RB521S30T1G

## RB521S30T1G, NSVRB521S30T1G, RB521S30T5G 

## Schottky Barrier Diode 

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. 

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## **30 V SCHOTTKY BARRIER DIODE** 

## **Features** 

- Extremely Fast Switching Speed 

- Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA 

**SOD−523 CASE 502** 

- Low Reverse Current 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

1 2 CATHODE ANODE 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* **MARKING DIAGRAM MAXIMUM RATINGS** 5M M **Rating Symbol Value Unit** 1 2 Reverse Voltage VR 30 Vdc Forward Current DC IF 200 mA 5M = Device Code M = Date Code* Peak Forward Surge Current (Note 1) IFSM 1.0 A = Pb−Free Package ESD Rating: Class 1C per Human Body Model (Note: Microdot may be in either location) ESD Rating: Class C per Machine Model ~~oS~~ *Date Code orientation may vary depending upStresses exceeding those listed in the Maximum Ratings table may damage the on manufacturing location. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **ORDERING INFORMATION** 1. 60 Hz for 1 cycle. 

(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 

**ORDERING INFORMATION Device Package Shipping**[†] RB521S30T1G SOD−523 4 mm Pitch (Pb−Free) 3,000/Tape & Reel NSVRB521S30T1G SOD−523 **4 mm Pitch** (Pb−Free) **3,000/Tape & Reel** RB521S30T5G SOD−523 2 mm Pitch (Pb−Free) 8,000/Tape & Reel ~~==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation FR−5 Board,<br>(Note 2)<br>TA= 25°C<br>Derate above 25°C|PD|200<br>1.57|mW<br>mW/°C|
|Thermal Resistance,<br>Junction−to−Ambient|R JA|635|°C/W|
|Junction and Storage Temperature<br>Range|TJ, Tstg|−55 to +125|°C|



2. FR−5 Minimum Pad. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **RB521S30T1/D** 

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© Semiconductor Components Industries, LLC, 2015 **November, 2015 − Rev. 9** 

**RB521S30T1G, NSVRB521S30T1G,  RB521S30T5G** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

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Characteristic Symbol Min Typ Max Unit<br>Reverse Leakage (VR = 10 V) IR − − 30.0 � A<br>Forward Voltage (IF = 200 mA) VF − − 0.50 Vdc<br>1<br>T A  = 125 ° C<br>100m<br>10m TA = 75 ° C<br>1m<br>100 �<br>T A  = 25 ° C<br>10 �<br>TA = −25 ° C<br>1 �<br>0 0.1 0.2 0.3 0.4 0.5 0.6<br>VF, FORWARD VOLTAGE (V)<br>Figure 1. Forward Characteristics<br>10m<br>1m<br>TA = 125 ° C<br>100 �<br>TA = 75 ° C<br>10 �<br>1 � TA = 25 ° C<br>100n<br>TA = −25 ° C<br>10n<br>1n<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Reverse Characteristics<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, FORWARD CURRENT (A)<br>IF<br>, REVERSE CURRENT (A)<br>IR<br>, TOATAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 3. Total Capacitance** 

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**RB521S30T1G, NSVRB521S30T1G,  RB521S30T5G** 

## **PACKAGE DIMENSIONS** 

**SOD−523** CASE 502 ISSUE E 

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−X−<br>D<br>−Y−<br>— —<br>E<br>1 2<br>2X b rq<br>0.08 M X Y<br>TOP VIEW<br>A<br>id<br>c J, HE<br>SIDE VIEW<br>aoe 2X L<br>2X L2<br>fees<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


NOTES: 

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 

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4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-<br>TRUSIONS, OR GATE BURRS.<br>MILLIMETERS<br>DIM MIN NOM MAX<br>A 0.50 0.60 0.70<br>b 0.25 0.30 0.35<br>c 0.07 0.14 0.20<br>D 1.10 1.20 1.30<br>E 0.70 0.80 0.90<br>H E 1.50 1.60 1.70<br>L 0.30 REF<br>L2 0.15 0.20 0.25<br>====<br>STYLE 1:<br>PIN 1. CATHODE (POLARITY BAND)<br>2. ANODE<br>**----- End of picture text -----**<br>


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RECOMMENDED<br>SOLDERING FOOTPRINT*<br>2X 1.80<br>0.48 2X<br>0.40<br>Teal,<br>PACKAGE ao<br>OUTLINE DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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## **LITERATURE FULFILLMENT** : 

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**RB521S30T1/D** 

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