# IGBT, 40 A, 1.5 V, 136 W, 650 V, TO-247N, 3 Pins

![Product image](https://novapart.co/image/farnell:3757540/)

**URL**: https://novapart.co/products/RGW40TS65DGC11/igbt-40-a-15-v-136-w-650-to-247n-3-pins
**SKU**: RGW40TS65DGC11
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.2900
**Stock**: 25+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | Trench |
| Power Dissipation | 136W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247N |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3757540/)

RGW40TS65DGC13 **650V 20A Field Stop Trench IGBT** 

Datasheet 

## l **Outline** 

**==> picture [210 x 97] intentionally omitted <==**

## l **Features** 

1) Low Collector - Emitter Saturation Voltage 

2) High Speed Switching 

3) Low Switching Loss & Soft Switching 

4) Built in Very Fast & Soft Recovery FRD 

5) Pb - free Lead Plating ; RoHS Compliant 

## l **Application** 

PFC 

UPS 

Welding 

Solar Inverter IH 

**==> picture [139 x 78] intentionally omitted <==**

**----- Start of picture text -----**<br>
 TO-247GE<br>(1) (2)(3)<br>**----- End of picture text -----**<br>


## l **Inner Circuit** 

**==> picture [202 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
(2)<br>(1) Gate<br>*1 (2) Collector<br>(3) Emitter<br>(1)<br>*1 Built in FRD<br>(3)<br>**----- End of picture text -----**<br>


## l **Packaging Specifications** 

|Type|Packaging|Tube|
|---|---|---|
||Reel Size (mm)|-|
||Tape Width (mm)|-|
||Basic Ordering Unit (pcs)|600|
||Packing Code|C13|
||Marking|RGW40TS65D|



l **Absolute Maximum Ratings** (at TC = 25°C unless otherwise specified) 

|l**Absolute Maximum Ratingsgss**(at TC = 25°C unless otherwise specified)C = 25°C unless otherwise specified)= 25°C unless otherwise specified)|l**Absolute Maximum Ratingsgss**(at TC = 25°C unless otherwise specified)C = 25°C unless otherwise specified)= 25°C unless otherwise specified)|(at TC = 25°C unless otherwise specified)C = 25°C unless otherwise specified)= 25°C unless otherwise specified)pecified)ecified)|||
|---|---|---|---|---|
|Parameter||Symbol<br>~~re~~|Value<br>~~re~~|Unit|
|Collector - Emitter Voltage||VCES<br>~~a~~|650<br>~~a~~|V|
|Gate - Emitter Voltage||VGES<br>~~a~~|±30<br>~~a~~|V|
|Collector Current|TC= 25°C<br>~~ee~~|IC<br>~~ee~~<br>~~ee~~|40<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
||TC= 100°C<br>~~ee~~|IC<br>~~ee~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|Pulsed Collector Current||ICP<br>*1<br>~~ee~~<br>~~a~~<br>~~ee~~|80<br>~~ee~~<br>~~a~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|Diode Forward Current|TC= 25°C<br>~~ee~~|IF<br>~~ee~~<br>~~ee~~<br>~~ee~~|40<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
||TC= 100°C<br>~~es~~|IF<br>~~ee~~<br>~~es~~<br>~~ee~~|20<br>~~ee~~<br>~~es~~<br>~~ee~~|A<br>~~ee~~|
|Diode Pulsed Forward Current||IFP<br>*1<br>~~ee ~~<br>~~ee~~<br>~~ee~~|80<br> ~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|Power Dissipation|TC= 25°C<br>~~ee~~|PD<br>~~ee~~<br>~~ee~~<br>~~ee~~|136<br>~~ee~~<br>~~ee~~<br>~~ee~~|W<br>~~ee~~|
||TC= 100°C<br>~~es~~|PD<br>~~ee~~<br>~~es~~<br>~~ee~~|68<br>~~ee~~<br>~~es~~<br>~~ee~~|W<br>~~ee~~|
|Operating Junction Temperature||Tj<br>~~ee ~~<br>~~ee~~|-40 to +175<br> ~~ee~~<br>~~ee~~|°C|
|Storage Temperature||Tstg<br>~~a~~|-55 to +175<br>~~a~~|°C|



*1 Pulse width limited by Tjmax. 

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**2022.12 -  Rev.A** 

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**RGW40TS65DGC13** 

Datasheet 

## l **Thermal Resistance** 

|l**Thermal Resistance**||||||
|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|
|||Min.|Typ.|Max.||
|Thermal Resistance IGBT Junction - Case|Rθ(j-c)|-|-|1.10|C/W|
|Thermal Resistance Diode Junction - Case|Rθ(j-c)|-|-|1.62|C/W|



## l **IGBT Electrical Characteristics** (at Tj = 25°C unless otherwise specified) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Collector - Emitter Breakdown<br>Voltage|BVCES|IC= 10μA, VGE= 0V|650|-|-|V|
|Collector Cut - off Current|ICES|VCE= 650V, VGE= 0V|-|-|10|μA|
|Gate - Emitter Leakage<br>Current|IGES|VGE= ±30V, VCE= 0V|-|-|±200|nA|
|Gate - Emitter Threshold<br>Voltage|VGE(th)|VCE= 5V, IC= 13.3mA|5.0|6.0|7.0|V|
|Collector - Emitter Saturation<br>Voltage|VCE(sat)|Tj= 175°C<br>IC= 20A, VGE= 15V,<br>Tj= 25°C|-<br>-|1.85<br>1.5|1.9<br>-|V|



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**2022.12 -  Rev.A** 

2/11 

**RGW40TS65DGC13** 

Datasheet 

l **IGBT Electrical Characteristics** (at Tj = 25°C unless otherwise specified) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Input Capacitance|Cies|VGE= 0V,<br>f = 1MHz<br>VCE= 30V,|-|1680|-|pF|
|Output Capacitance|Coes||-|47|-||
|Reverse transfer Capacitance|Cres||-|31|-||
|Total Gate Charge|Qg|VCE= 400V,<br>IC= 20A,<br>VGE= 15V|-|59|-|nC|
|Gate - Emitter Charge|Qge||-|13|-||
|Gate - Collector Charge|Qgc||-|23|-||
|Turn - on Delay Time|td(on)|IC= 20A, VCC= 400V,<br>VGE= 15V, RG= 10Ω,<br>Tj= 25°C<br>Inductive Load<br>*Eoninclude diode<br>reverse recovery|-|33|-|ns|
|Rise Time|tr||-|10|-||
|Turn - off Delay Time|td(off)||-|76|-||
|Fall Time|tf||-|63|-||
|Turn - on Switching Loss|Eon||-|0.33|-|mJ|
|Turn - off Switching Loss|Eoff||-|0.30|-||
|Turn - on Delay Time|td(on)|IC= 20A, VCC= 400V,<br>VGE= 15V, RG= 10Ω,<br>Tj= 175°C<br>Inductive Load<br>*Eoninclude diode<br>reverse recovery|-|31|-|ns|
|Rise Time|tr||-|10|-||
|Turn - off Delay Time|td(off)||-|102|-||
|Fall Time|tf||-|76|-||
|Turn - on Switching Loss|Eon||-|0.34|-|mJ|
|Turn - off Switching Loss|Eoff||-|0.43|-||
|Reverse Bias Safe Operating<br>Area|RBSOA|IC= 80A, VCC= 520V,<br>VP= 650V, VGE= 15V,<br>RG= 100Ω, Tj= 175℃|FULL SQUARE|||-|



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**2022.12 -  Rev.A** 

3/11 

**RGW40TS65DGC13** 

Datasheet 

## l **FRD Electrical Characteristics** (at Tj = 25°C unless otherwise specified) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Diode Forward Voltage|VF|Tj= 25°C<br>Tj= 175°C<br>IF= 20A,|-<br>-|1.45<br>1.55|1.9<br>-|V|
|Diode Reverse Recovery<br>Time|trr|IF= 20A,<br>VCC= 400V,<br>diF/dt = 200A/μs,<br>Tj= 25°C|-|92|-|ns|
|Diode Peak Reverse<br>Recovery Current|Irr||-|6.7|-|A|
|Diode Reverse Recovery<br>Charge|Qrr||-|0.34|-|μC|
|Diode Reverse Recovery<br>Energy|Err||-|14.1|-|μJ|
|Diode Reverse Recovery<br>Time|trr|IF= 20A,<br>VCC= 400V,<br>diF/dt = 200A/μs,<br>Tj= 175°C|-|123|-|ns|
|Diode Peak Reverse<br>Recovery Current|Irr||-|7.8|-|A|
|Diode Reverse Recovery<br>Charge|Qrr||-|0.59|-|μC|
|Diode Reverse Recovery<br>Energy|Err||-|30.7|-|μJ|



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**2022.12 -  Rev.A** 

4/11 

**RGW40TS65DGC13** 

Datasheet 

## l **Electrical Characteristic Curves** 

Fig.1 Power Dissipation vs. Case Temperature 

**==> picture [219 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>Case Temperature : TC [°C ]<br> [W]<br>D<br>Power Dissipation : P<br>**----- End of picture text -----**<br>


Fig.3 Forward Bias Safe Operating Area 

**==> picture [225 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>1μs<br>100<br>10μs<br>10<br>100μs<br>1<br>0.1<br>TC = 25ºC<br>Single Pulse<br>0.01<br>1 10 100 1000<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


## Fig.2 Collector Current 

vs. Case Temperature 

**==> picture [221 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>40<br>30<br>20<br>10<br>Tj ≤ 175ºC<br>VGE ≥ 15V<br>0<br>0 25 50 75 100 125 150 175<br>Case Temperature : TC [°C ]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


Fig.4 Reverse Bias Safe Operating Area 

**==> picture [218 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>80<br>60<br>40<br>20<br>Tj ≤ 175ºC<br>VGE = 15V<br>0<br>0 200 400 600 800<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


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**2022.12 -  Rev.A** 

5/11 

**RGW40TS65DGC13** 

Datasheet 

## l **Electrical Characteristic Curves** 

## Fig.5 Typical Output Characteristics 

**==> picture [213 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>Tｊ = 25ºC<br>VGE = 20V<br>60<br>VGE = 15V VGE = 12V<br>VGE = 10V<br>40<br>20<br>VGE = 8V<br>0<br>0 1 2 3 4 5<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


## Fig.6 Typical Output Characteristics 

**==> picture [215 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>Tｊ = 175ºC<br>VGE = 20V<br>60<br>VGE = 15V<br>VGE = 12V<br>40<br>VGE = 10V<br>20 VGE = 8V<br>0<br>0 1 2 3 4 5<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


Fig.7 Typical Transfer Characteristics 

Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 

**==> picture [465 x 221] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 4<br>VCE = 10V VGE = 15V<br>30 3<br>IC = 40A<br>20 2 IC = 20A<br>10 1 IC = 10A<br>Tj = 175ºC<br>Tj = 25ºC<br>0 0<br>0 2 4 6 8 10 12 25 50 75 100 125 150 175<br>Gate To Emitter Voltage : VGE [V] Junction Temperature : Tj [°C ]<br> [A]<br>C<br> [V]<br>CE(sat)<br>Voltage : V<br>Collector Current : I<br>Collector To Emitter Saturation<br>**----- End of picture text -----**<br>


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**2022.12 -  Rev.A** 

6/11 

**RGW40TS65DGC13** 

Datasheet 

## l **Electrical Characteristic Curves** 

**==> picture [475 x 557] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.9 Typical Collector to Emitter Saturation Fig.10 Typical Collector to Emitter Saturation<br>      Voltage vs. Gate to Emitter Voltage         Voltage vs. Gate to Emitter Voltage<br>20 20<br>Tj = 25ºC Tj = 175ºC<br>IC = 40A<br>15 IC = 20A 15 IC = 40A<br>IC = 10A IC = 20A<br>10 10 IC = 10A<br>5 5<br>0 0<br>5 10 15 20 5 10 15 20<br>Gate To Emitter Voltage : VGE [V] Gate To Emitter Voltage : VGE [V]<br>Fig.11 Typical Switching Time Fig.12 Typical Switching Time<br>            vs. Collector Current             vs. Gate Resistance<br>1000 1000<br>td(off) td(off)<br>100 100<br>tf tf<br>t<br>d(on) t<br>d(on)<br>10 10<br>tr<br>tr VCC = 400V, VGE = 15V, VCC = 400V, VGE = 15V,<br>RG = 10Ω, Tj = 175ºC IC = 20A, Tj = 175ºC<br>Inductive load Inductive load<br>1 1<br>0 10 20 30 40 0 10 20 30 40 50<br>Collecter Current : IC [A] Gate Resistance : RG [Ω]<br> [V]  [V]<br>CE(sat) CE(sat)<br>Voltage : V Voltage : V<br>Collector To Emitter Saturation Collector To Emitter Saturation<br>Switching Time [ns] Switching Time [ns]<br>**----- End of picture text -----**<br>


Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 

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**2022.12 -  Rev.A** 

7/11 

**RGW40TS65DGC13** 

Datasheet 

## l **Electrical Characteristic Curves** 

Fig.13 Typical Switching Energy Losses vs. Collector Current 

**==> picture [217 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>1<br>Eoff<br>0.1<br>Eon VCC = 400V, VGE = 15V,<br>RG = 10Ω, Tj = 175ºC<br>Inductive load<br>0.01<br>0 10 20 30 40<br>Collecter Current : IC [A]<br>Switching Energy Losses [mJ]<br>**----- End of picture text -----**<br>


- Fig.14 Typocal Switching Energy Losses vs. Gate Resistance 

**==> picture [218 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>1<br>Eoff<br>Eon<br>0.1<br>VCC = 400V, IC = 20A,<br>VGE = 15V, Tj = 175ºC<br>Inductive load<br>0.01<br>0 10 20 30 40 50<br>Gate Resistance : RG [Ω]<br>Switching Energy Losses [mJ]<br>**----- End of picture text -----**<br>


- Fig.15 Typical Capacitance vs. Collector to Emitter Voltage 

Fig.16 Typical Gate Charge 

**==> picture [461 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 15<br>Cies<br>1000<br>10<br>100 Coes<br>5<br>10<br>f = 1MHz Cres VCC = 400V<br>VGE = 0V IC = 20A<br>T = 25ºC T = 25ºC<br>j  j<br>1 0<br>0.01 0.1 1 10 100 0 10 20 30 40 50 60<br>Collector To Emitter Voltage : VCE [V] Gate Charge : Qg [nC]<br> [V]<br>GE<br>Capacitance [pF]<br>Gate To Emitter  Voltage : V<br>**----- End of picture text -----**<br>


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**2022.12 -  Rev.A** 

8/11 

**RGW40TS65DGC13** 

Datasheet 

## l **Electrical Characteristic Curves** 

Fig.17 Typical Diode Forward Current vs. Forward Voltage 

**==> picture [216 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>60<br>40<br>Tj = 25ºC<br>20 Tj = 175ºC<br>0<br>0 0.5 1 1.5 2 2.5 3<br>Forward Voltage : VF [V]<br> [A]<br>F<br>Forward Current : I<br>**----- End of picture text -----**<br>


**==> picture [219 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.19 Typical Diode Reverse Recovery<br>            Current vs. Forward Current<br>15<br>10<br>Tj = 175ºC<br>5<br>Tj = 25ºC<br>VCC = 400V<br>diF/dt = 200A/μs<br>Inductive load<br>0<br>0 10 20 30 40<br>Forward Current : IF [A]<br>  [A]<br>rr<br>Reverse Recovery Current : I<br>**----- End of picture text -----**<br>


Fig.18 Typical Diode Revese Recovery Time vs. Forward Current 

**==> picture [219 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>180<br>160<br>140 Tj = 175ºC<br>120<br>100<br>80<br>Tj = 25ºC<br>60<br>40<br>VCC = 400V<br>20 diF/dt = 200A/μs<br>Inductive load<br>0<br>0 10 20 30 40<br>Forward Current : IF [A]<br> [ns]<br>rr<br>Reverse Recovery Time : t<br>**----- End of picture text -----**<br>


Fig.20 Typical Diode Rrverse Recovery Charge vs. Forward Current 

**==> picture [218 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.5<br>1<br>Tj = 175ºC<br>0.5<br>VCC = 400V<br>diF/dt = 200A/μs<br>Tj = 25ºC Inductive load<br>0<br>0 10 20 30 40<br>Forward Current : IF [A]<br>  [μC]<br>rr<br>Reverse Recovery Charge : Q<br>**----- End of picture text -----**<br>


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**2022.12 -  Rev.A** 

9/11 

**RGW40TS65DGC13** 

Datasheet 

## l **Electrical Characteristic Curves** 

## Fig.21 Typical IGBT Transient Thermal Impedance 

**==> picture [470 x 526] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.5<br>0.2<br>SS N a<br>0.1<br>0.1<br>=a<br>PDM<br>0.01 Single Pulse t1<br>0.01 t2<br>Duty = t1/t2<br>0.02 Peak Tj = PDM×Zθ(j-c)+TC<br>0.05 C1 C2 C3 R1 R2 R3<br>486.2u 1.764m 19.30m 553.0m 115.0m 7.752m<br>0.001<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Pulse Width : t1 [s]<br>Fig.22 Typical Diode Transient Thermal Impedance<br>1<br>D = 0.5<br>Seae<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02 PDM<br>0.01 0.01 t1<br>t2<br>Single Pulse Duty = t1/t2<br>Peak Tj = PDM×Zθ(j-c)+TC<br>C1 C2 C3 R1 R2 R3<br>65.51u 373.7u 1.268m 200.5m 341.9m 457.6m<br>0.001<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Pulse Width : t1 [s]<br> [°C/W]<br>θ(j-c)<br>: Z<br>Transient Thermal Impedance<br> [°C/W]<br>θ(j-c)<br>: Z<br>Transient Thermal Impedance<br>**----- End of picture text -----**<br>


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**2022.12 -  Rev.A** 

10/11 

**RGW40TS65DGC13** 

Datasheet 

## ● **Inductive Load Switching Circuit and Waveform** 

**==> picture [484 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
Gate Drive Time<br>90%<br>D.U.T.<br>D.U.T. VGE<br>10%<br>VG 90%<br>I<br>C<br>Fig.23 Inductive Load Circuit 10%<br>td(on) tr td(off)<br>tf<br>IF trr , Qrr ton toff<br>diF/dt VCE<br>10%<br>Irr<br>V<br>CE(sat)<br>Eon Eoff<br>Fig.25 Diode Reverse Recovery Waveform Fig.24 Inductive Load Waveform<br>**----- End of picture text -----**<br>


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**2022.12 -  Rev.A** 

11/11 

Notice 

- **N o t e s** 

- 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 

- 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 

- 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

- 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 

- 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 

- 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 

- 9) ROHM shall have no responsibility for any damages or injury arising  from non-compliance with the recommended usage conditions and specifications contained herein. 

- 10) ROHM has used reasonable care to ensure the accuracy of the information contained  in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 

- 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have  no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 

- 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 

- 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 

**==> picture [80 x 61] intentionally omitted <==**

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R1107 S 

Datasheet 

## **General Precaution** 

1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 

2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 

3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this  document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information. 

**Rev.001** 

> **[Notice – WE ]** © 2015 ROHM Co., Ltd. All rights reserved. 



## Links

- [View this product on Novapart](https://novapart.co/products/RGW40TS65DGC11/igbt-40-a-15-v-136-w-650-to-247n-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/rohm/rgw40ts65dgc11/transistor-igbt-650v-40a-136w/dp/3757540)
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