t value (of a surge on-state current) at 8.3ms||I2t|50|A2s|
|Junction temperature||TJ|-55 to +150|°C|
|Storage temperature||TSTG|-55 to +150|°C|



1 Version:A2005 

**RTBS40M** 

Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-lead thermal resistance|RӨJL|17|°C/W|
|Junction-to-ambient thermal resistance|RӨJA|58|°C/W|
|Junction-to-case thermal resistance|RӨJC|15|°C/W|



**Thermal Performance Note:** Units mounted on recommended PCB (16mm x 16mm Cu pad test board) 

## ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) 

|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted))|
|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|Forward voltage per diode(1)|IF= 2.0 A, TJ= 25°C|VF|1.01|-|V|
||IF= 4.0 A, TJ= 25°C||1.10|1.30|V|
||IF= 2.0 A, TJ= 125°C||0.85|-|V|
||IF= 4.0 A, TJ= 125°C||0.95|1.17|V|
|Reverse current @ rated VRper diode(2)|TJ= 25°C|IR|-|5|µA|
||TJ= 125°C||-|200|µA|
|Junction capacitanceper diode|1 MHz, VR=4.0V|CJ|32|-|pF|
|Reverse recovery time per diode|IF=0.5A , IR=1.0A<br>IRR=0.25A|trr|-|300|ns|



## **Notes:** 

1. Pulse test with PW=0.3 ms 

2. Pulse test with PW=30 ms 

ORDERING INFORMATION ORDERING CODE PACKAGE PACKING RTBS40M M2G TBS 1,800 / 13" Reel ~~———~~ 

2 Version:A2005 

me. Taiwan Semiconductor **RTBS40M** i © 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**Fig.1 Forward Current Derating Curve** 

**==> picture [206 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>4<br>3<br>2<br>1<br>0<br>0 25 50 75 100 125 150<br>LEAD TEMPERATURE (°C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


## **Fig.3 Typical Reverse Characteristics** 

**==> picture [224 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJ=150°C<br>100<br>10 TJ=125°C<br>1<br>0.1<br>TJ=25°C<br>0.01 ===<br>10 20 30 40 50 60 70 80 90 100<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>INSTANTANEOUS REVERSE CURRENT (μA )<br>**----- End of picture text -----**<br>


## **Fig.2 Typical Junction Capacitance** 

**==> picture [224 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10<br>f=1.0MHz<br>Vsig=50mVp-p<br>1<br>1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


## **Fig.4 Typical Forward Characteristics** 

**==> picture [223 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>TJ=150°C<br>TJ=125°C TJ=25°C<br>1<br>TJ=-55°C<br>Pulse width 300μs<br>1% duty cycle<br>0.1<br>0.4 0.6 0.8 1 1.2 1.4 1.6<br>FORWARD VOLTAGE (V)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version:A2005 

**RTBS40M** 

## Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

## **TBS** 

## SUGGESTED PAD LAYOUT 

## MARKING DIAGRAM 

P/N = Marking Code YW = Date Code F = Factory Code 

4 Version:A2005 

**RTBS40M** 

Taiwan Semiconductor 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

5 Version:A2005 



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- [Supplier page](https://es.farnell.com/taiwan-semiconductor/rtbs40m-m2g/bridge-rectifier-1kv-4a-tbs/dp/3772994RL)
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