# Fast / Ultrafast Diode, 1.2 kV, 30 A, Single, 3.2 V, 85 ns, 300 A

![Product image](https://novapart.co/image/farnell:3606209/)

**URL**: https://novapart.co/products/RHRP30120/fast-ultrafast-diode-12-kv-30-a-single-32-v-85-ns
**SKU**: RHRP30120
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €1.3200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 3.2V |
| Forward Surge Current | 300A |
| Reverse Recovery Time | 85ns |
| Average Forward Current | 30A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3606209/)

_**RHRP30120**_ 

_**Data Sheet November 2013**_ ~~0Ee~~ 

## _**Features**_ 

## _**30 A, 1200 V, Hyperfast Diode**_ 

Hyperfast Recovery t rr = 85 ns (@ IF = 30 A) Max Forward Voltage, VF = 3.2 V (@ TC = 25 C) 1200 V Reverse Voltage and High Reliability Avalanche Energy Rated RoHS Compliant 

The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many  power switching circuits reducing power loss in the switching transistors. 

**==> picture [481 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
Applications<br>and electrical noise in many  power switching circuits<br>reducing power loss in the switching transistors. SwitchingPower Supplies<br>Power Switching  Circuits<br>GeneralPurpose<br>OrderingInformation<br>PART NUMBER PACKAGE BRAND Packaging<br>JEDEC TO−220AC<br>RHRP30120 TO−220AC RHR30120<br>ANODE<br>NOTE: When ordering,  use  the entire  part  number. CATHODE<br>CATHODE<br>Symbol (FLANGE)<br>K<br>| | s we<br>x<br>|<br>A<br>**----- End of picture text -----**<br>


## **AbsoluteMaximumRatings** T C =25 oC 

|**AbsoluteMaximumRatings **T C =25=25<br>oCC||||
|---|---|---|---|
|||**RHRP30120**|**UNIT**|
|PeakRepetitiveReverseVoltage ...........................................................V|RRM|1200|V|
|WorkingPeakReverseVoltage............................................................V|RWM|1200|V|
|DCBlockingVoltage .......................................................................V|R|1200|V|
|AverageRectifiedForwardCurrent..........................................................I|F(AV)|30|A|
|(TC=78 oC)||||
|RepetitivePeakSurgeCurrent ............................................................. I|FRM|60|A|
|(Square Wave, 20 kHz)||||
|NonrepetitivePeakSurgeCurrent........................................................... I|FSM|300|A|
|(Halfwave, 1 Phase,  60 Hz)||||
|MaximumPowerDissipation.................................................................P|D|125|W|
|AvalancheEnergy(SeeFigures7and8) ..................................................... E|AVL|30|mJ|
|OperatingandStorageTemperature...................................................... T|STG,T J|−65 to 175|oC|



©2001 Semiconductor Components Industries, LLC. August − 2024, Rev 4 

Publication Order Number: RHRP30120/D 

**1** 

_**RHRP30120**_ 

t l 

## **ElectricalSpecifications** TC =25[o] C,UnlessOtherwiseSpecified 

|**ElectricalSpecif**|**ications**<br>TC=25 oC,UnlessOth|erwiseSpecified||||
|---|---|---|---|---|---|
|**SYMBOL**|**TESTCONDITION**|**MIN**|**TYP**|**MAX**|**UNIT**|
|VF|IF= 30 A|−|−|3.2|V|
||IF=30<br>A,T<br>C =150<br>~~o~~C|−|−|2<br>.6|V|
|IR|VR= 1200 V|−|−|250|A|
||VR= 1200 V, TC=150<br>~~o~~C|−|−|1|m<br>A|
|trr|IF=1<br>A,<br>di F/dt = 100 A/�s|−|−|6<br>5|ns|
||IF=30 A,di<br>F/dt = 100 A/�s|−|−|8<br>5|ns|
|ta|IF=30 A,di<br>F/dt = 100 A/�s|−|48|−|ns|
|tb|IF=30 A,di<br>F/dt = 100 A/�s|−|22|−|ns|
|R<br>JC||−|−|1<br>.2|oC/W|
|DEFINITIONS<br>VF=Instantaneousforwardvoltage(pw=300 �s,D=2%).<br>IR=Instantaneousreversecurrent.<br>Trr= Reverse recovery time (See Figure 6), summation of ta+t b.<br>ta= Time to reach peak reversecurrent(See Figure6).<br>tb=<br>T<br>i<br>m<br>e<br>f<br>r<br>o<br>m<br>p<br>e<br>a<br>k<br>IRMto projected zero crossing of IRMb<br>a<br>s<br>e<br>d<br>o<br>n<br>a<br>s<br>t<br>r<br>a<br>i<br>g<br>h<br>RM through25% of IRM (See Figure 6).<br>R<br>JC =Thermalresistancejunctiontocase.<br>pw=pulsewidth.<br>D=dutycycle.<br>||||||



## _**TypicalPerformanceCurves**_ 

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**----- Start of picture text -----**<br>
500<br>100 175 [o] C<br>10<br>1.0 100 [o] C<br>0.1<br>0.01<br>25 [o] C<br>0.001<br>0 200 400 600 800 1000 1200<br>VR,REVERSEVOLTAGE(V)<br>A)<br>�<br>,REVERSECURRENT(<br>IR<br>**----- End of picture text -----**<br>


**==> picture [245 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>100<br>175 [o] C<br>10<br>100 [o] C<br>25 [o] C<br>1<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>VF,FORWARDVOLTAGE(V)<br>,FORWARDCURRENT(A)<br>IF<br>**----- End of picture text -----**<br>


**FIGURE1. FORWARDCURRENTvsFORWARDVOLTAGE** 

**FIGURE2. REVERSECURRENTvsREVERSEVOLTAGE** 

**www.onsemi.com** 

**2** 

_**RHRP30120**_ 

## _**TypicalPerformanceCurves**_ 

## **(Continued)** 

**==> picture [229 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>75<br>trr<br>50<br>ta<br>25<br>tb<br>0<br>1 10 30<br>IF,FORWARDCURRENT(A)<br>t,TIME(ns)<br>**----- End of picture text -----**<br>


**FIGURE3. t rr,t a ANDt b CURVESvsFORWARDCURRENT** 

**==> picture [230 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>30<br>DC<br>20<br>SQ.WAVE<br>10<br>0<br>25 50 75 100 125 150 175<br>TC,CASETEMPERATURE( oC)<br>,AVERAGEFORWARDCURRENT(A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**==> picture [152 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIGURE4. CURRENTDERATINGCURVE<br>**----- End of picture text -----**<br>


## _**TestCircuitsandWaveforms**_ 

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**----- Start of picture text -----**<br>
VGE AMPLITUDEAND<br>RG CONTROLdI F/dt L<br>t1AND t2 CONTROLI F<br>DUT CURRENT<br>RG SENSE<br>+<br>VGE t1 IGBT −VDD<br>t2<br>FIGURE5. t rr TESTCIRCUIT<br>IMAX =1.225A<br>L=40mH<br>R<0.1<br>EAVL =1/2LI [2] [VR(AVL)/(VR(AVL) −VDD)]<br>Q1 =IGBT(BV CES >DUTV R(AVL)) LR<br>CURRENT +<br>SENSE VDD<br>Q1<br>VDD<br>DUT −<br>**----- End of picture text -----**<br>


**FIGURE7. AVALANCHEENERGYTESTCIRCUIT** 

**==> picture [217 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF dIdtF ta trr tb<br>0<br>0.25I RM<br>IRM<br>FIGURE6. t rr WAVEFORMSANDDEFINITIONS<br>**----- End of picture text -----**<br>


**==> picture [221 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
VAVL<br>IL IL<br>IV<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**FIGURE8. AVALANCHECURRENTANDVOLTAGE WAVEFORMS** 

**www.onsemi.com** 

**3** 

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## **LITERATURE FULFILLMENT** : 

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