# IGBT, 88 A, 1.65 V, 326 W, 650 V, TO-247N, 3 Pins

![Product image](https://novapart.co/image/farnell:2766353/)

**URL**: https://novapart.co/products/RGS00TS65EHRC11/igbt-88-a-165-v-326-w-650-to-247n-3-pins
**SKU**: RGS00TS65EHRC11
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €5.5100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 326W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247N |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 88A |
| Collector Emitter Voltage Max | 650V |
| Automotive Qualification Standard | AEC-Q101 |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2766353/)

## PRODUCTS TYPE PAGE ＩＧＢＴ ＲＧＳ００ＴＳ６５Ｅ １／４ ~~ROH~~ 

- １． PRODUCT       Insulated Gate Bipolar Transistor （ Silicon N-channel Enhancement Mode ） 

- ２． TYPE ＲＧＳ００ＴＳ６５Ｅ 

- ３． APPLICATION General Inverter for Automotive and Industrial Use 

- ４． FEATURE ・ 650V / 50A (RGS-series) 

   - ・ Low Collector-Emitter Saturation Voltage 

   - ・ Low Switching Loss 

   - ・ Short Circuit Withstand Time 8μs 

   - ・ Built in Very Fast & Soft Recovery FRD 

   - ・ Qualified to AEC-Q101 

**==> picture [517 x 563] intentionally omitted <==**

**----- Start of picture text -----**<br>
５． ABSOLUTE MAXIMUM RATINGS （ at TC=25℃ unless otherwise specified ）<br>Item  Symbol  Ratings  Units<br>Collector-Emitter Voltage  VCES 650  V<br>ee<br>Gate-Emitter Voltage  VGES ±30  V<br>a ee<br>TC=25 ℃ IC 88  A<br>Collector Current<br>TC=100 ℃ IC 50  A<br>eee<br>ee ee<br>ee ee<br>Pulsed Collector Current [*1] ICP 150  A<br>es<br>TC=25 ℃ IF 84  A<br>Diode Forward Current<br>TC=100 ℃ IF 50  A<br>ee<br>ee ee ee<br>ee ee eee ee<br>Diode Pulsed Forward Current [*1] IFP 150  A<br>ee<br>TC=25 ℃ PD 326  W<br>Power Dissipation<br>TC=100 ℃ PD 163  W<br>ee<br>ee ee<br>Operating Junction Temperature  ee ee Tj ee -40～+175  ee ℃<br>ee<br>Storage Temperature  Tstg -55～+175  ℃<br>a ee<br>                                                              *1) Pulse width limited by Tjmax.<br>６． MARKING AND CONNECTION<br>Marking Connection<br>② Collector<br>Type Name<br>ＲＧＳ００  Production Year Gate<br>ＴＳ６５Ｅ  Week and Day<br>Sirial Number  ①<br>| o-cs<br>③ Emitter<br>① ② ③<br>DESIGN  CHECK  APPROVAL<br>DATE：20/SEP./2016 SPECIFICATION No.：TSQ50404-RGS00TS65E<br>REV.：001<br>ns] =p] |co<br>TSZ22111･04･002  pet Pee pov<br>**----- End of picture text -----**<br>


PAGE ２／４ 

ＲＧＳ００ＴＳ６５Ｅ 

## PRODUCTS TYPE ＩＧＢＴ ~~Ronm~~ ７． THERMAL RESISTANCE ~~|~~ 

|~~Ronm|~~|PRODUCTS<br>ＩＧＢＴ<br>~~|~~|TYPE<br>ＲＧＳ００ＴＳ６５Ｅ|PAGE<br>２／４|
|---|---|---|---|
|７． THERMAL RESISTANCE<br>Item<br>Symbol<br>Min.<br>Typ.<br>Max.<br>Units<br>Thermal Resistance IGBT Junction-Case<br>Rθ(j-c)<br>－<br>－<br>0.46<br>℃/W<br>Thermal Resistance DIODE Junction-Case<br>Rθ(j-c)<br>－<br>－<br>0.80<br>℃/W<br>８．ELECTRICAL CHARACTERISTICS（at Tj=25℃unless otherwise specified）<br>Item<br>Symbol<br>Test Conditions<br>Min.<br>Typ.<br>Max.<br>Units<br>Collector-Emitter Breakdown Voltage<br>BVCES<br>IC=10μA，VGE=0V<br>650<br>－<br>－<br>V<br>Collector Cut-off Current<br>ICES<br>VCE=650V，VGE=0V<br>－<br>－<br>10<br>μA<br>Collector Cut-off Current*2<br>ICES<br>VCE=650V，VGE=0V<br>Tj=175℃<br>－<br>－<br>5<br>mA<br>Gate-Emitter Leakage Current<br>IGES<br>VGE=±30V，VCE=0V<br>－<br>－<br>±200<br>nA<br>Gate-Emitter Threshold Voltage<br>VGE(th)<br>VCE=5V，IC=2.5mA<br>5.0<br>6.0<br>7.0<br>V<br>Collector-Emitter Saturation Voltage<br>VCE(sat)<br>IC=50A，VGE=15V<br>－<br>1.65<br>2.10<br>V<br>Collector-Emitter Saturation Voltage<br>VCE(sat)<br>IC=50A，VGE=15V<br>Tj=175℃<br>－<br>2.15<br>－<br>V<br>Input Capacitance<br>Cies<br>VCE=30V，VGE=0V<br>f=1MHz<br>－<br>1568<br>－<br>pF<br>Output Capacitance<br>Coes<br>－<br>134<br>－<br>pF<br>Reverse Transfer Capacitance<br>Cres<br>－<br>23<br>－<br>pF<br>Total Gate Charge<br>Qg<br>VCE=300V，IC=50A<br>VGE=15V<br>－<br>58<br>－<br>nC<br>Gate-Emitter Charge<br>Qge<br>－<br>15<br>－<br>nC<br>Gate-Collector Charge<br>Qgc<br>－<br>24<br>－<br>nC<br>Turn-on Delay Time<br>td(on)<br>IC=50A，VCC=400V<br>VGE=15V，RG=10Ω<br>Tj=25℃<br>Inductive Load<br>*Eoninclude diode<br>Reverse recovery<br>－<br>36<br>－<br>ns<br>Rise Time<br>tr<br>－<br>21<br>－<br>ns<br>Turn-off Delay Time<br>td(off)<br>－<br>115<br>－<br>ns<br>Fall Time<br>tf<br>－<br>91<br>－<br>ns<br>Turn-on Switching Loss<br>Eon<br>－<br>1.46<br>－<br>mJ<br>Turn-off Switching Loss<br>Eoff<br>－<br>1.29<br>－<br>mJ<br>Turn-on Delay Time<br>td(on)<br>IC=50A，VCC=400V<br>VGE=15V，RG=10Ω<br>Tj=175℃<br>Inductive Load<br>*Eoninclude diode<br>Reverse recovery<br>－<br>37<br>－<br>ns<br>Rise Time<br>tr<br>－<br>33<br>－<br>ns<br>Turn-off Delay Time<br>td(off)<br>－<br>145<br>－<br>ns<br>Fall Time<br>tf<br>－<br>154<br>－<br>ns<br>Turn-on Switching Loss<br>Eon<br>－<br>2.00<br>－<br>mJ<br>Turn-off Switching Loss<br>Eoff<br>－<br>1.87<br>－<br>mJ<br>~~Ronm |~~<br>~~es~~<br>~~eG~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~rs~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ef~~<br>~~|~~<br>~~ee ee~~<br>~~|~~<br>~~| |~~<br>~~ee ee~~<br>~~|~~<br>~~| |~~<br>~~pe~~<br>~~of~~<br>~~|~~<br>~~po~~<br>~~|~~<br>~~ft |~~<br>~~ee ee~~<br>~~|~~<br>~~| |~~<br>~~pe~~<br>~~|~~<br>~~|~~<br>~~ee ee~~<br>~~|~~<br>~~ft |~~<br>~~ee~~<br>~~of~~<br>~~|~~<br>~~ee ee~~<br>~~|~~<br>~~| |~~<br>~~ee ee~~<br>~~|~~<br>~~| |~~<br>~~pe~~<br>~~ef~~<br>~~|~~<br>~~po~~<br>~~|~~<br>~~| |~~<br>~~ee ee~~<br>~~|~~<br>~~| |~~<br>~~pe~~<br>~~ef~~<br>~~|~~<br>~~ee ee~~<br>~~|~~<br>~~ft |~~<br>~~ee~~<br>~~of~~<br>~~**|**~~<br>~~po~~<br>~~ot~~||||
|~~PROHMCotte]~~|REV.：001<br>~~]|~~|SPECIFICATION No.：TSQ50404-RGS00TS65E<br>~~|~~||



TSZ22111･05･002 

||PRODUCTS<br>ＩＧＢＴ|TYPE<br>ＲＧＳ００ＴＳ６５Ｅ|PAGE<br>３／４|
|---|---|---|---|
|Item<br>Symbol<br>Test Conditions<br>Min.<br>Typ.<br>Max.<br>Units<br>Reverse Bias Safe Operating Area<br>RBSOA<br>IC=150A，VCC=520V<br>VP=650V，VGE=15V<br>RG=50Ω，Tj=175℃<br>FULL SQUARE<br>－<br>Short Circuit Withstand Time<br>tsc<br>Vcc≦360V，VGE=15V<br>Tj=25℃<br>8<br>－<br>－<br>μs<br>Short Circuit Withstand Time*2<br>tsc<br>Vcc≦360V，VGE=15V<br>Tj=150℃<br>6<br>－<br>－<br>μs<br>Diode Forward Voltage<br>VF<br>IF=50A<br>－<br>1.45<br>1.90<br>V<br>Diode Forward Voltage<br>VF<br>IF=50A，Tj=175℃<br>－<br>1.50<br>－<br>V<br>Diode Reverse Recovery Time<br>trr<br>IF=50A，VCC=400V<br>diF/dt=400A/μs<br>Tj=25℃<br>－<br>113<br>－<br>ns<br>Diode Peak Reverse Recovery Current<br>Irr<br>－<br>14.1<br>－<br>A<br>Diode Reverse Recovery Charge<br>Qrr<br>－<br>0.92<br>－<br>μC<br>Diode Reverse Recovery Energy<br>Err<br>－<br>275<br>－<br>μJ<br>Diode Reverse Recovery Time<br>trr<br>IF=50A，VCC=400V<br>diF/dt=400A/μs<br>Tj=175℃<br>－<br>256<br>－<br>ns<br>Diode Peak Reverse Recovery Current<br>Irr<br>－<br>18.6<br>－<br>A<br>Diode Reverse Recovery Charge<br>Qrr<br>－<br>2.54<br>－<br>μC<br>Diode Reverse Recovery Energy<br>Err<br>－<br>565<br>－<br>μJ<br>*2) Design assurance without measurement<br>９．PACKAGE OUTLINE NAME<br>Package Type<br>TO-247N<br>Circuit Type<br>IGBT with Anti-parallel Diode<br>~~a~~<br>~~ee~~<br>~~es ee ee~~<br>~~ee~~<br>~~ee ee ee~~<br>~~es~~<br>~~es~~<br>~~eses~~<br>~~ee ee~~<br>~~| |~~<br>~~**|**~~<br>~~ee ~~~~**ee**~~<br>~~o~~~~**f**~~<br>~~ee~~<br>~~PfT~~<br>~~ee ee~~<br>~~| |~~<br>~~**|**~~<br>~~ee ee~~<br>~~ff~~<br>~~ee~~<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>~~pf~~<br>~~| |~~<br>~~ee ee~~<br>~~of~~<br>~~ft~~||||
|~~PROHM Cotta~~|REV.：001<br>~~a}~~<br>~~|~~|SPECIFICATION No.：TSQ50404-RGS00TS65E||



~~PROHM Cotta}~~ 

SPECIFICATION No.：TSQ50404-RGS00TS65E 

REV.：001 

TSZ22111･05･002 

## PRODUCTS TYPE PAGE ＩＧＢＴ ＲＧＳ００ＴＳ６５Ｅ ４／４ ~~ROnMm |~~ 

- １０． DEFINITION OF L-LOAD SWITCHING TIME MEASUREMENT 

**==> picture [473 x 339] intentionally omitted <==**

**----- Start of picture text -----**<br>
L-LOAD SWITCHING TIME                 SWITCHING TIME WAVEFORM<br>MEASUREMENT CIRCUIT<br>Gate Drive Time<br>90%<br>D.U.T.<br>VGE<br>D.U.T.<br>10%<br>VG<br>90%<br>IC<br>10%<br>DIODE RECOVERY TIME WAVEFORM  td(off)<br>td(on) E tr w tf<br>trr , Qrr ton toff<br>IF<br>diF/dt  VCE<br>VCE(sat)<br>Irr<br>**----- End of picture text -----**<br>


REV.：001 SPECIFICATION No.：TSQ50404-RGS00TS65E ~~FROHM Cotte]|~~ TSZ22111･05･002 



## Links

- [View this product on Novapart](https://novapart.co/products/RGS00TS65EHRC11/igbt-88-a-165-v-326-w-650-to-247n-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/rohm/rgs00ts65ehrc11/field-stop-trench-igbt-650v-50a/dp/2766353)
---

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