# TVS Diode, A.S.D, 20 V, 40 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:2629705/)

**URL**: https://novapart.co/products/RBO08-40G/tvs-diode-asd-20-v-40-to-263-d2pak-3-pins
**SKU**: RBO08-40G
**Manufacturer**: STMICROELECTRONICS
**Category**: Circuit Protection || TVS - Transient Voltage Suppressors || TVS Diodes
**Price**: €1.9100
**Stock**: 10+

## Description

Product Range:A.S.D Series; TVS Polarity:-; Reverse Stand-Off Voltage Vrwm:20V; Clamping Voltage Vc Max:40V; Diode Case Style:TO-263; No. of ; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Tvs Polarity | - |
| Product Range | A.S.D |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263 (D2PAK) |
| Clamping Voltage Max | 40V |
| Reverse Standoff Voltage | 20V |
| Maximum Breakdown Voltage | 32V |
| Minimum Breakdown Voltage | 24V |
| Operating Temperature Max | 150°C |
| Peak Pulse Power Dissipation | 600W |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2629705/)

® 

# **RBO08-40G/T** 

Application Specific Discretes A.S.D.™ 

# REVERSED BATTERY AND OVERVOLTAGE PROTECTION 

## **FEATURES** 

- I 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. 

- I NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. 

- I COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b. 

- I SUITABLE FOR AUTOPROTECTED ALTERNATOR ENVIRONMENT. 

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D [2] PAK<br>RBO08-40G<br>**----- End of picture text -----**<br>


- I BREAKDOWN VOLTAGE : 24 V min. 

- I CLAMPING VOLTAGE : ± 40 V max. 

- I MONOLITHIC STRUCTURE FOR GREATER RELIABILITY. 

## **DESCRIPTION** 

Designed to protect against battery reversal and overvoltages in automotive applications, this monolithic component offers multiple functions in the same package : 

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TO220-AB<br>RBO08-40T<br>**----- End of picture text -----**<br>


- D1 : reversed battery protection 

- T1 : clamping against negative overvoltages 

- T2 : Transil function for overvoltage protection. 

## **FUNCTIONAL DIAGRAM** 

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1 3<br>2<br>**----- End of picture text -----**<br>


TM : TRANSIL and ASD are trademarks of STMicroelectronics. 

1/9 

October 2003 - Ed: 3 

**RBO08-40G / RBO08-40T** 

## **ABSOLUTE MAXIMUM RATINGS** 

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Symbol Parameter Value Unit<br>IFSM Non repetitive surge peak forward current tp = 10 ms 80 A<br>(Diode D1)<br>IF DC forward current (Diode D1) Tc = 75°C 8 A<br>PPP Peak pulse power between Input and Output 10/1000 µs 600 W<br>(Transil T1) see note 1 Tj initial = 25°C<br>PPP Peak pulse power between Pins 3 and 2 (10/1000µs) 1500 W<br>Tstg Storage temperature range - 40 to + 150 °C<br>Tj Maximum junction temperature 150<br>TL Maximum lead temperature for soldering during 10 s 260 °C<br>at 4.5mm from case for TO220-AB<br>**----- End of picture text -----**<br>


**Note 1 :** for a surge greater than the maximum value, the device will fail in short-circuit.. 

## **THERMAL RESISTANCE** 

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Symbol Parameter Value Unit<br>Rth (j-c) Junction to case RBO08-40M 2.4 °C/W<br>RBO08-40T 2.4<br>**----- End of picture text -----**<br>


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D1 I32<br>I13<br>1 3 Ipp32<br>IF<br>T1 2 T2 IR32<br>IR M 32<br>VCL 31 VBR31 VRM31 VF13 V13 VRM 32 VBR 32 VCL32 V32<br>IRM31<br>IR31 1 3<br>Ipp31 2<br>**----- End of picture text -----**<br>


2/9 

**RBO08-40G / RBO08-40T** 

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Symbol Parameter<br>VRM31/VRM32 Stand-off voltage Transil T1 / Transil T2.<br>VBR31/VBR32 Breakdown voltage Transil T1 / Transil T2.<br>IR31/IR32 Leakage current Transil T1 / Transil T2.<br>VCL31/VCL32 Clamping voltage Transil T1 / Transil T2.<br>VF13 Forward voltage drop Diode D1.<br>IPP Peak pulse current.<br>αT Temperature coefficient of VBR.<br>C31/C32 Capacitance Transil T1 / Transil T2.<br>**----- End of picture text -----**<br>


## **ELECTRICAL CHARACTERISTICS : DIODE D1** (- 40°C < Tamb < + 85°C) 

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Value<br>Symbol Test Conditions Unit<br>Min. Typ. Max.<br>VF 13 IF = 8 A RBO08-40G 1.5 V<br>RBO08-40T 1.7 V<br>IF = 8 A @ Tamb = 25°C 1.45 V<br>VF 13 IF = 4 A RBO08-40G 1.3 V<br>RBO08-40T 1.35 V<br>IF = 4 A @ Tamb = 25°C 1.2 V<br>VF 13 IF = 1 A 1.1 V<br>IF = 1 A @ Tamb = 25°C 1.0 V<br>IF = 1 A @ Tj = 85°C 0.9 V<br>**----- End of picture text -----**<br>


## **ELECTRICAL  CHARACTERISTICS : TRANSIL T1** (- 40°C < Tamb < + 85°C) 

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Value<br>Symbol Test Conditions Unit<br>Min. Typ. Max.<br>VBR 31 IR = 1 mA 22 35 V<br>VBR 31 IR = 1 mA, Tamb = 25°C 24 32 V<br>IRM 31 VRM = 20 V 50 µA<br>IRM 31 VRM = 20 V, Tamb = 25°C 10 µA<br>VCL 31 IPP = 15A, Tj initial = 25°C 10/1000µs 40 V<br>α T Temperature coefficient of VBR 9 10 [-4] /°C<br>C 31 F = 1MHz VR = 0 V 1000 pF<br>**----- End of picture text -----**<br>


## **ELECTRICAL  CHARACTERISTICS : TRANSIL T2** (- 40°C < Tamb < + 85°C) 

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Value<br>Symbol Test Conditions Unit<br>Min. Typ. Max.<br>VBR 32 IR = 1 mA 22 35 V<br>VBR 32 IR = 1 mA, Tamb = 25°C 24 32 V<br>IRM 32 VRM = 20 V 50 µA<br>IRM 32 VRM = 20 V, Tamb = 25°C 10 µA<br>VCL 32 IPP = 37.5 A 10/1000µs 40 V<br>α T Temperature coefficient of VBR 8.5 10 [-4] /⊃<br>C<br>**----- End of picture text -----**<br>


3/9 

## **RBO08-40G / RBO08-40T** 

## **PRODUCT DESCRIPTION** 

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1 3<br>2<br>**----- End of picture text -----**<br>


The RBO has 3 functions integrated on the same chip. 

D1 : “Diode function” in order to protect against reversed battery operation. 

T2 : “Transil function” in order to protect against positive surge generated by electric systems (ignition, relay. ...). 

T1 : Protection againt negative surges such as inductive overvoltages (see motor application below). 

## **BASIC APPLICATION** 

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* The monolithic multi-function protection (RBO) has been developed to protect sensitive semiconductors in car electronic modules against both overvoltage and battery reverse. 

* In addition, the RBO circuit prevents overvoltages generated by the module from affecting the car supply network. 

## **MOTOR DRIVER APPLICATION** 

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BATTERY<br>D1<br>Filter<br>T2<br>MOTOR<br>T1<br>RBO<br>DEVICE MOTOR CONTROL<br>**----- End of picture text -----**<br>


In this application, one half of the motor drive circuit is supplied through the “RBO” and is thus protected as per its basic function application. 

- The second part is connected directly to the “car supply network” and is protected as follows : - For positive surges : T2 (clamping phase) and D1 in forward-biased. 

- For negative surges : T1 (clamping phase) and T2 in forward-biased. 

4/9 

**RBO08-40G / RBO08-40T** 

## **PINOUT configuration in D**[2] **PAK :** 

- Input (1) : Pin 1 

- Output (3) : Pin 3 

- Gnd (2) : Connected to base Tab 

## **PINOUT configuration in TO220AB :** 

- Input (1) : Pin 1 - Output (3) : Pin 3 

- GND (2) : Connected to base Tab 

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D1<br>T2<br>T1<br>TAB<br>**----- End of picture text -----**<br>


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D1<br>T2<br>T1<br>(TAB)<br>**----- End of picture text -----**<br>


5/9 

**RBO08-40G / RBO08-40T** 

**Fig. 1 :** Peak pulse power versus exponential pulse duration (Tj initial = 85°C). 

**Fig. 2-1 :** Clamping voltage versus peak pulse current (Tj initial = 85°C). 

Exponential waveform tp = 40 ms and tp = 1 ms (TRANSIL T2). 

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Pp p (kW)<br>10.0<br>5.0<br>2.0<br>1.0 Transil T2<br>0.5<br>Diode D1<br>0.2<br>tp(ms)<br>0.1<br>1 2 5 10 20 50 100<br>**----- End of picture text -----**<br>


**Fig. 2-2 :** Clamping voltage versus peak pulse current (Tj initial = 85°C). 

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VCL(V)<br>45<br>40<br>tp = 40ms<br>35<br>tp = 1ms<br>30<br>Ipp(A)<br>25<br>0.1 0.2 0.5 1.0 2.0 5.0 10.0 20.0 50.0<br>**----- End of picture text -----**<br>


**Fig. 3 :** Relative variation of peak pulse power versus junction temperature. 

Exponential waveform tp = 1 ms and tp = 20 µs (TRANSIL T1). 

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VCL(V)<br>50<br>45<br>40<br>tp = 1ms<br>35<br>tp = 20 µ s<br>30<br>Ipp(A)<br>25<br>0.1 0.2 0.5 1.0 2.0 5.0 10.0 20.0 50.0 100.0<br>**----- End of picture text -----**<br>


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Ppp[Tj]/Ppp[Tj initial=85°C]<br>1.20<br>1.00<br>0.80<br>0.60<br>0.40<br>0.20<br>Tj initial (°C)<br>0.00<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


6/9 

**RBO08-40G / RBO08-40T** 

**Fig. 4 :** Relative variation of thermal impedance junction to case versus pulse duration. 

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Zth(j-c)/Rth(j-c)<br>1.0<br>0.5<br>0.2<br>tp (s)<br>0.1<br>1E-3 1E-2 1E-1 1E+0 1E+1<br>**----- End of picture text -----**<br>


**Fig. 5-1 :** Peak forward voltage drop versus peak forward current (typical values) - (TRANSIL T2). 

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VFM(V)<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0 Tj=25°C<br>0.8<br>0.6<br>Tj=150°C<br>0.4<br>0.2 IFM (A)<br>0.0<br>0.1 1.0 10.0 20.0<br>**----- End of picture text -----**<br>


**Fig. 5-2 :** Peak forward voltage drop versus peak forward current (typical values) - (DIODE D1). 

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VFM(V)<br>1.6<br>1.4<br>1.2<br>1.0<br>Tj=25°C<br>0.8<br>0.6<br>0.4 Tj=150°C<br>0.2<br>IFM (A)<br>0.0<br>0.1 1.0 10.0 20.0<br>**----- End of picture text -----**<br>


**Fig. 6 :** Relative variation of leakage current versus junction temperature. 

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## **ORDERING INFORMATION** 

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-<br>RBO  08 40  G<br>Reverse Battery & VCL = 40V<br>Overvoltage Protection<br>IF(AV) = 8A Package:<br>G = D2PAK<br>T = TO-220AB<br>**----- End of picture text -----**<br>


7/9 

## **RBO08-40G / RBO08-40T** 

## **PACKAGE MECHANICAL DATA** 

D[2] PAK Plastic 

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DIMENSIONS<br>REF. Millimeters Inches<br>A<br>Min. Typ. Max. Min. Typ. Max.<br>E<br>C 2 A 4.30 4.60 0.169 0.181<br>L2<br>A1 2.49 2.69 0.098 0.106<br>A2 0.03 0.23 0.001 0.009<br>D B 0.70 0.93 0.027 0.037<br>L<br>B2 1.40 0.055<br>L3 C 0.45 0.60 0.017 0.024<br>A1<br>C2 1.21 1.36 0.047 0.054<br>B2 C R D 8.95 9.35 0.352 0.368<br>B E 10.00 10.28 0.393 0.405<br>G 4.88 5.28 0.192 0.208<br>G<br>L 15.00 15.85 0.590 0.624<br>A2<br>L2 1.27 1.40 0.050 0.055<br>2.0 MIN.<br>FLAT ZONE L3 1.40 1.75 0.055 0.069<br>R 0.40 0.016<br>V2<br>V2 0° 8° 0° 8°<br>**----- End of picture text -----**<br>


## **FOOT-PRINT** D[2] PAK 

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16.90<br>10.30 5.08<br>1.30<br>3.70<br>8.90<br>**----- End of picture text -----**<br>


8/9 

**RBO08-40G / RBO08-40T** 

## **PACKAGE MECHANICAL DATA** TO-220AB Plastic 

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DIMENSIONS<br>REF. Millimeters Inches<br>Min. Max. Min. Max.<br>A 14.23 15.87 0.560 0.625<br>a1 4.50 0.177<br>a2 12.70 14.70 0.500 0.579<br>B 10.20 10.45 0.402 0.411<br>b1 0.64 0.96 0.025 0.038<br>b2 1.15 1.39 0.045 0.055<br>C 4.48 4.82 0.176 0.190<br>c1 0.35 0.65 0.020 0.026<br>c2 2.10 2.70 0.083 0.106<br>e 2.29 2.79 0.090 0.110<br>F 5.85 6.85 0.230 0.270<br>I 3.55 4.00 0.140 0.157<br>L 2.54 3.00 0.100 0.118<br>l2 1.45 1.75 0.057 0.069<br>l3 0.80 1.20 0.031 0.047<br>**----- End of picture text -----**<br>


Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics. 

All other names are the property of their respective owners. 

- © 2003 STMicroelectronics - All rights reserved. 

STMicroelectronics GROUP OF COMPANIES 

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## **www.st.com** 

9/9 



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---

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