# Fast / Ultrafast Diode, 600 V, 15 A, Single, 2.1 V, 40 ns, 200 A

![Product image](https://novapart.co/image/farnell:3606208/)

**URL**: https://novapart.co/products/RHRP1560-F102/fast-ultrafast-diode-600-v-15-a-single-21-40-ns
**SKU**: RHRP1560-F102
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.6810
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (19-Jan-2021) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 2.1V |
| Forward Surge Current | 200A |
| Reverse Recovery Time | 40ns |
| Average Forward Current | 15A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3606208/)

## **ON Semiconductor** 

## **Is Now** 

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**To learn more about onsemi™, please visit our website at www.onsemi.com** 

**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

# _**RHRP1540, RHRP1560**_ 

## _**Data Sheet November 2013**_ ~~ee~~ _**15 A, 400 V - 600 V, Features Hyperfast Diode**_ • Hyperfast Recovery trr = 40 ns (@ IF = 15 A)F = 15 A) = 15 A) = 40 ns (@ IF = 15 A)F = 15 A) = 15 A) 

- Hyperfast Recovery trr = 40 ns (@ IF = 15 A)F = 15 A) = 15 A) 

- Max Forward Voltage, VF = 2.1 V (@ TC = 25°C) 

The RHRP1540, RHRP1560 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. 

- 400 V, 600 V Reverse Voltage and High Reliability 

- Avalanche Energy Rated 

- RoHS Compliant 

## _**Applications**_ 

- Switching Power Supplies 

- Power Switching Circuits 

- General Purpose 

## _**Ordering Information**_ 

## _**Packaging**_ 

**PART NUMBER PACKAGE BRAND** RHRP1540 TO-220AC -2L RHRP1540 RHRP1560 TO-220AC -2L RHRP1560 ~~—_—~~ NOTE: When ordering, use the entire part number. 

**==> picture [70 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
 JEDEC TO-220AC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ANODE<br>CATHODE<br>CATHODE<br>(FLANGE)<br>**----- End of picture text -----**<br>


## _**Symbol**_ 

## **K** 

## **A** 

**Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified 

|**Absolute Maximum Ratings**<br>TC = 25C = 25= 25[o]C, Unless Otherwise Specified||||
|---|---|---|---|
||**RHRP1540**|**RHRP1560**|**UNIT**|
|Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM|400|600|V|
|Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM|400|600|V|
|DC Blocking Voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR|400|600|V|
|Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)<br>(TC= 140oC)|15|15|A|
|Repetitive Peak Surge Current  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM|30|30|A|
|(Square Wave, 20 kHz)||||
|Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM|200|200|A|
|(Halfwave, 1 Phase, 60 Hz)||||
|Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD|100|100|W|
|Avalanche Energy (See Figures 10 and 11)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL|20|20|mJ|
|Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ|-65 to 175|-65 to 175|oC|



©2001 Semiconductor Components Industries, LLC. October-2017, Rev. 3 

**1** 

Publication Order Number: 

RHRP1560/D 

_**RHRP1540, RHRP1560**_ 

## **Electrical Specifications** TC = 25[o] C, Unless Otherwise Specified 

|**Electrical Spec**|**ifcations**<br>TC= 25oC, Unless Oth|erwise Spec|ifed||||||
|---|---|---|---|---|---|---|---|---|
||||**RHRP1540**|||**RHRP1560**|||
|**SYMBOL**|**TEST CONDITION**|**MIN**|**TYP**|**MAX**|**MIN**|**TYP**|**MAX**|**UNIT**|
|VF|IF= 15 A|-|-|2.1|-|-|2.1|V|
||IF= 15 A, TC= 150oC|-|-|1.7|-|-|1.7|V|
|IR|VR= 400 V|-|-|100|-|-|-|µA|
||VR= 600 V|-|-|-|-|-|100|µA|
||VR= 400 V, TC= 150oC|-|-|500|-|-|-|µA|
||VR= 600 V, TC= 150oC|-|-|-|-|-|500|µA|
|Trr|IF= 1 A, dIF/dt = 100 A/µs|-|-|35|-|-|35|ns|
||IF= 15 A, dIF/dt = 100 A/µs|-|-|40|-|-|40|ns|
|ta|IF= 15 A, dIF/dt = 100 A/µs|-|20|-|-|20|-|ns|
|tb|IF= 15 A, dIF/dt = 100 A/µs|-|15|-|-|15|-|ns|
|Qrr|IF= 15 A, dIF/dt = 100 A/µs|-|40|-|-|40|-|nC|
|CJ|VR= 10 V, IF=<br>0 A|-|60|-|-|60|-|pF|
|RθJC||-|-|1.5|-|-|1.5|oC/W|



DEFINITIONS 

VF = Instantaneous forward voltage (pw = 300 µs, D = 2%). 

IR = Instantaneous reverse current . 

T rr = Reverse recovery time (See Figure 9), summation of ta + tb. 

ta = Time to reach peak reverse current (See Figure 9). 

tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). 

Q rr = Reverse Recovery Change. 

CJ = Junction Capacitance. 

RθJC = Thermal resistance junction to case. pw = Pulse Width. 

D = Duty Cycle. 

## _**Typical Performance Curves**_ 

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**----- Start of picture text -----**<br>
100<br>100 [o] C<br>10<br>175 [o] C 25 [o] C<br>1<br>0.5<br>0 0.5 1 1.5 2 2.5 3<br>VF, FORWARD VOLTAGE  (V)<br>, FORWARD CURRENT  (A)<br>IF<br>**----- End of picture text -----**<br>


**==> picture [240 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>175 [o] C<br>100<br>10 100 [o] C<br>1<br>0.1 25 [o] C<br>0.01<br>0 100 200 300 400 500 600<br>VR, REVERSE VOLTAGE (V)<br>A)<br>µ<br>, REVERSE  CURRENT (<br>IR<br>**----- End of picture text -----**<br>


**FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE** 

**FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE** 

**www.onsemi.com** 

**2** 

_**RHRP1540, RHRP1560**_ 

## _**Typical Performance Curves**_ **(Continued)** 

**==> picture [232 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>TC = 25 [o] C, dIF/dt = 100A/ µ s<br>40<br>T rr<br>30<br>20 ta<br>10<br>tb<br>0<br>0.5 1 5 10 15<br>IF, FORWARD CURRENT (A)<br>t, RECOVERY TIMES (ns)<br>**----- End of picture text -----**<br>


**==> picture [232 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>TC = 100 [o] C, dIF/dt = 100A/ µ s<br>80<br>T rr<br>60<br>40 ta<br>tb<br>20<br>0<br>0.5 1 5 10 15<br>IF, FORWARD CURRENT (A)<br>t, RECOVERY TIMES (ns)<br>**----- End of picture text -----**<br>


**FIGURE 3. T rr, ta AND tb CURVES vs FORWARD CURRENT** 

**FIGURE 4. T rr, ta AND tb CURVES vs FORWARD CURRENT** 

**==> picture [232 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
175<br>TC = 175 [o] C, dIF/dt = 100A/ µ s<br>150<br>125<br>T rr<br>100<br>75<br>tb<br>50<br>ta<br>25<br>0<br>0.5 1 5 10 15<br>IF, FORWARD CURRENT (A)<br>t, RECOVERY TIMES (ns)<br>**----- End of picture text -----**<br>


**FIGURE 5. T rr, ta AND tb CURVES vs FORWARD CURRENT** 

**==> picture [234 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
15<br>DC<br>12<br>SQ. WAVE<br>9<br>6<br>3<br>0<br>100 115 130 145 160 175<br>TC, CASE TEMPERATURE  ( [o] C)<br>, AVERAGE FORWARD CURRENT  (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**FIGURE 6. CURRENT DERATING CURVE** 

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**----- Start of picture text -----**<br>
175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 50 100 150 200<br>VR, REVERSE VOLTAGE  (V)<br>, JUNCTION CAPACITANCE (pF)<br>J<br>C<br>**----- End of picture text -----**<br>


**FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE** 

**www.onsemi.com** 

**3** 

_**RHRP1540, RHRP1560**_ 

## _**Test Circuits and Waveforms**_ 

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**----- Start of picture text -----**<br>
VGE AMPLITUDE AND<br>RG CONTROL dIF/dt L<br>t1 AND t2 CONTROL IF<br>DUT CURRENT<br>RG SENSE<br>+<br>VGE t1 IGBT - VDD<br>t2<br>**----- End of picture text -----**<br>


**FIGURE 8. T rr TEST CIRCUIT** 

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**----- Start of picture text -----**<br>
IMAX = 1A<br>L = 40mH<br>R < 0.1 Ω<br>EAVL = 1/2LI [2]  [VR(AVL)/(VR(AVL) - VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL)) L R<br>CURRENT +<br>SENSE VDD<br>Q1<br>VDD<br>DUT -<br>**----- End of picture text -----**<br>


**FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT** 

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**----- Start of picture text -----**<br>
IF dIdtF ta T rr tb<br>0<br>0.25 IRM<br>IRM<br>**----- End of picture text -----**<br>


**FIGURE 9. T trr WAVEFORMS AND DEFINITIONS** 

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**----- Start of picture text -----**<br>
VAVL<br>IL IL<br>I V<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS** 

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**4** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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