# Power MOSFET, N Channel, 600 V, 20 A, 0.25 ohm, TO-220FM, Through Hole
**URL**: https://novapart.co/products/R6020FNX/power-mosfet-n-channel-600-v-20-a-025-ohm-to-220fm
**SKU**: R6020FNX
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.8600
**Stock**: 100+
**Lead Time**: 190 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.19oh; Available until stocks are exhausted Alternative available
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 85W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FM |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.25ohm |
| Gate Source Threshold Voltage Max | 5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2706602/)
**Nch 600V 20A Power MOSFET**
Datasheet
## R6020FNX
## **Outline**
**==> picture [514 x 660] intentionally omitted <==**
**----- Start of picture text -----**
||||||
|---|---|---|---|---|
|VDSS|600V|TO-220FM|
|RDS(on) (Max.)|0.25|
|ID|20A|
|PD|85W|(1)|(2)|(3)|
||Features||Inner circuit|
|1) Fast reverse recovery time (trr).|(2)|
|2) Low on-resistance.|(1) Gate|
|(2) Drain|
|3) Fast switching speed.|*1|(3) Source|
|(1)|
|4) Gate-source voltage (VGSS) guaranteed to be 30V.|*1 Body Diode|
|5) Drive circuits can be simple.|(3)|
|6) Parallel use is easy.||Packaging specifications|
|7) Pb-free lead plating ; RoHS compliant|Packaging|Bulk|
|-|
|Reel size (mm)|
|-|
||Application|Tape width (mm)|
|Type|
|Basic ordering unit (pcs)|500|
|Switching Power Supply|
|-|
|Taping code|
|Marking|R6020FNX|
||Absolute maximum ratings|(Ta = 25°C)|
|Parameter|Symbol|Value|Unit|
|Drain - Source voltage|VDSS|600|V|
|Tc = 25°C|ID *1|20|A|
|Continuous drain current|
|Tc = 100°C|ID *1|9.9|A|
|Pulsed drain current|I|*2|80|A|
|D,pulse|
|Gate - Source voltage|VGSS|30|V|
|Avalanche energy, single pulse|EAS|[*3]|26.7|mJ|
|Avalanche energy, repetitive|EAR *4|3.5|mJ|
|Avalanche current|IAR *3|10|A|
|Power dissipation (Tc = 25°C)|PD|85|W|
|Junction temperature|Tj|150|°C|
|Range of storage temperature|Tstg|55 to 150|°C|
|Reverse diode dv/dt|dv/dt|[*5]|15|V/ns|
**----- End of picture text -----**
www.rohm.com
**2016.02 - Rev.D**
1/13
© 2015 ROHM Co., Ltd. All rights reserved.
Data Sheet
**R6020FNX**
||**Absolute maximum ratings**|**Absolute maximum ratings**|**Absolute maximum ratings**|**Absolute maximum ratings**|**Absolute maximum ratings**|**Absolute maximum ratings**|**Absolute maximum ratings**|**Absolute maximum ratings**|**Absolute maximum ratings**|**Absolute maximum ratings**|
|---|---|---|---|---|---|---|---|---|---|---|
||Parameter|||Symbol||Conditions|||Values|Unit|
||Drain - Source voltage slope|||dv/dt||VDS= 480V, ID= 20A
Tj= 125°C|||50|V/ns|
||**Thermal resistance**
||||||r||||
||Parameter
||||Symbol
||Values
f|||Unit
|
||||||||Min.
|Typ.
|Max.
||
||Thermal resistance, junction - case
||||RthJC
||-
|-
|1.47
|°C/W
|
||Thermal resistance, junction - ambient
||||RthJA
||-
|-
|70
|°C/W
|
||Soldering temperature, wavesoldering for 10s
||||Tsold
||-
|-
|265
|°C
|
||**Electrical characteristics**(Ta= 25°C)
en
||||||
ns||||
||Parameter
|Symbol
|Conditions
m
||||Values
|||Unit
|
||||||||Min.
|Typ.
|Max.
||
||Drain - Source breakdown
voltage
|V(BR)DSS
o
|VGS= 0V, ID= 1mA
De||||600
|-
|-
|V
|
||Drain - Source avalanche
breakdown voltage
|V(BR)DS
|VGS= 0V, ID= 20A
||||-
|700
|-
|V
|
||Zero gate voltage
drain current
t Re
|IDSS
e|Tj= 125°C
VDS= 600V, VGS= 0V
Tj= 25°C
||||-
|1
|100
|A
|
||||||||-
|-
|10
|mA
|
||Gate - Source leakage current
|IGSS
|VGS=30V, VDS= 0V
||||-
|-
|100
|nA
|
||Gate threshold voltage
|VGS (th)
|VDS= 10V, ID= 1mA
||||3
|-
|5
|V
|
||Static drain - source
on - state resistance
|RDS(on)
*6
|Tj= 25°C
Tj= 125°C
VGS= 10V, ID= 10A
||||-
-
|0.19
0.44
|0.25
-
|
|
||Gate input resistance|RG|f = 1MHz, open drain||||-|13.5|-||
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
**2016.02 - Rev.D**
2/13
Data Sheet
**R6020FNX**
## **Electrical characteristics** (Ta = 25°C)
||Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|---|
|||||Min.|Typ.|Max.||
||Transconductance|gfs
*6|VDS= 10V, ID= 10A|7|13|-|S|
||Input capacitance
|Ciss
|f = 1MHz
VDS= 25V
VGS= 0V
|-
|2040
|-
|pF
r|
||Output capacitance
|Coss
||-
|1660
|-
||
||Reverse transfer capacitance
|Crss
||-
|70
|-
||
||Effective output capacitance,
energy related
|Co(er)
|VGS= 0V
VDS= 0V to 480V
|-
|107
|-
|pF
|
||Effective output capacitance,
time related
|Co(tr)
||-
e
|108
|-
||
||Turn - on delay time
|td(on)
*6
|ID= 10A
RG= 10
RL= 30
VDD⋍300V, VGS= 10V
men
|-
|50
|-
|ns
|
||Rise time
|tr
*6
||-
|70
|-
||
||Turn - off delay time
|td(off)
*6
||-
|170
|340
||
||Fall time
|tf
*6
||-
|40
|80
||
||**Gate Charge characteristics**(Ta= 25C)
m
es|||
||||
||Parameter
|Symbol
o
|Conditions
D|Values
|||Unit
|
|||||Min.
|Typ.
|Max.
||
||Total gate charge
|Qg
*6
|ID= 20A
VDD⋍300V
VGS= 10V
w|-
|65
|-
|nC
|
||Gate - Source charge
|Qgs
*6
||-
|15
|-
||
||Gate - Drain charge
|Qgd
*6
||-
|25
|-
||
||Gate plateau voltage
t
|V(plateau)
|VDD⋍300V, ID= 20A
|-
|7.8
|-
|V
|
||*1 Limited only by maximum temperature allowed.
*2 Pw10s, Duty cycle1%
No
|||
||||
*3 L ⋍ 500H, VDD = 50V, RG = 25, starting Tj = 25°C
*4 L ⋍ 500H, VDD = 50V, RG = 25, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
**2016.02 - Rev.D**
3/13
Data Sheet
**R6020FNX**
## **Body diode electrical characteristics** (Source-Drain)(Ta = 25°C)
|Values|
|---|
|Unit
Parameter
Symbol
Conditions|
|Min.
Max.
Typ.|
|Peak reverse recovery current
Reverse recovery charge
trr
*6
-
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
-
6.3
-
-
0.33
-
C
VSD
*6
VGS= 0V, IS= 20A
Forward voltage
Reverse recovery time
Tc= 25°C
IS= 20A , VGS=0V
di/dt = 100A/us
105
-
-
-
-
Qrr
*6
Irrm
*6
IS *1
ISM *2
75
Rth3
2.17
Cth3
0.549
A/s
-
Tj= 25°C
0.00458
K/W
Ws/K
Rth2
0.579
Cth2
0.0603
0.0789
Cth1
Rth1
Peak rate of fall of reverse
recovery current
dirr/dt
Symbol
Value
**Typical Transient Thermal Characteristics**
1100
Symbol
Value
Unit
Unit
-
-
A
A
A
1.5
V
ns
80
20
135
Not Recommended for
New Designs
monnnnnnnn
nnnnnn
rere
eeeee
!
\
!
Tj
Rth1
Rth,n
T case
!
\
|
\
!
\
|
\
|
PD
|
|\
|
\
!
|
Cthi
Cth2
Cth,n
|
!
!
\
!
\|
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
**2016.02 - Rev.D**
4/13
Data Sheet
**R6020FNX**
## **Electrical characteristic curves**
## Fig.2 Maximum Safe Operating Area
**==> picture [513 x 541] intentionally omitted <==**
**----- Start of picture text -----**
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
120 100
Operation in this
area is limited aii) [xegmacuiilizzasasuil]
100
by RDS(ON) Soe NSE XN
10 rsnauesey lll[MLN
Se ZAAN
80 [2338880010 Titi NTT
PW = 100s
aii ZN NE
60 1 PW = 1ms
ee PW = 10ms TT NTT
40 HEHE ce ENN
0.1 A
a eeBl
20
Ta = 25ºC
hE Single Pulse Fr
[Lr
0 0.01
EF ICT
0 50 100 150 200 0.1 1 10 100 1000
Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
Ta = 25ºC
100 [mmm Single Pulse ||| AU RII
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
10 Rth(ch-a) = 70ºC/W
1
ABUNal
0.1 saan a9 ga
0.01 Geer [Zan] or top D = 1
D = 0.5
D = 0.1
0.001 ianil D = 0.05
D = 0.01
D = Single
CMT
0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
New Designs
Not Recommended for
max. [%]
D [A]
/P D
D Drain Current : I
Power Dissipation : P
(t)
Normalized Transient Thermal Resistance : r
**----- End of picture text -----**
Pulse Width : PW [s]
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**2016.02 - Rev.D**
5/13
Data Sheet
**R6020FNX**
## **Electrical characteristic curves**
## Fig.4 Avalanche Current vs Inductive Load
## Fig.5 Avalanche Power Losses
**==> picture [513 x 591] intentionally omitted <==**
**----- Start of picture text -----**
5000
14 TVaDD = 25ºC= 50V , RG = 25 4500 Ta = 25ºC
12 VGF = 10V , VGR = 0V 4000
3500
10
3000
8
2500
6 2000
1500
4
1000
2
500
0 0
0.01 0.1 1 10 100 1.0E+04 1.0E+05 1.0E+06
Coil Inductance : L [mH] Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Junction Temperature : Tj [ºC]
New Designs
Not Recommended for
[W]
[A] AR
AR
Avalanche Current : I
Avalanche Power Losses : P
max. [%]
AS
/ E
AS
Avalanche Energy : E
**----- End of picture text -----**
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**2016.02 - Rev.D**
6/13
Data Sheet
**R6020FNX**
## **Electrical characteristic curves**
## Fig.7 Typical Output Characteristics(I)
## Fig.8 Typical Output Characteristics(II)
**==> picture [513 x 592] intentionally omitted <==**
**----- Start of picture text -----**
20 20
18 VVGSGS=8.0V=10.0V VGS=6.5V 18 Tpulseda=25ºC VGS=10.0V
16 16 VGS=8.0V
14 14
12 VGS=7.0V 12 VGS=7.0V
10 10
8 8 VGS=6.5V
VGS=6.0V
6 6
4 4
2 Tpulseda=25ºC 2 VGS=6.0V
0 0
0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output Fig.10 Tj = 150°C Typical Output
Characteristics(I) Characteristics(II)
20 5
VGS = 7.0V TPulseda = 150ºC TPulseda = 150ºC
VGS = 10V 4
15 VGS = 8.0V VGS = 6.5V VGS = 10V
VGS = 6.0V
3
10 VGS = 6.0V
2 VGS = 5.0V
VGS = 5.5V
5
VVGS GS = 5.0V= 5.0V 1
VGS = 4.5V VGS = 4.5V
0 0
0 10 20 30 40 50 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
New Designs
Not Recommended for
[A]
[A] D
D Drain Current : I
Drain Current : I
[A] [A]
D D
Drain Current : I Drain Current : I
**----- End of picture text -----**
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**2016.02 - Rev.D**
7/13
Data Sheet
**R6020FNX**
## **Electrical characteristic curves**
**==> picture [513 x 616] intentionally omitted <==**
**----- Start of picture text -----**
Fig.11 Breakdown Voltage Fig.12 Typical Transfer Characteristics
vs. Junction Temperature
900 100
VDS=10V
850 pulsed
10
800
750
1
700 Ta = 125ºC
Ta = 75ºC
0.1 Ta = 25ºC
650 Ta = 25ºC
600
0.01
550
500 0.001
-50 0 50 100 150 0.0 2.0 4.0 6.0 8.0
Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage Fig.14 Transconductance vs. Drain Current
vs. Junction Temperature
6 100
VDS=10V VDS=10V
ID=1mA pulsed
pulsed
5 10
4 1
Ta = 25ºC
Ta = 25ºC
3 0.1 Ta = 75ºC
Ta = 125ºC
2 0.01
-50 0 50 100 150 0.01 0.1 1 10
Junction Temperature : Tj [°C] Drain Current : ID [A]
New Designs
Not Recommended for
[V]
(BR)DSS
[A]
D
Drain Current : I
Drain - Source Breakdown Voltage : V
[V]
[S]
GS(th) fs
Gate Threshold Voltage : V Transconductance : g
**----- End of picture text -----**
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**2016.02 - Rev.D**
8/13
Data Sheet
**R6020FNX**
## **Electrical characteristic curves**
**==> picture [513 x 625] intentionally omitted <==**
**----- Start of picture text -----**
Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Gate Source Voltage Resistance vs. Junction Temperature
1.0 0.6
0.9 Ta = 25ºC VGS=10V
Pulsed pulsed
0.5
0.8
0.7
0.4
0.6 ID=20A
ID=20A
0.5 0.3
0.4 ID=10A
0.2 ID=10A
0.3
0.2
0.1
0.1
0.0 0
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150
Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
10
VGS = 10V
Pulsed
1
0.1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.01
0.1 1 10 100
Drain Current : ID [A]
New Designs
Not Recommended for
]
]
[
DS(on) [
DS(on)
: R
: R
Static Drain - Source On-State Resistance
Static Drain - Source On-State Resistance
]
[
DS(on)
: R
Static Drain - Source On-State Resistance
**----- End of picture text -----**
Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
**2016.02 - Rev.D**
9/13
Data Sheet
**R6020FNX**
## **Electrical characteristic curves**
**==> picture [513 x 623] intentionally omitted <==**
**----- Start of picture text -----**
Fig.18 Typical Capacitance Fig.19 Coss Stored Energy
vs. Drain - Source Voltage
100000 18
Tf = 1MHza = 25ºC 16 Ta = 25ºC
10000 VGS = 0V 14
Ciss
12
1000
10
8
100 Coss
6
4
10 Crss
2
1 0
0.01 0.1 1 10 100 1000 0 200 400 600
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics
10000 12
VDD≒300V Ta=25ºC
VGS=10V 10 VDD=300V
RG=10 ID=20A
1000 Ta=25ºC Pulsed
td(off) Pulsed 8
100 tf 6
4
t
d(on)
10 tr
2
1 0
0.01 0.1 1 10 100 0 10 20 30 40 50 60 70
Dr ai n Current : ID [A] Total Gate Charge : Qg [nC]
New Designs
Not Recommended for
[uJ]
OSS
Capacitance : C [pF]
Coss Stored Energy : E
[V]
GS
Switching Time : t [ns]
Gate - Source Voltage : V
**----- End of picture text -----**
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
**2016.02 - Rev.D**
10/13
Data Sheet
**R6020FNX**
## **Electrical characteristic curves**
Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current
**==> picture [527 x 691] intentionally omitted <==**
**----- Start of picture text -----**
100 1000
VPulsedGS = 0V Ta=25ºC
VGS=0V
di/dt=100A/s
10
1 100
Ta = 125ºC
Ta = 75ºC
0.1 TTa a = 25ºC= 25ºC
0.01 10
0.0 0.5 1.0 1.5 2.0 0 1 10 100
Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A]
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© 2015 ROHM Co., Ltd. All rights reserved. 11/13 2016.02 - Rev.D
New Designs
Not Recommended for
[A]
S [ns]
rr
Reverse Recovery Time : t
Inverse Diode Forward Current : I
**----- End of picture text -----**
Data Sheet
**R6020FNX**
## **Measurement circuits**
**==> picture [513 x 669] intentionally omitted <==**
**----- Start of picture text -----**
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Pulse width
VGS ID
VDS
RL 50% 90 % 50%
VGS 10%
D.U.T.
VDS
10% 10%
RG VDD
90% 90%
td(on) tr td(off) tf
ton toff
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
VGS ID VG
VDS
RL Qg
IG(Const.) D.U.T. VGS
VDD Qgs Qgd
Charge
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
VGS IAS
VDS
D.U.T. L V(BR)DSS
IAS
RG
VDD
VDD
1 2 V(BR)DSS
EAS = L IAS
2 V(BR)DSS - VDD
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
VGS IAS
VDS
L
D.U.T.
V(BR)DSS
RG VDD IAS
VDD
Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
IF
D.U.T. L trr
IF
0
VDD Irr 10%
DRIVER
MOSFET Irr
RG drr / dt
Irr 90%
Irr 100%
New Designs
Not Recommended for
**----- End of picture text -----**
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**2016.02 - Rev.D**
12/13
Data Sheet
**R6020FNX**
## **Dimensions** (Unit : mm)
|φp
**TO-220FM**
Not|φp
**TO-220FM**
Not|φp
**TO-220FM**
Not|||||||F
A
|F
A
|F
A
|F
A
|F
A
|F
A
|F
A
|F
A
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||φp
||b1
||||||A
||||||||
||||||||||||||||||
||||||||||F
|||||A4
|||
||||||||||||||||||
||||||
|
|
||A2
|A
||
|
|
|||
||||||
|
|
||A1
|
||
|||||
||||||
|
|||||||||||
||||||
|
|
||L
mm
|||
|||||
||||||e
|
|||||||||||
||||||||b
x
A
||||||||||
||||||
|
|||||||||||
||||DIM
||
|MILIMETERS
|||||INCHES
||||||
||||||
|MIN
||MAX
|||MIN
|||||MAX
|
||||A
||16.60
|||17.60
|||0.654
|||||0.693
|
||||A1
||1.80
|||2.20
|||0.071
|||||0.087
|
||||A2
||14.80
|||15.40
|||0.583
|||||0.606
|
||||A4
||6.80
|||7.20
|||0.268
|||||0.283
|
||||b
||0.70
|||0.85
|||0.028
|||||0.033
|
||||b1
||1.10
|||1.50
|||0.043
|||||0.059
|
||||c
||0.70
|||0.85
|||0.028
|||||0.033
|
||||D
||9.90
|||10.30
|||0.390
|||||0.406
|
||||E
||4.40
|||4.80
|||0.173
|||||0.189
|
||||e
||2.54
||||||0.100
||||||
||||E1||2.70|||3.00|||0.106|||||0.118|
||||F||2.80|||3.20|||0.110|||||0.126|
||||L||11.50|||12.50|||0.453|||||0.492|
||||p||3.00|||3.40|||0.118|||||0.134|
||||Q||2.10|||3.10|||0.083|||||0.122|
||||x||-|||0.38|||-|||||0.015|
Dimension in mm / inches
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**2016.02 - Rev.D**
13/13
## **Notice**
## **Precaution on using ROHM Products**
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment[(Note 1)] , transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASS `Ⅲ` CLASS `Ⅱ` b CLASS `Ⅲ` CLASS `Ⅲ` CLASS `Ⅳ` CLASS `Ⅲ` 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document.
## **Precaution for Mounting / Circuit board design**
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
> **[Notice-PGA-E ]**
**Rev.003**
© 2015 ROHM Co., Ltd. All rights reserved.
## **Precautions Regarding Application Examples and External Circuits**
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.
**Precaution for Electrostatic** This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). **Precaution for Storage / Transportation** 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. **Precaution for Product Label** A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. **Precaution for Disposition** When disposing Products please dispose them properly using an authorized industry waste company. **Precaution for Foreign Exchange and Foreign Trade act** Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. **Precaution Regarding Intellectual Property Rights** 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. **Other Precaution** 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties.
> **[Notice-PGA-E ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.003**
## Links
- [View this product on Novapart](https://novapart.co/products/R6020FNX/power-mosfet-n-channel-600-v-20-a-025-ohm-to-220fm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/rohm/r6020fnx/mosfet-n-ch-600v-20a-to-220fm/dp/2706602)
---
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