# Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.17 ohm
**URL**: https://novapart.co/products/QS6M3TR/dual-mosfet-complementary-n-and-p-channel-20-v-15
**SKU**: QS6M3TR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: β¬0.2310
**Stock**: 1000+
**Lead Time**: 148 days (indicative)
## Description
Transistor Polarity:N and P Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.17oh; Available until stocks are exhausted Alternative available
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 6Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | TSMT |
| Operating Temperature Max | 150Β°C |
| Power Dissipation N Channel | 900mW |
| Power Dissipation P Channel | 1.25W |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | 1.5A |
| Continuous Drain Current Id P Channel | 1.5A |
| Drain Source On State Resistance N Channel | 0.17ohm |
| Drain Source On State Resistance P Channel | 0.17ohm |
## Datasheet
π [Download PDF](https://novapart.co/datasheet/farnell:1525473/)
QS6M3
Transistors
## 2.5V Drive Nch+Pch MOSFET
## **QS6M3**
οΏ½ **Structure**
Silicon N-channel / P-channel MOSFET
οΏ½ **Features**
1) Low on-resistance.
2) Built-in G-S Protection Diode.
- 3) Small Surface Mount Package (TSMT6).
## οΏ½ **Application**
Power switching, DC / DC converter.
## οΏ½ **Dimensions** (Unit : mm)
**==> picture [185 x 129] intentionally omitted <==**
**----- Start of picture text -----**
TSMT6
1.0MAX
2.9
1.9 0.85
0.95 0.95 0.7
(6) (5) (4)
0~0.1
(1) (2) (3)
1pin mark
0.4 0.16
Each lead has same dimensions
Abbreviated symbol : M03
1.6 2.8
0.60.3~
**----- End of picture text -----**
## οΏ½ **Packaging specifications**
|Type|Package|Taping|
|---|---|---|
||Code|TR|
||Basic ordering unit (pieces)|3000|
|QS6M3|||
## οΏ½ **Absolute maximum ratings** (Ta=25Β°C)
|Parameter||Symbol|Limits|Limits|Unit|
|---|---|---|---|---|---|
||||Tr1 : Nch|Tr2 : Pch||
|Drain-source voltage||VDSS|30|β20|V|
|Gate-source voltage||VGSS|Β±12|Β±12|V|
|Drain current|Continuous|ID|Β±1.5|Β±1.5|A|
||Pulsed|IDP
β1|Β±6.0|Β±6.0|A|
|Source current
(Body diode)|Continuous|IS|0.8|β0.75|A|
||Pulsed|ISP
β1|6.0|β6.0|A|
|Total power dissipation||PD
β2|1.25||W / TOTAL|
||||0.9||W / ELEMENT|
|Channel temperature||Tch|150||Β°C|
|Storage temperature||Tstg|β55 to+150||Β°C|
|β1 Pwβ€10Β΅s, Duty cycleβ€1%
β2 Mounted on a ceramic board||||||
## οΏ½ **Equivalent circuit**
**==> picture [142 x 119] intentionally omitted <==**
**----- Start of picture text -----**
(6) (5) (4)
β 2 β 2
β 1 β 1 (1) Tr1 (Nch) Gate
(2) Tr2 (Pch) Source
(3) Tr2 (Pch) Gate
(1) (2) (3) (4) Tr2 (Pch) Drain
β 1 ESD PROTECTION DIODE (5) Tr1 (Nch) Source
β 2 BODY DIODE (6) Tr1 (Nch) Drain
**----- End of picture text -----**
## οΏ½ **Thermal resistance**
|οΏ½**Thermal resistance**||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit
Β°C / W / TOTAL
Β°C / W / ELEMENT|
|Channel to ambient|Rth (ch-a)
β|100||
|||139||
- β Mounted on a ceramic board
Rev.B 1/7
QS6M3
## Transistors
## **N-ch**
## οΏ½ **Electrical characteristics** (Ta=25Β°C)
|οΏ½**Electrical characteristics**(|Ta=25Β°C|Ta=25Β°C|Ta=25Β°C|)|||||
|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|||Min.|Typ.|Max.|Unit|Conditions|
|Gate-source leakage|IGSS|||β|β|Β±10|Β΅A|VGS=Β±12V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||30|β|β|V|ID=1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||β|β|1|Β΅A|VDS=30V, VGS=0V|
|Gate threshold voltage|VGS (th)|||0.5|β|1.5|V|VDS=10V, ID=1mA|
|Static drain-source on-state
resistance|RDS (on)
β|||β|170|230|mβ¦|ID=1.5A, VGS=4.5V|
|||||β|180|245||ID=1.5A, VGS=4.0V|
|||||β|260|360||ID=1.0A, VGS=2.5V|
|Forward transfer admittance||Yfs|β|1.0|β|β|S|ID=1.0A, VDS=10V|
|Input capacitance|Ciss|||β|80|β|pF|VDS=10V
VGS=0V
f=1MHz|
|Output capacitance|Coss|||β|25|β|pF||
|Reverse transfer capacitance|Crss|||β|15|β|pF||
|Turn-on delay time|td (on)
β|||β|7|β|ns|VGS=4.5V
RL=15β¦
RG=10β¦
ID=1A, VDD15V|
|Rise time|tr
β|||β|18|β|ns||
|Turn-off delay time|td (off)
β|||β|15|β|ns||
|Fall time|tf
β|||β|15|β|ns||
|Total gate charge|Qg
β|||β|1.6|β|nC|VDD15V
VGS=4.5V
RL=10β¦
RG=10β¦
ID=1.5A|
|Gate-sourcecharge|Qgs
β|||β|0.5|β|nC||
|Gate-draincharge|Qgd
β|||β|0.9|β|nC||
β Pulsed
- **Body diode characteristics** (Source-Drain) (Ta=25Β°C)
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD
β|β|β|1.2|V|IS=3.2A,VGS=0V|
β Pulsed
Rev.B
2/7
QS6M3
## Transistors
## **P-ch**
## οΏ½ **Electrical characteristics** (Ta=25Β°C)
|οΏ½**Electrical characteristics**(|Ta=25Β°C|Ta=25Β°C|Ta=25Β°C|)|||||
|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|||Min.|Typ.|Max.|Unit|Conditions|
|Gate-source leakage|IGSS|||β|β|Β±10|Β΅A|VGS= Β±12V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||β20|β|β|V|ID= β1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||β|β|β1|Β΅A|VDS= β20V, VGS=0V|
|Gate threshold voltage|VGS (th)|||β0.7|β|β2.0|V|VDS= β10V, ID=1mA|
|Static drain-source on-state
resistance|RDS (on)
β|||β|155|215|mβ¦|ID= β1.5A, VGS= β4.5V|
|||||β|170|235||ID= β1.5A, VGS= β4.0V|
|||||β|310|430||ID= β0.75A, VGS= β2.5V|
|Forward transfer admittance||Yfs|β|1.0|β|β|S|ID= β0.75A, VDS= β10V|
|Input capacitance|Ciss|||β|270|β|pF|VDS= β10V
VGS=0V
f=1MHz|
|Output capacitance|Coss|||β|40|β|pF||
|Reverse transfer capacitance|Crss|||β|35|β|pF||
|Turn-on delay time|td (on)
β|||β|10|β|ns|VGS= β4.5V
RL=20β¦
RG=10β¦
ID= β0.75A, VDD β15V|
|Rise time|tr
β|||β|12|β|ns||
|Turn-off delay time|td (off)
β|||β|45|β|ns||
|Fall time|tf
β|||β|20|β|ns||
|Total gate charge|Qg
β|||β|3.0|β|nC|VDD β15V
VGS= β4.5V
ID= β1.5A
RL=10β¦
RG=10β¦|
|Gate-sourcecharge|Qgs
β|||β|0.8|β|nC||
|Gate-draincharge|Qgd
β|||β|0.85|β|nC||
β Pulsed
- **Body diode characteristics** (Source-Drain) (Ta=25Β°C)
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD|β|β|β1.2|V|IS= β0.75A,VGS=0V|
Rev.B
3/7
QS6M3
## Transistors
## **N-ch**
## οΏ½ **Electrical characteristic curves**
**==> picture [423 x 129] intentionally omitted <==**
**----- Start of picture text -----**
1000 Ta = 25 Β° C 1000 Ta = 25 Β° C 6 Ta = 25 Β° C
f = 1MHz VDD = 15V VDD = 15V
VGS = 0V tf VGS = 4.5V 5 ID = 1.5A
RG = 10 β¦ RG = 10 β¦
Ciss Pulsed Pulsed
100 100 4
Crss
Coss td (off) 3
10 10 td (on) 2
tr 1
1 1 0
0.01 0.1 1 10 100 0.01 0.1 1 10 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : VDS (A) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC)
(V)
GS
CAPACITANCE : C (pF) SWITCHING TIME : t (ns) GATE-SOURCE VOLTAGE : V
**----- End of picture text -----**
Fig.1 Typical Capacitance vs. Drain-Source Voltage
**==> picture [107 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Fig.2 Switching Characteristics
**----- End of picture text -----**
**==> picture [112 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Fig.3 Dynamic Input Characteristics
**----- End of picture text -----**
**==> picture [429 x 373] intentionally omitted <==**
**----- Start of picture text -----**
10 VDS = 10V 1.0 Ta = 25 Β° C 10 VGS = 0V
Pulsed 0.9 Pulsed Pulsed
1 TaTaTaTa ==== β 125752525 °° CC °° CC 0.80.70.6 IIDD == 1.5A0.75A 1 TaTaTaTa ==== β 125752525 °° CC °° CC
0.1 0.5
0.4
0.1
0.3
0.01
0.2
0.1
0.001 0.0 0.01
0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5
GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source Fig.6 Source Current vs.
On-State Resistance vs. Source-Drain Voltage
Gate-Source Voltage
10 10 10
VGS = 4.5V VGS = 4.0V VGS = 2.5V
Pulsed Pulsed Pulsed
1 TaTaTaTa ==== β 125752525 °° CC °° CC 1 TaTaTaTa ==== β 125752525 °° CC °° CC 1 TaTaTaTa ==== β 125752525 °° CC °° CC
0.1 0.1 0.1
0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10
DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source Fig.8 Static Drain-Source Fig.9 Static Drain-Source
On-State Resistance On-State Resistance On-State Resistance
vs. Drain Current ( Ξ ) vs. Drain Current ( ΞΞ ) vs. Drain Current ( ΞΞΞ )
) β¦
(m
DRAIN CURRENT : I (A)D RDS (on) SOURCE CURRENT : I (A)s
STATIC DRAIN-SOURCE ON-STATE RESISTANCE :
) β¦ ) β¦ ) β¦
(m (m (m
DS (on) DS (on) DS (on)
R R R
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : STATIC DRAIN-SOURCE ON-STATE RESISTANCE : STATIC DRAIN-SOURCE ON-STATE RESISTANCE :
**----- End of picture text -----**
Rev.B 4/7
QS6M3
## Transistors
## **P-ch**
## οΏ½ **Electrical characteristic curves**
**==> picture [429 x 572] intentionally omitted <==**
**----- Start of picture text -----**
1000 Ta = 25 Β° C 1000 Ta = 25 Β° C 8 Ta = 25 Β° C
f = 1MHz VDD = β 15V 7 VDD = β 15V
VGS = 0V VGS = β 4.5V ID = β 1.5A
tf RG = 10 β¦ 6 RG = 10 β¦
Ciss 100 Pulsed Pulsed
5
100 td (off) 4
td (on) 3
10
Coss 2
Crss tr
1
10 1 0
0.01 0.1 1 10 100 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 3.5
DRAIN-SOURCE VOLTAGE : β VDS (V) DRAIN CURRENT : β ID (A) TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics
vs. Drain-Source Voltage
10 VDS = β 10V 500 Ta = 25 Β° C 10 Ta = 25 Β° C
Pulsed Pulsed VGS = 0V
Pulsed
400
1 Ta = 125 Β° C ID = β 1.5A
Ta = 75 Β° C ID = β 0.75A 1
Ta = 25 Β° C 300
Ta = β 25 Β° C
0.1
200
0.1
0.01
100
0.001 0 0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0
GATE-SOURCE VOLTAGE : β VGS (V) GATE-SOURCE VOLTAGE : β VGS (V) SOURCE-DRAIN VOLTAGE : β VSD (V)
Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source Fig.6 Source Current vs.
On-State Resistance vs. Source-Drain Voltage
Gate-Source Voltage
10000 10000 10000
VGS = β 4.5V VGS = β 4V VGS = β 2.5V
Pulsed Pulsed Ta = 125 Β° C Pulsed
1000 TaTaTaTa ==== β 125752525 °° CC °° CC 1000 TaTaTaTa ==== β 125752525 °° CC °° CC 1000 TaTaTa === β 752525 °° CC Β° C
100 100 100
10 10 10
0.1 1 10 0.1 1 10 0.1 1 10
DRAIN CURRENT : β ID (A) DRAIN CURRENT : β ID (A) DRAIN CURRENT : β ID (A)
Fig.7 Static Drain-Source Fig.8 Static Drain-Source Fig.9 Static Drain-Source
On-State Resistance On-State Resistance On-State Resistance
vs. Drain Current ( Ξ ) vs. Drain Current ( ΞΞ ) vs. Drain Current ( ΞΞΞ )
(V)
GS
V
CAPACITANCE : C (pF) SWITCHING TIME : t (ns) β
GATE-SOURCE VOLTAGE :
(A)ID β ) (mR β¦ DS (on) (A)IS β
DRAIN CURRENT :
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : REVERSE DRAIN CURRENT :
) β¦ ) β¦ ) β¦
(m (m (m
DS (on) DS (on) DS (on)
R R R
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : STATIC DRAIN-SOURCE ON-STATE RESISTANCE : STATIC DRAIN-SOURCE ON-STATE RESISTANCE :
**----- End of picture text -----**
**==> picture [31 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Rev.B
**----- End of picture text -----**
5/7
QS6M3
Transistors
## **N-ch**
οΏ½ **Measurement circuit**
**==> picture [138 x 84] intentionally omitted <==**
**----- Start of picture text -----**
VGS ID
VDS
RL
D.U.T.
RG
VDD
**----- End of picture text -----**
Fig.1-1 Switching Time Measurement Circuit
**==> picture [142 x 84] intentionally omitted <==**
**----- Start of picture text -----**
VGS ID
VDS
RL
IG(Const.)
D.U.T.
RG
VDD
**----- End of picture text -----**
Fig.2-1 Gate Charge Measurement Circuit
**==> picture [131 x 92] intentionally omitted <==**
**----- Start of picture text -----**
Pulse Width
90%
50% 50%
VGS 10%
VDS
10% 10%
90% 90%
td(on) tr td(off) tf
ton toff
**----- End of picture text -----**
Fig.1-2 Switching Waveforms
**==> picture [113 x 96] intentionally omitted <==**
**----- Start of picture text -----**
VG
Qg
VGS
Qgs Qgd
Charge
**----- End of picture text -----**
Fig.2-2 Gate Charge Waveform
Rev.B 6/7
QS6M3
Transistors
## **P-ch**
οΏ½ **Measurement circuit**
**==> picture [138 x 84] intentionally omitted <==**
**----- Start of picture text -----**
VGS ID
VDS
RL
D.U.T.
RG
VDD
**----- End of picture text -----**
Fig.3-1 Switching Time Measurement Circuit
**==> picture [142 x 84] intentionally omitted <==**
**----- Start of picture text -----**
VGS ID
VDS
RL
IG(Const.)
D.U.T.
RG
VDD
**----- End of picture text -----**
Fig.4-1 Gate Charge Measurement Circuit
**==> picture [131 x 92] intentionally omitted <==**
**----- Start of picture text -----**
Pulse Width
VGS 10%
50% 90% 50%
10% 10%
90% 90%
VDS
td(on) tr td(off) tf
ton toff
**----- End of picture text -----**
Fig.3-2 Switching Waveforms
**==> picture [113 x 96] intentionally omitted <==**
**----- Start of picture text -----**
VG
Qg
VGS
Qgs Qgd
Charge
**----- End of picture text -----**
Fig.4-2 Gate Charge Waveform
Rev.B 7/7
Appendix
Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office.
## **ROHM** Customer Support System
## www.rohm.com
**THE AMERICAS** / **EUPOPE** / **ASIA** / **JAPAN**
**Contact us** : webmaster@ rohm.co.jp
Copyright Β© 2007 ROHM CO.,LTD.
21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
TEL : +81-75-311-2121 FAX : +81-75-315-0172
Appendix1-Rev2.0
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