# IGBT, 20 A, 1.6 V, 107 W, 460 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:2766349/)

**URL**: https://novapart.co/products/RGPR20NS43HRTL/igbt-20-a-16-v-107-w-460-to-263-d2pak-3-pins
**SKU**: RGPR20NS43HRTL
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.7480
**Stock**: 100+
**Lead Time**: 2 days (indicative)

## Description

DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:107W; Collector Emitter Voltage V(br)ceo:460V; Transistor Case Style:TO-263; No.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 107W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 460V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2766349/)

RGPR20NS43 **430V 20A Ignition IGBT** 

Datasheet 

l **Outline** 

BVCES 43030V LPDS (TO-263S) (2) IC 20A VCE(sat) (Typ.) 1.6V (1) (3) EAS 250mJ ~~——~~ **Features** l **Inner Circuit** 1) Low Collector - Emitter Saturation Voltage (2) 2) High Self-Clamped Inductive Switching Energy (1) Gate (2) Collector (1) 3) Built in Gate-Emitter Protection Diode (3) Emitter 4) Built in Gate-Emitter Resistance 5) Qualified to AEC-Q101 (3) 

l **Features** 

- 1) Low Collector - Emitter Saturation Voltage 

- 2) High Self-Clamped Inductive Switching Energy 

- 3) Built in Gate-Emitter Protection Diode 

- 4) Built in Gate-Emitter Resistance 

- 5) Qualified to AEC-Q101 

6) Pb - free Lead Plating ; RoHS Compliant 

## l **Packaging Specifications** 

|Type|Packaging|Taping|
|---|---|---|
||Reel Size (mm)|330|
||Tape Width (mm)|24|
||Basic Ordering Unit (pcs)|1,000|
||Packing Code|TL|
||Marking|RGPR20NS43|



## l **Applications** 

Ignition Coil Driver Circuits Solenoid Driver Circuits 

## l **Absolute Maximum Ratings** (at TC = 25°C unless otherwise specified) 

|Parameter|Parameter|Symbol|Value|Unit|
|---|---|---|---|---|
|Collector - Emitter Voltage||VCES|460|V|
|Emitter-Collector Voltage (VGE= 0V)||VEC|25|V|
|Gate - Emitter Voltage||VGES|10|V|
|Collector Current||IC|20|A|
|Avalanche Energy (Single Pulse)|Tj= 25°C|EAS|250|mJ|
||Tj= 150°C|EAS<br>*2|150|mJ|
|Power Dissipation||PD|107|W|
|Operating Junction Temperature||Tj|-40 to +175|°C|
|Storage Temperature||Tstg|-55 to +175|°C|



www.rohm.com © 2017  ROHM Co., Ltd. All rights reserved. 

**2017.05 -  Rev.A** 

1/9 

Datasheet 

**RGPR20NS43** 

## l **Thermal Resistance** 

|l**Thermal Resistance**||||||
|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|
|||Min.|Typ.|Max.||
|Thermal Resistance IGBT Junction - Case|Rθ(j-c)|-|-|1.40|°C/W|



## l **Electrical Characteristics** (at Tj = 25°C unless otherwise specified) 

|l**Electrical Characteristics**(at|Tj= 25°C u|nless otherwise specifie|d)|d)|d)||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Collector - Emitter Breakdown<br>Voltage|BVCES|IC= 2mA, VGE= 0V|||||
|||Tj= 25°C|400|430|460|V|
|||Tj=-40 to 175°C*2|395|-|465|V|
|Emitter - Collector Breakdown<br>Voltage|BVEC|IC=-10mA, VGE= 0V|25|35|-|V|
|Gate - Emitter Breakdown<br>Voltage|BVGES|IG=5mA, VCE= 0V|12|-|17|V|
|Collector Cut - off Current|ICES|VCE= 300V, VGE= 0V|||||
|||Tj= 25°C|-|-|7|μA|
|||Tj= 150°C*2|-|-|100|μA|
|Gate - Emitter Leakage Current|IGES|VGE=10V, VCE= 0V|04|06|12|A|
||||.|.|.|m|
|Gate - Emitter Threshold<br>Voltage|VGE(th)|VCE= 5V, IC= 10mA|||||
|||Tj= 25°C|1.3|1.7|2.1|V|
|||Tj= 150°C*2|-|1.3|-|V|
|Collector - Emitter Saturation<br>Voltage|VCE(sat)|IC= 10A, VGE= 5V|||||
|||Tj= 25°C<br>Tj= 150°C|-|1.60|2.00|V|
||||-|1.80|-|V|
|Collector - Emitter Saturation<br>Voltage|VCE(sat)|IC= 4A, VGE= 4.5V|||||
|||Tj= 25°C<br>Tj= 150°C|-|1.17|1.50|V|
||||-|1.13|-|V|



www.rohm.com © 2017  ROHM Co., Ltd. All rights reserved. 

**2017.05 -  Rev.A** 

2/9 

Datasheet 

**RGPR20NS43** 

## l **Electrical Characteristics** (at Tj = 25°C unless otherwise specified) 

|l**Electrical Characteristics**(at|Tj= 25°C u|nless otherwise specifie|d)|d)|d)||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|||IC= 10A, VGE= 4V|||||
|Collector - Emitter Saturation<br>Voltage|VCE(sat)|Tj= 25°C|-|1.70|2.10|V|
|||Tj= 150°C|-|1.90|-|V|
|Input Capacitance|Cies|VGE= 0V<br>f = 1MHz<br>VCE= 10V|-|1000|-|pF|
|Output Capacitance|Coes||-|175|-||
|Reverse Transfer Capacitance|Cres||-|55|-||
|Total Gate Charge|Qg|VCE= 12V, IC= 10A,<br>VGE= 5V|-|14|-|nC|
|Turn - on Delay Time*1,*2|td(on)|IC= 8A, VCC= 300V,<br>VGE= 5V, RG= 100Ω,<br>L=5mH, Tj=25°C|0.09|0.17|0.50|μs|
|Rise Time*1,*2|tr||0.10|0.18|0.50||
|Turn - off Delay Time*1,*2|td(off)||0.8|1.3|4.0||
|Fall Time*1,*2|tf||1.4|2.4|6.0||
|Turn - on Delay Time*1|td(on)|IC= 8A, VCC= 300V,<br>VGE= 5V, RG= 100Ω,<br>L=5mH, Tj=150°C|-|0.16|-|μs|
|Rise Time*1|tr||-|0.23|-||
|Turn - off Delay Time*1|td(off)||-|1.5|-||
|Fall Time*1|tf||-|3.9|-||
|Alh E Sil Pl|E|L = 5mH, VGE= 5V,<br>VCC= 30V, RG= 1kΩ,|||||
|vaance nergy (nge use)|AS|Tj= 25°C|250|-|-|mJ|
|||Tj= 150°C*2|150|-|-|mJ|
|Gate Series Resistance|RG||70|100|130|Ω|
|Gate - Emitter Resistance|RGE||8|16|24|kΩ|



*1) Assurance items according to our measurement definition (Fig.18) 

- *2) Design assurance items 

www.rohm.com © 2017  ROHM Co., Ltd. All rights reserved. 

**2017.05 -  Rev.A** 

3/9 

Datasheet 

**RGPR20NS43** 

## l **Electrical Characteristic Curves** 

## Fig.1 Typical Output Characteristics 

## Fig.2 Typical Output Characteristics 

**==> picture [223 x 225] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>T = -40ºC<br>j<br>25 VGE= 10V<br>VGE= 8V<br>VGE= 4V<br>20 VGE= 5V<br>VGE= 4.5V<br>15<br>VGE= 3.5V<br>10<br>5<br>0<br>0 1 2 3 4 5<br>Collector To Emitter Voltage : VCE[V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


**==> picture [11 x 110] intentionally omitted <==**

**----- Start of picture text -----**<br>
 [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


**==> picture [196 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>T = 25ºC<br>j<br>25 VGE= 10V<br>VGE= 8V<br>20 VGE= 5V  VGE= 4V<br>15 VGE= 4.5V<br>VGE= 3.5V<br>10<br>5<br>0<br>0 1 2 3 4 5<br>**----- End of picture text -----**<br>


Collector To Emitter Voltage : VCE[V] 

## Fig.3 Typical Output Characteristics 

Fig.4 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 

**==> picture [473 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 1.5<br>Tj= 175ºC  IC= 5A<br>VGE= 10V<br>25<br>1.4<br>VGE= 8V  4V  VGE= 3.5V<br>20 VGE= 5V  4.5V<br>1.3<br>VGE= 4.5V<br>15<br>VGE= 4V  1.2<br>10<br>VGE= 3.5V<br>1.1 5V<br>5 8V<br>10V<br>0 1<br>0 1 2 3 4 5 -50 0 50 100 150 200<br>Collector To Emitter Voltage : VCE[V]  Junction Temperature : Tj [ºC]<br> [A]<br>C<br> [V]<br>CE(sat)<br> : V<br>Collector Current : I<br>Collector To Emitter Saturation Voltage<br>**----- End of picture text -----**<br>


www.rohm.com © 2017  ROHM Co., Ltd. All rights reserved. 

**2017.05 -  Rev.A** 

4/9 

Datasheet 

**RGPR20NS43** 

## l **Electrical Characteristic Curves** 

Fig.5 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 

Fig.6 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 

**==> picture [234 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.3<br>2.2 IC= 10A<br>2.1 VGE= 3.5V<br>2<br>4V<br>1.9 4.5V<br>1.8<br>1.7<br>1.6<br>1.5<br>1.4 5V  8V  10V<br>1.3<br>-50 0 50 100 150 200<br>Junction Temperature : Tj [ºC]<br> [V]<br>CE(sat)<br> : V<br>Collector To Emitter Saturation Voltage<br>**----- End of picture text -----**<br>


**==> picture [233 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.5<br>VGE= 5V  IC= 20A<br>3<br>2.5<br>10A<br>2 8A<br>5A<br>1.5<br>1<br>0.5 4.5A<br>1A<br>0<br>-50 0 50 100 150 200<br>Junction Temperature : Tj [ºC]<br> [V]<br>CE(sat)<br> : V<br>Collector To Emitter Saturation Voltage<br>**----- End of picture text -----**<br>


Fig.7 Typical Transfer Characteristics 

**==> picture [220 x 224] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>VCE= 5V<br>15<br>10<br>5 T = 175ºC<br>j<br>T = 25ºC<br>j<br>T = -40ºC<br>j<br>0<br>0 1 2 3 4 5<br>Gate to Emitter Voltage : VGE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


Fig.8 Typical Gate To Emitter Threshold Voltage vs. Junction Temperature 

**==> picture [233 x 226] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.5<br>2.3 VCE= 5V<br>IC= 10mA<br>2.1<br>1.9<br>1.7<br>1.5<br>1.3<br>1.1<br>0.9<br>0.7<br>0.5<br>-50 0 50 100 150 200<br>Junction Temperature : Tj [ºC]<br>[V]<br>GE (th)<br> : V<br>Gate To Emitter Threshold Voltage<br>**----- End of picture text -----**<br>


www.rohm.com © 2017  ROHM Co., Ltd. All rights reserved. 

**2017.05 -  Rev.A** 

5/9 

Datasheet 

**RGPR20NS43** 

## l **Electrical Characteristic Curves** 

Fig.9 Typical Leakage Current vs. Junction Temperature 

Fig.10 Typical Collector To Emitter Breakdown Voltage vs. Junction Temperature 

**==> picture [472 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 460<br>VGE= 0V<br>1000 VEC= 25V  450<br>100 440<br>ICES= 2mA<br>10 430<br>VCES= 300V<br>1 420<br>ICES= 1mA<br>0.1 VCES= 250V  410<br>0.01 400<br>-50 0 50 100 150 200 -50 0 50 100 150 200<br>Junction Temperature : Tj [ºC]  Junction Temperature : Tj [ºC]<br>A]<br>m<br> [<br>EC<br>/I<br>CES<br> [V]<br>CES<br>: BV<br>Leakage Current : I<br>Collector To Emitter Breakdown Voltage<br>**----- End of picture text -----**<br>


**==> picture [482 x 257] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.11 Typical Self Clamped Inductive   Fig.12 Typical Gate Charge<br>           Switching Current vs. Inductance<br>40 5<br>35 VCC= 30V<br>VGE= 5V  4<br>30 RG= 1kΩ<br>25<br>3<br>20<br>2<br>15<br>10<br>1 VCC= 12V<br>5 IC= 10A<br>T = 25ºC<br>j<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 0 5 10 15<br>Inductance : L [mH]  Gate Charge : Qg [nC]<br> [V]<br>GE<br> [A]<br>AS<br> : I<br>Gate To Emitter Voltage : V<br>Self Clamped Inductive Switching Current<br>**----- End of picture text -----**<br>


www.rohm.com © 2017  ROHM Co., Ltd. All rights reserved. 

**2017.05 -  Rev.A** 

6/9 

Datasheet 

**RGPR20NS43** 

## l **Electrical Characteristic Curves** 

**==> picture [477 x 254] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.13 Typical Capacitance   Fig.14 Typical Switching Time<br>            vs. Collector To Emitter Voltage             vs. Junction Temperature<br>10000 10<br>VCC= 300V, IC= 8A,<br>VGE= 5V, L= 5mH  tf<br>Cies<br>1000<br>t<br>d(off)<br>100 1<br>Coes<br>10<br>f= 1MHz  tr<br>VGE= 0V  Cres<br>T = 25ºC<br>j t<br>d(on)<br>1 0.1<br>0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 200<br>Collector To Emitter Voltage : VCE[V]  Junction Temperature : Tj [ºC] j [ºC]  [ºC]<br>Capacitance [pF]<br>Switching Time [μs]<br>**----- End of picture text -----**<br>


Junction Temperature : Tj [ºC] j [ºC]  [ºC] 

Fig.15 Forward Bias Safe Operating Area 

**==> picture [231 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>10µs<br>10<br>100µs<br>1<br>1ms<br>0.1<br>10ms<br>TC= 25ºC<br>Single Pulse<br>0.01<br>1 10 100 1000<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>


Collector To Emitter Voltage : VCE[V] 

www.rohm.com © 2017  ROHM Co., Ltd. All rights reserved. 

**2017.05 -  Rev.A** 

7/9 

Datasheet 

**RGPR20NS43** 

## l **Electrical Characteristic Curves** 

## Fig.16 Transient Thermal Impedance 

**==> picture [477 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 D= 0.5  0.2  0.1<br>0.3<br>0.1<br>Ge = = = x<br>Single Pulse  PDM<br>) HUL<br>0.01<br>t1<br>SF ot LAS<br>0.02  t2<br>0.05  C1 C2 C3 R1 R2 R3 Duty=t1/t2<br>308.8u 1.522m 20.34m 238.3m 727.0m 34.70m Peak Tj=PDM×ZthJC+TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width : t1[s]<br> [ºC/W]<br>thJC<br> : Z<br>Transient Thermal Impedance<br>**----- End of picture text -----**<br>


www.rohm.com © 2017  ROHM Co., Ltd. All rights reserved. 

**2017.05 -  Rev.A** 

8/9 

Datasheet 

**RGPR20NS43** 

## l **Inductive Load Switching Circuit and Waveform** 

**==> picture [95 x 36] intentionally omitted <==**

**==> picture [223 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
D.U.T.<br>VG<br>**----- End of picture text -----**<br>


Fig.17 Inductive Load Switching Circuit 

**==> picture [260 x 331] intentionally omitted <==**

**----- Start of picture text -----**<br>
Gate Drive Time<br>90%<br>VGE<br>10%<br>90%<br>IC  10%<br>t<br>d(off)<br>t<br>d(on)<br>tr tf<br>ton toff<br>VCE<br>V<br>CE(sat)<br>**----- End of picture text -----**<br>


Fig.18 Inductive Load Switching Waveform 

## l **Self Clamped Inductive Switching Circuit and Waveform** 

**==> picture [490 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
V<br>clamp<br>IC<br>D.U.T.<br>VCE<br>VCC<br>VG  V<br>CE(sat)<br>EAS<br>**----- End of picture text -----**<br>


Fig.19 Self Clamped Inductive Switching Ciruit 

Fig.20 Self Clamped Inductive Switching Waveform 

www.rohm.com © 2017  ROHM Co., Ltd. All rights reserved. 

**2017.05 -  Rev.A** 

9/9 

Notice 

- **N o t e s** 

- 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 

- 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 

- 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

- 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 

- 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 

- 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 

- 9) ROHM shall have no responsibility for any damages or injury arising  from non-compliance with the recommended usage conditions and specifications contained herein. 

- 10) ROHM has used reasonable care to ensur  the accuracy of the information contained  in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 

- 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have  no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 

- 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 

- 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 

**==> picture [80 x 61] intentionally omitted <==**

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