# Power MOSFET, N Channel, 60 V, 500 mA, 7.5 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1680362RL/)

**URL**: https://novapart.co/products/RK7002T116/power-mosfet-n-channel-60-v-500-ma-75-ohm-sot-23
**SKU**: RK7002T116
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1130
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.85V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 225mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 500mA |
| Drain Source On State Resistance | 7.5ohm |
| Gate Source Threshold Voltage Max | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1680362RL/)

## 2.5V Drive Nch MOSFET 

## **RJU003N03** 

## **Structure** 

Silicon N-channel MOSFET 

## **Features** 

1) Low On-resistance. 

2) Low voltage drive (2.5V drive). 

## **Applications** 

Switching 

## **Dimensions** (Unit : mm) 

**==> picture [174 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
UMT3<br>2.0 0.9<br>0.3 0.2 0.7<br>(3)<br>ca (2) (1) lla<br>0.65 0.65<br>an 1.3 0.15<br>(1) Source Each lead has same dimensions<br>(2) Gate<br>(3) Drain Abbreviated symbol : LP<br>1.25 2.1<br>0.1Min.<br>**----- End of picture text -----**<br>


## **Packaging specifications and hFE** 

|Type|Package|Taping|
|---|---|---|
||Code|T106|
||Basic ordering unit (pieces)|3000|
|RJU003N03|||



## **Inner circuit** 

**==> picture [130 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
(3)<br>(2) ∗ 2<br>(1)  Source<br>∗ 1 (2)  Gate<br>∗ 1 ESD PROTECTION DIODE (1) (3)  Drain<br>∗ 2 BODY DIODE<br>**----- End of picture text -----**<br>


## **Absolute maximum ratings** (Ta=25°C) 

|**Absolute maximum ratings**(Ta=25°C)|**Absolute maximum ratings**(Ta=25°C)|(Ta=25°C)°C)C)||
|---|---|---|---|
|Parameter||Symbol|Limits|
|Drain-source voltage||VDSS|30|
|Gate-source voltage||VGSS|±12|
|Drain current|Continuous|ID|±300|
||Pulsed|∗1<br>IDP|±1.2|
|Total power dissipation||∗2<br>PD|200|
|Channel temperature||Tch|150|
|||Tstg|−55 to+150|



- ∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1% 

∗ 2 Each terminal mounted on a recommended land 

## **Thermal resistance** 

|**Thermal resistance**|||
|---|---|---|
|Parameter|Symbol|Limits|
|Channel to ambient|Rth(ch-a)<br>∗|625|



∗ Each terminal mounted on a recommended land 

www.rohm.com 

**2009.03 - Rev.A** 

1/4 

○c 2009 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**RJU003N03** 

## � **Electrical characteristics** (Ta=25°C) 

|�**Electrical characteristics**|(Ta=25°|(Ta=25°|(Ta=25°|C)|||||
|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|||Min.|Typ.|Max.|Unit|Conditions|
|Gate-source leakage|IGSS|||−|−|±10|µA|VGS=±12V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||30|−|−|V|ID= 1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||−|−|1|µA|VDS= 30V, VGS=0V|
|Gate threshold voltage|VGS (th)|||0.8|−|1.5|V|VDS= 10V, ID= 1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|0.8|1.1|Ω|ID= 300mA, VGS= 4.5V|
|||||−|0.9|1.3|Ω|ID= 300mA, VGS= 4V|
|||||−|1.4|1.9|Ω|ID= 300mA, VGS= 2.5V|
|Forward transfer admittance||Yfs|∗|0.4|−|−|S|VDS= 10V, ID= 300mA|
|Input capacitance|Ciss|||−|24|−|pF|VDS= 10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|||−|11|−|pF||
|Reverse transfer capacitance|Crss|||−|5|−|pF||
|Turn-on delay time|td (on)<br>∗|||−|6|−|ns|VDD15V<br>ID= 150mA<br>VGS= 4V<br>RL=100Ω<br>RG=10Ω|
|Rise time|tr<br>∗|||−|4|−|ns||
|Turn-off delay time|td (off)<br>∗|||−|9|−|ns||
|Fall time|tf<br>∗|||−|32|−|ns||



∗ Pulsed 

## � **Body diode characteristics** (Source-drain) (Ta=25°C) 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD|−|−|1.2|V|IS= 200mA, VGS=0V|



www.rohm.com 

**2009.03 - Rev.A** 

2/4 

○c 2009 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**RJU003N03** 

## � **Electrical characteristics curves** 

**==> picture [469 x 583] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.3 0.3 1<br>VGS= 10V VGS= 10V Ta=25°C VDS= 10V<br>0.25 V GS = 4.5V 0.25 V GS = 4.5V Pulsed Pulsed<br>0.2 VGS= 4.0V Ta=25°CPulsed 0.2 V V GSGS= 4.0V = 2.0V 0.1<br>VGS= 1.8V<br>0.15 VGS= 1.6V 0.15 VGS= 1.6V TaTa= 75°C= 125°C<br>0.1 VGS= 1.4V 0.1 0.01 Ta= 25°C<br>0.05 0.05 VGS= 1.2V Ta= - 25°C<br>VGS= 1.2V<br>0 0 0.001<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 1 2 3<br>DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3  Typical Transfer Characteristics<br>10 TaPulsed= 25°C V GS = 2.5V 10 VPulsedGS= 4.5V Ta=125°C Ta=75°C 10 VPuGSlsed= 4.0V Ta=125°C Ta=75°C<br>VGS= 4.0V Ta=25°C Ta=25°C<br>VGS= 4.5V Ta= -25°C Ta= -25°C<br>1 1 1<br>0.1 0.1 0.1<br>0.01 0.1 1 0.01 0.1 1 0.01 0.1 1<br>DRAIN-CURRENT : ID[mA] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>Fig.4  Static Drain-Source On-State Fig.5  Static Drain-Source On-State Fig.6  Static Drain-Source On-State<br>           Resistance vs. Drain Current(Ⅰ)            Resistance vs. Drain Current(Ⅱ)            Resistance vs. Drain Current(Ⅲ)<br>10 1 10<br>Ta=125°C VGS=0V<br>V GS = 2.5V Ta=75°C Pulsed<br>Pulsed Ta=25°C 8<br>Ta= -25°C<br>6 ID= 100mA<br>1 0.1<br>Ta=125°C 4 I D = 300mA<br>Ta=75 ° C<br>Ta=25°C Ta=25°C<br>Ta=-25 ° C 2 Pulsed<br>0.1 0.01 0<br>0.01 0.1 1 0 0.5 1 1.5 0 2 4 6 8 10<br>DRAIN-CURRENT : ID[A] SOURCE-DRAIN VOLTAGE : GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.7  Static Drain-Source On-State Fig.8 Reverse Drain Current Fig.9  Static Drain-Source On-State<br>           Resistance vs. Drain Current(Ⅳ)           vs. Sourse-Drain Voltage              Resistance vs. Gate Source Voltage<br>[A]D [A]D [A]D<br>DRAIN CURRENT : I DRAIN CURRENT : I<br>DRAIN CURRENT : I<br>]Ω ]Ω ]Ω<br>(on)[ (on)[ (on)[<br>DS DS DS<br>RESISTANCE : R RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>]Ω ]Ω<br>(on)[RESISTANCE : RDS (ON)[RESISTANCE : RDS<br>STATIC DRAIN-SOURCE ON-STATE REVERSE DRAIN CURRENT : Is [A] STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br>


www.rohm.com 

**2009.03 - Rev.A** 

3/4 

○c 2009 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**RJU003N03** 

**==> picture [453 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 40 100<br>1000 td(off) t f V Ta=25°CV DD GS = = 15V  4.0V 30 VVDD DD = 24V=15V Ciss<br>RG=10Ω VDD=10V<br>Pulsed<br>100 20 10<br>tr Crss<br>Ta=25°C<br>10 td(on) 10 I D = 0.3A Ta=25°C Coss<br>RG=10Ω f=1MHz<br>Pulsed VGS=0V<br>1 0 1<br>0.001 0.01 0.1 1 0 0.5 1 1.5 2 0.01 0.1 1 10 100<br>DRAIN-CURRENT : ID[A] TOTAL GATE CHARGE : Qg  [nC] DRAIN-SOURCE VOLTAGE : VDS[V]<br>Fig.12  Typical Capacitance<br>Fig.10 Switching Characteristics Fig.11 Dynamic Input Characteristics              vs. Drain-Source Voltage<br> [V]<br>GS<br>SWITCHING TIME : t [ns] CAPACITANCE : C [pF]<br>GATE-SOURCE VOLTAGE : V<br>**----- End of picture text -----**<br>


**==> picture [396 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10<br>Operation in this area is limited by RDS(ON)<br>(V GS =4.5V)<br>100us<br>1 1<br>1ms<br>P W  = 10ms<br>0.1 0.1<br>DC operation<br>   Ta = 25°C<br>   Single Pulse<br>0.01 0.01    Rth(ch-a)(t) = r(t)×Rth(ch-a)<br>Ta = 25°C    Rth(ch-a) = 625 °C/W<br>Single Pulse      Mounted on a SERAMIC board<br>MOUNTED ON SERAMIC BOARD<br>0.001 0.001<br>0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>DRAIN-SOURCE VOLTAGE : VDS[V] PULSE WIDTH : Pw(s)<br>Fig.13 Maximum Safe Operating Aera Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width<br>  (A)D<br>RESISTANCE : r (t)<br>DRAIN CURRENT : I<br>NORMARIZED TRANSIENT THERMAL<br>**----- End of picture text -----**<br>


www.rohm.com 

**2009.03 - Rev.A** 

4/4 

○c 2009 ROHM Co., Ltd. All rights reserved. 

Appendix 

## Notes 

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 

The content specified herein is subject to change for improvement without notice. 

The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 

Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 

The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). 

The Products are not designed to be radiation tolerant. 

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 

Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. 

The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. 

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. 

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. 

ROHM  Customer Support System 

www.rohm.com 

**THE AMERICAS** / **EUROPE** / **ASIA** / **JAPAN** 

**Contact us** : webmaster@ rohm.co.jp 

Copyright © 2009 ROHM Co.,Ltd. 

TEL : +81-75-311-2121 FAX : +81-75-315-0172 

21  Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan 

Appendix-Rev4.1 



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---

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