# IGBT, 30 A, 1.7 V, 267 W, 1.2 kV, TO-247N, 3 Pins

![Product image](https://novapart.co/image/farnell:3580047/)

**URL**: https://novapart.co/products/RGS30TSX2HRC11/igbt-30-a-17-v-267-w-12-kv-to-247n-3-pins
**SKU**: RGS30TSX2HRC11
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.9500
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 267W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247N |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3580047/)

RGS30TSX2HR **1200V 15A Field Stop Trench IGBT** 

Datasheet 

## l **Outline** 

**==> picture [215 x 93] intentionally omitted <==**

## l **Features** 

1) Low Collector - Emitter Saturation Voltage 

2) Short Circuit Withstand Time 10μs 

3) Qualified to AEC-Q101 

TO-247N (1) (2)(3) 

## l **Inner Circuit** 

**==> picture [198 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
(2)<br>(1) Gate<br>(2) Collector<br>(3) Emitter<br>(1)<br>(3)<br>**----- End of picture text -----**<br>


4) Pb - free Lead Plating ; RoHS Compliant 

## l **Packaging Specifications** 

## l **Application** 

Heater for Automotive 

|Type|Packaging|Tube|
|---|---|---|
||Reel Size (mm)|-|
||Tape Width (mm)|-|
||Basic Ordering Unit (pcs)|450|
||Packing Code|C11|
||Marking|RGS30TSX2|



l **Absolute Maximum Ratings** (at TC = 25°C unless otherwise specified) 

|l**Absolute Maximum Ratingsgss**(at TC = 25°C unless otherwise specified)C = 25°C unless otherwise specified)= 25°C unless otherwise specified)|l**Absolute Maximum Ratingsgss**(at TC = 25°C unless otherwise specified)C = 25°C unless otherwise specified)= 25°C unless otherwise specified)|(at TC = 25°C unless otherwise specified)C = 25°C unless otherwise specified)= 25°C unless otherwise specified)pecified)ecified)|||
|---|---|---|---|---|
|Parameter||Symbol<br>~~a~~|Value<br>~~a~~|Unit|
|Collector - Emitter Voltage||VCES<br>~~a~~|1200<br>~~a~~|V|
|Gate - Emitter Voltage||VGES<br>~~rr~~|±30<br>~~rr~~|V|
|Collector Current|TC= 25°C<br>~~rr~~<br>~~rr~~|IC<br>~~rr~~<br>~~**ee**~~<br>|30<br>~~rr~~<br>|A|
||TC= 100°C<br>~~rr~~|IC<br>~~**ee**~~<br>|15<br>|A|
|Pulsed Collector Current<br>~~rr rr~~||ICP<br>*1<br>~~**ee**~~<br>~~rr~~<br>~~ee~~|45<br>~~rr~~<br>~~ee~~|A|
|Power Dissipation|TC= 25°C<br>~~rr~~|PD<br>~~rr~~<br>~~ee~~<br>~~ee~~|267<br>~~rr~~<br>~~ee~~<br>~~ee~~|W|
||TC= 100°C<br>~~rr~~|PD<br>~~ee~~<br>~~rr~~<br>~~ee~~|133<br>~~ee~~<br>~~rr~~<br>~~ee~~|W|
|Operating Junction Temperature||Tj<br>~~ee~~<br>~~rr~~|-40 to +175<br>~~ee~~<br>~~rr~~|°C|
|Storage Temperature||Tstg<br>~~rr~~|-55 to +175<br>~~rr~~|°C|



*1 Pulse width limited by Tjmax. 

www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 

**2020.06 -  Rev.A** 

1/9 

**RGS30TSX2HR** 

Datasheet 

|l**Thermal Resistance**|l**Thermal Resistance**|||||
|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|
|||Min.|Typ.|Max.||
|Thermal Resistance IGBT Junction - Case|Rθ(j-c)|-|-|0.56|C/W|



## l **IGBT Electrical Characteristics** (at Tj = 25°C unless otherwise specified) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Collector - Emitter Breakdown<br>Voltage|BVCES|IC= 10μA, VGE= 0V|1200|-|-|V|
|Collector Cut - off Current|ICES|VCE= 1200V, VGE= 0V<br>Tj= 25℃<br>Tj= 175℃*2|-<br>-|1<br>-|-<br>10|mA<br>μA|
|Gate - Emitter Leakage<br>Current|IGES|VGE= ±30V, VCE= 0V|-|-|±500|nA|
|Gate - Emitter Threshold<br>Voltage|VGE(th)|VCE= 5V, IC= 2.3mA|5.0|6.0|7.0|V|
|Collector - Emitter Saturation<br>Voltage|VCE(sat)|Tj= 175°C<br>IC= 15A, VGE= 15V<br> Tj= 25°C|-<br>-|2.20<br>1.70|-<br>2.10|V<br>V|



www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 

**2020.06 -  Rev.A** 

2/9 

**RGS30TSX2HR** 

Datasheet 

l **IGBT Electrical Characteristics** (at Tj = 25°C unless otherwise specified) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Input Capacitance|Cies|VGE= 0V<br>f = 1MHz<br>VCE= 30V|-|1272|-|pF|
|Output Capacitance|Coes||-|66|-||
|Reverse transfer Capacitance|Cres||-|7.6|-||
|Total Gate Charge|Qg|VCE= 500V<br>IC= 15A<br>VGE= 15V|-|41|-|nC|
|Gate - Emitter Charge|Qge||-|11|-||
|Gate - Collector Charge|Qgc||-|17|-||
|Turn - on Delay Time|td(on)|IC= 15A, VCC= 600V,<br>VGE= 15V, RG= 10Ω,<br>Tj= 25°C<br>Inductive Load<br>*Eoninclude diode<br>reverse recovery|-|30|-|ns|
|Rise Time|tr||-|8.5|-||
|Turn - off Delay Time|td(off)||-|70|-||
|Fall Time|tf||-|128|-||
|Turn-on Switching Loss|Eon||-|0.74|-|mJ|
|Turn-off Switching Loss|Eoff||-|0.6|-||
|Turn - on Delay Time|td(on)|IC= 15A, VCC= 600V,<br>VGE= 15V, RG= 10Ω,<br>Tj= 175°C<br>Inductive Load<br>*Eoninclude diode<br>reverse recovery|-|29|-|ns|
|Rise Time|tr||-|10|-||
|Turn - off Delay Time|td(off)||-|69|-||
|Fall Time|tf||-|120|-||
|Turn-on Switching Loss|Eon||-|0.81|-|mJ|
|Turn-off Switching Loss|Eoff||-|0.65|-||
|Reverse Bias<br>Safe Operating Area|RBSOA|IC= 45A, VCC= 1050V<br>Vp= 1200V, VGE= 15V<br>RG= 50Ω, Tj= 175°C|FULL SQUARE|||-|
|Short Circuit Withstand Time|tsc|VCC ≤600V<br>VGE= 15V, Tj= 25°C|10|-|-|μs|
|Short Circuit Withstand Time|tsc<br>*2|VCC ≤600V<br>VGE= 15V, Tj= 150°C|8|-|-|μs|



*2 Design assurance without measurement 

www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 

**2020.06 -  Rev.A** 

3/9 

**RGS30TSX2HR** 

Datasheet 

## l **Electrical Characteristic Curves** 

**==> picture [219 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.1 Power Dissipation<br>          vs. Case Temperature<br>400<br>300<br>200<br>100<br>0<br>0 25 50 75 100 125 150 175<br>Case Temperature : TC [°C ]<br> [W]<br>D<br>Power Dissipation : P<br>**----- End of picture text -----**<br>


Fig.3 Forward Bias Safe Operating Area 

**==> picture [228 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>10μs<br>10<br>100μs<br>1<br>0.1<br>TC = 25ºC<br>Single Pulse<br>0.01<br>1 10 100 1000 10000<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


## Fig.2 Collector Current 

vs. Case Temperature 

**==> picture [221 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>30<br>20<br>10<br>Tj ≤ 175ºC<br>VGE ≥ 15V<br>0<br>0 25 50 75 100 125 150 175<br>Case Temperature : TC [°C ]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


Fig.4 Reverse Bias Safe Operating Area 

**==> picture [221 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>45<br>30<br>15<br>Tj ≤ 175ºC<br>VGE = 15V<br>0<br>0 300 600 900 1200 1500<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 

**2020.06 -  Rev.A** 

4/9 

**RGS30TSX2HR** 

Datasheet 

## l **Electrical Characteristic Curves** 

## Fig.5 Typical Output Characteristics 

**==> picture [213 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
45<br>Tｊ = 25ºC<br>40<br>35 VGE = 12V<br>30 VGE = 20V<br>25 VGE = 15V<br>20<br>15 VGE = 10V<br>10<br>5 VGE = 8V<br>0<br>0 1 2 3 4 5<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


Fig.6 Typical Output Characteristics 

**==> picture [215 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
45<br>Tｊ = 175ºC<br>40<br>35<br>30 VGE = 20V<br>25 VGE = 15V<br>20 VGE = 12V<br>VGE = 10V<br>15<br>10<br>5 VGE = 8V<br>0<br>0 1 2 3 4 5<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


Fig.7 Typical Transfer Characteristics 

Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 

**==> picture [465 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
45 4<br>40 VCE = 10V VGE = 15V IC = 30A<br>35<br>3<br>30 IC = 15A<br>25<br>2<br>20<br>15 IC = 7.5A<br>1<br>10<br>5 Tj = 175ºC Tj = 25ºC<br>0 0<br>0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 175<br>Gate To Emitter Voltage : VGE [V] Junction Temperature : Tj [°C ]<br> [A]<br>C<br> [V]<br>CE(sat)<br>Voltage : V<br>Collector Current : I<br>Collector To Emitter Saturation<br>**----- End of picture text -----**<br>


www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 

**2020.06 -  Rev.A** 

5/9 

**RGS30TSX2HR** 

Datasheet 

## l **Electrical Characteristic Curves** 

Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 

Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 

**==> picture [231 x 528] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Tj = 25ºC<br>8<br>IC = 30A<br>6 IC = 15A<br>IC = 7.5A<br>4<br>2<br>0<br>5 10 15 20<br>Gate To Emitter Voltage : VGE [V]<br>Fig.11 Typical Switching Time<br>            vs. Collector Current<br>1000<br>tf<br>100<br>t<br>d(off)<br>t<br>d(on)<br>10<br>tr<br>VCC = 600V, VGE = 15V,<br>RG = 10Ω, Tj = 175ºC<br>Inductive load<br>1<br>0 10 20 30<br>Collecter Current : IC [A]<br> [V]<br>CE(sat)<br>Voltage : V<br>Collector To Emitter Saturation<br>Switching Time [ns]<br>**----- End of picture text -----**<br>


**==> picture [230 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Tj = 175ºC<br>8<br>IC = 30A<br>6 IC = 15A<br>IC = 7.5A<br>4<br>2<br>0<br>5 10 15 20<br>Gate To Emitter Voltage : VGE [V]<br> [V]<br>CE(sat)<br>Voltage : V<br>Collector To Emitter Saturation<br>**----- End of picture text -----**<br>


**==> picture [218 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.12 Typical Switching Time<br>            vs. Gate Resistance<br>1000<br>100 tf<br>t<br>d(off)<br>ｔ<br>d(on)<br>10 tr<br>VCC = 600V, IC = 15A,<br>VGE = 15V, Tj = 175ºC<br>Inductive load<br>1<br>0 10 20 30 40 50<br>Gate Resistance : RG [Ω]<br>Switching Time [ns]<br>**----- End of picture text -----**<br>


www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 

**2020.06 -  Rev.A** 

6/9 

**RGS30TSX2HR** 

Datasheet 

## l **Electrical Characteristic Curves** 

Fig.13 Typical Switching Energy Losses vs. Collector Current 

**==> picture [217 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Eon<br>1<br>Eoff<br>0.1<br>VCC = 600V, VGE = 15V,<br>RG = 10Ω, Tj = 175ºC<br>Inductive load<br>0.01<br>0 10 20 30<br>Collector Current : IC [A]<br>Switching Energy Losses [mJ]<br>**----- End of picture text -----**<br>


Fig.14 Typical Switching Energy Losses vs. Gate Resistance 

**==> picture [217 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Eon<br>1<br>Eoff<br>0.1<br>VCC = 600V, VGE = 15V,<br>IC = 15A, Tj = 175ºC<br>Inductive load<br>0.01<br>0 10 20 30 40 50<br>Gate Resistance : RG [Ω]<br>Switching Energy Losses [mJ]<br>**----- End of picture text -----**<br>


Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 

Fig.16 Typical Gate Charge 

**==> picture [461 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 15<br>VCC = 300V<br>1000<br>Cies<br>10<br>VCC = 500V<br>100<br>5<br>10 Coes<br>f = 1MHz<br>TVGE = 25ºC= 0V Cres TIC j = 25ºC= 15A<br>j<br>1 0<br>0.01 0.1 1 10 100 0 15 30 45<br>Collector To Emitter Voltage : VCE [V] Gate Charge : QG [nC]<br> [V]<br>GE<br>Capacitance [pF]<br>Gate To Emitter  Voltage : V<br>**----- End of picture text -----**<br>


www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 

**2020.06 -  Rev.A** 

7/9 

**RGS30TSX2HR** 

Datasheet 

## l **Electrical Characteristic Curves** 

Fig.17 IGBT Transient Thermal Impedance 

**==> picture [484 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.5<br>0.1 0.2<br>n o<br>0.1<br>Single Pulse<br>Ze == sit SHe sESa Has<br>ze 0.01 RI R2 R3 PDM<br>0.02 ct c2 C3 t1<br>0.01 0.05 | pan t2 il<br>Duty = t1/t2<br>EEF Peak T TL) j = PDM×Zθ(j-c)+TC<br>a C1 C2 C3 R1 R2 R3<br>a 400.8u 2.510m 12.89m 81.52m 263.0m 215.5m<br>0.001<br>1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Pulse Width : t1 [s]<br> [°C/W]<br>θ(j-c)<br>: Z<br>Transient Thermal Impedance<br>**----- End of picture text -----**<br>


www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 

**2020.06 -  Rev.A** 

8/9 

**RGS30TSX2HR** 

Datasheet 

## ● **Inductive Load Switching Circuit and Waveform** 

**==> picture [484 x 416] intentionally omitted <==**

**----- Start of picture text -----**<br>
Gate Drive Time<br>D.U.T.<br>90%<br>V<br>VG GE<br>10%<br>Fig.18 Inductive Load Circuit<br>90%<br>I<br>C<br>10%<br>tf<br>t<br>t d(off)<br>d(on) tr<br>ton toff<br>V<br>CE<br>10%<br>V<br>CE(sat)<br>Eon Eoff<br>**----- End of picture text -----**<br>


Fig.19 Inductive Load Waveform 

www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 

**2020.06 -  Rev.A** 

9/9 



## Links

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- [Supplier page](https://es.farnell.com/rohm/rgs30tsx2hrc11/igbt-1-2kv-30a-267w-to-247n/dp/3580047)
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