# Fast / Ultrafast Diode, Soft, 600 V, 30 A, Single, 2.1 V, 40 ns, 325 A ![Product image](https://novapart.co/image/farnell:9843922/) **URL**: https://novapart.co/products/RHRP3060/fast-ultrafast-diode-soft-600-v-30-a-single-21-40 **SKU**: RHRP3060 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes **Price**: €0.8010 **Stock**: 10+ ## Description Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Diode Configuration:Single; Forward Voltage VF Max:2.1V; Reverse Recovery Time trr Max:40ns; Forward Surge Current Ifsm Max ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 2 Pin | | Product Range | - | | Qualification | - | | Diode Case Style | TO-220AC | | Diode Configuration | Single | | Forward Voltage Max | 2.1V | | Forward Surge Current | 325A | | Reverse Recovery Time | 40ns | | Average Forward Current | 30A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 600V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9843922/) ## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ## **RHRP3060 30 A, 600 V Hyperfast Diodes** ## **Features** - Hyperfast Recovery trr = 45 ns (@ IF = 30 A) - Max Forward Voltage, VF = 2.1 V (@ TC = 25°C) - 600 V Reverse Voltage and High Reliability - Avalanche Energy Rated - RoHS Compliant - ## **Applications** - Switching Power Supplies ## **Description** The RHRP3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. - Power Switching Circuits - General Purpose **Ordering Informations** **==> picture [381 x 155] intentionally omitted <==** **----- Start of picture text -----**
Part Number Package Brand
RHRP3060 TO-220AC-2L RHRP3060
—=
Pin Assignments
TO-220 1. Cathode 2. Anode
" Ht,
**----- End of picture text -----**
## **Absolute Maximum Ratings** |**Absolute Maximum Ratings**|**Absolute Maximum Ratings**||| |---|---|---|---| |**Symbol**|**Parameter**|**RHRP3060**|**Unit**| |VRRM|Peak Repetitive Reverse Voltage|600|V| |VRWM|Working Peak Reverse Voltage|600|V| |VR|DC Blocking Voltage|600|V| |IF(AV)|Average Rectified Forward Current (TC= 120C)|30|A| |IFRM|Repetitive Peak Surge Current (Square Wave, 20KHz)|70|A| |IFSM|Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60Hz)|325|A| |PD|Maximum Power Dissipation|125|W| |EAVL|Avalanche Energy (See Figures 10 and 11)|20|mJ| |TJ, TSTG|Operating and Storage Temperature|-65 to 175|C| **1** ©2005 Semiconductor Components Industries, LLC. November-2017, Rev. 3 Publication Order Number: RHRP3060/D ## **Electrical Characteristics** TC = 25°C unless otherwise noted |**Symbol**|**Test Conditions**|**RHRP3060**|**RHRP3060**|**RHRP3060**|**Unit**| |---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**|| |VF|IF= 30 A|-|-|2.1|V| ||IF= 30 A, TC= 150C|-|-|1.7|V| ||||||| |IR|VR= 400 V|-|-|-|A| ||VR= 600 V|-|-|250|A| ||VR= 400 V, TC= 150C|-|-|-|mA| ||VR= 600 V, TC= 150C|-|-|1.0|mA| |trr|IF= 1 A, dlF/dt = 200 A/s|-|-|40|ns| ||IF= 30 A, dlF/dt = 200 A/s|-|-|45|ns| |ta|IF= 30 A, dlF/dt = 200 A/s|-|22|-|ns| |tb|IF= 30 A, dlF/dt = 200 A/s|-|18|-|ns| |QRR|IF= 30 A, dlF/dt = 200 A/s|-|100|-|nC| |CJ|VR= 600 V, IF= 0 A|-|85|-|pF| |RJC||-|-|1.2|C/W| - DEFINITIONS - VF = Instantaneous forward voltage (pw = 300s, D = 2%) - IR = Instantaneous reverse current. - trr = Reverse recovery time (See Figure 9), summation of ta + tb. - ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. - CJ = Junction Capacitance. - RJC = Thermal resistance junction to case. pw = pulse width. - D = Duty cycle. **www.onsemi.com** **2** ## **Typical Performance Characteristics** **==> picture [467 x 618] intentionally omitted <==** **----- Start of picture text -----**
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Currnt vs Reverse Voltage
300
2000
175  C
100
100
100  C
10 100  C
175  C 25 [o] C
10
1
0.1 25  C
1 0.01
0 1 2 3 4 0 100 200 300 400 500 600
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. trr, ta and tb Curves vs Figure 4. trr, ta and tb Curves vs
Forward Current Forward Current
50 TC = 25  C, dlF/dt = 200A/  s 100 TC = 100  C, dlF/dt = 200A/  s
40 80
30 trr 60 trr
20 ta 40 ta
10 t b 20 t b
0 0
1 10 30 1 10 30
IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A)
Figure 5. trr, ta and tb Curves vs Figure 6. Current Derating Curve
Forward Current
150 30
TC = 175  C, dlF/dt = 200A/  s
125 25
DC
100 t rr 20
SQ.WAVE
75 15
50 ta 10
25 tb 5
0 0
1 10 30 75 100 125 150 175
IF, FORWARD CURRENT (A) TC, CASE TEMPERATURE ( [o] C)
A)
μ
, FORWARD CURRENT (A)IF , REVERSE CURRENT (IR
t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
, AVERAGE FORWARD CURRENT (A)
IF(AV)
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**www.onsemi.com** **3** ## **Typical Performance Characteristics (Continued)** **Figure 7. Junction Capacitance vs Reverse Voltage** **==> picture [224 x 181] intentionally omitted <==** **----- Start of picture text -----**
150
125
100
75
50
25
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
, JUNCTION CAPACITANCE (pF)
J
C
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## **Test Circuit and Waveforms** **Figure 8. trr Test Circuit** **Figure 9. trr Waveforms and Definitions** **==> picture [458 x 308] intentionally omitted <==** **----- Start of picture text -----**
VGE AMPLITUDE AND
RG CONTROL dIF/dt L
t1 AND t2 CONTROL IF
DUT CURRENT IF dIdtF ta trr tb
RG SENSE + 0
VGE t1 IGBT - VDD 0.25 IRM
t2 IRM
Figure 10. Avalanche Energy Test Circuit Figure 11. Avalanche Current and Voltage
Waveforms
I = 1A
L = 40mH
R < 0.1 Ω VAVL
EAVL = 1/2LI [2] [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL)) L R
IL IL
CURRENT + I V
SENSE VDD
Q1
VDD
t0 t1 t2 t
DUT -
**----- End of picture text -----**
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