# Power MOSFET, N Channel, 45 V, 7 A, 0.018 ohm, SOP, Surface Mount

![Product image](https://novapart.co/image/farnell:2706665/)

**URL**: https://novapart.co/products/RSH070N05GZETB/power-mosfet-n-channel-45-v-7-a-0018-ohm-sop
**SKU**: RSH070N05GZETB
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6020
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.018ohm |
| Transistor Case Style | SOP |
| Drain Source Voltage Vds | 45V |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2706665/)

## 4V Drive Nch MOSFET 

## **RSH070N05** 

##  **Structure** 

Silicon N-channel MOSFET 

##  **Dimensions** (Unit : mm) 

**==> picture [20 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOP8<br>**----- End of picture text -----**<br>


##  **Features** 

1) Built-in G-S Protection Diode. 

2) Small Surface Mount Package (SOP8). 

##  **Application** 

Power switching, DC / DC converter, Inverter 

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**----- Start of picture text -----**<br>
Each lead has same dimensions<br>**----- End of picture text -----**<br>


##  **Packaging specifications** 

|**Packaging specifications**|**Packaging specifications**|
|---|---|
|Package|Taping|
|Code<br>Basic ordering unit (pieces)<br>RSH070N05<br>TB<br>2500<br>Type<br>**Absolute maximum ratings**(Ta=25<br>Sy<br>Parameter<br>~~|~~||



##  **Absolute maximum ratings** (Ta=25C) 

|Basic ordering unit (pieces)<br>RSH070N05<br>2500<br>**Absolute maximum ratings**(Ta=25C)|Basic ordering unit (pieces)<br>RSH070N05<br>2500<br>**Absolute maximum ratings**(Ta=25C)|2500<br>(Ta=25C)C)C)<br>~~|~~|||
|---|---|---|---|---|
|Parameter||Symbol<br>~~|~~|Limits|Unit|
|Drain-source voltage||VDSS|45|V|
|Gate-source voltage||VGSS|20|V|
|Drain current|Continuous|Continuous<br>ID|±7.0|A|
||Pulsed|IDP<br>*1|±28|A|
|Source current<br>(Bodydiode)|Continuous|Continuous<br>IS|1.6|A|
||Pulsed|ISP<br>*1|28|A|
|Totalpower dissipation||PD<br>*2|2|W|
|Chanel temperature||Tch|150|oC|
|Range of Storage temperature||Tstg|-55 to +150|-55 to +150<br>oC|



##  **Inner circuit** 

**==> picture [129 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
(8) (7) (6) (5)<br>(8) (7) (6) (5)<br>∗ 2<br>∗ 1 (1) (2) (3) (4)<br>(1)  Source<br>(2)  Source<br>(3)  Source<br>ae (4)  Gate<br>(1) (2) (3) (4) (5)  Drain<br>(6)  Drain<br>∗ 1 ESD Protection Diode. (7)  Drain<br>∗ 2 Body Diode. (8)  Drain<br>**----- End of picture text -----**<br>


∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. 

*1 PW10ｓ, Duty cycle1 

- *2 Mounted on a ceramic board 

##  **Thermal resistance** 

|**Thermal resistance**||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Chanel to ambient|Rth(ch-a) *|62.5|oC/W|



www.rohm.com 

**2009.12 - Rev.A** 

1/4 

○c 2009 ROHM Co., Ltd. All rights reserved. 

**RSH070N05** 

Data Sheet 

##  **Electrical characteristics** (Ta=25C) 

|Parameter|Symbol|Symbol|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|---|---|
|Gate-source leakage|IGSS|||−|−|10|μA|VGS=20V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||45|−|−|V|ID= 1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||−|−|1|μA|VDS= 45V, VGS=0V|
|Gate threshold voltage|VGS (th)|||1.0|−|2.5|V|VDS= 10V, ID= 1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|18|25|mΩ|ID=7A, VGS= 10V|
|||||−|23|32|mΩ|ID= 7A, VGS= 4.5V|
|||||−|25|35|mΩ|ID= 7A, VGS= 4.0V|
|Forward transfer admittance||Yfs|∗|6.0|−|−|S|VDS= 10V, ID= 7A|
|Input capacitance|Ciss|||−|1000|−|pF|VDS= 10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|||−|230|−|pF||
|Reverse transfer capacitance|Crss|||−|125|−|pF||
|Turn-on delay time|td (on)<br>∗|||−|16|−|ns|VDD25V<br>ID= 3.5A<br>VGS= 10V<br>RL=7.1Ω<br>RG=10Ω|
|Rise time|tr<br>∗|||−|27|−|ns||
|Turn-off delay time|td (off)<br>∗|||−|57|−|ns||
|Fall time|tf<br>∗|||−|21|−|ns||
|Total gate charge|Qg<br>∗|||−|12.0|16.8|nC|VDD  25V<br>VGS= 5V<br>ID= 7A<br>RL=3.6Ω<br>RG=10Ω|
|Gate-source charge|Qgs<br>∗|||−|3.0|−|nC||
|Gate-drain charge|Qgd<br>∗|||−|4.6|−|nC||



∗ Pulsed 

##  **Body diode characteristics** (Source-Drain) (Ta=25C) 

|Symbol|Min.|Typ.|Max.|Unit|Condition|
|---|---|---|---|---|---|
|VSD*|－|－|1.2|V|IS=1.6A/VGS=0V|



* pulsed 

www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 

**2009.12 - Rev.A** 

2/4 

**RSH070N05** 

Data Sheet 

##  **Electrical characteristic curves** 

**==> picture [452 x 549] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 VDS=10V 1000 VGS=10V 1000 VGS=4.5V Ta=125 [o] C<br>pulsed pulsed Ta=125 [o] C pulsed 75 [o] C<br>75 [o] C<br>Ta=125 [o] C 25 [o] C<br>1 75 [o] C 100 -25 25 [o] [o] C C 100 -25 [o] C<br>25 [o] C<br>-25 [o] C<br>0.1 10 10<br>0.01 1<br>1<br>1.0 1.5 2.0 2.5 3.0 3.5 0.01 0.1 1 10 0.01 0.1 1 10<br>Gate-Source Voltage : VGS [V] Drain Current : ID [A] Drain Current : ID [A]<br>Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Fig.3 Static Drain-Source On-State<br>        Resistance vs. Drain Current (1)         Resistance vs. Drain Current (2)<br>1000 pulsedVGS=4V Ta=12575 [o][o] CC 100 Ta=25 [o] C 10 pulsedVGS=0V<br>25 [o] C 80 pulsed<br>100 -25 [o] C 1 Ta=125 [o] C<br>60 75 [o] C<br>25 [o] C<br>40 ID=7.0A -25 [o] C<br>10 0.1<br>20<br>ID=3.5A<br>1 0 0.01<br>0.01 0.1 1 10 0 5 10 15 20 0.0 0.5 1.0 1.5<br>Drain Current : ID [A] Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V]<br>Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source Fig.6 Source-Current  vs.<br>        Resistance vs. Drain Current (3)         On-State Resistance vs.         Source-Drain Voltage<br>        Gate-Source Voltage<br>10000 10000 10<br>Ta=25 [o] C Ta=25 [o] C Ta=25 [o] C<br>f=1MHz VDD=25V 9 V DD =25V<br>V GS =0V V GS =10V 8 I D =7A<br>1000 Ciss 1000 tf RPulsedG=10 7 RPulsedG=10<br>6<br>100 5<br>Coss td(off)<br>4<br>100 t d(on)<br>3<br>10<br>Crss tr 2<br>1<br>10 1 0<br>0.01 0.1 1 10 100 0.01 0.1 1 10 0 5 10 15 20<br>Drain-Source Voltage : VDS [V] Drain Current : ID [A] Total Gate Charge : Qg  [nC]<br>Fig.7 Typical capacitance  vs. Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics<br>        Source-Drain Voltage<br> [A]D ] [m ] [m<br>Drain Current : I DS(on) DS(on)<br> Resistance R Resistance  R<br>Static Drain-Source On-State Static Drain-Source On-State<br>] ]<br> [m  [m<br>DS(on) DS(on)<br>Resistance  R Resistance R Source Current : Is [A]<br>Static Drain-Source On-State Static Drain-Source On-State<br>[V]<br>GS<br>Capacitance : C [pF] Switching Time : t [ns]<br>Gate-Source Voltage : V<br>**----- End of picture text -----**<br>


www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 

**2009.12 - Rev.A** 

3/4 

**RSH070N05** 

Data Sheet 

##  **Measurement circuits** 

**==> picture [114 x 82] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS ID<br>VDS<br>RL<br>D.U.T.<br>RG<br>VDD<br>**----- End of picture text -----**<br>


Fig.10  Switching Time Test Circuit 

**==> picture [143 x 110] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS ID<br>VDS<br>RL<br>IG (Const.)<br>D.U.T.<br>RG<br>VDD<br>Fig.12  Gate Charge Test Circuit<br>**----- End of picture text -----**<br>


**==> picture [127 x 90] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pulse Width<br>90%<br>50% 50%<br>VGS 10%<br>VDS 1 0% 10%<br>90% 90%<br>td(on) tr td(off) tr<br>ton toff<br>**----- End of picture text -----**<br>


Fig.11  Switching Time Waveforms 

**==> picture [113 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
VG<br>Qg<br>VGS<br>Qgs Qgd<br>Charge<br>**----- End of picture text -----**<br>


Fig.13  Gate Charge Waveform 

www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 

**2009.12 - Rev.A** 

4/4 

Notice 

## **N o t e s** 

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 

The content specified herein is subject to change for improvement without notice. 

The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 

Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 

The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). 

The Products specified in this document are not designed to be radiation tolerant. 

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 

Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. 

The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. 

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. 

**==> picture [80 x 61] intentionally omitted <==**

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

## ROHM  Customer Support System 

http://www.rohm.com/contact/ 

www.rohm.com © 2009  ROHM Co., Ltd. All rights reserved. 

R0039A 



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