# Power MOSFET, N Channel, 600 V, 30 A, 0.115 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2630119/)

**URL**: https://novapart.co/products/R6030KNZ1C9/power-mosfet-n-channel-600-v-30-a-0115-ohm-to-247
**SKU**: R6030KNZ1C9
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 305W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 305W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.115ohm |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.115ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2630119/)

Datasheet 

Nch 600V 30A Power MOSFET 

## R6030KNZ1 

## **l Outline** 

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|||
|---|---|
|VDSS|600V|
|RDS(on)(Max.)|0.130Ω|
|ID|±30A|
|PD|305W|

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TO-247 

## **l Inner circuit** 

## **l Features** 

1) Low on-resistance. 

2) Ultra fast switching speed. 

3) Parallel use is easy. 

4) Pb-free lead plating ; RoHS compliant 

## **l Packaging specifications** 

## **l Application** 

## Switching 

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|||
|---|---|
|Packing|Tube|
|Reel size (mm)|-|
|Tape width (mm)|-|
|Type|
|Basic ordering unit (pcs)|450|
|Taping code|C9|
|Marking|R6030KNZ1|

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**l Absolute maximum ratings** (Ta = 25°C ,unless otherwise specified) 

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||||||
|---|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|Drain - Source voltage|VDSS|600|V|
|Continuous drain current  (Tc = 25°C)|ID|[*1]|±30|A|
|Pulsed drain current|IDP|[*2]|±90|A|
|static|±20|V|
|Gate - Source voltage|VGSS|
|AC(f＞1Hz)|±30|V|
|Avalanche current, single pulse|IAS|5.2|A|
|Avalanche energy, single pulse|EAS|[*3]|636|mJ|
|Power dissipation  (Tc = 25°C)|PD|305|W|
|Junction temperature|Tj|150|℃|
|Operating junction and storage temperature range|Tstg|-55 to +150|℃|

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www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Thermal resistance** 

||||Values|||
|---|---|---|---|---|---|
|Parameter|Symbol||||Unit|
|||Min.|Typ.|Max.||
|Thermal resistance, junction - case|RthJC*4|-|-|0.41|℃/W|
|Thermal resistance, junction - ambient|RthJA|-|-|30|℃/W|
|Soldering temperature, wavesoldering for 10s|Tsold|-|-|265|℃|



## **l Electrical characteristics** (Ta = 25°C) 

|**lElectrical characteristics** (Ta = 25°C)Ta = 25°C)a = 25°C)= 25°C)|(Ta = 25°C)Ta = 25°C)a = 25°C)= 25°C))||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Drain - Source breakdown<br>voltage|V(BR)DSS|VGS= 0V, ID= 1mA|600|-|-|V|
|Zero gate voltage<br>drain current|IDSS|VDS= 600V, VGS= 0V<br>Tj=  25°C<br>Tj=  125°C|-<br>-|-<br>-|100<br>1000|μA|
|Gate - Source leakage current|IGSS|VGS= ±20V, VDS= 0V|-|-|±100|nA|
|Gate threshold voltage|VGS(th)|VDS= 10V, ID= 1mA|3|-|5|V|
|Static drain - source<br>on - state resistance|RDS(on)*5|VGS= 10V, ID= 14.5A<br>Tj=  25°C<br>Tj=  125°C|-<br>-|0.115<br>0.24|0.130<br>-|Ω|
|Gate resistance|RG|f = 1MHz, open drain|-|2.1|-|Ω|



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Datasheet 

## **l Electrical characteristics** (Ta = 25°C) 

|**lElectrical characteristics** (Ta = 25°C)Ta = 25°C)a = 25°C)= 25°C)|(Ta = 25°C)Ta = 25°C)a = 25°C)= 25°C))||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Forward Transfer<br>Admittance||Yfs|*5|VDS= 10V, ID= 15A|10|20|-|S|
|Input capacitance|Ciss|VGS= 0V<br>VDS= 25V<br>f = 1MHz|-|2350|-|pF|
|Output capacitance|Coss||-|2000|-||
|Reverse transfer capacitance|Crss||-|140|-||
|Turn - on delay time|td(on)*5|VDD ⋍300V, VGS= 10V<br>ID= 15A<br>RL ⋍20Ω<br>RG= 10Ω|-|36|-|ns|
|Rise time|tr*5||-|75|-||
|Turn - off delay time|td(off)*5||-|90|-||
|Fall time|tf*5||-|45|-||



## **l Gate charge characteristics** (Ta = 25°C) 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Total gate charge|Qg*5|VDD ⋍300V<br>ID= 30A<br>VGS= 10V|-|56|-|nC|
|Gate - Source charge|Qgs*5||-|18|-||
|Gate - Drain charge|Qgd*5||-|23|-||
|Gate plateau voltage|V(plateau)|VDD ⋍300V, ID= 30A|-|6.3|-|V|



- *1 Limited only by maximum channel temperature allowed. 

- *2 Pw ≤ 10μs, Duty cycle ≤ 1% 

- *3 L≒50mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ 

- *4 TC=25℃ 

*5 Pulsed 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

**l Body diode electrical characteristics** (Source-Drain) (Ta = 25°C) 

|Parameter|Symbol<br>~~i~~|Conditions<br>~~i~~|Values<br>~~|~~|Values<br>~~|~~|Values<br>~~|~~|Unit|
|---|---|---|---|---|---|---|
||||Min.<br>~~|~~<br>~~ee~~|Typ.<br>~~|~~<br>~~ee~~|Max.<br>~~|~~<br>~~ee~~||
|Continuous forward<br>current|IS*1|TC= 25℃<br>~~ee~~|-|-|30|A|
|Pulse forward current|ISP*2<br>~~a~~||-<br>~~ee~~|-<br>~~ee~~|90<br>~~ee~~|A<br>~~ee~~|
|Forward voltage|VSD*5<br>~~a~~<br>~~oe~~|VGS= 0V, IS= 30A<br>~~ee~~<br>~~—~~|-<br>~~ee~~<br>~~—~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|1.5<br>~~ee~~<br>~~|~~|V<br>~~ee~~|
|Reverse recovery time|trr<br>~~a~~<br>~~oe~~<br>~~oe~~|IS= 30A<br>di/dt = 100A/μs<br>~~ee ~~<br>~~—~~|-<br> ~~ee ~~<br>~~—~~<br>~~|~~<br>~~|~~|517<br> ~~ee ~~<br>~~|~~<br>~~|~~|-<br> ~~ee~~<br>~~|~~<br>~~|~~|ns<br>~~ee~~|
|Reverse recovery charge|Qrr<br>~~oe~~<br>~~oe~~||-<br>~~—~~<br>~~|~~<br>~~|~~|9.6<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~|μC|
|Peak reverse recovery current|Irrm<br>~~oe~~<br>~~|~~||-<br>~~|~~<br>~~ot~~|37<br>~~|~~<br>~~ot~~|-<br>~~|~~<br>~~ot~~|A|



## **l Typical transient thermal characteristics** 

|Symbol|Value|Unit|Symbol|Value|Unit|
|---|---|---|---|---|---|
|Rth1|0.190||Cth1|0.0143||
|Rth2|0.429|K/W|Cth2|0.322|Ws/K|
|Rth3|0.250||Cth3|14.7||



www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150911 - Rev.001** 

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Datasheet 

## **l Electrical characteristic curves** 

## Fig.1 Power Dissipation Derating Curve 

## Fig.2 Maximum Safe Operating Area 

Fig.3 Avalanche Energy Derating Curve vs. Junction Temperature 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Electrical characteristic curves** 

Fig.4 Typical Output Characteristics(I) 

## Fig.5 Typical Output Characteristics(II) 

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Datasheet 

## **l Electrical characteristic curves** 

Fig.6 Breakdown Voltage vs. Junction Temperature 

Fig.8 Gate Threshold Voltage vs. Junction Temperature 

Fig.7 Typical Transfer Characteristics 

Fig.9 Forward Transfer Admittance vs. Drain Current 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Electrical characteristic curves** 

Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage 

Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature 

Fig.12 Static Drain - Source On - State Resistance vs. Drain Current(l) 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Electrical characteristic curves** 

Fig.13 Typical Capacitance vs. Drain - Source Voltage 

Fig.14 Switching Characteristics 

Fig.15 Dynamic Input Characteristics 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Datasheet 

## **l Electrical characteristic curves** 

Fig.16 Inverse Diode Forward Current 

vs. Source - Drain Voltage 

Fig.17 Reverse Recovery Time vs. Inverse Diode Forward Current 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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**R6030KNZ1** 

Datasheet 

## **l Measurement circuits** 

Fig.1-1 Switching Time Measurement Circuit 

Fig.2-1 Gate Charge Measurement Circuit 

Fig.3-1 Avalanche Measurement Circuit 

Fig.4-1 dv/dt Measurement Circuit 

Fig.5-1 dv/dt Measurement Circuit 

## Fig.1-2 Switching Waveforms 

Fig.2-2 Gate Charge Waveform 

Fig.3-2 Avalanche Waveform 

Fig.4-2 dv/dt Waveform 

Fig.5-2 dv/dt Waveform 

www.rohm.com 

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© 2015 ROHM Co., Ltd. All rights reserved. 

**R6030KNZ1** 

Datasheet 

## **l Dimensions** 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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Notice 

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Notes<br>1) The information contained herein is subject to change without notice.<br>2) Before you use our Products, please contact our sales representative and verify the latest specifica-<br>tions:<br>3) Although ROHM is continuously working to improve product reliability and quality, semicon-<br>ductors can break down and malfunction due to various factors.<br>Therefore, in order to prevent personal injury or fire arising from failure, please take safety<br>measures such as complying with the derating characteristics, implementing redundant and<br>fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no<br>responsibility for any damages arising out of the use of our Poducts beyond the rating specified by<br>ROHM.<br>4) Examples of application circuits, circuit constants and any other information contained herein are<br>provided only to illustrate the standard usage and operations of the Products. The peripheral<br>conditions must be taken into account when designing circuits for mass production.<br>5) The technical information specified herein is intended only to show the typical functions of and<br>examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,<br>any license to use or exercise intellectual property or other rights held by ROHM or any other<br>parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of<br>such technical information.<br>6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-<br>cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in<br>this document.<br>7) The Products specified in this document are not designed to be radiation tolerant.<br>8) For use of our Products in applications requiring a high degree of reliability (as exemplified<br>below), please contact and consult with a ROHM representative : transportation equipment (i.e.<br>cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety<br>equipment, medical systems, servers, solar cells, and power transmission systems.<br>9) Do not use our Products in applications requiring extremely high reliability, such as aerospace<br>equipment, nuclear power control systems, and submarine repeaters.<br>10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with<br>the recommended usage conditions and specifications contained herein.<br>11) ROHM has used reasonable care to ensur the accuracy of the information contained in this<br>document. However, ROHM does not warrants that such information is error-free, and ROHM<br>shall have no responsibility for any damages arising from any inaccuracy or misprint of such<br>information.<br>12) Please use the Products in accordance with any applicable environmental laws and regulations,<br>such as the RoHS Directive. For more details, including ROHS compatibility, please contact a<br>ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting<br>non-compliance with any applicable laws or regulations.<br>13) When providing our Products and technologies contained in this document to other countries,<br>you must abide by the procedures and provisions stipulated in all applicable export laws and<br>regulations, including without limitation the US Export Administration Regulations and the Foreign<br>Exchange and Foreign Trade Act.<br>14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of<br>ROHM.<br>**----- End of picture text -----**<br>


Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

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R1102A 



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