# Power MOSFET, N Channel, 600 V, 15 A, 0.29 ohm, TO-263S, Surface Mount
**URL**: https://novapart.co/products/R6015KNJTL/power-mosfet-n-channel-600-v-15-a-029-ohm-to-263s
**SKU**: R6015KNJTL
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4600
**Stock**: 10+
**Lead Time**: 155 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 184W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263S |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.29ohm |
| Gate Source Threshold Voltage Max | 5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3213677RL/)
## sal ROO TSKNJ
Nch 600V 15A Power MOSFET
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Voss 600V
Rpsvon)(Max. ) 0.290
Ip +15A
Pp 184W
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Datasheet
Outline
TO-263S (2)
SC-83
LPT(S)
G
**----- End of picture text -----**
## @ Outline
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@lnner circuit
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@Features 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; ROHS compliant
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(2)
_} ier
ay 4 1 (3) Source
.
| 1 Body Diode
ie)
(3)
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|||@Packaging|@Packaging|specifications|specifications|specifications||
|---|---|---|---|---|---|---|---|
||||||;||Embossed|
||||Reel||size (mm)|||
|@Application||Type|~~Tape width (mm)~~|||||
|Switching|||Quantity|||(pcs)|1000|
|||||||||
|||||||||
|@Absolute maximum ratings(T= 25°C|,unless otherwise specified)|||||||
|Parameter||Symbol|||||Unit|
|||||||||
|Continuous drain current (T, = 25°C)|||||||A|
|||||||||
||||||||v|
|Gate - Source voltage||Vess||||||
|Avalanche current, single pulse|||||||A|
|Avalanche energy, single pulse|||||||mJ|
|||||||||
|||||||||
|Operatingjunctionandstoragetemperaturerange||||||-55to+150|°C|
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Datasheet
@Thermal resistance
|@Electrical characteristics (T,|= 25°C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions||||Unit|
||||||||
|Drain - Source breakdown||_
_|||||
|Zero gate voltage
draincurrent
~~Gate-Sourceleakagecurrent~~|loss
||Vps = 600V, Ves = OV
=
9K
|T] = 25°C
Tj = 125°C
~~Ves=#20V,Vps=OV~~
~~-~~|~~-=|=~~|~~|=|~~|100 )
1000
~~|e100|~~|) HA
~~nA~~|
|~~Gate-Sourceleakagecurrent~~
~~Gatethresholdvoltage~~||~~Ves=#20V,Vps=OV~~
~~-~~
~~Vos=10V,Ip=1mMA~~|~~-=|=~~
~~3]~~|~~|=|~~
~~3]-|~~|~~|e100|~~
~~|5|~~|~~nA~~
~~|~~
~~V~~|
|~~Gate - Source leakage current~~
~~Gatethresholdvoltage~~||~~Ves = #20V, Vps = OV~~
~~-~~
~~Vos=10V,Ip=1mMA~~|~~- = |=~~
~~3]~~|~~|= |~~
~~3]-|~~|~~| e100 |~~
~~|5|~~|~~nA~~
~~|~~
~~V~~|
|~~Gate threshold voltage~~
Static drain - source
on- stateresistance
~~Gateresistance~~|6
Rosion©)|~~Vos = 10V, Ip = 1mMA~~
Ves = 10V, Ip = 6.5A
=
9K
©)T) = 29°C
Tj = 125°C
~~f=1MHz,opendrain~~
~~-~~|~~3]~~
~~-f~~|~~3] - |~~
0.26 |
0.56
~~f23a]~~|~~| 5 |~~
| 0.29)
-
~~23a]-|~~|~~|~~
~~V~~
~~|~~
~~Q~~|
|~~Gateresistance~~||~~f=1MHz,opendrain~~
~~-~~|~~-f~~|~~f23a]~~|~~23a]-|~~|~~|~~
~~Q~~|
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2/12
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R6015KNJ
Datasheet
@Electrical characteristics (T, = 25°C)
|@Electrical characteristics (T,|= 25°C)||||||
|---|---|---|---|---|---|---|
|Parameter
~~mee~~
~~[ioe~~|~~[ioe frm~~|~~frm[ee~~||||Unit
~~|~~|
||||~~[ee~~|~~[ee~~|~~|~~||
|~~mee~~
~~[ioe~~
~~Inputcapacitance~~|~~[ioe frm~~|~~frm[ee~~
Ves=OV
~~-~~|~~[ee~~
~~--|~~|~~[ee~~
~~|1050)~~|~~|~~
~~1050)-|~~|~~|~~|
|~~mee~~
~~[ioe~~
~~Inputcapacitance~~
~~Outputcapacitance~~|~~[ioe frm~~|~~frm [ee~~
Ves = OV
~~-~~
Vps=25V
~~-~~
~~f= 1MHz~~
~~—-~~
Vpp=300V,Ves=10V~~—-~~|~~[ee~~
~~--|~~
~~--|~~|~~[ee ~~
~~|1050)~~
~~|900)~~|~~|~~
~~1050)-|~~
~~900)-~~|~~|~~
pF
~~|~~|
|~~Input capacitance~~
~~Outputcapacitance~~
~~Reversetransfercapacitance~~|||~~- - |~~
~~--|~~
~~—-|~~|~~| 1050)~~
~~|900)~~
~~|40}~~|~~1050) - |~~
~~900)-~~
~~40}-|~~||
|~~Output capacitance~~
~~Reversetransfercapacitance~~
~~Turn-ondelaytime~~|||~~- - |~~
~~—-|~~
~~—-|~~|~~| 900)~~
~~|40}~~
~~|30|~~|~~900) -~~
~~40}-|~~
~~|-~~||
|~~Reverse transfer capacitance~~
~~Turn-ondelaytime~~
~~Risetime~~||~~f = 1MHz~~
~~—-~~
Vpp = 300V, Ves = 10V ~~—-~~
Ip=7.5A
~~—-~~
Ri~40.20
~~-~~
~~Re = 100~~
~~-~~|~~—- |~~
~~—-|~~
~~—-[a0]~~|~~| 40}~~
~~|30|~~
~~[a0]~~|~~40} - |~~
~~|-~~
~~[a0]~~
~~-|~~|~~|~~
~~|~~
ms
~~|~~|
|~~Turn - on delay time~~
~~Risetime~~
~~Turn-offdelaytime~~|||~~—- |~~
~~—-[a0]~~
~~-|~~|~~| 30 |~~
~~[a0]~~
~~|50}~~|~~| -~~
~~[a0]~~
~~-|~~
~~50}-|~~||
|~~Rise time~~
~~Turn-offdelaytime~~
~~Falltime~~|||~~—- [a0]~~
~~-|~~
~~-|~~|~~[a0]~~
~~|50}~~
~~|15|]~~|~~[a0]~~
~~- |~~
~~50}-|~~
~~|]-|~~||
|~~Turn - off delay time~~
~~Falltime~~|||~~- |~~
~~-|~~|~~| 50}~~
~~|15|]~~|~~50} - |~~
~~|]-|~~||
## @Gate charge characteristics (T, = 25°C)
|Parameter||||||Unit|
|---|---|---|---|---|---|---|
||||||||
|~~Total gate charge~~
~~|~~
~~Gate-Sourcecharge~~|~~|ae|~~|~~|~~Vpp=300V
Ip=15A
~~-~~
~~Ves = 10V~~|~~jars~~
~~-|~~|~~jars |.~~
~~|7|e~~|~~|.~~
~~|e~~|nC|
|~~Total gate charge~~
~~|~~
~~Gate-Sourcecharge~~
~~Gate-Draincharge~~|~~| ae |~~||~~jars~~
~~-|~~
~~fa]~~|~~jars |.~~
~~|7|e~~
~~fa]~~|~~|.~~
~~|e~~
~~fa]oe~~||
|~~Gate - Source charge~~
~~Gate-Draincharge~~|||~~- |~~
~~fa]~~|~~| 7 |e~~
~~fa]~~|~~|e~~
~~fa]oe~~||
|~~Gate - Drain charge~~||~~Ves = 10V~~|~~fa]~~|~~fa]~~|~~fa] oe~~||
*1 Limited only by maximum channel temperature allowed.
*2 Pws 10us, Duty cycle < 1% *3 L=100mH, Vpp=50V, Rg=250, STARTING Tj=25°C
*4 Tc=25°C
*5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm)
*6 Pulsed
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20190527 - Rev.003
R6015KNJ
Datasheet
@Body diode electrical characteristics (Source-Drain) (T, = 25°C)
|Parameter|Symbol|Conditions||||Unit|
|---|---|---|---|---|---|---|
||||||||
|current||Tc = 25°C|||||
||||||||
||||||||
||*|Is
=15A
di/dt = 100A/us|||||
|~~Peakreverserecoverycurrent~~|*||~~foam~~|~~foam|~~|~~|-|~~|~~A~~|
|~~Peakreverserecoverycurrent~~|||~~foam~~|~~foam|~~|~~|-|~~|~~A~~|
**==> picture [493 x 337] intentionally omitted <==**
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®@ Typical transient thermal characteristics
Rint 0.0929 Cr 0.00162
Rin2 0.365 K/W Ciho 0.00548 Ws/K
Rin 0.615 Cin 0.176
! Tj Rth1 Rth,n | T case
' PD !
! ] Cth1 Cth2 | Cth,n ,
! | Tamb
**----- End of picture text -----**
www.rohm.com © 2019 ROHMCo., Ltd. All rights reserved.
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**----- Start of picture text -----**
ROM
4/12 Ror 20190527 - Rev.003
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R6015KNJ
Datasheet
@ Electrical characteristic curves
**==> picture [494 x 599] intentionally omitted <==**
**----- Start of picture text -----**
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
12 00 SS
< Fcc 7 thinaren MME? SC
=x400 epee eR SINS
— 10 bettie 7NIN
a NUTT
a < SE ASN
SSa 80 a Set WAS Lie)<0 cn se
oo = ZT Tp, = 100usXN
a on th=S , Lallipat Mun = at YAN AI TT iit
5 = fe |8!| lew=amef (EENYIN INIT]NEES
=oO Oo2 aeFHF A A Py = 10ms tHnsSENG
Q c PPT TP AT
7 40 = DC
a 6 o, LUMI Ti TEM TN
© 20 LSmde iSesiicmmasaes i
3 ik lige oth
oo Mounted onaFR4 board. |}jjif—
(25mm x 27mm x 0.8mm) | |} iff]
0 0.01
0 50 100 150 200 0.1 1 10 100 1000
Junction Temperature : T; [°C] Drain - Source Voltage : Vps [V]
Fig.3 Avalanche Energy Derating
Curve vs. Junction Temperature
— im
os
x
100
=
2
r [r] > 60 \
oe
: - A |
G40 oN
=
Po
G 20
< q
g 0 ett LLINa
0 25 50 75 100 125 150 175
Junction Temperature : Tj [°C]
**----- End of picture text -----**
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Datasheet
@Electrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(I!)
**==> picture [487 x 229] intentionally omitted <==**
**----- Start of picture text -----**
15 15
faze | ws VAVA, 10V 6.5V
_| Pulsed ov9 | 77
_ nm 7.0V YY 6.5V — _ Wa i=
<= - £ » | 1ge =o HE et
©| tA)fy 2 Eee
g T fier Tl is TT
| Aa a a —
f——
|
0
01 2 3 4 5 0 5 10 15 20 25 30 35 40 45 50
Drain - Source Voltage : Vps [V] Drain - Source Voltage : Vps [V]
**----- End of picture text -----**
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@ Electrical characteristic curves
Fig.6 Breakdown Voltage vs. Junction Temperature
Fig.7 Typical Transfer Characteristics
**==> picture [492 x 557] intentionally omitted <==**
**----- Start of picture text -----**
go 850 |i| tl | pPause
Seo tt || [|e] | & “if
s —| 2 T///
Sc ITAA
> et ere Hf
= 700 —T © TT H- ——
o T, = 75°C
Ze 650ot clrT titi) oO-sa — — Ssffft[y~
en fal ee
oOpp tt [tit] tl | Sg A
——-:--——
oe mae
3 550 Se ————
$c 50oLittt tt 0.001 HHT]
s 50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8
ra)
Junction Temperature : T; [°C] Gate - Source Voltage : Ves [V]
Fig.8 Gate Threshold Voltage vs. Fig.9 Forward Transfer Admittance vs.
Junction Temperature Drain Current
a a a 100 SENG aaasan: astssSsttaaaas Gases ssssstcamaascaserersces
Ving = 10V Er
S ged |a see| TEE meeeea
E rs Se =
:oO @— 40 aiiiimaee tt
en= 4 SSSee
o 4 4 eet etttt
Sy © a |
8 Sfs) , UUMa”aAaTT
= ne] ,
5 2 8 osec tite
7E® i ae es es a oe Se Sn Sas | 8Eon Met77Lett 7a~= 75ee SULAMM
2 Vos = 10V oo ooo oo
w iw tink Coo
ro) i
, leSedj oor COTLIM TTI TI TEI
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100
Junction Temperature : Tj [°C] Drain Current : lp [A]
**----- End of picture text -----**
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Datasheet
@Electrical characteristic curves
**==> picture [516 x 606] intentionally omitted <==**
**----- Start of picture text -----**
Fig.10 Static Drain - Source On - State Fig.11 Static Drain - Source On - State
Resistance vs. Gate Source Voltage Resistance vs. Junction Temperature
8 1000 : 8 0.8 Irv r-ys A
3© 900 1T=Pulsed 25°C %o pulsedGs~ov
@ 800 il @
o® } or® 06
sq a a
DE. geo0 | Ip= 15A i FC
O = IBZ = Ip= 15A
a iy p=7sa_t| To} 08 SS gg
% 500 ‘til? o 5 ~
ca BZ ca
a 4M 4 ier
7) 7) Ip = 7.5A
300 a ’
£ £ 0.2
a)© 200, ———————————+_ ++ a)©
244100 or—— 2
7)80 es ee 7)8 0
4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150
Gate - Source Voltage : Ves [V] Junction Temperature : Tj [°C]
Fig.12 Static Drain - Source On - State
Resistance vs. Drain Current(!)
8 10 aep
= = 10V 0 a
o foee te
or plused i cete anes tl
2SPIr DAT, = 125°Ch
a
= vi T, = 25°C
ey LUAan
WY ‘e} a =|
a C—O
O¢ re
» § ee
oo> eer —ee|
a7 oy LMM Lil
a EEES55ooee piee s cefb obpeepeel te e bEeSEE
G ee
82c=)s SCI| Cncil A
” 0.01 !
0.01 0.1 1 10 100
Drain Current : lp [A]
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@Electrical characteristic curves
Fig.13 Typical Capacitance vs.
Drain - Source Voltage
**==> picture [486 x 552] intentionally omitted <==**
**----- Start of picture text -----**
000 =ee
ee
8 0ee ee
PTSFSUTSSTTT
reooo2 [LUMI] SS IN TIT.eee
oO aCoNeen SST Oe
"a en en ee
oOBa UNoo
ett
5 oe Co:8 TTS Eeont
o A
S$ , CMICOI CTA il
10 dt,=25°° RSE EPG Cro HE
Ves= OV TTI OTNCNATT
1 M
0.01 0.1 1 10 100 1000
Drain - Source Voltage : Vps [V]
Fig.14 Switching Characteristics Fig.15 Dynamic Input Characteristics
100000 = SS ae 15
SST= 25°C i T.= 25°C
ory sooo SLIT IVS tov fl, = ea
2 SSS eRe 100 Ee ) Pulsed | | | Y
— SOS Cott tt ypulsed in >
SSS CO rr “ 10
sooo® SSTTT «= g |
=e a
a = HH SST >
£2 oo — Ol “TR Ti 8 |
5 EES taon PSS REE a
= Pt Nt Se Pr 5
= Cn reo ;
°
40 SNSS 55S ee 2
SHEE SS 9 SSS SSeS SSSete ©
Ce OPet PipttPP iihis bP Pinh oO py} o } of o } of |
1 ft)
0.01 0.1 1 10 100 0 5 10 15 20 25 30 35 40
Drain Current : Ip [A] Total Gate Charge : Q, [nC]
**----- End of picture text -----**
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R6015KNJ
Datasheet
@Electrical characteristic curves
Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage
Fig.17 Reverse Recovery Time vs. Inverse Diode Forward Current
**==> picture [490 x 229] intentionally omitted <==**
**----- Start of picture text -----**
100 =——_——_—=S=S=S==S=S=S=S=T=S=—=> 1000 ; 1
= 0 PE
a plused § (}--— ec
= +H 7) a
* aa : a = A |
[dees — } al
5 pH
C T, = 125°°—_ 7/77 ® zal
2 imc tt tte i
=°o 1 SST,#1, = -25°C 25°C VVTAL TY |_| | |_| 52 100 seriee| I tTee ee
rf Rgaa a. Se 8 SnEEEEHH
ra) 0.1 Sg—— 2 T= 25°C
©2) SE=====2:::==———=>—ES g® di/ dt=te 100A / ps wall wall
> I ulse
£ |
0.01 PCO 10 ——_—
0.0 0.5 1.0 1.5 0.1 1 10 100
Source - Drain Voltage : Vsp [V] Inverse Diode Forward Current: ls [A]
**----- End of picture text -----**
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**----- Start of picture text -----**
dir/dt
**----- End of picture text -----**
R6015KNJ
Datasheet
@ Dimensions
**==> picture [392 x 636] intentionally omitted <==**
**----- Start of picture text -----**
TO-263S D A2 cl i_
SC-83 4
|
( LPTS D2-PAK ) EE
c--—- | _— 4
|||
I|
|
| io a Al
1". b2t|C) |
J §
b3 Lt) 3 aul
| ar
3
12 alt
:
Pattern of terminal position areas
[Not a pattern of soldering pads]
| DIM}, MILIME TERS —_——+______INGHES ______
)p ATAZ | ooo430 CTCT COTOCS|DT BH
PAS ST
Xk - *:); 0.027 0.039
pA OO
PS 4440045 0.057
po OC CO TD] 24
pct OC] SO 043 | 0059
popoUBE88 BOC 92040 BG0.346 | 4090.362
Ss = 00
po 12.80 | 13.40 | 0504 0.528
a OT 8BO 0G | 00
a es es | 0.047
0.285
a |) 0.043
a ee es | 0.039
po tp UT 90 SO 0.035 |
KT
po 0.059
| DIM;po UMIN,UMTSCT CMMAXaxOT COMMINSeOT MAX
eg© 004g
a 000 OG© Y-1):
a a es ee, 0.083
LS SSes es(0ey 2]. 0. 297528
Dimension in mm/inches
**----- End of picture text -----**
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12/12
gonn| 20190527 - Rev.003
## **Notice**
## **Precaution on using ROHM Products**
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment[(Note 1)] , transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications.
|(Note1) Medical Equipment Classification of the Specific Applications|(Note1) Medical Equipment Classification of the Specific Applications|(Note1) Medical Equipment Classification of the Specific Applications|(Note1) Medical Equipment Classification of the Specific Applications|
|---|---|---|---|
|JAPAN|USA|EU|CHINA|
|CLASS`Ⅲ`|CLASS`Ⅲ`|CLASS`Ⅱ`b|CLASS`Ⅲ`|
|CLASS`Ⅳ`||CLASS`Ⅲ`||
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures:
- [a] Installation of protection circuits or other protective devices to improve system safety
- [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
- [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
- [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
- [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
- [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
- [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
- [f] Sealing or coating our Products with resin or other coating materials
- [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering
- [h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document.
## **Precaution for Mounting / Circuit board design**
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
> **[Notice-PGA-E ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.004**
## **Precautions Regarding Application Examples and External Circuits**
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.
## **Precaution for Electrostatic**
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
## **Precaution for Storage / Transportation**
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
- [b] the temperature or humidity exceeds those recommended by ROHM
- [c] the Products are exposed to direct sunshine or condensation
- [d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period.
## **Precaution for Product Label**
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
## **Precaution for Disposition**
When disposing Products please dispose them properly using an authorized industry waste company.
## **Precaution for Foreign Exchange and Foreign Trade act**
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export.
## **Precaution Regarding Intellectual Property Rights**
1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein.
## **Other Precaution**
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties.
> **[Notice-PGA-E ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.004**
Datasheet
## **General Precaution**
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.
> **[Notice – WE ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.001**
## Links
- [View this product on Novapart](https://novapart.co/products/R6015KNJTL/power-mosfet-n-channel-600-v-15-a-029-ohm-to-263s)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/rohm/r6015knjtl/mosfet-n-ch-600v-15a-150deg-c/dp/3213677RL)
---
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