# Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7 A, 7 A, 0.029 ohm

![Product image](https://novapart.co/image/farnell:2706593/)

**URL**: https://novapart.co/products/QH8MA3TCR/dual-mosfet-complementary-n-and-p-channel-30-v-7-a
**SKU**: QH8MA3TCR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2290
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N and P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | TSMT |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2.5W |
| Power Dissipation P Channel | 2.5W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 7A |
| Continuous Drain Current Id P Channel | 7A |
| Drain Source On State Resistance N Channel | 0.029ohm |
| Drain Source On State Resistance P Channel | 0.048ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2706593/)

Datasheet 

## QH8MA3 

## 30V Nch+Pch Middle Power MOSFET 

## **l Outline** 

**==> picture [186 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|Symbol|Tr1:Nch|Tr2:Pch|
|VDSS|30V|-30V|
|RDS(on)(Max.)|29mΩ|48mΩ|
|ID|±7.0A|±5.5A|
|PD|2.5W|

**----- End of picture text -----**<br>


TSMT8 

## **l Features** 

## **l Inner circuit** 

1) Low on - resistance. 

2) Small Surface Mount Package (TSMT8). 

3) Pb-free lead plating ; RoHS compliant. 

- 4) Halogen Free. 

## **l Packaging specifications** 

## **l Application** Switching 

**==> picture [235 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|Embossed|
|Packing|
|Tape|
|Reel size (mm)|180|
|Type|Tape width (mm)|8|
|Basic ordering unit (pcs)|3000|
|Taping code|TR|
|Marking|MA3|

**----- End of picture text -----**<br>


## **l Absolute maximum ratings** (Ta = 25°C) **,unless otherwise specified.** 

**==> picture [493 x 231] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Value|
|Parameter|Symbol|Unit|
|Tr1:Nch|Tr2:Pch|
|Drain - Source voltage|VDSS|30|-30|V|
|Continuous drain current|ID|[*1]|±7.0|±5.5|A|
|Pulsed drain current|ID,|pulse|[*2]|±18|±18|A|
|Gate - Source voltage|VGSS|±20|±20|V|
|Avalanche energy, single pulse|EAS|[*4]|1.8|1.1|mJ|
|Avalanche current|IAS|[*4]|5.0|-4.0|A|
|PD|[*1]|2.5|
|total|
|Power dissipation|PD|[*3]|1.5|W|
|element|PD|[*3]|1.25|
|Junction temperature|Tj|150|℃|
|Range of storage temperature|Tstg|-55 to +150|℃|

**----- End of picture text -----**<br>


www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

1/19 

**QH8MA3** 

Datasheet 

## **l Thermal resistance** 

|Parameter|Symbol|Type|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|---|
|||||Min.|Typ.|Max.||
|Drain - Source breakdown<br>voltage|V(BR)DSS|Tr1|VGS= 0V, ID= 1mA|30|-|-|V|
|||Tr2|VGS= 0V, ID= -1mA|-30|-|-||
|Breakdown voltage<br>temperature coefficient|ΔV(BR)DSS <br>  ΔTj|(BR)DSS Tr1|ID= 1mA,  referenced to 25℃|-|21|-|mV/℃|
|||Tr2|ID= -1mA,  referenced to 25℃|-|-22|-||
|Zero gate voltage<br>drain current|IDSS|Tr1|VDS= 30V, VGS= 0V|-|-|1|μA|
|||Tr2|VDS= -30V, VGS= 0V|-|-|-1||
|Gate - Source<br>leakage current|IGSS|Tr1|VDS= 0V, VGS= ±20V|-|-|±100|nA|
|||Tr2|VDS= 0V, VGS= ±20V|-|-|±100||
|Gate threshold<br>voltage|VGS(th)|Tr1|VDS= VGS, ID= 1mA|1.0|-|2.5|V|
|||Tr2|VDS= VGS, ID= -1mA|-1.0|-|-2.5||
|Gate threshold voltage<br>temperature coefficient|ΔVGS(th) <br>  ΔTj|Tr1|ID= 1mA, referenced to 25℃|-|-3|-|mV/℃|
|||Tr2|ID= -1mA, referenced to 25℃|-|2.9|-||
|Static drain - source<br>on - state resistance|RDS(on)*5|Tr1|VGS= 10V, ID= 7.0A|-|22|29|mΩ|
||||VGS= 4.5V, ID= 5.0A|-|35|46||
|||Tr2|VGS= -10V, ID= -5.5A|-|37|48||
||||VGS= -4.5V, ID= -4.0A|-|55|72||
|Transconductance|gfs*5|Tr1|VDS= 5V, ID= 5A|2.7|-|-|S|
|||Tr2|VDS= -5V, ID= -4A|3.3|-|-||



- *1 Pw ≦ 1s, Limited only by maximum temperature allowed. 

- *2 Pw ≦ 10μs, Duty cycle ≦ 1% 

## *3 MOUNTED ON A CERAMIC BOARD 

- *4 Tr1: L ⋍ 100μH, VDD = 15V, RG = 25Ω, STARTING Tch = 25℃ Fig.3-1,3-2 

Tr2: L ⋍ 100μH, VDD = -15V, RG = 25Ω, STARTING Tch = 25℃ Fig.6-1,6-2 

*5 Pulsed 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**QH8MA3** 

Datasheet 

## **l Electrical characteristics** (Ta = 25°C) 

## **<Tr1>** 

|**<Tr1>**|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Input capacitance|Ciss|VGS= 0V<br>VDS= 15V<br>f = 1MHz|-|300|-|pF|
|Output capacitance|Coss||-|50|-||
|Reverse transfer capacitance|Crss||-|40|-||
|Turn - on delay time|td(on)*5|VDD ⋍15V, VGS= 10V<br>ID= 3.5A<br>RL= 4.3Ω<br>RG= 10Ω|-|7.2|-|ns|
|Rise time|tr*5||-|8.0|-||
|Turn - off delay time|td(off)*5||-|12|-||
|Fall time|tf*5||-|5.7|-||



## **<Tr2>** 

|**<Tr2>**|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Input capacitance|Ciss|VGS= 0V<br>VDS= -15V<br>f = 1MHz|-|480|-|pF|
|Output capacitance|Coss||-|85|-||
|Reverse transfer capacitance|Crss||-|65|-||
|Turn - on delay time|td(on)*5|VDD ⋍-15V, VGS= -10V<br>ID= -2.25A<br>RL= 6.7Ω<br>RG= 10Ω|-|8.0|-|ns|
|Rise time|tr*5||-|12|-||
|Turn - off delay time|td(off)*5||-|40|-||
|Fall time|tf*5||-|20|-||



www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

3/19 

**QH8MA3** 

Datasheet 

## **l Gate charge characteristics** (Ta = 25°C) 

|**<Tr1>**<br>Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Total gate charge<br>Qg*5<br>VDD ⋍15V<br>ID= 7A<br>VGS= 10V<br>-<br>7.2<br>-<br>nC<br>VGS= 4.5V<br>-<br>3.7<br>-<br>Gate - Source charge<br>Qgs*5<br>-<br>1.4<br>-<br>Gate - Drain charge<br>Qgd*5<br>-<br>1.3<br>-<br>**<Tr2>**<br>Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Total gate charge<br>Qg*5<br>VDD ⋍-15V<br>ID= -5.5A<br>VGS= -10V<br>-<br>10<br>-<br>nC<br>VGS= -4.5V<br>-<br>5.2<br>-<br>Gate - Source charge<br>Qgs*5<br>-<br>1.6<br>-<br>Gate - Drain charge<br>Qgd*5<br>-<br>1.9<br>-<br>~~== eee~~<br>~~==emees~~|
|---|
|**lBody diode electrical characteristics**(Source-Drain) (Ta= 25°C)|
|**<Tr1>**|
|Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Body diode continuous<br>forward current<br>IS<br>Ta= 25℃<br>-<br>-<br>1.0<br>A<br>Body diode<br>pulse current<br>ISP*2<br>-<br>-<br>18<br>Forward voltage<br>VSD*5<br>VGS= 0V, IS= 1A<br>-<br>-<br>1.2<br>V<br>~~Se~~|
|**<Tr2>**|
|Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Body diode continuous<br>forward current<br>IS<br>Ta= 25℃<br>-<br>-<br>-1.0<br>A<br>Body diode<br>pulse current<br>ISP*2<br>-<br>-<br>-18<br>Forward voltage<br>VSD*5<br>VGS= 0V, IS= -1A<br>-<br>-<br>-1.2<br>V<br>~~HE~~|
|www.rohm.com|
|© 2015 ROHM Co., Ltd. All rights reserved.<br>4/19<br>**20150730 - Rev.002**|



**20150730 - Rev.002** 

**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr1>** 

## Fig.1 Power Dissipation Derating Curve 

## Fig.2 Maximum Safe Operating Area 

## Fig.3 Normalized Transient Thermal Fig.4 Single Pulse Maximum Power Resistance vs. Pulse Width dissipation 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr1>** 

Fig.5 Typical Output Characteristics(I) 

## Fig.6 Typical Output Characteristics(II) 

Fig.7 Breakdown Voltage vs. Junction Temperature 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr1>** 

Fig.8 Typical Transfer Characteristics 

Fig.9 Gate Threshold Voltage vs. Junction Temperature 

Fig.10 Tranceconductance vs. Drain Current 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr1>** 

Fig.11 Drain Current Derating Curve 

Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 

Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

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**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr1>** 

Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) 

Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) 

Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr1>** 

Fig.17 Typical Capacitance vs. Drain - Source Voltage 

## Fig.19 Dynamic Input Characteristics 

## Fig.18 Switching Characteristics 

Fig.20 Source Current vs. Source Drain Voltage 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

10/19 

**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr2>** 

## Fig.1 Power Dissipation Derating Curve 

Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 

## Fig.2 Maximum Safe Operating Area 

Fig.4 Single Pulse Maximum Power dissipation 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

11/19 

**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr2>** 

Fig.5 Typical Output Characteristics(I) 

## Fig.6 Typical Output Characteristics(II) 

Fig.7 Breakdown Voltage vs. Junction Temperature 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

12/19 

**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr2>** 

Fig.8 Typical Transfer Characteristics 

Fig.9 Gate Threshold Voltage vs. Junction Temperature 

Fig.10 Tranceconductance vs. Drain Current 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

13/19 

**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr2>** 

Fig.11 Drain Current Derating Curve 

Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 

Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr2>** 

Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) 

Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) 

Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

15/19 

**QH8MA3** 

Datasheet 

## **l Electrical characteristic curves <Tr2>** 

Fig.17 Typical Capacitance vs. Drain - Source Voltage 

Fig.19 Dynamic Input Characteristics 

## Fig.18 Switching Characteristics 

Fig.20 Source Current vs. Source Drain Voltage 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**QH8MA3** 

Datasheet 

## **l Measurement circuits** <Tr1> 

## Fig.1-1 Switching Time Measurement Circuit 

Fig.2-1 Gate Charge Measurement Circuit 

Fig.3-1 Avalanche Measurement Circuit 

## Fig.1-2 Switching Waveforms 

Fig.2-2 Gate Charge Waveform 

Fig.3-2 Avalanche Waveform 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**QH8MA3** 

Datasheet 

## **l Measurement circuits** <Tr2> 

**==> picture [178 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.4-1 Switching Time Measurement Circuit<br>**----- End of picture text -----**<br>


Fig.5-1 Gate Charge Measurement Circuit 

**==> picture [127 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.4-2 Switching Waveforms<br>Pulse width<br>Ves yi 10%50%<br>Vos /| 90%<br>tavon rl] | t,<br>LT.<br>ton<br>Fig.5-2 Gate Charge Waveform<br>**----- End of picture text -----**<br>


Fig.6-1 Avalanche Measurement Circuit 

Fig.6-2 Avalanche Waveform 

## **l Notice** 

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

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**QH8MA3** 

Datasheet 

## **l Dimensions** 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.002** 

19/19 

Notice 

**==> picture [309 x 464] intentionally omitted <==**

**----- Start of picture text -----**<br>
Notes<br>1) The information contained herein is subject to change without notice.<br>2) Before you use our Products, please contact our sales representative and verify the latest specifica-<br>tions:<br>3) Although ROHM is continuously working to improve product reliability and quality, semicon-<br>ductors can break down and malfunction due to various factors.<br>Therefore, in order to prevent personal injury or fire arising from failure, please take safety<br>measures such as complying with the derating characteristics, implementing redundant and<br>fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no<br>responsibility for any damages arising out of the use of our Poducts beyond the rating specified<br>by ROHM.<br>4) Examples of application circuits, circuit constants and any other information contained herein are<br>provided only to illustrate the standard usage and operations of the Products. The peripheral<br>conditions must be taken into account when designing circuits for mass production.<br>5) The technical information specified herein is intended only to show the typical functions of and<br>examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,<br>any license to use or exercise intellectual property or other rights held by ROHM or any other<br>parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of<br>such technical information.<br>6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-<br>cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in<br>this document.<br>7) The Products specified in this document are not designed to be radiation tolerant.<br>8) For use of our Products in applications requiring a high degree of reliability (as exemplified<br>below), please contact and consult with a ROHM representative : transportation equipment (i.e.<br>cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety<br>equipment, medical systems, servers, solar cells, and power transmission systems.<br>9) Do not use our Products in applications requiring extremely high reliability, such as aerospace<br>equipment, nuclear power control systems, and submarine repeaters.<br>10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with<br>the recommended usage conditions and specifications contained herein.<br>11) ROHM has used reasonable care to ensur the accuracy of the information contained in this<br>document. However, ROHM does not warrants that such information is error-free, and ROHM<br>shall have no responsibility for any damages arising from any inaccuracy or misprint of such<br>information.<br>12) Please use the Products in accordance with any applicable environmental laws and regulations,<br>such as the RoHS Directive. For more details, including ROHS compatibility, please contact a<br>ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting<br>non-compliance with any applicable laws or regulations.<br>13) When providing our Products and technologies contained in this document to other countries,<br>you must abide by the procedures and provisions stipulated in all applicable export laws and<br>regulations, including without limitation the US Export Administration Regulations and the Foreign<br>Exchange and Foreign Trade Act.<br>14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of<br>ROHM.<br>**----- End of picture text -----**<br>


Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

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itentelietttel<br>**----- End of picture text -----**<br>


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