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RBA200N15YAPF-6UA03#KB0
Power MOSFET, N Channel, 150 V, 200 A, 0.0034 ohm, TOLT, Surface Mount
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- Manufacturer: RENESAS
- Product type:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 16Pins
- Channel Type: N Channel
- Product Range: REXFET-1 Series
- Qualification: AEC-Q101
- Power Dissipation: 366W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TOLT
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 200A
- Drain Source On State Resistance: 0.0034ohm
- Gate Source Threshold Voltage Max: 3.7V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.58 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
Datasheet ## **RBA200N15YAPF-6UA03** ## REXFET-1 N-Channel Power MOSFET 150 V - 200 A - 3.4 mΩ - TOLT for Automotive ## **Description** The RBA200N15YAPF-6UA03 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications. ## **Features** - Standard level gate drive voltage: VGS(th) = 2.2 to 3.7 V - Super low on-state resistance: RDS(on) = 3.4 m MAX. - Low input capacitance - Low thermal resistance - 100% Avalanche tested - AEC-Q101 qualified - PPAP capable - Pb-free lead plating: RoHS compliant - MSL1 classified according to IPC/JEDEC J-STD-020 ## **Application** Small Traction (2-wheel, 3-wheel vehicle), 72 to 96 V load, Onboard charger, Charging station, Low voltage DC/DC, **Outline** **==> picture [435 x 112] intentionally omitted <==** **----- Start of picture text -----**<br> 9 Drain<br>9 to 16,Heatsink<br>A200N15<br>16<br>16 Heatsink<br>8 9 Gate YUA Trace code<br>0 8<br>1 1 ag ARG<br>Source Mark part number Lot number<br>BS « 1 to 7<br>8<br>TOLT Equivalent circuit Marking Specification<br>**----- End of picture text -----**<br> ## **Absolute Maximum Ratings** (Tj = 25 °C unless otherwise notice) |**Item**|**Symbol**|**Ratings **|**Unit**| |---|---|---|---| |Drain to Source Voltage|VDSS|150|V| |Gate to Source Voltage|VGSS|±20|V| |Continuous Drain Current|ID(Tc=25°C)<br>Note 2,6|±200|A| ||ID(Tc=100°C)<br>Note 2,6|±148|A| |Pulsed Drain Current|ID(pulse)<br>Note 1,2,3,6|±800|A| |Power Dissipation|PDNote 1,6|366|W| |Operating and Storage Temperature|Tj,Tstg|-55 to 175|°C| |Single Avalanche Current|IAS<br>Note 4|75|A| |Single Avalanche Energy|EAS<br>Note 4|421|mJ| R07DS1629EJ0100 Rev.1.00 Aug.19.2025 Page 1 of 9 RBA200N15YAPF-6UA03 ## **Thermal Resistance** |**Thermal Resistance**|||||| |---|---|---|---|---|---| |**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Junction to Case Thermal Resistance|Rth(j-c)<br>Note 6|—|—|0.41|°C/W| |Junction to Ambient Thermal Resistance|Rth(j-a)Note 5,6|—|—|40|°C/W| ## **Electrical Characteristics** (Tj = 25 °C unless otherwise notice) |**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**| |---|---|---|---|---|---|---| |Zero Gate Voltage Drain Current|IDSS|—|—|1|A|VDS= 150 V, VGS= 0 V| |Gate Leakage Current|IGSS|—|—|±100|nA|VGS= ±20 V, VDS= 0 V| |Gate to Source Threshold Voltage|VGS(th)|2.2|—|3.7|V|VDS= VGS, ID= 250A| |Drain to Source On-state Resistance|RDS(on)|—|2.8|3.4|m|VGS= 10 V, ID= 100 A| |Input Capacitance|Ciss|—|6200|—|pF|VDS= 75 V, VGS= 0 V<br>f = 100 kHz| |Output Capacitance|Coss|—|2100|—|pF|| |Reverse Transfer Capacitance|Crss|—|37|—|pF|| |Gate resistance|Rg|—|4.4|—||—| |Turn-on Delay Time|td(on)|—|30|—|ns|VDD= 75 V, ID= 50 A<br>VGS= 10 V<br>RG= 5| |Rise Time|tr|—|20|—|ns|| |Turn-off Delay Time|td(off)|—|95|—|ns|| |Fall Time|tf|—|20|—|ns|| |Total Gate Charge|Qg|—|86|—|nC|VDD= 75 V, ID= 50 A<br>VGS= 10 V| |Gate to Source Charge|Qgs|—|30|—|nC|| |Gate to Drain Charge|Qgd|—|15|—|nC|| |Gate plateau voltage|Vplateau|—|5.0|—|V|| |Output Charge|Qoss|—|255|—|nC|VDS= 75 V, VGS= 0 V| |Body Diode Forward Voltage|VF(S-D)|—|0.87|1.5|V|IF= 100 A, VGS= 0 V| |Reverse Recovery Time|trr|—|120|—|ns|IF= 50 A, VGS= 0 V<br>di/dt= 100 A/s| |Reverse Recovery Charge|Qrr|—|400|—|nC|| Note 1. Tc = 25 °C 2. Value is limited by overall system design including PCB. 3. PW 10 s 4. L = 100 H, VDD = 50 V, RG = 25 5. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4. (2 oz Cu pad.) 6. Defined by design. Not subject to production test. R07DS1629EJ0100 Rev.1.00 Aug.19.2025 Page 2 of 9 RBA200N15YAPF-6UA03 ## **Typical Characteristics** DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA **==> picture [181 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>TC - Case Temperature - °C<br>FORWARD BIAS SAFE OPERATING AREA<br>1000<br>100<br>10 T C = 25 °C<br>Single pulse<br>1<br>0.1<br>0.01<br>1 10 100 200<br>VDS - Drain to Source Voltage - V<br>RDS(on)limit<br>PW = 1 µs<br>PW = 10 µs<br>PW = 100 µs<br>PW = 1 ms<br>PW = 10 ms<br>DC<br> - Percentage of Rated Power - %dT<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br> FORWARD BIAS SAFE OPERATING AREA **==> picture [179 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> TRANSIENT THREMAL IMPEDANCE<br>vs. PULSE WIDTH<br>10<br>TC = 25 °C<br>1<br>0.1<br>0.01<br>0.001<br>10 µ 100 µ 1 m 10 m 100m 1<br>PW - Pulse Width - s<br>D = PW / T<br> D = 0.5<br> 0.2<br> 0.1<br> 0.05<br> 0.02<br> 0.01<br> Single pulse<br> - Tranjent Thermal Impedance -°C/W<br>th(t)<br>Z<br>**----- End of picture text -----**<br> TOTAL POWER DISSIPATION vs. CASE TEMPERATURE **==> picture [183 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125 150 175<br>TC - Case Temperature - °C<br> - Total Power Dissipation - WPT<br>**----- End of picture text -----**<br> DRAIN CURRENT vs. CASE TEMPERATURE **==> picture [183 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125 150 175<br>TC - Case Temperature - °C<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br> AVALANCHE CHARACTERISTICS **==> picture [185 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>T = 25 °C<br>1 j<br>Tj = 100 °C<br>T j = 150°C<br>0.1<br>0.1 1 10 100 1000<br>tAV - Time in Avalache - V<br> - Single Avalanche Current - A<br>IAS<br>**----- End of picture text -----**<br> R07DS1629EJ0100 Rev.1.00 Aug.19.2025 Page 3 of 9 RBA200N15YAPF-6UA03 **==> picture [179 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> DRAIN CURRENT vs.<br>DRAIN TO SOURCE VOLTAGE<br>200<br>Tj = 25°C<br>150<br>100<br>VGS = 10 V<br>V GS = 8 V<br>50 VGS = 7 V<br>VGS = 6 V<br>VGS = 5 V<br>0<br>0 0.5 1 1.5 2<br>VDS - Drain to Source Voltage - V<br>DRAIN TO SOURCE ON-STATE RESISTANCE<br>vs. GATE TO SOURCE VOLTAGE<br>10<br>ID = 100 A<br>8 TJ = 175°C<br>TJ = 25°C<br>6<br>4<br>2<br>0<br>0 5 10 15 20<br>VGS - Gate to Source Voltage - V<br>FORWARD TRANSFER CHARACTERISTICS<br>200<br>Tj = 175 °C<br>Tj = 100 °C<br>150 T = 25 °C<br>j<br>Tj = -55 ° C<br>100<br>50<br>VDS = 5 V<br>0<br>1 2 3 4 5 6<br>VGS - Gate to Source Voltage - V<br> - Drain Current - A<br>ID<br> - Drain to Source On-State Resistance - mΩ<br>DS(on)<br>R<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br> DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS **==> picture [181 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> DRAIN TO SOURCE ON-STATE<br>RESISTANCE vs. DRAIN CURRENT<br>10<br>T = 25°C<br>j<br>8 VGS = 5 V<br>VGS = 6 V<br>6 VGS = 7 V<br>VGS = 8 V<br>4 VGS = 10 V<br>2<br>0<br>0 50 100 150 200<br>ID - Drain Current - A<br> - Drain to Source On-State Resistance - mΩ<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [189 x 410] intentionally omitted <==** **----- Start of picture text -----**<br> DRAIN TO SOURCE ON-STATE RESISTANCE<br>vs. JUNCTION TEMPERATURE<br>10<br>8<br>6<br>4<br>2<br>V GS = 10 V<br>I D = 100 A<br>0<br>-75 -25 25 75 125 175<br>Tj - Junction Temperature -°C<br>GATE TO SOURCE THRESHOLD VOLTAGE<br>vs. JUNCTION TEMPERATURE<br>5<br>V DS = V GS<br>4 ID = 2.5 mA<br>ID = 250 µA<br>3<br>2<br>1<br>0<br>-75 -25 25 75 125 175<br>Tj - Junction Temperature -°C<br> - Drain to Source On-State Resistance - mΩ<br>DS(on)<br>R<br> - Gate to Source Thereshold Voltage - V<br>GS(th)<br>V<br>**----- End of picture text -----**<br> R07DS1629EJ0100 Rev.1.00 Aug.19.2025 Page 4 of 9 RBA200N15YAPF-6UA03 **==> picture [183 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> CAPACITANCE vs.<br>DRAIN TO SOURCE VOLTAGE<br>10000<br>1000<br>C iss<br>100 Coss<br>Crss<br>V GS = 0 V<br>f = 100 kHz<br>10<br>0 50 100 150<br>VDS - Drain to Source Voltage - V<br> - Capacitance - pF<br>rss<br>C<br>oss ,<br>C<br>iss ,<br>C<br>**----- End of picture text -----**<br> SOURCE TO DRAIN DIODE FORWARD VOLTAGE **==> picture [185 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>VGS = 0 V<br>Tj = 175 °C<br>150<br>Tj = 100 °C<br>T = 25 °C<br>j<br>100 T j = -55 ° C<br>50<br>0<br>0 0.4 0.8 1.2<br>VF(S-D) - Source to Drain Forward Voltage - V<br> - Diode Forward Current - AIF<br>**----- End of picture text -----**<br> **==> picture [190 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> DYNAMIC INPUT/OUTPUT CHARACTERISTICS<br>10<br>8<br>6<br>4<br>VDD = 75 V<br>2<br>ID = 50 A<br>T = 25 °C<br>j<br>0<br>0 20 40 60 80 100<br>Qg - Gate Charge - nC<br>DRAIN-SOURCE BREAKDOWN BOLTAGE<br>170<br>160<br>150<br>140<br>130<br>VGS = 0 V<br>I D = 10 mA<br>120<br>-75 -25 25 75 125 175<br>Tj - Junction Temprature -°C<br> - Gate to Source Voltage - V<br>GS<br>V<br> - Drain to Source Voltage - V<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br> R07DS1629EJ0100 Rev.1.00 Aug.19.2025 Page 5 of 9 RBA200N15YAPF-6UA03 ## **Test Circuit** **==> picture [419 x 634] intentionally omitted <==** **----- Start of picture text -----**<br> Avalanche<br>Test Circuit Waveform<br>L V(BR)DSS<br>IAS<br>ID<br>VDD<br>RG VDD 0 VDS<br>D.U.T.<br>VGS<br>VGS<br>0<br>EAS = [1] 2 ・ V(BR)DSS<br>2 [・L・] [I][AS] V(BR)DSS - VDD<br>Switching Time<br>Test Circuit Waveform<br>RL<br>90%<br>VGS 10%<br>RG D.U.T. VDD VDS 90% 90%<br>1 0% 10%<br>VGS<br>td(on) tr td(off) tf<br>Gate Charge<br>Test Circuit Waveform<br>RL<br>Qg VGS<br>IG<br>D.U.T. VDD<br>Vplateau<br>VGS<br>Qgs Qgd<br>Reverse Recovery<br>Test Circuit Waveform<br>IF<br>IF<br>D.U.T.<br>L<br>trr<br>di/dt<br>RG VDD 0 Qrr<br>VGS<br>**----- End of picture text -----**<br> R07DS1629EJ0100 Rev.1.00 Aug.19.2025 Page 6 of 9 RBA200N15YAPF-6UA03 ## **Package Dimensions** **==> picture [398 x 443] intentionally omitted <==** **----- Start of picture text -----**<br> E DETAIL. A<br>E1<br>E2<br>0.20<br>e b 0.25 M c Mass : 0.85 g<br>DIMENSION (mm)<br>SYMBOL<br>MIN NOM MAX<br>A 2.20 2.30 2.35<br>A1 0.01 - 0.16<br>A3 - 0.5 -<br>b 0.60 0.70 0.85<br>c 0.45 0.50 0.65<br>D 10.00 10.10 10.30<br>D1 - 5.67 -<br>D2 - 2.00 -<br>D3 - 5.05 -<br>D4 5.00 5.05 5.13<br>E 9.70 9.90 10.10<br>E1 - 9.46 -<br>Lp E2 - 8.30 -<br>e 1.20BSC<br>DETAIL. A<br>H 14.80 15.00 15.20<br>L 2.25 2.45 2.65<br>Lp 1.30 1.50 1.70<br>D4<br>D D1 D2 H<br>D3<br>L<br>A3<br>A A1<br>**----- End of picture text -----**<br> ## **Mount pad** **==> picture [187 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 1.20<br>Unit : mm<br>2.85<br>6.925<br>6.925<br>**----- End of picture text -----**<br> R07DS1629EJ0100 Rev.1.00 Aug.19.2025 Page 7 of 9 RBA200N15YAPF-6UA03 ## **Ordering Information** |**Ordering Information**||| |---|---|---| |**Part No.**|Packing|**Quantity**| |RBA200N15YAPF-6UA03#KB0|Taping|1300pcs/reel| ## **Packing Specification** **==> picture [362 x 438] intentionally omitted <==** **----- Start of picture text -----**<br> Feed direction<br>P0 P2 P Φ D0 T<br>1pin<br>Φ D1<br>T<br>Product orientation<br>A0 Unit : mm<br>W1 Symbol Dimension<br>W 24<br>P 16<br>P0 4<br>P2 2<br>A0 10.4<br>B0 15.5<br>Tape Dimension B1 10.0<br>K0 2.65<br>F 11.5<br>E 1.75<br>D0 1.5<br>G D1 1.5<br>T 0.4<br>A 330<br>2.3 W2 Reel Dimension N 100<br>W1 25.4<br>W2 29.4<br>13.5<br>Detail.G<br>E<br>F<br>W<br>B1 B0<br>K0<br>N A<br>**----- End of picture text -----**<br> Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS1629EJ0100 Rev.1.00 Aug.19.2025 Page 8 of 9 ## **Notice** 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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Updated at March 31, 2026
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