# Bridge Rectifier, AEC-Q101, Single Phase, 400 V, 800 mA, TO-269AA, 4 Pins, 1 V

![Product image](https://novapart.co/image/farnell:3519432RL/)

**URL**: https://novapart.co/products/RMB4S/bridge-rectifier-aec-q101-single-phase-400-v-800
**SKU**: RMB4S
**Manufacturer**: TAIWAN SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Bridge Rectifier Diodes
**Price**: €0.2430
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 4Pins |
| No. Of Phases | Single Phase |
| Product Range | RMBxS Series |
| Forward Voltage Max | 1V |
| Forward Surge Current | 30A |
| Average Forward Current | 800mA |
| Bridge Rectifier Mounting | Surface Mount |
| Operating Temperature Max | 150°C |
| Bridge Rectifier Case Style | TO-269AA |
| Repetitive Peak Reverse Voltage | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3519432RL/)

Taiwan Semiconductor 

## % SEMICONDUCTOR **RMB2S – RMB6S** 

## **0.8A, 200V - 600V Fast Recovery Bridge Rectifier** 

## FEATURES 

- AEC-Q101 qualified available 

- Ideal for automated placement 

- Reliable low cost construction utilizing molded plastic technique 

- High surge current capability 

- UL Recognized File # E-326854 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- Switching mode power supply (SMPS) 

- Adapters 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|0.8|A|
|VRRM|200 - 600|V|
|IFSM|30|A|
|TJ MAX|150|°C|
|Package|TO-269AA (MBS)||
|Configuration|Quad||



## Pd) ROHS HALOGEN[REE] 

- Lighting application 

## MECHANICAL DATA 

- Case: TO-269AA (MBS) 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

**==> picture [23 x 9] intentionally omitted <==**

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MBS<br>**----- End of picture text -----**<br>


- Polarity: As marked 

- Weight: 0.120g (approximately) 

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oar<br>**----- End of picture text -----**<br>


ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) 

|ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~Ge~~||SYMBOL<br>~~Ge~~|RMB2S<br>~~Ge~~|RMB4S<br>~~Ge~~|RMB6S<br>~~Ge~~|UNIT<br>~~Ge~~|
|Marking code on the device<br>~~GO~~||~~GO~~|RMB2S<br>~~GO~~|RMB4S<br>~~GO~~|RMB6S<br>~~GO~~|~~GO~~|
|Repetitive peak reverse voltage<br>~~Ge~~<br>~~ee~~||VRRM<br>~~Ge~~<br>|200<br>~~Ge~~<br>~~Ge~~<br>|400<br>~~Ge~~<br>~~Ge~~<br>|600<br>~~Ge~~<br>|V<br>~~Ge~~|
|Reverse voltage, total rms value<br>~~se~~<br>~~ee~~||VR(RMS)<br>~~se~~<br>~~eee~~|140<br>~~se~~<br>~~Ge~~<br>~~eee~~|280<br>~~se~~<br>~~Ge~~<br>~~eee~~|420<br>~~se~~<br>~~eee~~|V<br>~~se~~|
|Forward current<br>~~ee~~|On glass-epoxy<br>~~ee~~|IF<br> ~~eee~~<br>~~ee ee~~|0.5<br>~~Ge~~<br>~~eee~~|||A|
||On aluminum substrate<br>~~ee ~~||0.8<br>~~Ge~~<br>~~eee~~<br>~~ee~~|||A|
|Surge peak forward current, 8.3ms single<br>half sine-wave superimposed on rated load<br> <br>~~ee~~||IFSM<br> ~~eee~~<br>~~ee~~<br>~~ee ee~~|30<br>~~eee~~<br>~~ee~~<br>~~ee~~|||A<br>~~ee~~|
|Rating for fusing (t<8.3ms)<br>~~se~~||I2t<br>~~ee ee~~<br>~~se~~|3.74<br>~~ee~~<br>~~se~~|||A2s<br>~~se~~|
|Junction temperature<br>~~eG~~||TJ<br>~~eG~~|- 55 to +150<br>~~eG~~|||°C<br>~~eG~~|
|Storage temperature<br>~~eG~~||TSTG<br>~~eG~~|- 55 to +150<br>~~eG~~|||°C<br>~~eG~~|



1 Version: I2103 

## **RMB2S – RMB6S** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-ambient thermal resistance|RӨJA|85|°C/W|



## ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) 

|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|Forward voltage per diode(1)|IF= 0.4A,TJ= 25°C|VF|-|1|V|
|Reverse current @ rated VRper diode(2)|TJ= 25°C|IR|-|5|µA|
||TJ= 125°C||-|100|µA|
|Junction capacitance per diode|1MHz, VR= 4.0V|CJ|13|-|pF|
|Reverse recovery time|IF= 0.5A, IR= 1.0A<br>Irr=0.25A|trr|-|150|ns|



## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING CODE(1)(2)|PACKAGE|PACKING|
|---|---|---|
|RMBxS|TO-269AA (MBS)|3,000 / Tape & Reel|
|RMBxSH|TO-269AA (MBS)|3,000 / Tape & Reel|



## **Notes:** 

1. “x” defines voltage from 200V(RMB2S) to 600V(RMB6S) 

2. “H” means AEC-Q101 qualified 

2 Version: I2103 

56__._._______ **RMB2S – RMB6S** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

**==> picture [225 x 402] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.8 TT TLL<br>Aluminum Substrate<br>0.6<br>0.4<br>0.2 we Glass Epoxy  e<br>0 oo N<br>0 25 50 75 100 125 150<br>AMBIENT TEMPERATURE (°C)<br>      Fig.3 Typical Reverse Characteristics<br>100<br>10 TJ=125 ° C<br>Saeco<br>1<br>S e e<br>0.1<br>0.01 Pt TJ=25 ° C<br>10 20 30 40 50 60 70 80 90 100<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (μA)<br>**----- End of picture text -----**<br>


**==> picture [232 x 402] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>25 CIC<br>20<br>15<br>10<br>CO TT<br>5<br>f=1.0MHz<br>Vsig=50mVp-p<br>0 rrTnatit<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>    Fig.4 Typical Forward Characteristics<br>10<br>Ea<br>1<br>= =— LL<br>Pulse width 300μs<br>1% duty cycle<br>0.1 Jf<br>0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6<br>FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


## **Fig.5 Maximum Non-Repetitive Forward Surge Current** 

**==> picture [351 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br>30 SS 8.3ms single half sine wave<br>25<br>20<br>S E<br>15<br>pt Le EL<br>10<br>ee Sl<br>50 FfP| || TLRELEEEL<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: I2103 

**RMB2S – RMB6S** TAIWANSEMICONDUCTOR[pg Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram** 

4 Version: I2103 

## % SEMICONDUCTOR(pg **RMB2S – RMB6S** Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**TO-269AA (MBS)** 

## SUGGESTED PAD LAYOUT 

## MARKING DIAGRAM 

P/N = Marking Code YW = Date Code F = Factory Code 

5 Version: I2103 

**RMB2S – RMB6S** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: I2103 



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- [Supplier page](https://es.farnell.com/taiwan-semiconductor/rmb4s-rcg/bridge-rectifier-400v-0-8a-to/dp/3519432RL)
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