RHRG5060

Fast / Ultrafast Diode, 600 V, 50 A, Single, 2.1 V, 50 ns, 500 A

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Manufacturer: ONSEMI
Product type: Fast & Ultrafast Recovery Rectifier Diodes
No. of Pins: 2 Pin
Product Range: RHRG5
Diode Case Style: TO-247AB
Diode Configuration: Single
Forward Voltage Max: 2.1V
Forward Surge Current: 500A
Reverse Recovery Time: 50ns
Average Forward Current: 50A
Operating Temperature Max: 175°C
Repetitive Peak Reverse Voltage: 600V

Delivery and price
Units per pack	1000
Price	1.6 €
Current stock	200+
Lead time	7 days

Datasheet

_**RHRG5060**_ 

## _**Data Sheet**_ 

## _**November 2013**_ 

## _**50 A, 600 V, Hyperfast Diode**_ 

The RHRG5060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. 

## _**Features**_ 

- Hyperfast Recovery trr = 50 ns (@ IF = 50 A) 

- Max Forward Voltage, VF = 2.1 V (@ TC = 25°C) 

- 600 V Reverse Voltage and High Reliability 

- Avalanche Energy Rated 

- RoHS Compliant 

## _**Applications**_ 

- Switching Power Supplies 

- Power Switching Circuits 

## _**Ordering Information**_ 

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|||||
|---|---|---|---|
|PART NUMBER|PACKAGE|BRAND|
|RHRG5060|TO-247|-2L|RHRG5060|

**----- End of picture text -----**<br>


NOTE: When ordering, use the entire part number. 

## _**Symbol**_ 

- General Purpose 

## _**Packaging**_ 

## **JEDEC STYLE TO-247** 

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ANODE<br>CATHODE CATHODE<br>(BOTTOM<br>SIDE METAL)<br>**----- End of picture text -----**<br>


**K A** 

**Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified 

**==> picture [504 x 165] intentionally omitted <==**

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||||
|---|---|---|
|RHRG5060|UNIT|
|Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM|600|V|
|Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM|600|V|
|DC Blocking Voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR|600|V|
|Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV)|50|A|
|(TC = 93|[o]|C)|
|Repetitive Peak Surge Current  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM|100|A|
|(Square Wave, 20|kHz)|
|Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM|500|A|
|(Halfwave, 1 Phase, 60|Hz)|
|Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD|150|W|
|Avalanche Energy (See Figures 10 and 11)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL|40|mJ|
|Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ|-65 to 175|oC|

**----- End of picture text -----**<br>


©2001 Fairchild Semiconductor Corporation RHRG 5 060 Rev. C1 

www.fairchildsemi.com 

**1** 

_**RHRG5060**_ 

**Electrical Specificatio s** TC = 25[o] C, Unless Otherwise Specified **SYMBOL TEST CONDITION MIN TYP MAX UNIT** ts VF IF = 50 A - - 2.1 V IF = 50 A, TC = 150[o] C - - 1.7 V ~~_————————ee~~ ee sn IR VR = 600 V - - 250 µA VR = 600 V, TC = 150[o] C - - 1.5 mA ~~ee~~ eeee sn t rr IF = 1 A, dIF/dt = 100 A/µs - - 45 ns IF = 50 A, dIF/dt = 100 A/µs - - 50 ns ————————ee ta IF = 50 A, dIF/dt = 100 A/µs - 25 - ns es ee tb IF = 50 A, dIF/dt = 100 A/µs - 20 - ns es rs ts I Q rr IF = 50 A, dIF/dt = 100 A/µs - 65 - nC es rs ttn I CJ VR = 10 V, IF = 0 A - 140 - pF es rsttsttn RsI RθJC - - 1.0 oC/W OTES |SC]We DEFINITIONS 

- VF = Instantaneous forward voltage (pw = 300 µs, D = 2%). 

- IR = Instantaneous reverse current. 

- T rr = Reverse recovery time (See Figure 9), summation of ta + tb. 

- ta = Time to reach peak reverse current (See Figure 9). 

- tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). 

- Q rr = Reverse recovery charge. 

- CJ = Junction Capacitance. 

- RθJC = Thermal resistance junction to case. pw = pulse width. 

- D = Duty cycle. 

## _**Typical Performance Curves**_ 

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**----- Start of picture text -----**<br>
300 3000<br>175 [o] C<br>1000<br>100<br>SS ee 100 re ee ee eee eee<br>100 [o] C<br>10<br>175 [o] C 100 [o] C 25 [o] C<br>10 AA SS<br>1<br>25 [o] C<br>= a S 0.1<br>A = S S S<br>1 | AfFL | ft 0.01 _—a n e<br>0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 500 600<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>A)<br>µ<br>, FORWARD CURRENT (A) , REVERSE CURRENT (<br>IF IR<br>**----- End of picture text -----**<br>


**FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE** 

**FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE** 

©2001 Fairchild Semiconductor Corporation RHRG 5 060 Rev. C1 

www.fairchildsemi.com 

**2** 

_**RHRG5060**_ 

## _**Typical Performance Curves**_ **(Continued)** 

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**----- Start of picture text -----**<br>
150<br>60<br>TC = 25 [o] C, dIF/dt = 100A/ µ s TC = 100 [o] C, dIF/dt = 100A/ µ s<br>50 1 Se Trr 125 OO Trr<br>40 a 100 |<br>30 Serr 75 Lee<br>ta ta<br>50<br>20 PT | tb eee<br>tb<br>10 Sa 25 S S<br>0 TT 0 ee<br>1 10 50 1 10 50<br>IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A)<br>FIGURE 3. Trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. Trr, ta AND tb CURVES vs FORWARD CURRENT<br>250 50<br>TC = 175 [o] C, dIF/dt = 100A/ µ s<br>200 40<br>Pol Trr PTR ARNE<br>SQ. WAVE DC<br>150 30<br>fr | NA T<br>100 20<br>r ta e EE NO<br>50 a tb e TS 10 CEN<br>0 I 0<br>1 10 Tr 50 25 TEN 50 75 100 125 150 175<br>IF, FORWARD CURRENT (A) TC, CASE TEMPERATURE ( [o] C)<br>FIGURE 5. Trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE<br>350300 a<br>250 p| CT|<br>{|<br>200<br>15010050 aNO2 ee|<br>0 — | [| | |<br>0 50 100 150 200<br>VR, REVERSE VOLTAGE (V)<br>t, RECOVERY TIMES (ns)<br>t, RECOVERY TIMES (ns)<br>t, RECOVERY TIMES (ns)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>, JUNCTION CAPACITANCE (pF)<br>J<br>C<br>**----- End of picture text -----**<br>


**FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE** 

©2001 Fairchild Semiconductor Corporation RHRG 5 060 Rev. C1 

www.fairchildsemi.com 

**3** 

_**RHRG5060**_ 

## _**Test Circuits and Waveforms**_ 

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VGE AMPLITUDE AND<br>RG CONTROL dIF/dt L<br>t1 AND t2 CONTROL IF<br>RG DUT CURRENTSENSE + IF dIdtF ta Trr tb<br>VGE SI t1 U Ls IGBT - VDD 0 a =<br>0.25 IRM<br>> ! t2 \ <- -_= ly IRM<br>FIGURE 8. Trr TEST CIRCUIT FIGURE 9. Trr WAVEFORMS AND DEFINITIONS<br>IMAX = 1.4A<br>L = 40mH<br>R < 0.1 Ω<br>EAVL = 1/2LI [2]  [VR(AVL)/(VR(AVL) - VDD)] VAVL<br>Q1 = IGBT (BVCES > DUT VR(AVL)) L R<br>CURRENTSENSE +VDD i IL 7 7 VW \ \ IL<br>Q1 I V ma S<br>oN DUT -VDD Yo an<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT** 

**FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS** 

©2001 Fairchild Semiconductor Corporation RHRG 5 060 Rev. C1 

www.fairchildsemi.com 

**4** 

## **Mechanical Dimensions** 

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**----- Start of picture text -----**<br>
TO247-2L<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
RHRG5060 — Hyperfast Diode<br>**----- End of picture text -----**<br>


## **Figure 12. TO-247,Molded, 2LD, Jedec Option AB** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-002._ 

©2001 Fairchild Semiconductor Corporation RHRG5060  Rev. C1 

www.fairchildsemi.com 

**5** 

## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

AccuPower™ F-PFS™ Sync-Lock™ AX-CAP[®] * FRFET[®] ® ®* BitSiC™ Global Power Resource[SM] PowerTrench[®] E GENERALSYSTEM Build it Now™ GreenBridge™ PowerXS™ CorePLUS™ Green FPS™ Programmable Active Droop™ TinyBoost[®] CorePOWER™ Green FPS™ e-Series™ QFET[®] TinyBuck[®] _CROSSVOLT_ ™ G _max_ ™ QS™ TinyCalc™ CTL™ GTO™ Quiet Series™ TinyLogic[®] TINYOPTO™ Current Transfer Logic™ IntelliMAX™ RapidConfigure™ DEUXPEED[®] ISOPLANAR™ ™ TinyPower™ Dual Cool™ Marking Small Speakers Sound Louder TinyPWM™ EcoSPARK[®] and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT[®] * ® MicroFET™MicroPak™ SMART START™Solutions for Your Success™ SerDes™ Fairchild[®] MicroPak2™ SPM[®] Fairchild Semiconductor[®] MillerDrive™ STEALTH™ 74... FACT Quiet Series™ MotionMax™ SuperFET[®] UHC[®] FACT[®] mWSaver[®] SuperSOT™-3 Ultra FRFET™ FAST[®] OptoHiT™ SuperSOT™-6 UniFET™ FastvCore™ OPTOLOGIC[®] SuperSOT™-8 VCX™ FETBench™ OPTOPLANAR[®] SupreMOS[®] VisualMax™ FPS™ SyncFET™ VoltagePlus™ XS™ 

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used here in: 

1. Life support devices or systems are devices or systems which, (a) are 2. intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 

A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I66 

©2001 Fairchild Semiconductor Corporation RHRG5060  Rev. C1 

www.fairchildsemi.com 

**6**

Updated at February 9, 2023

onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.

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