# Power MOSFET, P Channel, 12 V, 7 A, 0.014 ohm, TSMT, Surface Mount

![Product image](https://novapart.co/image/farnell:4203020RL/)

**URL**: https://novapart.co/products/RQ1A070APTR/power-mosfet-p-channel-12-v-7-a-0014-ohm-tsmt
**SKU**: RQ1A070APTR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2510
**Stock**: 10+
**Lead Time**: 176 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TSMT |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 0.014ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4203020RL/)

**Pch  -12V  -7A  Power MOSFET** 

Datasheet 

## RQ1A070AP 

## l **Outline** 

|VDSS|-12V|
|---|---|
|RDS(on) (Max.)|14mW|
|ID|-7A|
|PD|1.5W|



## l **Features** 

1) Low on - resistance. 

- 2) Built-in G-S Protection Diode. 

3) Small Surface Mount Package (TSMT8). 

4) Pb-free lead plating ; RoHS compliant 

|**TSMT8**|**TSMT8**|**TSMT8**|**TSMT8**|**TSMT8**||||||||||||(8)<br>(7)<br>(6)<br>(5)||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||(1)<br>(2) (3)<br>(4)|||(4)||
|l**Inner circuit**|**Inner circuit**|**Inner circuit**|**Inner circuit**|**Inner circuit**|**Inner circuit**|||||||||||||
||®||||@||||||©|||©)||||
|||||||||||||||||(1) Source|(5) Drain|
|||||||||||||||||(2) Source<br>(3) Source|(6) Drain<br>(7) Drain|
|||||||||||||||||(4) Gate|(8) Drain|



## l **Inner circuit** 

- *1 ESD PROTECTION DIODE *2 BODY DIODE 

## l **Packaging specifications** 

## l **Application** 

Road SW 

|Type|Packaging|Taping|
|---|---|---|
||Reel size (mm)|180|
||Tape width (mm)|8|
||Basic ordering unit (pcs)|3,000|
||Taping code|TR|
||Marking|SG|



## l **Absolute maximum ratings** (Ta = 25°C) 

|Parameter|Symbol|Value|Unit|
|---|---|---|---|
|Drain - Source voltage|VDSS|-12|V|
|Continuous drain current|ID<br>*1|7|A|
|Pulsed drain current|ID,pulse<br>*2|28|A|
|Gate - Source voltage|VGSS|0 to-8|V|
|Power dissipation|PD<br>*3|1.5|W|
||PD<br>*4|0.55|W|
|Junction temperature|Tj|150|°C|
|Range of storage temperature|Tstg|-55 to+150|°C|



www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

1/11 

Data Sheet 

**RQ1A070AP** 

## l **Thermal resistance** 

|l**Thermal resistance**||||||
|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|
|||Min.|Typ.|Max.||
|Thermal resistance, junction - ambient|RthJA<br>*3|-|-|83.3|°C/W|
|Thermal resistance, junction - ambient|RthJA<br>*4|-|-|227|°C/W|



## l **Electrical characteristics** (Ta = 25°C) 

|l**Electrical characteristics**(Ta|= 25°C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Drain - Source breakdown<br>voltage|V(BR)DSS|VGS= 0V, ID=-1mA|-12|-|-|V|
|Breakdown voltage<br>temperature coefficient|ΔV(BR)DSS<br>ΔTj|ID=-1mA<br>referenced to 25°C|-|12|-|mV/C|
|Zero gate voltage drain current|IDSS|VDS=-12V, VGS= 0V|-|-|-10|mA|
|Gate - Source leakage current|IGSS|VGS=-8V, VDS= 0V|-|-|-10|mA|
|Gate threshold voltage|VGS (th)|VDS=-6V, ID=-1mA|-0.3|-|-1|V|
|Gate threshold voltage<br>temperature coefficient|ΔV(GS)th<br>ΔTj|ID=-1mA<br>referenced to 25°C|-|2.6|-|mV/°C|
|Static drain - source<br>on - state resistance|RDS(on)<br>*5|VGS=-4.5V, ID=-7.0A|-|10|14|mW|
|||VGS=-2.5V, ID=-3.5A|-|13|19||
|||VGS=-1.8V, ID=-3.5A|-|18|27||
|||VGS=-1.5V, ID=-1.4A|-|24|48||
|||VGS=-10V, ID=-7A, Tj=125°C|-|22|31||
|Gate input resistannce|RG|f = 1MHz, open drain|-|8.0|-|W|
|Transconductance|gfs *5|VDS= 10V, ID=-7.0A|11|22|-|S|



- *1 Limited only by maximum temperature allowed. 

- *2 Pw  10ms, Duty cycle  1% 

- *3 Mounted on a ceramic board (30×30×0.8mm) 

- *4 Mounted on a FR4 (20×20×0.8mm) 

www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

2/11 

Data Sheet 

**RQ1A070AP** 

## l **Electrical characteristics** (Ta = 25°C) 

|l**Electrical characteristics**(Ta|= 25°C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Input capacitance|Ciss|VDS=-6V<br>f = 1MHz<br>VGS= 0V|-|7800|-|pF|
|Output capacitance|Coss||-|900|-||
|Reverse transfer capacitance|Crss||-|850|-||
|Turn - on delay time|td(on)<br>*5|VDD⋍ -6V, VGS=-4.5V<br>ID=-3.5A<br>RL= 1.7W<br>RG= 10W|-|25|-|ns|
|Rise time|tr<br>*5||-|135|-||
|Turn - off delay time|td(off)<br>*5||-|550|-||
|Fall time|tf<br>*5||-|260|-||



## l **Gate Charge characteristics** (Ta = 25°C) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Total gate charge|Qg<br>*5|VDD⋍ -6V, ID=-7A<br>VGS=-4.5V|-|80|-|nC|
|Gate - Source charge|Qgs<br>*5|VDD⋍ -6V, ID=-7A<br>VGS=-4.5V|-|12|-||
|Gate - Drain charge|Qgd<br>*5||-|13|-||



## l **Body diode electrical characteristics** (Source-Drain)(Ta = 25°C) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Inverse diode continuous,<br>forward current|IS *1|Ta= 25C|-|-|-1|A|
|Forward voltage|VSD<br>*5|VGS= 0V, Is=-7A|-|-|-1.2|V|



## *5 Pulsed 

www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

3/11 

Data Sheet 

**RQ1A070AP** 

## l **Electrical characteristic curves** 

Fig.1 Power Dissipation Derating Curve 

## Fig.2 Maximum Safe Operating Area 

**==> picture [485 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
120 100<br>100<br>PW = 100μs<br>10<br>80 PW = 1ms<br>60 1 Operation in  PW = 10ms<br>this area<br>is limited by<br>40 ( VGSR = DS(on) -4.5V )  DC Operation<br>0.1 Ta=25ºC<br>20 Single Pulse<br>Mounted on a ceramic board.<br>(30mm × 30mm × 0.8mm)<br>0 0.01<br>0 50 100 150 200 0.1 1 10 100<br>Junction Temperature : Tj [°C]  Drain - Source Voltage : -VDS [V]<br> max. [%]<br>D  [A]<br>/P D<br>D Drain Current : -I<br>Power Dissipation  : P<br>**----- End of picture text -----**<br>


Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 

## Fig.4 Single Pulse Maximum Power dissipation 

**==> picture [475 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 1000<br>TSingle Pulse a=25ºC  TSingle Pulse a=25ºC<br>1 100<br>top        D=1<br>             D=0.5<br>0.1              D=0.1  10<br>             D=0.05<br>             D=0.01<br>bottom  Signle<br>0.01 1<br>Rth(ch-a)=83ºC/W<br>Rth(ch-a)(t)=r(t)×Rth(ch-a)<br>Mounted on ceramic board.<br>(30mm × 30mm × 0.8mm)<br>0.001 0.1<br>0.0001 0.01 1 100 0.0001 0.01 1 100<br>Pulse Width : PW [s]  Pulse Width : PW [s]<br>(t)<br>Peak Transient Power :  P(W)<br>Normalized Transient Thermal Resistance : r<br>**----- End of picture text -----**<br>


www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

4/11 

Data Sheet 

**RQ1A070AP** 

## l **Electrical characteristic curves** 

## Fig.5 Typical Output Characteristics(I) 

## Fig.6 Typical Output Characteristics(II) 

**==> picture [485 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
7 7<br>6 6 VGS= -V4.5V GS= -1.2V   T Pulsed  a= 25ºC<br>VGS= -1.2V  VGS= -2.5V<br>5 5 VGS= -1.8V<br>4 VVGSGS= = --4.5V 2.5V   T Pulsed  a= 25ºC  4 VGS= -1.5V<br>VGS= -1.8V<br>3 VGS= -1.5V  3<br>2 2<br>VGS= -1.0V<br>1 VGS= -1.0V  1<br>0 0<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10<br>Drain - Source Voltage : -VDS [V]  Drain - Source Voltage : -VDS [V]<br> [A]<br> [A]  D<br>D Drain Current : -I<br>Drain Current : -I<br>**----- End of picture text -----**<br>


www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

5/11 

Data Sheet 

**RQ1A070AP** 

## l **Electrical characteristic curves** 

Fig.7 Breakdown Voltage vs. Junction Temperature 

**==> picture [222 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>VGS=0V<br>ID= -1mA<br>pulsed<br>20<br>10<br>0<br>-50 0 50 100 150<br>Junction Temperature : Tj [°C]<br> [V]<br>(BR)DSS<br>Drain - Source Breakdown Voltage : -V<br>**----- End of picture text -----**<br>


Fig.9 Gate Threshold Voltage vs. Junction Temperature 

**==> picture [223 x 226] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.8<br>0.6<br>0.4<br>0.2 VDS= -6V<br>ID= -1mA<br>pulsed<br>0<br>-50 0 50 100 150<br>Junction Temperature : Tj [°C]<br> [V]<br>GS(th)<br>Gate Threshold Voltage : -V<br>**----- End of picture text -----**<br>


Fig.8 Typical Transfer Characteristics 

**==> picture [225 x 224] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>VDS= -6V<br>pulsed<br>1<br>0.1 Ta = 125ºC<br>Ta = 75ºC<br>Ta = 25ºC<br>Ta = -25ºC<br>0.01<br>0.001<br>0.0 0.5 1.0 1.5 2.0<br>Gate - Source Voltage : -VGS [V]<br> [A]<br>D<br>Drain Current : -I<br>**----- End of picture text -----**<br>


Fig.10 Transconductance vs. Drain Current 

**==> picture [219 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VDS= -6V<br>pulsed<br>10<br>1<br>Ta = 125ºC<br>Ta = 75ºC<br>Ta = 25ºC<br>Ta =  --25ºC 25ºC<br>0.1<br>0.01<br>0.01 0.1 1 10<br>Drain Current : -ID [A]<br> [S]<br>fs<br>Transconductance : g<br>**----- End of picture text -----**<br>


www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

6/11 

Data Sheet 

**RQ1A070AP** 

## l **Electrical characteristic curves** 

Fig.11 Drain CurrentDerating Curve 

**==> picture [239 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>-25 0 25 50 75 100 125 150<br>Junction Temperature : Tj [ºC]<br> max.(%)<br>D<br> / I<br>D<br>Drain Current Dissipation : I<br>**----- End of picture text -----**<br>


Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) 

**==> picture [240 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br> T Pulsed  a= 25ºC  VVGSGS= = --1.5V 1.8V<br>VGS= -2.5V<br>VGS= -4.5V<br>10<br>1<br>0.01 0.1 1 10 100<br>Drain Current : -ID [A]<br> [mΩ]<br>DS(on)<br>: R<br>Static Drain - Source On-State Resistance<br>**----- End of picture text -----**<br>


Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 

**==> picture [230 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br> Ta= 25ºC<br> Pulsed<br>40<br>ID= -1.4A<br>ID= -7.0A<br>30<br>20<br>10<br>0<br>0 2 4 6 8<br> [mΩ]<br>DS(on)<br>: R<br>Static Drain - Source On-State Resistance<br>**----- End of picture text -----**<br>


Gate - Source Voltage : -VGS [V] 

Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature 

**==> picture [228 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
25<br>20<br>15<br>10<br>5 VGS= -4.5V<br>ID= -7A<br>pulsed<br>0<br>-50 -25 0 25 50 75 100 125 150<br>Junction Temperature : Tj [ºC]<br> [mΩ]<br>DS(on)<br>: R<br>Static Drain - Source On-State Resistance<br>**----- End of picture text -----**<br>


www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

7/11 

Data Sheet 

**RQ1A070AP** 

## l **Electrical characteristic curves** 

Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) 

Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 

**==> picture [485 x 592] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>VGS = -4.5V  VGS = -2.5V<br>Pulsed Pulsed<br>10<br>Ta = 125ºC  10<br>Ta = 75ºC<br>Ta = 25ºC<br>1 Ta = -25ºC  Ta = 125ºC<br>Ta = 75ºC<br>Ta = 25ºC<br>Ta = -25ºC<br>0.1 1<br>0.01 0.1 1 10 0.01 0.1 1 10<br>Drain Current : -ID [A]  Drain Current : -ID [A]<br>Fig.17 Static Drain - Source On - State  Fig.18 Static Drain - Source On - State<br>            Resistance vs. Drain Current(IV)              Resistance vs. Drain Current(V)<br>100 100<br>VGS = -1.8V<br>Pulsed<br>10 10 Ta = 125ºC<br>Ta = 75ºC<br>Ta = 125ºC  Ta = 25ºC<br>Ta = 75ºC  Ta = -25ºC<br>Ta = 25ºC<br>Ta = -25ºC<br>VGS = -1.5V<br>Pulsed<br>1 1<br>0.01 0.1 1 10 0.01 0.1 1 10<br>Drain Current : -ID [A]  Drain Current : -ID [A]<br> [mΩ]   [mΩ]<br>DS(on) DS(on)<br>: R : R<br>Static Drain - Source On-State Resistance   Static Drain - Source On-State Resistance<br> [mΩ]   [mΩ]<br>DS(on) DS(on)<br>: R : R<br>Static Drain - Source On-State Resistance   Static Drain - Source On-State Resistance<br>**----- End of picture text -----**<br>


www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

8/11 

Data Sheet 

**RQ1A070AP** 

## l **Electrical characteristic curves** 

## Fig.19 Typical Capacitance 

## Fig.20 Switching Characteristics 

## vs. Drain - Source Voltage 

**==> picture [234 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000<br> Ta = 25ºC<br> f=1MHz<br> VGS=0V  Ciss<br>10000<br>Coss<br>1000<br>Crss<br>100<br>0.01 0.1 1 10 100<br>Capacitance : C [pF]<br>**----- End of picture text -----**<br>


Drain - Source Voltage : -VDS [V] 

Fig.21 Dynamic Input Characteristics 

**==> picture [217 x 224] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>Ta = 25ºC<br>4 VDD= -6V<br>ID= -7A<br>Pulsed<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100<br>Total Gate Charge : Qg [nC]<br> [V]<br>GS<br>Gate - Source Voltage : -V<br>**----- End of picture text -----**<br>


**==> picture [227 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>tf  td(off)<br>1000<br>100<br>10 VDD ≒ -6V<br>VRGSG=10W = -4.5V  td(on)  tr<br>Ta = 25ºC<br>Pulsed<br>1<br>0.01 0.1 1 10<br>Drain Current : -ID [A]<br>Switching Time : t [ns]<br>**----- End of picture text -----**<br>


## Fig.22 Source Current vs. Source Drain Voltage 

**==> picture [222 x 222] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>VGS=0V<br>pulsed<br>1<br>TTTTaaaa=125=75=25= -25°°C C °°C C<br>0.1<br>0.01<br>0.0 0.5 1.0 1.5 2.0<br>Source-Drain Voltage : -VSD [V]<br> [A]<br>S<br>Source Current : -I<br>**----- End of picture text -----**<br>


www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

9/11 

Data Sheet 

**RQ1A070AP** 

## l **Measurement circuits** 

Fig.1-1  Switching Time Measurement Circuit 

**==> picture [63 x 52] intentionally omitted <==**

Fig.2-1  Gate Charge Measurement Circuit 

**==> picture [62 x 51] intentionally omitted <==**

Fig.1-2 Switching Waveforms 

**==> picture [142 x 81] intentionally omitted <==**

Fig.2-2  Gate Charge Waveform 

**==> picture [118 x 101] intentionally omitted <==**

www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

10/11 

Data Sheet 

**RQ1A070AP** 

## l **Dimensions** (Unit : mm) 

**==> picture [447 x 328] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>A<br>TSMT8<br>c<br>e<br>e b<br>x S A<br>S<br>y S<br>b2<br>Pattern of terminal position areas<br>[Not a recommended pattern of soldering pads]<br>L1 Lp1<br>E<br>E H<br>L Lp<br>l2<br>e1<br>A<br>A1 l1<br>**----- End of picture text -----**<br>


|||||||
|---|---|---|---|---|---|
||A<br>A1<br>b<br>c<br>D<br>E<br>e<br>HE<br>L<br>L1<br>Lp<br>Lp1<br>x<br>DIM|MILIMETERS||INCHES||
|||MIN|MAX|MIN|MAX|
|||0.75|0.85|0.030|0.033|
|||0.00|0.05|0.000|0.002|
|||0.27|0.37|0.011|0.015|
|||0.12|0.22|0.005|0.009|
|||2.90|3.10|0.114|0.122|
|||2.30|2.50|0.091|0.098|
|||0.65||0.026||
|||2.70|2.90|0.106|0.114|
|||0.10|0.30|0.004|0.012|
|||0.10|0.30|0.004|0.012|
|||0.19|0.39|0.007|0.015|
|||0.19|0.39|0.007|0.015|
|||-|0.10|-|0.004|
||y|-|0.10|-|0.004|
|||||||
||b2<br>e1<br>DIM|MILIMETERS||INCHES||
|||MIN|MAX|MIN|MAX|
|||-|0.47|-|0.019|
|||2.41||0.095||
||l1<br>l2|-|0.49|-|0.019|
|||-|0.49|-|0.019|



Dimension in mm / inches 

www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

**2012.11 -  Rev.C** 

11/11 

Notice 

## **N o t e s** 

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 

The content specified herein is subject to change for improvement without notice. 

The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 

Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 

The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). 

The Products specified in this document are not designed to be radiation tolerant. 

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 

Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. 

The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. 

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. 

**==> picture [80 x 61] intentionally omitted <==**

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

## ROHM  Customer Support System 

http://www.rohm.com/contact/ 

www.rohm.com © 2012  ROHM Co., Ltd. All rights reserved. 

R1120A 



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