# Power MOSFET, N Channel, 60 V, 1.5 A, 0.21 ohm, TUMT, Surface Mount

![Product image](https://novapart.co/image/farnell:2769543/)

**URL**: https://novapart.co/products/RSF015N06FRATL/power-mosfet-n-channel-60-v-15-a-021-ohm-tumt
**SKU**: RSF015N06FRATL
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1270
**Stock**: 50+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TUMT |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.5A |
| Drain Source On State Resistance | 0.21ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2769543/)

Datasheet 

**AEC-Q101 Qualified** 

## **FRA** 

**==> picture [117 x 38] intentionally omitted <==**

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TUMT3<br>20 0.85Max.<br>0.2Max.<br>**----- End of picture text -----**<br>


## ~~ee~~ Quantity (pcs) FRA 

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(3)<br>*2<br>*1<br>(1) (2)<br>**----- End of picture text -----**<br>


www.rohm.com © 201 5 ROHM Co., Ltd. All rights reserved. 

2019.05 - Rev.D 

Data Sheet 

**FRA** 

@Body diode characteristics (Source-Drain) (Ta = 25°C) 

www.rohm.com © 201 ROHM Co., Ltd. All rights reserved. 

2019.05 - Rev.D 

Data Sheet 

**���������FRA** 

## � **��������������������������������** (Ta=25�C) 

**==> picture [420 x 586] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.1 Typical Output Characteristics(�) Fig.2 Typical Output Characteristics(�)<br>3 3<br>Ta=25�C Ta=25�C<br>2.5 Pulsed VVGSGS= 10V= 4.5V 2.5 VVVGSGSGS= 10V= 4.5V= 4.0V Pulsed<br>2 VGS= 4.0V 2 VGS= 2.8V<br>1.5 1.5<br>VGS= 2.8V<br>1 1<br>VGS= 2.4V<br>0.5 0.5<br>VGS= 2.4V<br>0 0<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10<br>DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]<br>Fig.3  Typical Transfer Characteristics Fig.4  Static Drain-Source On-StateResistance vs. Drain Current(�)<br>10 10000<br>VDS= 10V Ta= 25�C<br>Pulsed<br>Pulsed<br>VGS= 4.0V<br>1 Ta= 125�C VGS= 4.5V<br>Ta= 75�C VGS= 10V<br>Ta= 25�C 1000<br>Ta= � 25�C<br>0.1<br>�<br>100<br>0.01<br>0.001 10<br>0 1 2 3 0.01 0.1 1 10<br>GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A]<br>Fig.5  Static Drain-Source On-State Fig.6  Static Drain-Source On-State<br>Resistance vs. Drain Current(�) Resistance vs. Drain Current(�)<br>10000 10000<br>VPulsedGS= 10V VPulsedGS= 4.5V Ta= 125�C<br>Ta= 75�C<br>Ta= 125�C Ta= 25�C<br>Ta= 75�C Ta= � 25�C<br>1000 Ta= 25�C 1000<br>Ta= �25�C<br>100 100<br>10 10<br>0.01 0.1 1 10 0.01 0.1 1 10<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>DRAIN CURRENT : I[A]D DRAIN CURRENT : I[A]D<br>[A]D ]�<br>(on)[m<br>DS<br>DRAIN CURRENT : I<br>RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>(on)[m]� (on)[m]�<br>DS DS<br>RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE  STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br>


www.rohm.com © 201�  ROHM Co., Ltd. All rights reserved. 

2019.05 - Rev.D 

3/6 

Data Sheet 

**���������FRA** 

**==> picture [425 x 594] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.7  Static Drain-Source On-State Fig.8 Forward Transfer Admittance<br>Resistance vs. Drain Current(�) vs. Drain Current<br>10000 10<br>VPulsedGS= 4.0V Ta= 125�C VPulsedDS= 10V<br>Ta= 75�C<br>Ta= 25�C<br>Ta= �25�C<br>1000<br>1<br>Ta= �25�C<br>100 Ta=25�C<br>Ta=75�C<br>Ta=125�C<br>10 0.1<br>0.01 0.1 1 10 0.01 0.1 1 10<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>Fig.9 Source Current Fig.10  Static Drain-Source On-State<br>vs. Sourse-Drain Voltage  Resistance vs. Gate Source Voltage<br>10 600<br>VPulsedGS=0V ID= 1.5A Ta=25Pulsed�C<br>500<br>1 400 ID= 0.7A<br>300<br>Ta= 125�C<br>0.1 Ta= 75�C 200<br>Ta= 25�C<br>Ta= �25�C<br>100<br>0.01 0<br>0 0.5 1 1.5 0 5 10 15 20<br>SOURCE-DRAIN VOLTAGE : VSD [V] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics<br>1000 10<br>Ta=25�C Ta=25�C<br>td(off) tf VRPulsedVDDGSG=10�= 30V=10V 8 IRPulsedVDDDG= 1.5A=10�= 30V<br>100<br>6<br>4<br>10<br>2<br>td(on) tr<br>1 0<br>0.01 0.1 1 10 0 1 2 3 4<br>DRAIN-CURRENT : ID[A] TOTAL GATE CHARGE : Qg  [nC]<br>]�<br>(on)[m<br>DS<br>RESISTANCE : R FORWARD TRANSFER ADMITTANCE : |Yfs| [S]<br>STATIC DRAIN-SOURCE ON-STATE<br>]�<br>(ON)[m<br>DS<br>SOURCE CURRENT : Is [A] RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br> [V]<br>GS<br>SWITCHING TIME : t [ns] GATE-SOURCE VOLTAGE : V<br>**----- End of picture text -----**<br>


www.rohm.com © 201�  ROHM Co., Ltd. All rights reserved. 

2019.05 - Rev.D 

4/6 

Data Sheet 

**���������FRA** 

**==> picture [509 x 677] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.13  Typical Capacitance<br>vs. Drain-Source Voltage<br>1000<br>Ciss<br>100<br>10 Crss<br>Coss<br>Ta=25�C<br>f=1MHz<br>VGS=0V<br>1<br>0.01 0.1 1 10 100<br>DRAIN-SOURCE VOLTAGE : VDS[V]<br>CAPACITANCE : C [pF]<br>**----- End of picture text -----**<br>


www.rohm.com © 201�  ROHM Co., Ltd. All rights reserved. 

2019.05 - Rev.D 

5/6 

Data Sheet 

## **���������FRA** 

## � **��������������������** 

**==> picture [105 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS ID<br>VDS<br>RL<br>D.U.T.<br>RG VDD<br>**----- End of picture text -----**<br>


Fig.1-1  Switching Time Measurement Circuit 

**==> picture [128 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS ID<br>VDS<br>RL<br>IG(Const.) D.U.T.<br>VDD<br>**----- End of picture text -----**<br>


Fig.2-1  Gate Charge Measurement Circuit 

**==> picture [120 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pulse width<br>50% 90% 50%<br>VGS 10%<br>VDS<br>10% 10%<br>90% 90%<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


Fig.1-2  Switching Waveforms 

**==> picture [105 x 88] intentionally omitted <==**

**----- Start of picture text -----**<br>
VG<br>Qg<br>VGS<br>Qgs Qgd<br>Charge<br>**----- End of picture text -----**<br>


Fig.2-2  Gate Charge Waveform 

www.rohm.com © 201�  ROHM Co., Ltd. All rights reserved. 

2019.05 - Rev.D 

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