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PZU10DB2,115
Zener Single Diode, 10 V, 250 mW, SC-88A, 5 Pins, 150 °C, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Zener Single Diodes
- Diode Mounting: Surface Mount
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.07 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia **==> picture [47 x 51] intentionally omitted <==** ## **PZUxDB2 series** ## **Dual Zener diodes** **Rev. 01 — 31 March 2008** ## **Product data sheet** ## **1.** ## **1.1 General description** Dual isolated general-purpose Zener diodes in SOT353 (SC-88A) very small Surface-Mounted Device (SMD) standard plastic and dark-green plastic packages. ## **1.2 Features** - I Non-repetitive peak reverse power dissipation: PZSM = 40 W - I Total power dissipation: Ptot ≤ 250 mW - I Tolerance series: B2: approximately ±2 % - I Wide working voltage range: nominal 2.7 V to 24 V - I - I Small standard plastic package suitable for surface-mounted design - I Small dark-green, halogen-free plastic package suitable for surface-mounted design - I ## **1.3 Applications** - I General regulation functions ## **1.4 Quick reference data** ## **Table 1. Quick reference data** |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**Per diode**||||||| |VF|forward voltage|IF= 100 mA|[1] -|-|1.1|V| |PZSM|non-repetitive peak reverse||[2] -|-|40|W| ||power dissipation|||||| - [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. - [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge **==> picture [211 x 101] intentionally omitted <==** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** ## **2. Pinning information** ## **Table 2. Pinning** |**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**| |---|---|---|---|---|---|---| |1<br>anode (diode 1)<br>2<br>not connected<br>3<br>anode (diode 2)<br>4<br>cathode (diode 2)<br>5<br>cathode (diode 1)||1<br>3<br>2<br>4<br>5<br>006aab219<br>1<br>3<br>5<br>4<br>2||||| |||5||||4| |||||||| |||||||| |||1||2||3| |||||||| |||||||| ## **3. Ordering information** **Table 3. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |PZU2.7DB2 to<br>PZU24DB~~2~~<br>[1]|SC-88A<br>plastic surface-mounted package; 5 leads<br>SOT353||| |PZU2.7DB2/DG to<br>PZU24DB2/D~~G~~<br>[1]<br>[2]|||| - [1] The series consists of 25 types with nominal working voltages from 2.7 V to 24 V. - [2] /DG: halogen-free plastic package ## **4. Marking** ## **Table 4. Marking codes** |**Type number**<br>**Marking cod**~~**e**~~<br>**[1]**|**Type numbe**~~**r**~~<br>**[2]**<br>**Marking cod**~~**e**~~<br>**[1]**| |---|---| |PZU2.7DB2<br>T1*|PZU2.7DB2/DG<br>U1*| |PZU3.0DB2<br>T2*|PZU3.0DB2/DG<br>U2*| |PZU3.3DB2<br>T3*|PZU3.3DB2/DG<br>U3*| |PZU3.6DB2<br>T4*|PZU3.6DB2/DG<br>U4*| |PZU3.9DB2<br>T5*|PZU3.9DB2/DG<br>U5*| |PZU4.3DB2<br>T6*|PZU4.3DB2/DG<br>U6*| |PZU4.7DB2<br>T7*|PZU4.7DB2/DG<br>U7*| |PZU5.1DB2<br>T8*|PZU5.1DB2/DG<br>U8*| |PZU5.6DB2<br>T9*|PZU5.6DB2/DG<br>U9*| |PZU6.2DB2<br>TA*|PZU6.2DB2/DG<br>UA*| |PZU6.8DB2<br>TB*|PZU6.8DB2/DG<br>UB*| |PZU7.5DB2<br>TC*|PZU7.5DB2/DG<br>UC*| |PZU8.2DB2<br>TD*|PZU8.2DB2/DG<br>UD*| |PZU9.1DB2<br>TE*|PZU9.1DB2/DG<br>UE*| © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **2 of 12** **NXP Semiconductors** **Dual Zener diodes** ## **PZUxDB2 series** **Table 4. Marking codes** …continued |**Type number**<br>**Marking cod**~~**e**~~|**[1]**|**Type numbe**~~**r**~~<br>**[2]**<br>**Marking cod**~~**e**~~<br>**[1]**| |---|---|---| |PZU10DB2<br>TF*||PZU10DB2/DG<br>UF*| |PZU11DB2<br>TG*||PZU11DB2/DG<br>UG*| |PZU12DB2<br>TH*||PZU12DB2/DG<br>UH*| |PZU13DB2<br>TK*||PZU13DB2/DG<br>UK*| |PZU14DB2<br>TL*||PZU14DB2/DG<br>UL*| |PZU15DB2<br>TM*||PZU15DB2/DG<br>UM*| |PZU16DB2<br>TN*||PZU16DB2/DG<br>UN*| |PZU18DB2<br>TP*||PZU18DB2/DG<br>UP*| |PZU20DB2<br>TR*||PZU20DB2/DG<br>UR*| |PZU22DB2<br>TS*||PZU22DB2/DG<br>US*| |PZU24DB2<br>TT*||PZU24DB2/DG<br>UT*| - [1] * = -: made in Hong Kong - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China - [2] /DG: halogen-free plastic package ## **5. Limiting values** ## **Table 5. Limiting values** In accordance with the Absolute Maximum Rating System (IEC 60134). |**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**||**Unit**| |---|---|---|---|---|---|---|---| |**Per diode**|||||||| |IF|forward current|||-|200||mA| |IZSM|non-repetitive peak reverse||[1]|-|see||| ||current||||T<br>ab<br>le|8|| |PZSM|non-repetitive peak reverse||[1]|-|40||W| ||power dissipation||||||| |**Per device**|||||||| |Ptot|total power dissipation|Tamb≤25°C|[2]|-|250||mW| ||||[3]|-|275||mW| |Tj|junction temperature|||-|150||°C| |Tamb|ambient temperature|||−55|+150||°C| |Tstg|storage temperature|||−65|+150||°C| - [1] tp = 100 µs; square wave; Tj = 25 °C prior to surge - [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. - [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm[2] . © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **3 of 12** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** ## **6. Thermal characteristics** **Table 6. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**Per device**|||||||| |Rth(j-a)|thermal resistance from<br>junction to ambient|in free air|[1] <br>[2]|-<br> -|-<br>-|500<br>455|K/W<br>K/W| |Rth(j-sp)|thermal resistance from||[3]|-|-|200|K/W| ||junction to solder point||||||| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. - [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm[2] . [3] Soldering points at pin 4 and pin 5. ## **7. Characteristics** ## **Table 7. Characteristics** Tj = 25 ° |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**Per diode**|| |VF<br>forward voltage|[1]| ||IF= 10 mA<br>-<br>-<br>0.9<br>V| ||IF= 100 mA<br>-<br>-<br>1.1<br>V| [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. **Table 8. Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG** Tj = 25 °C unless otherwise specified. |**PZUxDB2**<br>**PZUxDB2/DG**|**Working**<br>**voltage**<br>**VZ (V)**|**Working**<br>**voltage**<br>**VZ (V)**|**Differential resistance**<br>**rdif (**Ω**)**|**Differential resistance**<br>**rdif (**Ω**)**|**Reverse**<br>**current**<br>**IR (**µ**A)**|**Reverse**<br>**current**<br>**IR (**µ**A)**|**Temperature**<br>**coeffcient**<br>**SZ (mV/K)**|**Diode**<br>**capacitance**<br>**Cd (pF**~~**)**~~<br>**[1]**|**Non-repetitive**<br>**peak reverse**<br>**current**<br>**IZSM (A**~~**)**~~<br>**[2]**| |---|---|---|---|---|---|---|---|---|---| ||**IZ = 5 mA**||**IZ = 0.5 mA**|**IZ = 5 mA**|||**IZ = 5 mA**||| ||**Min**|**Max**|**Max**|**Max**|**Max**|**VR (V)**|**Typ**|**Max**|**Max**| |2.7|2.65<br>2.9<br>1000<br>100<br>20<br>1||||||−2.0<br>440<br>8||| |3.0|2.95<br>3.2<br>1000<br>95<br>10<br>1||||||−2.1<br>425<br>8||| |3.3|3.25<br>3.5<br>1000<br>95<br>5<br>1||||||−2.4<br>410<br>8||| |3.6|3.55<br>3.8<br>1000<br>90<br>5<br>1||||||−2.4<br>390<br>8||| |3.9|3.87<br>4.1<br>1000<br>90<br>3<br>1||||||−2.5<br>370<br>8||| |4.3|4.15<br>4.34<br>1000<br>90<br>3<br>1||||||−2.5<br>350<br>8||| |4.7|4.55<br>4.75<br>800<br>80<br>2<br>1||||||−1.4<br>325<br>8||| |5.1|4.98<br>5.2<br>250<br>60<br>2<br>1.5||||||0.3<br>300<br>5.5||| |5.6|5.49<br>5.73<br>100<br>40<br>1<br>2.5||||||1.9<br>275<br>5.5||| |6.2|6.06<br>6.33<br>80<br>30<br>0.5<br>3||||||2.7<br>250<br>5.5||| |6.8|6.65<br>6.93<br>60<br>20<br>0.5<br>3.5||||||3.4<br>215<br>5.5||| |7.5|7.28<br>7.6<br>60<br>10<br>0.5<br>4||||||4.0<br>170<br>3.5||| © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **4 of 12** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** **Table 8. Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG** …continued Tj = 25 °C unless otherwise specified. |**PZUxDB2**<br>**PZUxDB2/DG**|**Working**<br>**voltage**<br>**VZ (V)**|**Working**<br>**voltage**<br>**VZ (V)**|**Differential resistance**<br>**rdif (**Ω**)**|**Differential resistance**<br>**rdif (**Ω**)**|**Reverse**<br>**current**<br>**IR (**µ**A)**|**Reverse**<br>**current**<br>**IR (**µ**A)**|**Temperature**<br>**coeffcient**<br>**SZ (mV/K)**|**Diode**<br>**capacitance**<br>**Cd (pF**~~**)**~~<br>**[1]**|**Non-repetitive**<br>**peak reverse**<br>**current**<br>**IZSM (A**~~**)**~~<br>**[2]**| |---|---|---|---|---|---|---|---|---|---| ||**IZ = 5 mA**||**IZ = 0.5 mA**|**IZ = 5 mA**|||**IZ = 5 mA**||| ||**Min**|**Max**|**Max**|**Max**|**Max**|**VR (V)**|**Typ**|**Max**|**Max**| |8.2|8.02<br>8.36<br>60<br>10<br>0.5<br>5||||||4.6<br>150<br>3.5||| |9.1|8.85<br>9.23<br>60<br>10<br>0.5<br>6||||||5.5<br>120<br>3.5||| |10|9.77<br>10.21<br>60<br>10<br>0.1<br>7||||||6.4<br>110<br>3.5||| |11|10.76<br>11.22<br>60<br>10<br>0.1<br>8||||||7.4<br>108<br>3||| |12|11.74<br>12.24<br>80<br>10<br>0.1<br>9||||||8.4<br>105<br>3||| |13|12.91<br>13.49<br>80<br>10<br>0.1<br>10||||||9.4<br>103<br>2.5||| |14|13.7<br>14.3<br>80<br>10<br>0.1<br>11||||||10.4<br>101<br>2||| |15|14.34<br>14.98<br>80<br>15<br>0.05<br>11||||||11.4<br>99<br>2||| |16|15.85<br>16.51<br>80<br>20<br>0.05<br>12||||||12.4<br>97<br>1.5||| |18|17.56<br>18.35<br>80<br>20<br>0.05<br>13||||||14.4<br>93<br>1.5||| |20|19.52<br>20.39<br>100<br>20<br>0.05<br>15||||||16.4<br>88<br>1.5||| |22|21.54<br>22.47<br>100<br>25<br>0.05<br>17||||||18.4<br>84<br>1.3||| |24|23.72<br>24.78<br>120<br>30<br>0.05<br>19||||||20.4<br>80<br>1.3||| [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **5 of 12** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab215<br>10 [3]<br>PZSM<br>(W)<br>10 [2]<br>10<br>1<br>10 [−][4] 10 [−][3] 10 [−][2]<br>tp (s)<br>**----- End of picture text -----**<br> Tj = 25 °C (prior to surge) **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> mbg781<br>300<br>IF<br>(mA)<br>200<br>100<br>0<br>0.6 0.8 1<br>VF (V)<br>**----- End of picture text -----**<br> Tj = 25 °C **Fig 1. Non-repetitive peak reverse power dissipation Fig 2. Forward current as a function of forward as a function of pulse duration; maximum voltage; typical values values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab216<br>0<br>SZ<br>(mV/K) 4.3<br>−1<br>3.9<br>3.6<br>−2<br>3.3<br>3.0<br>2.7<br>−3<br>0 20 40 60<br>IZ (mA)<br>**----- End of picture text -----**<br> Tj = 25 °C to 150 °C PZU2.7DB2 to PZU4.3DB2 PZU2.7DB2/DG to PZU4.3DB2/DG **Fig 3. working current; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> mgl274<br>10<br>12<br>SZ 11<br>(mV/K)<br>10<br>9.1<br>5<br>8.2<br>7.5<br>6.8<br>6.2<br>5.6<br>5.1<br>0<br>4.7<br>−5<br>0 4 8 12 16 20<br>IZ (mA)<br>**----- End of picture text -----**<br> Tj = 25 °C to 150 °C PZU4.7DB2 to PZU12DB2 PZU4.7DB2/DG to PZU12DB2/DG **Fig 4. working current; typical values** © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **6 of 12** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** **==> picture [497 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab217 006aab218<br>10 [2] 10 [2]<br>IZ VZ(nom) (V) = 2.7 IZ VZ(nom) (V) = 6.8<br>(mA) (mA)<br>7.5<br>10 3.03.33.63.94.3 5.1 5.6 6.2 10 8.29.1101112 16 18 20 22 24<br>1 4.7 1 13<br>14<br>15<br>10 [−][1] 10 [−][1]<br>10 [−][2] 10 [−][2]<br>10 [−][3] 10 [−][3]<br>0 1 2 3 4 5 6 7 0 5 10 15 20 25<br>VZ (V) VZ (V)<br>Tj = 25 °C Tj = 25 °C<br>PZU2.7DB2 to PZU6.2DB2 PZU6.8DB2 to PZU24DB2<br>PZU2.7DB2/DG to PZU6.2DB2/DG PZU6.8DB2/DG to PZU24DB2/DG<br>Fig 5. Working current as a function of working Fig 6. Working current as a function of working<br>voltage; typical values voltage; typical values<br>**----- End of picture text -----**<br> ## **8. Test information** ## **8.1 Quality information** (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **7 of 12** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** ## **9. Package outline** **==> picture [237 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2 1.1<br>1.8 0.8<br>5 4 0.45<br>0.15<br>2.2 1.35<br>2.0 1.15<br>1 2 3<br>0.3 0.25<br>0.65<br>0.2 0.10<br>1.3<br>Dimensions in mm 04-11-16<br>**----- End of picture text -----**<br> **Fig 7. Package outline SOT353 (SC-88A)** ## **10. Packing information** **Table 9. Packing methods** The indicated -xxx are the last three digits of the 12NC ordering code ~~.~~ [1] |**Type number**<br>**Package**<br>**Description**|**Packing quantity**|**Packing quantity**| |---|---|---| ||**3000**|**10000**| |PZU2.7DB2 to<br>PZU24DB2<br>SOT353<br>4 mm pitch, 8 mm tape and reel<br>PZU2.7DB2/DG to<br>PZU24DB2/DG|-115<br>-135|| [1] For further information and the availability of packing methods, see Section 13. © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **8 of 12** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** ## **11. Soldering** **==> picture [286 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> 2.65<br>0.60<br>(1×)<br>2.35 0.40 0.90 2.10<br>0.50<br>(4×)<br>0.50<br>solder lands (4×)<br>solder paste 1.20<br>solder resist<br>2.40<br>occupied area<br>Dimensions in mm sot353_fr<br>**----- End of picture text -----**<br> ## **Fig 8.** **==> picture [334 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> 2.25 2.65<br>4.50 2.70 0.70 0.30 1.00 4.00<br>1.15<br>solder lands 3.75<br>solder resist transport direction during soldering<br>occupied area<br>Dimensions in mm<br>**----- End of picture text -----**<br> **Fig 9. Wave soldering footprint SOT353 (SC-88A)** © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **9 of 12** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** ## **12. Revision history** |**Table 10.**|**Revision**|**history**|||| |---|---|---|---|---|---| |**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |PZUXDB2_SER_1||20080331|Product data sheet|-|-| © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **10 of 12** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** ## **13. Legal information** ## **13.1 Data sheet status** |**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**| |---|---| |Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.|| |Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.|| |Product [short] data sheet<br>Production<br>This document contains the product specifcation.|| [1] Please consult the most recently issued document before initiating or completing a design. [2] [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **13.2** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **13.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ## **13.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **14. Contact information** For more information, please visit: **http://www.nxp.com** **salesaddresses@nxp.com** © NXP B.V. 2008. All rights reserved. PZUXDB2_SER_1 **Product data sheet** **Rev. 01 — 31 March 2008** **11 of 12** **PZUxDB2 series** **NXP Semiconductors** **Dual Zener diodes** ## **15. Contents** |**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**6**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 4**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4**| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7**| |8.1|Quality information . . . . . . . . . . . . . . . . . . . . . . 7| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**10**|**Packing information. . . . . . . . . . . . . . . . . . . . . . 8**| |**11**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**12**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10**| |**13**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 11**| |13.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11| |13.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |13.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |13.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**14**|**Contact information. . . . . . . . . . . . . . . . . . . . . 11**| |**15**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**| **==> picture [151 x 121] intentionally omitted <==** Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2008.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 31 March 2008 Document identifier: PZUXDB2_SER_1**
Updated at February 9, 2023
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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