# Power MOSFET, P Channel, 20 V, 10 A, 0.018 ohm, HUML2020, Surface Mount

![Product image](https://novapart.co/image/farnell:2490606/)

**URL**: https://novapart.co/products/RF4C050APTR/power-mosfet-p-channel-20-v-10-a-0018-ohm-huml2020
**SKU**: RF4C050APTR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1890
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 2W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.018ohm |
| Transistor Case Style | HUML2020 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2490606/)

Datasheet 

Pch -20V -10A Middle Power MOSFET 

## RF4C050AP 

## **l Outline** 

|VDSS|-20V|
|---|---|
|RDS(on)(Max.)|26mΩ|
|ID|±10A|
|PD|2W|



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 HUML2020L8<br>DFN2020-8S<br>**----- End of picture text -----**<br>


## **l Inner circuit** 

## **l Features** 

1) Low on - resistance. 

2) High Power small mold Package (HUML2020L8). 

3) Pb-free lead plating ; RoHS compliant. 

- 4) Halogen Free. 

## **l Packaging specifications** 

## **l Application** 

Switching Load switch 

|Type|Packing|Embossed<br>Tape|
|---|---|---|
||Reel size(mm)|180|
||Tape width(mm)|8|
||Basic orderingunit(pcs)|3000|
||Tapingcode|TR|
||Marking|SJ|



## **l Absolute maximum ratings** (Ta = 25°C) 

|**lAbsolute maximum ratings**(Taa = 25°C)||||
|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|Drain - Source voltage|VDSS|-20|V|
|Continuous drain current|ID|±10|A|
|Pulsed drain current|ID,pulse*1|±20|A|
|Gate - Source voltage|VGSS|0～-8|V|
|Power dissipation|PD*2|2|W|
|Junction temperature|Tj|150|℃|
|Range of storage temperature|Tstg|-55 to +150|℃|



www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Thermal resistance** 

|**lThermal resistance**||||||
|---|---|---|---|---|---|
||||Values|||
|Parameter|Symbol|Min.|Typ.|Max.|Unit|
|Thermal resistance, junction - ambient|RthJA*2|-|62.5|-|℃/W|



## **l Electrical characteristics (Ta = 25°C)** 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Drain - Source breakdown<br>voltage|V(BR)DSS|VGS= 0V, ID= -1mA|-20|-|-|V|
|Breakdown voltage<br>temperature coefficient|ΔV(BR)DSS <br>  ΔTj|ID= -1mA<br> referenced to 25℃|-|-9.3|-|mV/℃|
|Zero gate voltage<br>drain current|IDSS|VDS= -20V, VGS= 0V|-|-|-10|μA|
|Gate - Source leakage current|IGSS|VGS= -8V, VDS= 0V|-|-|-10|μA|
|Gate threshold voltage|VGS(th)|VDS= -10V, ID= -1mA|-0.3|-|-1.0|V|
|Gate threshold voltage<br>temperature coefficient|ΔVGS(th) <br>  ΔTj|ID= -1mA<br> referenced to 25℃|-|1.8|-|mV/℃|
|Static drain - source<br>on - state resistance|RDS(on)*3|VGS= -4.5V, ID= -5.0A|-|18|26|mΩ|
|||VGS= -2.5V, ID= -2.5A|-|22|31||
|||VGS= -1.8V, ID= -2.5A|-|27|45||
|||VGS= -1.5V, ID= -1.0A|-|32|65||
|Forward Transfer<br>Admittance||Yfs|*3|VDS= -10V, ID= -5.0A|8|-|-|S|



*1 Pw ≦ 10μs, Duty cycle ≦ 1% 

- *2 MOUNTED ON 40mm×40mm Cu BOARD 

*3 Pulsed 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Electrical characteristics** (Ta = 25°C) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Input capacitance|Ciss|VGS= 0V<br>VDS= -10V<br>f = 1MHz|-|5500|-|pF|
|Output capacitance|Coss||-|230|-||
|Reverse transfer capacitance|Crss||-|210|-||
|Turn - on delay time|td(on)*3|VDD ⋍-10V,VGS= -4.5V<br>ID= -2.5A<br>RL ⋍4.02Ω<br>RG= 10Ω|-|16|-|ns|
|Rise time|tr*3||-|16|-||
|Turn - off delay time|td(off)*3||-|580|-||
|Fall time|tf*3||-|160|-||



## **l Gate charge characteristics** (Ta = 25°C) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Total gate charge|Qg*3|VDD ⋍-10V,<br>ID= -5.0A,<br>VGS= -4.5V|-|55|-|nC|
|Gate - Source charge|Qgs*3||-|6.4|-||
|Gate - Drain charge|Qgd*3||-|8.4|-||



## **l Body diode electrical characteristics** (Source-Drain) (Ta = 25°C) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Body diode continuous<br>forward current|IS|Ta= 25℃|-|-|-1.6|A|
|Body diode<br>pulse current|ISP*1||-|-|-20|A|
|Forward voltage|VSD*3|VGS= 0V, IS= -1.6A|-|-|-1.2|V|



www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

3/11 

**RF4C050AP** 

Datasheet 

## **l Electrical characteristic curves** 

## Fig.1 Power Dissipation Derating Curve 

Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 

## Fig.2 Maximum Safe Operating Area 

Fig.4 Single Pulse Maximum Power dissipation 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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Datasheet 

## **l Electrical characteristic curves** 

Fig.5 Typical Output Characteristics(I) 

Fig.7 Breakdown Voltage vs. Junction Temperature 

## Fig.6 Typical Output Characteristics(II) 

Fig.8 Typical Transfer Characteristics 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**RF4C050AP** 

Datasheet 

## **l Electrical characteristic curves** 

Fig.9 Gate Threshold Voltage vs. Junction Temperature 

Fig.11 Drain Current Derating Curve 

Fig.10 Tranceconductance vs. Drain Current 

Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Electrical characteristic curves** 

Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 

Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) 

Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) 

Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**RF4C050AP** 

Datasheet 

## **l Electrical characteristic curves** 

Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(Ⅳ) 

Fig.19 Typical Capacitance vs. Drain - Source Voltage 

Fig.18 Static Drain - Source On - State Resistance vs. Drain Current(Ⅴ) 

Fig.20 Switching Characteristics 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**RF4C050AP** 

Datasheet 

## **l Electrical characteristic curves** 

Fig.21 Dynamic Input Characteristics 

Fig.22 Source Current vs. Source Drain Voltage 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Measurement circuits** 

Fig.1-1 Switching Time Measurement Circuit 

Fig.2-1 Gate Charge Measurement Circuit 

## Fig.1-2 Switching Waveforms 

Fig.2-2 Gate Charge Waveform 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Dimensions** 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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Notice 

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Notes<br>1) The information contained herein is subject to change without notice.<br>2) Before you use our Products, please contact our sales representative and verify the latest specifica-<br>tions:<br>3) Although ROHM is continuously working to improve product reliability and quality, semicon-<br>ductors can break down and malfunction due to various factors.<br>Therefore, in order to prevent personal injury or fire arising from failure, please take safety<br>measures such as complying with the derating characteristics, implementing redundant and<br>fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no<br>responsibility for any damages arising out of the use of our Poducts beyond the rating specified<br>by ROHM.<br>4) Examples of application circuits, circuit constants and any other information contained herein are<br>provided only to illustrate the standard usage and operations of the Products. The peripheral<br>conditions must be taken into account when designing circuits for mass production.<br>5) The technical information specified herein is intended only to show the typical functions of and<br>examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,<br>any license to use or exercise intellectual property or other rights held by ROHM or any other<br>parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of<br>such technical information.<br>6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-<br>cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in<br>this document.<br>7) The Products specified in this document are not designed to be radiation tolerant.<br>8) For use of our Products in applications requiring a high degree of reliability (as exemplified<br>below), please contact and consult with a ROHM representative : transportation equipment (i.e.<br>cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety<br>equipment, medical systems, servers, solar cells, and power transmission systems.<br>9) Do not use our Products in applications requiring extremely high reliability, such as aerospace<br>equipment, nuclear power control systems, and submarine repeaters.<br>10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with<br>the recommended usage conditions and specifications contained herein.<br>11) ROHM has used reasonable care to ensur the accuracy of the information contained in this<br>document. However, ROHM does not warrants that such information is error-free, and ROHM<br>shall have no responsibility for any damages arising from any inaccuracy or misprint of such<br>information.<br>12) Please use the Products in accordance with any applicable environmental laws and regulations,<br>such as the RoHS Directive. For more details, including RoHS compatibility, please contact a<br>ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting<br>non-compliance with any applicable laws or regulations.<br>13) When providing our Products and technologies contained in this document to other countries,<br>you must abide by the procedures and provisions stipulated in all applicable export laws and<br>regulations, including without limitation the US Export Administration Regulations and the Foreign<br>Exchange and Foreign Trade Act.<br>14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of<br>ROHM.<br>**----- End of picture text -----**<br>


Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

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http://www.rohm.com/contact/ 

www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 

R1102A 

**Datasheet** 

Buy RF4C050AP - Web Page Buy Distribution Inventory 

|Part Number|RF4C050AP|
|---|---|
|Package|HUML2020L8(Single)|
|Package<br>Unit Quantity|HUML2020L8(Single)<br>3000|
|Unit Quantity<br>Minimum Package Quantity|3000|
|Minimum Package Quantity<br>Packing Type|Taping|
|Packing Type<br>Constitution Materials List|Taping<br>inquiry|
|RoHS|inquiry<br>Yes|





## Links

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- [Supplier page](https://es.farnell.com/en-ES/rohm/rf4c050aptr/mosfet-p-ch-20v-10a-huml2020-8/dp/2490606)
---

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