# Power MOSFET, N Channel, 500 V, 7 A, 1.3 ohm, TO-220FM, Through Hole

![Product image](https://novapart.co/image/farnell:2706753/)

**URL**: https://novapart.co/products/R5007FNX/power-mosfet-n-channel-500-v-7-a-13-ohm-to-220fm
**SKU**: R5007FNX
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7240
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 43W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FM |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 1.3ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2706753/)

Datasheet 

Nch 500V 7A Power MOSFET 

## R5007FNX 

## **l Outline** 

|VDSS<br>500V<br>RDS(on)(Max.)<br>1.3Ω<br>ID<br>±7A<br>TO-220FM<br>PD<br>43W<br>**lInner circuit**<br>**lFeatures**<br>1) Fast reverse recovery time (trr).<br>2) Low on-resistance.<br>3) Fast switching speed.<br>4) Gate-source voltage (VGSS) guaranteed to<br>be ±30V.<br>5) Drive circuits can be simple.<br>6) Pb-free lead plating ; RoHS compliant<br>**lPackaging specifications**<br>Type<br>Packing<br>Bulk<br>Reel size(mm)<br>-<br>**lApplication**<br>Tape width(mm)<br>-<br>Switching Power Supply<br>Basic orderingunit(pcs)<br>500<br>Tapingcode<br>-<br>Marking<br>R5007FNX<br>**lAbsolute maximum ratings **(Ta= 25°C ,unless otherwise specified)<br>Parameter<br>Symbol<br>Value<br>Unit<br>Drain - Source voltage<br>VDSS<br>500<br>V<br>Continuous drain current<br>TC= 25°C<br>ID*1<br>±7<br>A<br>TC= 100°C<br>ID*1<br>±3.4<br>A<br>Pulsed drain current<br>IDP*2<br>±28<br>A<br>Gate - Source voltage<br>VGSS<br>±30<br>V<br>Not Recommended for<br>New Designs<br>(2)<br>(1) Gate<br>(2) Drain<br>(3) Source<br>(1)<br>*1 Body Diode<br>(3)|VDSS<br>500V<br>RDS(on)(Max.)<br>1.3Ω<br>ID<br>±7A<br>TO-220FM<br>PD<br>43W<br>**lInner circuit**<br>**lFeatures**<br>1) Fast reverse recovery time (trr).<br>2) Low on-resistance.<br>3) Fast switching speed.<br>4) Gate-source voltage (VGSS) guaranteed to<br>be ±30V.<br>5) Drive circuits can be simple.<br>6) Pb-free lead plating ; RoHS compliant<br>**lPackaging specifications**<br>Type<br>Packing<br>Bulk<br>Reel size(mm)<br>-<br>**lApplication**<br>Tape width(mm)<br>-<br>Switching Power Supply<br>Basic orderingunit(pcs)<br>500<br>Tapingcode<br>-<br>Marking<br>R5007FNX<br>**lAbsolute maximum ratings **(Ta= 25°C ,unless otherwise specified)<br>Parameter<br>Symbol<br>Value<br>Unit<br>Drain - Source voltage<br>VDSS<br>500<br>V<br>Continuous drain current<br>TC= 25°C<br>ID*1<br>±7<br>A<br>TC= 100°C<br>ID*1<br>±3.4<br>A<br>Pulsed drain current<br>IDP*2<br>±28<br>A<br>Gate - Source voltage<br>VGSS<br>±30<br>V<br>Not Recommended for<br>New Designs<br>(2)<br>(1) Gate<br>(2) Drain<br>(3) Source<br>(1)<br>*1 Body Diode<br>(3)|VDSS<br>500V<br>RDS(on)(Max.)<br>1.3Ω<br>ID<br>±7A<br>TO-220FM<br>PD<br>43W<br>**lInner circuit**<br>**lFeatures**<br>1) Fast reverse recovery time (trr).<br>2) Low on-resistance.<br>3) Fast switching speed.<br>4) Gate-source voltage (VGSS) guaranteed to<br>be ±30V.<br>5) Drive circuits can be simple.<br>6) Pb-free lead plating ; RoHS compliant<br>**lPackaging specifications**<br>Type<br>Packing<br>Bulk<br>Reel size(mm)<br>-<br>**lApplication**<br>Tape width(mm)<br>-<br>Switching Power Supply<br>Basic orderingunit(pcs)<br>500<br>Tapingcode<br>-<br>Marking<br>R5007FNX<br>**lAbsolute maximum ratings **(Ta= 25°C ,unless otherwise specified)<br>Parameter<br>Symbol<br>Value<br>Unit<br>Drain - Source voltage<br>VDSS<br>500<br>V<br>Continuous drain current<br>TC= 25°C<br>ID*1<br>±7<br>A<br>TC= 100°C<br>ID*1<br>±3.4<br>A<br>Pulsed drain current<br>IDP*2<br>±28<br>A<br>Gate - Source voltage<br>VGSS<br>±30<br>V<br>Not Recommended for<br>New Designs<br>(2)<br>(1) Gate<br>(2) Drain<br>(3) Source<br>(1)<br>*1 Body Diode<br>(3)|VDSS<br>500V<br>RDS(on)(Max.)<br>1.3Ω<br>ID<br>±7A<br>TO-220FM<br>PD<br>43W<br>**lInner circuit**<br>**lFeatures**<br>1) Fast reverse recovery time (trr).<br>2) Low on-resistance.<br>3) Fast switching speed.<br>4) Gate-source voltage (VGSS) guaranteed to<br>be ±30V.<br>5) Drive circuits can be simple.<br>6) Pb-free lead plating ; RoHS compliant<br>**lPackaging specifications**<br>Type<br>Packing<br>Bulk<br>Reel size(mm)<br>-<br>**lApplication**<br>Tape width(mm)<br>-<br>Switching Power Supply<br>Basic orderingunit(pcs)<br>500<br>Tapingcode<br>-<br>Marking<br>R5007FNX<br>**lAbsolute maximum ratings **(Ta= 25°C ,unless otherwise specified)<br>Parameter<br>Symbol<br>Value<br>Unit<br>Drain - Source voltage<br>VDSS<br>500<br>V<br>Continuous drain current<br>TC= 25°C<br>ID*1<br>±7<br>A<br>TC= 100°C<br>ID*1<br>±3.4<br>A<br>Pulsed drain current<br>IDP*2<br>±28<br>A<br>Gate - Source voltage<br>VGSS<br>±30<br>V<br>Not Recommended for<br>New Designs<br>(2)<br>(1) Gate<br>(2) Drain<br>(3) Source<br>(1)<br>*1 Body Diode<br>(3)|
|---|---|---|---|
|Avalanche current, singlepulse||IAS*3<br>3.5|A|
|Avalanche energy, singlepulse||EAS*3<br>3.2|mJ|
|Avalanche energy, repetitive||EAR*4<br>2.6|mJ|
|Power dissipation  (Tc= 25°C)||PD<br>43|W|
|Junction temperature||Tj<br>150|℃|
|Operating junction and storage temperature range||Tstg<br>-55 to +150|℃|
|Reverse diode dv/dt||dv/dt<br>15|V/ns|



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Datasheet 

## **l Absolute maximum ratings** 

|Parameter|Symbol<br>Conditions|Values|Unit|
|---|---|---|---|
||VDS= 400V, ID= 7A|||
|Drain - Source voltage slope|dv/dt<br>Tj= 125℃|50|V/ns|
|**lThermal resistance**<br>Parameter<br>Symbol<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Thermal resistance, junction - case<br>RthJC<br>-<br>-<br>2.85<br>℃/W<br>Thermal resistance, junction - ambient<br>RthJA<br>-<br>-<br>70<br>℃/W<br>Soldering temperature, wavesoldering for 10s<br>Tsold<br>-<br>-<br>265<br>℃<br>**lElectrical characteristics** (Ta= 25°C)<br>Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Drain - Source breakdown<br>voltage<br>V(BR)DSS<br>VGS= 0V, ID= 1mA<br>500<br>-<br>-<br>V<br>Drain - Source avalanche<br>breakdown voltage<br>V(BR)DS<br>VGS= 0V, ID= 3.5A<br>-<br>580<br>-<br>V<br>Zero gate voltage<br>drain current<br>IDSS<br>VDS= 500V, VGS= 0V<br>μA<br>Tj=  25°C<br>-<br>1<br>100<br>Tj=  125°C<br>-<br>-<br>10000<br>Gate - Source leakage current<br>IGSS<br>VGS= ±30V, VDS= 0V<br>-<br>-<br>±100<br>nA<br>Gate threshold voltage<br>VGS(th)<br>VDS= 10V, ID= 1mA<br>2<br>-<br>4<br>V<br>Static drain - source<br>on - state resistance<br>RDS(on)*6<br>VGS= 10V, ID= 3.5A<br>Ω<br>Tj=  25°C<br>-<br>1.0<br>1.3<br>Not Recommended for<br>New Designs||||
||Tj=  125°C<br>-<br>1.98|-||
|Gate resistance<br>RG|f = 1MHz, open drain<br>-<br>7.3|-|Ω|



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Datasheet 

## **l Electrical characteristics** (Ta = 25°C) 

|Values||||
|---|---|---|---|
|Parameter<br>Symbol<br>Conditions<br>Min.<br>Typ.||Max.|Unit|
|Forward Transfer<br>Admittance<br>|Yfs|*6<br>VDS= 10V, ID= 3.5A<br>2.0<br>4.2<br>-<br>S<br>Input capacitance<br>Ciss<br>VGS= 0V<br>-<br>450<br>-<br>pF<br>Output capacitance<br>Coss<br>VDS= 25V<br>-<br>300<br>-<br>Reverse transfer capacitance<br>Crss<br>f = 1MHz<br>-<br>20<br>-<br>Effective output capacitance,<br>energy related<br>Co(er)<br>VGS= 0V,<br> VDS= 0V to 400V<br>-<br>22.3<br>-<br>pF<br>Effective output capacitance,<br>time related<br>Co(tr)<br>-<br>61.9<br>-<br>Turn - on delay time<br>td(on)*6<br>VDD ⋍250V, VGS= 10V<br>-<br>13<br>-<br>ns<br>Rise time<br>tr*6<br>ID= 3.5A<br>-<br>13<br>-<br>Turn - off delay time<br>td(off)*6<br>RL ⋍71.5Ω<br>-<br>30<br>60<br>Fall time<br>tf*6<br>RG= 10Ω<br>-<br>20<br>40<br>**lGate charge characteristics** (Ta= 25°C)<br>Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Total gate charge<br>Qg*6<br>VDD ⋍250V<br>-<br>15<br>-<br>nC<br>Gate - Source charge<br>Qgs*6<br>ID= 7A<br>-<br>3.5<br>-<br>Gate - Drain charge<br>Qgd*6<br>VGS= 10V<br>-<br>6<br>-<br>Gate plateau voltage<br>V(plateau)<br>VDD ⋍250V, ID= 7A<br>-<br>6.1<br>-<br>V<br>*1 Limited only by maximum temperature allowed.<br>*2 Pw ≤ 10μs, Duty cycle ≤ 1%<br>*3 L⋍500μH, V=50V, R=25Ω, starting T=25°C<br>Not Recommended for<br>New Designs||||



*2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L⋍500μH, VDD=50V, RG=25Ω, starting Tj=25°C 

*4 L⋍500μH, VDD=50V, RG=25Ω, starting Tj=25°C, f=10kHz 

*5 Reference measurement circuits Fig.5-1. 

*6 Pulsed 

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**R5007FNX** 

Datasheet 

**l Body diode electrical characteristics** (Source-Drain) (Ta = 25°C) 

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|||||||||
|---|---|---|---|---|---|---|---|
|Values|
|TT|
|Parameter|Symbol|Conditions|Unit|
|Min.|Typ.|Max.|
|ee|
|Continuous forward|
|IS|[*1]|-|-|7|A|
|current|
|TC = 25℃|
|Pulse forward current|ISP|[*2]|-|-|28|A|
|Forward voltage|VSD|[*6]|VGS = 0V, IS = 7A|-|-|1.5|V|
|a|ee|
|Reverse recovery time|trr|[*6]|-|70|-|ns|
|oe|IS = 7A|—|||||
|Reverse recovery charge|Qrr|[*6]|-|0.20|-|μC|
|di/dt = 100A/μs|
|oe|—|||||
|Peak reverse recovery current|Irrm|[*6]|-|5.8|-|A|
|Peak rate of fall of reverse|
|dirr/dt|Tj = 25℃|-|510|-|A/μs|
|recovery current|
|l|Typical transient|thermal characteristics|
|Symbol|Value|Unit|Symbol|Value|Unit|
|Rth1|0.327|Cth1|0.00167|
|Rth2|1.12|K/W|Cth2|0.0151|Ws/K|
|Rth3|2.00|Cth3|0.391|
|:|Tj|Rth1|Rth,n|||T|case|
|:|||Cth1|Cth2|| Cth,n|!|

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R5007FNX Datasheet<br>l Electrical characteristic curves<br>Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area<br>120 100 == SSS ss ee eee<br>=<br>3 Pitti ci ine fete<br>: 100 = omit[+ i  NTNtt TH<br>= Operation in this area = N SSossssssy<br>go c Sein Pw = ims KNEE<br>5 O o4 ll IL 1 1 NI<br>oO 20 im I Tt GB<br>3 re2ee HH nll<br>oO |Single Pulse J). ii<br>0 oot | LUM COUN LUE 1<br>0 50 100 150 200 0.1 1 10 100 1000<br>Junction Temperature: Tj [°C] Drain - Source Voltage : Vps [V]<br>Fig.3 Normalized Transient Thermal<br>Resistance vs. Pulse Width<br>1000<br>z UU TT AT 1<br>% T, = 25°C<br>2 100 +] Single Pulse<br>fg Reese: [lll lll]<br>2 410 _|Reveha = 70°CW<br>ac= TOTTI<br>o ng<br>— Ly<br>: mal ll<br>ei a mu<br>oO Ton -<br>2 TT Fe ep b=<br>= 901 Gey anil OO oie<br>Foo HMUMMA<br>0.001 , pall 4 S a<br>= | 8588<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


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**20160324 - Rev.002** 

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R5007FNX Datasheet<br>l Electrical characteristic curves<br>Fig.4 Avalanche Current vs. Inductive Load Fig.5 Avalanche Power Losses<br>5 Com 7 To 4000 a<br>Vpp<br>= SOV , Re = 250 =, 3500 r<br>=o<br>_8<br>= g HIM LIN 8 5600<br>3 = 2000 f<br>O ® Vi<br>2 2 ‘ 5 /<br>© (0)<br>6 \ a 1500 pf<br>E© \ 22 1000 ELIE VAC|<br>x 1 NN &<br>Null, 2 =<br>0) “ 0) |TY<br>0.01 0.1 1 10 100 10000 100000 1000000<br>Coil Inductance : L [mH] Frequency: f [Hz]<br>Fig.6 Avalanche Energy Derating Curve<br>vs. Junction Temperature<br>120<br>= 7<br>x 100<br>€<br>2<br>3<br><x<br>r<br>Yn : ERNE\<br>><br>><br>iT 40<br>(ob)<br><&<br>{S)<br>©o 20 .<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


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**20160324 - Rev.002** 

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**R5007FNX** 

Datasheet 

## **l Electrical characteristic curves** 

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Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)<br>a 7<br>Lh KvSs oy | | [Jj of ij i} j | —<br>_ _<br>2 LI 36.0V/-—— (SSR RRESSERE 2 b> To tov<br>5 4 5 ee a<br>© Het © || | | esvi or<br>5 oe ee | TTT 6 an 6.0V 4<br>|<br>|<br>= 4.5V<br>HTT TT TTT Ves = 4.5V — ° | t+‘ Ves<br>0 10 20 30 40 50 0 1 2 3 4<br>Drain - Source Voltage : Vps [V] Drain - Source Voltage : Vps [V]<br>Fig.9 Tj = 150°C Typical Output  Fig.10 Tj = 150°C Typical Output<br>Characteristics (I) Characteristics (II)<br>FS ooo ooo 5<br>PASAY A cere f="n00n0<br>«Cleo ACCT Tesioss | eet<br>rove soy<br>< 5s LUA| TT < 4 Pt | | ffitd<br>3 EEE 3 Py<br>gs<br>SCPE TELL<br>5 ODD) Seeeeee eee 5 PLE _L TTT<br>& , Ogos ov<br>c A sow) | < 2 sav NAO<br>f SE ye © 50oF<br>° foens<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


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**20160324 - Rev.002** 

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R5007FNX Datasheet<br>l Electrical characteristic curves<br>Fig.11 Breakdown Voltage vs.  Fig.12 Typical Transfer Characteristics<br>Junction Temperature<br>2. 800 100 ; , , , :<br>& 750 _[plused | yt |<br>2 ===<br>3e<br>S<br>650 —— F oe eee<br>z 600 —— —_| o- ARtT} Ta == 125°C49500<br>rs 550 aa 0.1 : : : FFT, = 25°C =<br>Oo g SHH oC<br>g se ” oo: La<br>&g 400 : 0.001 aadPTT<br>a 50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8<br>Junction Temperature : T; [°C] Gate - Source Voltage : Ves [V]<br>Fig.13 Gate Threshold Voltage vs. Fig.14 Transconductance vs. Drain Current<br>Junction Temperature<br>_ Vos=10Vi_ | | || WVos= 10V HEE aS<br>S Ip= 1mA plused = H ae it<br>ry 5 Ised | —_ eae enhateteteh _+_+ HT a +44<br>- 4g /_ | | | | | ft D 1 GQ.<br>oO RR edleeeliacdaalshehal<br>> 3 J 1 4 2 } } ) 3) | jo Qh T, = -25°C a Hil<br>z | | 3 wi Sst, = 25°C<br>2 5 Wy NM; = 75°C |<br>B 2 9 01 GF NT,= 125°C<br>g 2 Seessie easlis<br>< ; ; © it aa<br>©<br>°<br>0) TTT tt 0.01 PT LTWM LTT TA<br>-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10<br>Junction Temperature : T; [°C] Drain Current : Ip [A]<br>www.rohm.com<br>8/13 20160324 - Rev.002<br>© 2016 ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


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R5007FNX Datasheet<br>l Electrical characteristic curves<br>Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State<br>Resistance vs. Gate Source Voltage Resistance vs. Junction Temperature<br>® 5 ® 5 ee<br>£ plused & Gs<br>2 a pulsed<br>nn<br>aa<br>L £<br>sx sx<br>O¢ Ip = 7.0A O¢ Ip = 7.0A<br>3) eA Ip = 3.5A 3) eA<br>5a 2 52 2 | ; + + —— + 5 ;<br>Oo oe Oo oe<br>””<br>=& Ip = 3.5A<br>a a)<br>22<br>ss<br>n Q 0 7) 0)<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>Gate - Source Voltage : Ves [V] Junction Temperature : T; [°C]<br>Fig.17 Static Drain - Source On - State<br>Resistance vs. Drain Current<br>8 10 PT ———o sae<br>= es<br>7) plused= OVECl Ta = 125°C]<br>eA fs Le 772= 75°C | TTT]<br>Ta = 25°C<br>ow | IATT|<br>@ |_| THAT Ta = -25°C<br>oOES 470i<br>o s 1 AAI fn<br>2 2 a 7a a ae<br>5 ~ + 4 + +—+ +h 4—4+_4_4__4_|<br>©<br>a }—}—} 1 }—1—+4-4]<br>2<br>Ss<br>7) 0)<br>0.1 1 10<br>Drain Current : Ip [A]<br>www.rohm.com<br>9/13 20160324 - Rev.002<br>© 2016 ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


**R5007FNX** 

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R5007FNX Datasheet<br>l Electrical characteristic curves<br>Fig.18 Typical Capacitance vs. Drain - Fig.19 Coss Stored Energy<br>Source Voltage<br>10000 FE 4. OO<br>| =<br>Se :<br>1000 TT es<br>— Po EAA Ooo<br>oO a a | oc<br>8° too UUETHNI TT aw<br>B=8 SSes RE Con |II 3 J<br>8 SO CnCOIN Tt 8 a<br>Bg TN, 4<br>| f= 1MHz a fo)<br>| PO TPT IA ArT oO<br>1 "|Vos=comm OV coiHALTE LIT Sess | 0 nS<br>0.01 0.1 1 10 100 1000 0 100 200 300 400 500<br>Drain - Source Voltage : Vps [V] Drain - Source Voltage : Vps [V]<br>Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics<br>10000 15<br>PNET<br>Vpp= 250V | Voo= 250V Po fe<br>NS vee tov [| lb=7A ofOCS<br>a PNT NS 3, fo<br>0) OSH & A<br>55 CTTell tavony {THHB— SCSI ss Pf] TU<br>5 || ee ee<br>7) 10 eeaSaSePy i | tSg eepfpf [TT][jf] | ee eeof eeft ee<br>‘ Po) A<br>0.01 0.1 1 10 0 5 10 15 20 25<br>Drain Current : Ip [A] Total Gate Charge : Q, [nC]<br>www.rohm.com<br>10/13 20160324 - Rev.002<br>© 2016 ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


**R5007FNX** 

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R5007FNX Datasheet<br>l Electrical characteristic curves<br>Fig.22 Inverse Diode Forward Current vs. Fig.23 Reverse Recovery Time vs.<br>Source - Drain Voltage Inverse Diode Forward Current<br>+ 9,00 1000 aa as<br>0 he.”plused =| ry etTEEPE te aoedi/dt=100A/ps ||<br>:o 10 | n BESSSeeeeRSR Sees Ssca TTT]| | | PulsedVege ov<br>5Oo Sap| T,=75°C SEne>\ | 4 _|coe [eB] ke LLL =<br>$ i T= -25°C = NSD { Qo 100 a<br>95 ren SAAS 3 a<br>SU© ! PERER AESee a SEH ett><br>8 s00///Aaaeee | | {|<br>_—————-2- fem<br>g 2 ———————— a ee<br>© SEES Teco<br>é, Hirt o<br>0.01 ECAPl 10 LUI TA<br>0.0 0.5 1.0 1.5 0.1 1 10<br>Source - Drain Voltage : Vsp [V] Inverse Diode Forward Current: Ig [A]<br>www.rohm.com<br>© 2016 ROHM Co., Ltd. All rights reserved. 11/13 20160324 - Rev.002<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


**R5007FNX** 

Datasheet 

## **l Measurement circuits** 

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**----- Start of picture text -----**<br>
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms<br>Ves |p Pulse width<br>Vos<br>R, 50% 90% N_ 50%<br>D.U.T. VesVDs 10%<br>10% 10%<br>Re Vop ton} \ ft amt |/ |<br>|<br>| on 90% lotr 90%<br>Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform<br>Ves ——_—— Ip Vo<br>Vos<br>R. Q,<br>le(const.) — D.U.T. VosPo<br>Vop<br>I Qys Qua Charge<br>Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform<br>Ves <+§ las Vos<br>L 71 \<br>D.U.T. 4Ya las \\\ Vieryoss<br>V Yo \<br>Re 7 \<br>a1 2 VieRypss<br>| DD Voo Wa 2 L las Vierypss\ - Vop<br>Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform<br>Ves + las Vos<br>7<br>L / \\<br>D.U.T— 7 \\ Vv,(BR)DSS<br>Y \<br>Re Vop Lo las ‘<br>yo \<br>Vop Y \<br>7 / a<br>Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 

**20160324 - Rev.002** 

12/13 

**==> picture [526 x 759] intentionally omitted <==**

**----- Start of picture text -----**<br>
R5007FNX Datasheet<br>l Dimensions<br>TO-220FM D 7<br>A<br>El<br>Dp onSrar os<br>o=n 7s [<]<br>p N<x ! |<br>bt | z<br>ii<br>Q<br>|<br>!<br>sh | OFS [x@IA<br>MILIMETERS INCHES<br>|| AtA |{|| [1660] =MIN.1g0 | | [—=MAX__|_——] 2.217.6 0 | 0.654——io.co7tMIN. || 0. MAX_—i693087<br>14.80 0.583 0.606<br>0.268 0.283<br>|b |  o70 | 090 | 0.028 0.035<br>| bt |) —tto FEO] 50 | 0.048 0.059<br>| ec | o70 | 085 | 0.028 0.033<br>| Dd | 990 | 10.30 0.390 0.406<br>0.173 0.189<br>| oe | 0 —<br>| et {| 270 | 300 | o106 | o118 |<br>| F | 280 | 320 | o110 | 0.126<br>| 11.50 0.453 | [0492] |<br>| spQa | 3021 0 | 3 14 0 | 01180.083 | 0.1 3422<br>ee es 1: nT)<br>Dimension in mm/inches<br>www.rohm.com<br>13/13 20160324 - Rev.002<br>© 2016 ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>


## **Notice** 

## **Precaution on using ROHM Products** 

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.).  If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment[(Note 1)] , transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASS `Ⅲ` CLASS `Ⅱ` b CLASS `Ⅲ` CLASS `Ⅲ` CLASS `Ⅳ` CLASS `Ⅲ` 2.  ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions.  If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6.  In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7.  De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8.  Confirm that operation temperature is within the specified range described in the product specification. 9.  ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. 

## **Precaution for Mounting / Circuit board design** 

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 

2.  In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. 

For details, please refer to ROHM Mounting specification 

> **[Notice-PGA-E ]** © 2015 ROHM Co., Ltd. All rights reserved. 

**Rev.003** 

## **Precautions Regarding Application Examples and External Circuits** 

   1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 

   2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use.  Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document.  ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. 

- **Precaution for Electrostatic** This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). 

- **Precaution for Storage / Transportation** 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 

- 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 

- 3.  Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 

- 4.  Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. 

- **Precaution for Product Label** A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. 

- **Precaution for Disposition** When disposing Products please dispose them properly using an authorized industry waste company. 

- **Precaution for Foreign Exchange and Foreign Trade act** Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. 

- **Precaution Regarding Intellectual Property Rights** 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 

- 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 

- 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. 

- **Other Precaution** 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). 

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 

4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. 

> **[Notice-PGA-E ]** © 2015 ROHM Co., Ltd. All rights reserved. 

**Rev.003** 



## Links

- [View this product on Novapart](https://novapart.co/products/R5007FNX/power-mosfet-n-channel-500-v-7-a-13-ohm-to-220fm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/rohm/r5007fnx/mosfet-n-ch-500v-7a-to-220fm-3/dp/2706753)
---

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