# Power MOSFET, N Channel, 30 V, 3 A, 0.12 ohm, MPT, Surface Mount

![Product image](https://novapart.co/image/farnell:1525519/)

**URL**: https://novapart.co/products/RHP030N03T100/power-mosfet-n-channel-30-v-3-a-012-ohm-mpt
**SKU**: RHP030N03T100
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2070
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 500mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | MPT |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.12ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1525519/)

**4V Drive Nch MOSFET** 

Data Sheet 

## RHP030N03 

 **Structure** Silicon N-channel MOSFET 

##  **Features** 

1) Low On-resistance. 

2) 4V drive. 

 **Applications** Switching 

##  **Packaging specifications** 

|Type|Package|Taping|
|---|---|---|
||Code|T100|
||Basic ordering unit (pieces)|1000|
|RHP030N03||O|



##  **Dimensions** (Unit : mm) 

**==> picture [192 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
MPT3<br>SOT-89<br>/-— 1.64.5 1 1.5<br>— A<br>| | |<br>(1) pi) (2) (3) i<br>CT ] C<br>\I| au 0.4<br>0.4 0.5 0.4<br>1.5 1.5<br>(1)Gate 3.0<br>(2)Drain<br>(3)Source Abbreviated symbol : KZ<br>Inner circuit<br>(1) Gate<br>(2) Drain<br>| «2 (3) Source<br>0.5<br>2.5 4.0<br>1.0<br>**----- End of picture text -----**<br>


##  **Inner circuit** 

##  **Absolute maximum ratings** (Ta=25C) 

|**Absolute maximum ratings**(Ta=25C)|**Absolute maximum ratings**(Ta=25C)|(Ta=25C)C)C)||
|---|---|---|---|
|Parameter||Symbol|Limits|
|Drain-source voltage||VDSS|30|
|Gate-source voltage||VGSS|±20|
|Drain current|Continuous|ID|3|
||Pulsed|∗1<br>IDP|10|
|Reverse drain current|Continuous|IDR|3|
||Pulsed|∗1<br>IDRP|10|
|Total power dissipation||PD|500|
||||∗2<br>2|
|Channel temperature||Tch|150|
|Range of storage temperature||Tstg|−55 to+150|



- ∗ 1 Pw ≤ 10 μ s, Duty cycle ≤ 1% 

∗ 2 When mounted on a 40 × 40 × 0.7mm ceramic board 

##  **Thermal resistance** 

|**Thermal resistance**|||
|---|---|---|
|Parameter|Symbol|Limits|
|Channel to ambient|Rth(ch-a)|250|
|||62.5<br>∗|



∗ When mounted on a 40 × 40 × 0.7mm ceramic board 

www.rohm.com 

1/6 

○c 2014 ROHM Co., Ltd. All rights reserved. 

**2014.08 - Rev.B** 

Data Sheet 

**RHP030N03** 

##  **Electrical characteristics** (Ta=25C) 

|Parameter|Symbol|Symbol|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|---|---|
|Gate-source leakage|IGSS|||−|−|±10|μA|VGS=±20V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||30|−|−|V|ID= 1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||−|−|1|μA|VDS= 30V, VGS=0V|
|Gate threshold voltage|VGS (th)|||1.0|−|2.5|V|VDS= 10V, ID= 1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|90|120|mΩ|ID= 3A, VGS= 10V|
|||||−|160|210|mΩ|ID= 3A, VGS= 4V|
|Forward transfer admittance||Yfs|∗|2.0|−|−|S|VDS= 10V, ID= 3A|
|Input capacitance|Ciss|||−|160|−|pF|VDS= 10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|||−|90|−|pF||
|Reverse transfer capacitance|Crss|||−|27|−|pF||
|Turn-on delay time|td (on)<br>∗|||−|7|−|ns|VDD15V<br>ID= 1.5A<br>VGS= 10V<br>RL=10Ω<br>RG=10Ω|
|Rise time|tr<br>∗|||−|11|−|ns||
|Turn-off delay time|td (off)<br>∗|||−|15|−|ns||
|Fall time|tf<br>∗|||−|4.5|−|ns||
|Total gate charge|Qg<br>∗|||−|6.5|−|nC|VDD  15V<br>VGS= 10V<br>ID= 3A|
|Gate-sourcecharge|Qgs<br>∗|||−|1.0|−|nC||
|Gate-draincharge|Qgd<br>∗|||−|1.5|−|nC||



∗ Pulsed 

www.rohm.com ○c 2014 ROHM Co., Ltd. All rights reserved. 

2/3 

**2014.08 - Rev.B** 

Data Sheet 

**RHP030N03** 

##  **Electrical characteristics curves** 

**==> picture [140 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 Ta=25 ° C<br>f=1MHz<br>V GS =0V<br>Ciss<br>100<br>Coss<br>Crss<br>10<br>1<br>0.01 0.1 1 10 100<br>DRAIN-SOURCE VOLTAGE : VDS (V)<br>CAPACITANCE : C (pF)<br>**----- End of picture text -----**<br>


**==> picture [139 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 Ta=25 ° C<br>VDD= 15V<br>VGS= 10V<br>RG=10 Ω<br>Pulsed<br>100<br>tf<br>td (off)<br>10<br>td (on)<br>tr<br>1<br>0.01 0.1 1 10<br>DRAIN CURRENT : ID (A)<br>SWITCHING TIME : t (ns)<br>**----- End of picture text -----**<br>


**==> picture [120 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.1  Typical Capacitance<br>                  vs. Drain-Source Voltage<br>**----- End of picture text -----**<br>


Fig.2  Switching Characteristics 

**==> picture [131 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>VGS = 0V<br>Pulsed<br>1<br>Ta = 125 ° C<br>Ta = 75 ° C<br>Ta = 25 ° C<br>0.1 Ta = − 25 ° C<br>0.01<br>0.001<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>SOURCE-DRAIN VOLTAGE : VSD (V)<br> (A)<br>DR<br>REVERSE DRAIN CURRENT : I<br>**----- End of picture text -----**<br>


**==> picture [139 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.5<br>Ta = 25 ° C<br>Pulsed<br>0.4<br>ID = 3.0A<br>0.3<br>1.5A<br>0.2<br>0.1<br>0<br>0 2 4 6 8 10 12 14<br>GATE-SOURCE VOLTAGE : VGS (V)<br>) Ω<br> (<br>DS (on)<br>R<br>STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :<br>**----- End of picture text -----**<br>


Fig.5 Reverse Drain Current vs. Source-Drain Voltage (  ) 

Fig.4 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 

**==> picture [327 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 1<br>VGS = 4V VGS = 10V<br>Pulsed Pulsed<br>Ta = 125 ° C<br>Ta = 75 ° C<br>Ta = 25 ° C<br>Ta = − 25 ° C<br>0.1 0.1<br>Ta = 125 ° C<br>Ta = 75 ° C<br>Ta = 25 ° C<br>Ta = − 25 ° C<br>0.01 0.01<br>0.01 0.1 1 10 0.01 0.1 1 10<br>DRAIN  CURRENT : ID (A) DRAIN  CURRENT : ID (A)<br>) Ω ) Ω<br> (  (<br>DS (on) DS (on)<br>R R<br>STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :  STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :<br>**----- End of picture text -----**<br>


**==> picture [95 x 27] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.8 Static Drain-Source<br>On-State Resistance<br>vs. Drain Current (  ΙΙ  )<br>**----- End of picture text -----**<br>


**==> picture [93 x 27] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.7 Static Drain-Source<br>On-State Resistance<br>vs. Drain Current (  Ι  )<br>**----- End of picture text -----**<br>


**==> picture [140 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>VDS=10V<br>Pulsed<br>Ta=125 ° C<br>75 ° C<br>1 25 ° C<br>− 25 ° C<br>0.1<br>0.01<br>0 0.5 1 1.5 2 2.5 3 3.5<br>GATE-SOURCE VOLTAGE : VGS (V)<br> (A)<br>D<br>DRAIN CURRENT : I<br>**----- End of picture text -----**<br>


Fig.3  Typical Transfer Characteristics 

**==> picture [129 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Ta = 25 ° C<br>Pulsed<br>1<br>VGS=10V<br>0.1<br>0V<br>0.01<br>0.001<br>0 0.2 0.4 0.6 0.8 1 1.2<br>SOURCE-DRAIN VOLTAGE : VSD (V)<br> (A)<br>DR<br>REVERSE DRAIN CURRENT : I<br>**----- End of picture text -----**<br>


Fig.6 Reverse Drain Current vs. Source-Drain Voltage (  ) 

**==> picture [138 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.5<br>VSD = 10V<br>ID=1mA<br>Pulsed<br>2<br>1.5<br>1<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>CHANNEL TEMPERATURE : Tch ( ° C)<br>Fig.9 Gate Threshold Voltage vs.<br>         Channel Temperature<br> (V)<br> (th)<br>GS<br>GATE THRESHOLD VOLTAGE : V<br>**----- End of picture text -----**<br>


www.rohm.com 

3/3 

○c 2014 ROHM Co., Ltd. All rights reserved. 

**2014.08 - Rev.B** 

Notice 

- **N o t e s** 

- 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 

- 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 

- 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

- 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 

- 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 

- 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 

- 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 

- 10) ROHM shall have no responsibility for any damages or injury arising  from non-compliance with the recommended usage conditions and specifications contained herein. 

- 11) ROHM has used reasonable care to ensur  the accuracy of the information contained  in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 

- 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have  no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 

- 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 

- 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 

**==> picture [80 x 61] intentionally omitted <==**

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

## ROHM  Customer Support System 

http://www.rohm.com/contact/ 

www.rohm.com © 2014  ROHM Co., Ltd. All rights reserved. 

R1102A 



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