# Small Signal Schottky Diode, Single, 40 V, 1 A, 510 mV, 30 A, 150 °C

![Product image](https://novapart.co/image/farnell:1680023/)

**URL**: https://novapart.co/products/RB160M-40TR/small-signal-schottky-diode-single-40-v-1-a-510-mv
**SKU**: RB160M-40TR
**Manufacturer**: ROHM
**Price**: €0.0810
**Stock**: 10+

## Description

Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):1A; Forward Voltage VF Max:510mV; Forward Surge Current Ifsm Max:30A; Operating Temperature Max:150°C; Diode Ca

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (17-Jan-2023) |
| No. Of Pins | 2Pins |
| Product Range | RB160 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOD-123 |
| Diode Configuration | Single |
| Forward Voltage Max | 510mV |
| Forward Surge Current | 30A |
| Reverse Recovery Time | - |
| Average Forward Current | 1A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1680023/)

Data Sheet EE 

## Schottky Barrier Diode 

## **RB160M-40** 

##  **Applications** 

General rectification 

##  **Features** 

1)Small power mold type.（PMDU） 2)Low IR 

3)High reliability 

##  **Construction** 

Silicon epitaxial 

**==> picture [292 x 352] intentionally omitted <==**

**----- Start of picture text -----**<br>
 Dimensions  (Unit :  mm)  Land size figure  (Unit : mm)<br>0.1±0.1<br>1.6±0.1     0.05 1.2<br>—<br>PMDU<br>zl - aa<br>0.9±0.1  Structure<br>ROHM : PMDU - 0.8±0.1 || Le<br>JEDEC :SOD-123<br>Manufacture Date<br> Taping specifications  (Unit : mm)<br>rT 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1<br>1.81±0.1 —— 4.0±0.1 φ1.0±0.1 ao<br>1.5MAX<br>0.85<br>3.05<br>① 2.6±0.1 3.5±0.2<br>1.75±0.1<br>3.5±0.05 8.0±0.2<br>3.71±0.1<br>**----- End of picture text -----**<br>


##  **Absolute maximum ratings** (Ta=25°C) 

|**Absolute maximum ratingsgss** (Ta=25°C)Ta=25°C))||||
|---|---|---|---|
|Parameter|Symbol<br>~~—~~|Limits<br>~~—~~|Unit|
|Reverse voltage(repetitive)|VRM<br>~~—~~|40<br>~~—~~|V|
|Reverse voltage(DC)|VR<br>~~————~~|40<br>~~————~~|V|
|Average rectified forward current|Io<br>~~————~~|1<br>~~————~~|A|
|Forward current surgepeak（60Hz・1cyc）|IFSM<br>~~—~~|30<br>~~—~~|A|
|Junction temperature|Tj<br>~~—~~|150<br>~~—~~|C|
|Storage temperature|Tstg<br>~~—~~|40 to150<br>~~—~~|C|



(*1)Mounted on epoxy board. 180°Half sine wave 

##  **Electrical characteristic** (Ta=25°C) 

|**Electrical characteristic** (Ta=25°C)Ta=25°C))|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Forward voltage|VF|-|0.46|0.51|V|IF=1.0A|
|Reverse current|IR|-|4.0|30|μA|VR=40V|



www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

1/3 

**2011.04 - Rev.E** 

Data Sheet 

**RB160M-40** 

**==> picture [473 x 613] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>Ta=75℃ 10000 Ta=125℃ 1000 f=1MHz<br>1000<br>Ta=125℃ Ta=75℃<br>100 100<br>Ta=150℃ 100<br>Ta=25℃ 10 Ta=25℃<br>Ta=-25℃ 1<br>10 10<br>0.1<br>Ta=-25℃<br>0.01<br>1 0.001 1<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30<br>FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)<br>VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS<br>480 30 300<br>470 Tan=30pcsVF==25℃1A 25 TanVR=30pcs==25℃40V 290280 Taf=1MHzVR==25℃0V<br>270 n=10pcs<br>20 AVE:279.7pF<br>460 260<br>15 250<br>450 240<br>AVE:454.3mV 10 AVE:4.08uA 230<br>440 220<br>5<br>210<br>430 0 200<br>VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP<br>200 30 100<br>Ta=25℃<br>Ifsm 1cyc 25 IF=0.5A<br>150 IR=1A 80<br>Irr=0.25*IR<br>8.3ms 20 n=10pcs<br>60<br>100 15<br>40<br>10<br>Ifsm<br>50<br>AVE:83.0A 5 AVE:10.4ns 20 8.3ms 8.3ms<br>1cyc<br>0 0 0<br>1 10 100<br>trr DISPERSION MAP NUMBER OF CYCLES<br>IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS<br>Mounted on epoxy board<br>200 1000 IM=10mA IF=0.5A 1<br>0.9<br>Rth(j-a)<br>Ifsm 0.8 D=1/2<br>150 t 100 1m s time<br>0.7<br>300us<br>0.6 DC<br>100 10 Rth(j-c) 0.5 Sin(θ＝180)<br>0.4<br>0.3<br>50 1 0.2<br>0.1<br>0 0<br>0.1 1 10 100 0.10.001 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 2<br>TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED<br>IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENT：Io(A)<br>Io-Pf CHARACTERISTICS<br>TERMINALS:Ct(pF)<br>FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN<br>TERMINALS:Ct(pF)<br>FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN<br>PEAK SURGE PEAK SURGE<br>FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A)<br>REVERSE RECOVERY TIME:trr(ns)<br>PEAK SURGE TRANSIENT<br>FORWARD POWER DISSIPATION:Pf(W)<br>FORWARD CURRENT:IFSM(A)<br>THAERMAL IMPEDANCE:Rth (℃/W)<br>**----- End of picture text -----**<br>


www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

2/3 

**2011.04 - Rev.E** 

Data Sheet 

**RB160M-40** 

**==> picture [471 x 300] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.05 3 3<br>0.04 2.5 0A0V VRIo 2.5 0A0V VRIo<br>0.03 2 DC t T DVR=20VTj==t/T150℃ 2 DC t T DTVR=20Vj==150℃t/T<br>DC 1.5 1.5<br>0.02 D=1/2 D=1/2<br>D=1/2<br>1 1<br>0.01 Sin(θ＝180)<br>0.5 Sin(θ＝180) 0.5 Sin(θ＝180)<br>0<br>0 10 20 30 40 0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>REVERSE VOLTAGE:VR(V) AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:Tc(℃)<br>VR-PR CHARACTERISTICS Derating Curveﾞ(Io-Ta) Derating Curveﾞ(Io-Tc)<br>30<br>No break at 30kV<br>25<br>20<br>15<br>10<br>5<br>AVE:7.30kV<br>0<br>C=200pF C=100pF<br>R=0Ω R=1.5kΩ<br>ESD DISPERSION MAP<br>(W)<br>R<br>REVERSE POWER DISSIPATION:P AVERAGE RECTIFIED AVERAGE RECTIFIED<br>FORWARD CURRENT:Io(A) FORWARD CURRENT:Io(A)<br>ELECTROSTATIC<br>DISCHARGE TEST ESD(KV)<br>**----- End of picture text -----**<br>


www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

3/3 

**2011.04 - Rev.E** 

Notice 

## N o t e s 

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

## ROHM  Customer Support System 

http://www.rohm.com/contact/ 

www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

R1120A 



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