# Power MOSFET, N Channel, 100 V, 17.5 A, 0.105 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2706659/)

**URL**: https://novapart.co/products/RSD175N10TL/power-mosfet-n-channel-100-v-175-a-0105-ohm-to-252
**SKU**: RSD175N10TL
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2840
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 20W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 17.5A |
| Drain Source On State Resistance | 0.105ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2706659/)

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**----- Start of picture text -----**<br>
Data Sheet<br>7<br>4V Drive Nch MOSFET<br>   RSD175N10<br> Structure  Dimensions  (Unit : mm)<br>Silicon N-channel MOSFET CPT3<br>6.5<br>(SC-63)<SOT-428> 5.1 2.3<br>eS 0.5<br> Features<br>1) Low on-resistance.<br>4) 4V drive. 0.75<br>4) High power package. 0.65<br>0.9 2.3<br>A (1) (2) (3) l 2.3 0.5<br>1.0<br> Application<br>Switching<br> Packaging specifications  Inner circuit<br>Package Taping ∗ 1<br>Type Code TL<br>Basic ordering unit (pieces) 2500 ∗ 2<br>RSD175N10 <br>(1)  Gate (1) (2) (3)<br>(2)  Drain ∗1 ESD PROTECTION DIODE<br>(3)  Source ∗2 BODY DIODE<br> Absolute maximum ratings  (Ta = 25C)<br>Parameter a Symbol Limits Unit<br>Drain-source voltage VDSS 100 V<br>Gate-source voltage —— VGSS 20 V<br>Drain current Continuous ID *3 17.5 A<br>— Pulsed IDP *1 35 A<br>Source current Continuous IS *3 17.5 A<br>(Body Diode) —— Pulsed ISP *1 35 A<br>Power dissipation a PD *2 20 W<br>Channel temperature Tch 150 C<br>Range of storage temperature —— Tstg 55 to 150 C<br>*1 PW10s, Duty cycle1%<br>*2 TC=25°C<br>*3 Please use within the range of SOA.<br>New Designs<br>Not Recommended for<br>1.5<br>5.5<br>9.5<br>1.5<br>0.9<br>5<br>2.<br>0.8Min.<br>**----- End of picture text -----**<br>


 **Thermal resistance** Parameter Symbol Limits Unit ~~tH~~ Channel to Case Rth (ch-c)* 6.25 C / W 

* TC=25°C 

www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.06 -  Rev.A** 

1/6 

Data Sheet 

**RSD175N10** 

##  **Electrical characteristics** (Ta = 25C) 

|**Electrical characteristics**(Ta = 25C)||||||
|---|---|---|---|---|---|
|Symbol<br>Min.<br>Parameter|Typ.|Max.|Unit|Conditions||
|Gate-source leakage<br>IGSS<br>-|-|10|A|VGS=20V, VDS=0V||
|Drain-source breakdown voltage<br>V(BR)DSS<br>100|-|-|V|ID=1mA, VGS=0V||
|Zerogate voltage drain current<br>IDSS<br>-|-|1|A|VDS=100V, VGS=0V||
|Gate threshold voltage<br>VGS(th)<br>1|-|2.5|V|VDS=10V, ID=1mA||
|-<br>75<br>105<br>ID=8.8A, VGS=10V<br>-<br>80<br>112<br>ID=8.8A, VGS=4.5V<br>-<br>85<br>119<br>ID=8.8A, VGS=4V<br>Forward transfer admittance<br>l Yfsl<br>5<br>-<br>-<br>S<br>VDS=10V, ID=8.8A<br>Input capacitance<br>Ciss<br>-<br>950<br>-<br>pF<br>VDS=25V<br>Output capacitance<br>Coss<br>-<br>85<br>-<br>pF<br>VGS=0V<br>Reverse transfer capacitance<br>Crss<br>-<br>55<br>-<br>pF<br>f=1MHz<br>Turn-on delaytime<br>td(on)<br>-<br>10<br>-<br>ns<br>VDD 50V, ID=8.8A<br>Rise time<br>tr<br>-<br>25<br>-<br>ns<br>VGS=10V<br>Turn-off delaytime<br>td(off)<br>-<br>60<br>-<br>ns<br>RL=5.7<br>Fall time<br>tf<br>-<br>50<br>-<br>ns<br>RG=10<br>Totalgate charge<br>Qg<br>-<br>24<br>-<br>nC<br>VDD 50V, ID=17.5A<br>Gate-source charge<br>Qgs<br>-<br>3<br>-<br>nC<br>VGS=10V<br>Gate-drain charge<br>Qgd<br>-<br>6<br>-<br>nC<br>*Pulsed<br>**Body diode characteristics**(Source-Drain)<br>Symbol<br>Min.<br>Typ.<br>Max.<br>Unit<br>Forward Voltage<br>VSD<br>-<br>-<br>1.5<br>V<br>Is=17.5A, VGS=0V<br>*Pulsed<br>Conditions<br>m<br>Parameter<br>Static drain-source on-state<br>resistance<br>RDS (on)<br>*<br>*<br>*****<br>*****<br>*****<br>*****<br>*****<br>*****<br>*****<br>*****<br>Not Recommended for<br>New Designs||||||
|www.rohm.com||||||
|© 2011  ROHM Co., Ltd. All rights reserved.|2/6||||**2011.06 -  Rev.A**|



**2011.06 -  Rev.A** 

2/6 

Data Sheet 

**RSD175N10** 

##  **Electrical characteristic curves** (Ta=25C) 

**==> picture [109 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.2 Typical Output Characteristics ( Ⅱ )<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig.1 Typical Output Characteristics ( Ⅰ )  Fig.2 Typical Output Characteristics ( Ⅱ )<br>10 17.5<br>VGS=10.0V<br>VGS=4.5V  15 VGS=10.0V<br>8 VGS=4.0V  VGS=4.5V<br>12.5 VGS=4.0V<br>6 VGS=3.0V<br>VGS=3.0V  10 VGS=2.8V<br>VGS=2.8V  VGS=2.5V  VGS=2.5V<br>7.5<br>4<br>5<br>2<br>Ta=25°C  2.5 Ta=25°C<br>pulsed  pulsed<br>0 0<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10<br>Drain-Source Voltage : VDS [V]  Drain-Source Voltage : VDS [V]<br>Fig.3 Static Drain-Source On-State Resistance vs. Drain Current  Fig.4 Static Drain-Source On-State Resistance vs. Drain Current<br>1000 1000<br>Ta=25°C  VGS=10V<br>pulsed  pulsed  Ta=125°C<br>Ta=75°C<br>Ta=25°C<br>VVGSGS=4.0V =4.5V  Ta=-25°C<br>VGS=10V<br>100 100<br>10 10<br>0.01 0.1 1 10 100 0.01 0.1 1 10 100<br>Drain Current : ID [A]  Drain Current :  ID [A]<br>Fig.5 Static Drain-Source On-State Resistance vs. Drain Current  Fig.6 Static Drain-Source On-State Resistance vs. Drain Current<br>1000 1000<br>VGS=4.5V  VGS=4V<br>pulsed  Ta=125°C  pulsed  Ta=125°C<br>Ta=75°C  Ta=75°C<br>Ta=25°C  Ta=25°C<br>Ta=-25°C  Ta=-25°C<br>100 100<br>10 10<br>0.01 0.1 1 10 100 0.01 0.1 1 10 100<br>Drain Current :  ID [A]  Drain Current :  ID [A]<br>New Designs<br>Not Recommended for<br>Drain Current : I [A] D Drain Current : I [A] D<br> [mΩ]   [mΩ]<br>DS(on) DS(on)<br>R R<br>Static Drain-Source On-State Resistance  Static Drain-Source On-State Resistance<br> [mΩ]<br> [mΩ]<br>DS(on)<br>R DS(on)<br>R<br>Static Drain-Source On-State Resistance<br>Static Drain-Source On-State Resistance<br>**----- End of picture text -----**<br>


www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.06 -  Rev.A** 

3/6 

Data Sheet 

**RSD175N10** 

Fig.7 Forward Transfer Admittance vs. Drain Current 

Fig.8 Typical Transfer Characteristics 

**==> picture [513 x 575] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>VDS=10V  VDS=10V<br>pulsed  pulsed<br>10<br>10<br>Ta=125°C<br>1 TTTaaa=125=75=25°°C C °C  1 TTTa=aa=75=25-25°°°C C C<br>Ta=-25°C  0.1<br>0.1<br>0.01<br>0.01 0.001<br>0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>Drain Current :  ID [A]  Gate-Source Voltage :   VGS [V]<br>Fig.9 Source Current vs. Source-Drain Voltage  Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source<br>Voltage<br>100 250<br>VGS=0V  Ta=25°C<br>pulsed  pulsed  ID=17.5A<br>200<br>10 Ta=125°C  ID=8.8A<br>Ta=75°C<br>TTaa=25=-25°C °C  150<br>1<br>100<br>0.1<br>50<br>0.01 0<br>0.0 0.5 1.0 1.5 2.0 0 2 4 6 8 10<br>Source-Drain Voltage :  VSD [V]  Gate-Source Voltage : VGS [V]<br>Fig.11 Switching Characteristics  Fig.12 Dynamic Input Characteristics<br>10000 10<br>VDD ≒ 50V  Ta=25°C<br>VGS=10V  VDD=50V<br>1000 RTaG=25=10Ω °C  8 IPulsed D=17.5A<br>tf Pulsed<br>6<br>td(off)<br>100<br>4<br>tr<br>10<br>2<br>td(on)<br>1 0<br>0.01 0.1 1 10 100 0 5 10 15 20 25<br>Drain Current : ID [A]  Total Gate Charge : Qg  [nC]<br>New Designs<br>Not Recommended for<br> [A] D<br> [S]<br>fs<br>Y<br>Drain Currnt :  I<br>Forward Transfer Admittance<br> [mΩ]<br>DS(on)<br>R<br>Source Current :  Is [A]<br>Static Drain-Source On-State Resistance<br> [V]<br>Switching Time : t [ns]  GS<br>Gate-Source Voltage : V<br>**----- End of picture text -----**<br>


www.rohm.com 

© 2011  ROHM Co., Ltd. All rights reserved. 

**2011.06 -  Rev.A** 

4/6 

Data Sheet 

**RSD175N10** 

**==> picture [144 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.13 Typical Capacitance vs. Drain-Source Voltage<br>**----- End of picture text -----**<br>


**==> picture [513 x 566] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.14 Normalized  Transient  Thermal  Resistance v.s. Pulse Width<br>10000 10<br>Ta=25°C  Ta=25°C<br>f=1MHz  Single Pulse<br>VGS=0V  1<br>Ciss<br>1000<br>0.1<br>0.01<br>100<br>Coss<br>Mounted on a recommended land.<br>0.001 (20mm × 20mm × 0.8mm)<br>Crss  RthRth(ch-a)(ch-a)=103.5(t)=r(t)×°C/W Rth(ch-a)<br>10 0.0001<br>0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000<br>Drain-Source Voltage : VDS [V]  Pulse width : Pw (s)<br>Fig.15 Maximum Safe Operating Area<br>100 Operation in this area is limited<br>by RDS(on) (VGS = 10V)<br>10<br>PW = 100μs<br>1<br>PW = 1ms<br>PW = 10ms<br>0.1 DC Operation<br>Tc=25°C<br>Single Pulse<br>0.01<br>0.1 1 10 100 1000<br>Drain-Source Voltage : VDS [ V ]<br>New Designs<br>Not Recommended for<br>）（tr<br>Capacitance : C [pF]<br>Normalized  Transient  Thermal  Resistance  :<br>[ A ]<br>Current  :  ID<br>Drain<br>**----- End of picture text -----**<br>


www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.06 -  Rev.A** 

5/6 

Data Sheet 

**RSD175N10** 

##  **Measurement circuits** 

**==> picture [527 x 736] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pulse width<br>VGS ID<br>VDS 50% 90% 50%<br>RL VGS 10%<br>VDS<br>D.U.T. 10% 10%<br>RG VDD 90% 90%<br>td(on) tr td(off) tf<br>ton toff<br>Fig.1-1  Switching Time Measurement Circuit Fig.1-2 Switching Waveforms<br>VG<br>VGS ID<br>VDS<br>Qg<br>RL<br>VGS<br>IG(Const.) D.U.T.<br>Qgs Qgd<br>VDD<br>Charge<br>Fig.2-1  Gate Charge Measurement Circuit Fig.2-2  Gate Charge Waveform<br>www.rohm.com<br>© 2011  ROHM Co., Ltd. All rights reserved. 6/6  2011.06 -  Rev.A<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


**2011.06 -  Rev.A** 

6/6 

Notice 

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www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

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