# Power MOSFET, N Channel, 30 V, 30 A, 4500 µohm, HSMT, Surface Mount ![Product image](https://novapart.co/image/farnell:4203034RL/) **URL**: https://novapart.co/products/RQ3E180AJTB1/power-mosfet-n-channel-30-v-a-4500-ohm-hsmt **SKU**: RQ3E180AJTB1 **Manufacturer**: ROHM **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2970 **Stock**: 10+ **Lead Time**: 155 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | To Be Advised | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 2W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 4.5V | | Transistor Case Style | HSMT | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 30A | | Drain Source On State Resistance | 4500µohm | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:4203034RL/) Datasheet Nch 30V 18A Middle Power MOSFET ## RQ3E180AJ ## **l Outline** VDSS 30V RDS(on)(Max.) 4.5mΩ ID ±30A PD 2W ~~——~~ HSMT8 ## **l Inner circuit** ## **l Features** 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant ## **l Packaging specifications** ## **l Application** ## Switching |Type|Packing|Embossed
Tape| |---|---|---| ||Reel size(mm)|330| ||Tape width(mm)|12| ||Basic orderingunit(pcs)|3000| ||Tapingcode|TB| ||Marking|E180AJ| ## **l Absolute maximum ratings** (Ta = 25°C) |**lAbsolute maximum ratings**(Taa = 25°C)|**lAbsolute maximum ratings**(Taa = 25°C)|||| |---|---|---|---|---| |Parameter||Symbol|Value|Unit| |Drain - Source voltage||VDSS|30|V| |Continuous drain current|Tc= 25°C|ID*4|±30|A| ||Ta= 25°C|ID|±18|A| |Pulsed drain current||ID,pulse*1|±72|A| |Gate - Source voltage||VGSS|±12|V| |Avalanche energy, singlepulse||EAS*2|24.6|mJ| |Avalanche current||IAS*2|18|A| |Power dissipation||PD*3|2|W| |||PD*4|30|W| |Junction temperature||Tj|150|℃| |Range of storage temperature||Tstg|-55 to +150|℃| www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 1/11 **RQ3E180AJ** Datasheet ## **l Thermal resistance** |**lThermal resistance**|||||| |---|---|---|---|---|---| ||||Values||| |Parameter|Symbol|Min.|Typ.|Max.|Unit| |Thermal resistance, junction - ambient|RthJA*3|-|62.5|-|℃/W| |Thermal resistance, junction - case|RthJC*4|-|4.17|-|℃/W| ## **l Electrical characteristics (Ta = 25°C)** |Parameter|Symbol|Conditions|Values|Values|Values|Unit| |---|---|---|---|---|---|---| ||||Min.|Typ.|Max.|| |Drain - Source breakdown
voltage|V(BR)DSS|VGS= 0V, ID= 1mA|30|-|-|V| |Breakdown voltage
temperature coefficient|ΔV(BR)DSS
ΔTj|ID= 1mA
referenced to 25℃|-|18|-|mV/℃| |Zero gate voltage
drain current|IDSS|VDS= 24V, VGS= 0V|-|-|1|μA| |Gate - Source leakage current|IGSS|VGS= ±12V, VDS= 0V|-|-|±100|nA| |Gate threshold voltage|VGS(th)|VDS= VGS, ID= 11mA|0.5|-|1.5|V| |Gate threshold voltage
temperature coefficient|ΔVGS(th)
ΔTj|ID= 1mA
referenced to 25℃|-|-2.0|-|mV/℃| |Static drain - source
on - state resistance|RDS(on)*5|VGS= 4.5V, ID= 18A|-|3.5|4.5|mΩ| |||
VGS= 2.5V, ID= 18A|-|4.5|5.8|| |Forward Transfer
Admittance||Yfs|*5|VDS= 5V, ID= 18A|24|-|-|S| *1 Pw ≤ 10μs, Duty cycle ≤ 1% *2 L ⋍ 100uH, VDD = 15V, RG = 25Ω, STARTING Tch = 25℃ Fig.3-1,3-2 - *3 Mounted on a ceramic boad (30×30×0.8mm) *4 Tc=25℃ *5 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 2/11 **RQ3E180AJ** Datasheet ## **l Electrical characteristics** (Ta = 25°C) |Parameter|Symbol|Conditions|Values|Values|Values|Unit| |---|---|---|---|---|---|---| ||||Min.|Typ.|Max.|| |Input capacitance|Ciss|VGS= 0V
VDS= 15V
f = 1MHz|-|4290|-|pF| |Output capacitance|Coss||-|490|-|| |Reverse transfer capacitance|Crss||-|320|-|| |Turn - on delay time|td(on)*5|VDD ⋍15V,VGS= 4.5V
ID= 9A
RL ⋍1.67Ω
RG= 10Ω|-|28|-|ns| |Rise time|tr*5||-|22|-|| |Turn - off delay time|td(off)*5||-|150|-|| |Fall time|tf*5||-|160|-|| ## **l Gate charge characteristics** (Ta = 25°C) |Parameter|Symbol|Conditions|Values|Values|Values|Unit| |---|---|---|---|---|---|---| ||||Min.|Typ.|Max.|| |Total gate charge|Qg*5|VDD ⋍15V,
ID= 18A,
VGS= 4.5V|-|39|-|nC| |Gate - Source charge|Qgs*5||-|10|-|| |Gate - Drain charge|Qgd*5||-|10|-|| ## **l Body diode electrical characteristics** (Source-Drain) (Ta = 25°C) |Parameter|Symbol|Conditions|Values|Values|Values|Unit| |---|---|---|---|---|---|---| ||||Min.|Typ.|Max.|| |Body diode continuous
forward current|IS*1|Ta= 25℃|-|-|1.67|A| |Body diode
pulse current|ISP*2||-|-|72|A| |Forward voltage|VSD*5|VGS= 0V, IS= 1.67A|-|-|1.2|V| www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 3/11 **RQ3E180AJ** Datasheet ## **l Electrical characteristic curves** Fig.1 Power Dissipation Derating Curve Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width ## Fig.2 Maximum Safe Operating Area Fig.4 Single Pulse Maximum Power dissipation www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 4/11 **RQ3E180AJ** Datasheet ## **l Electrical characteristic curves** Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 5/11 **RQ3E180AJ** Datasheet ## **l Electrical characteristic curves** Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 6/11 **RQ3E180AJ** Datasheet ## **l Electrical characteristic curves** Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 7/11 **RQ3E180AJ** Datasheet ## **l Electrical characteristic curves** Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 8/11 **RQ3E180AJ** Datasheet ## **l Electrical characteristic curves** Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.19 Dynamic Input Characteristics Fig.18 Switching Characteristics Fig.20 Source Current vs. Source Drain Voltage www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 9/11 **RQ3E180AJ** Datasheet ## **l Measurement circuits** Fig.1-1 Switching Time Measurement Circuit ## Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 AVALANCHE MEASUREMENT CIRCUIT Fig.3-2 AVALANCHE WAVEFORM ## **l Notice** This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 10/11 **RQ3E180AJ** Datasheet ## **l Dimensions** www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. **20150730 - Rev.002** 11/11 Notice **==> picture [309 x 464] intentionally omitted <==** **----- Start of picture text -----**
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions:
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified
by ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including ROHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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