# Bipolar (BJT) Single Transistor, PNP, 450 V, 500 mA, 1.5 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2845327/)

**URL**: https://novapart.co/products/PZTA96ST1G/bipolar-bjt-single-transistor-pnp-450-v-500-ma-15
**SKU**: PZTA96ST1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1830
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-450V; Transition Frequency ft:-; Power Dissipation Pd:1.5W; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Tra

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | - |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 450V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845327/)

PZTA96ST1G 

## High Voltage Transistor 

## **PNP Silicon** 

## **Features** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS** 

|**Rating**<br>~~ene~~|**Symbol**<br>~~ene~~|**Value**<br>~~ene~~|**Unit**<br>~~ene~~|
|---|---|---|---|
|Collector−Emitter Voltage<br>~~ene~~|VCEO<br>~~ene~~|−450<br>~~ene~~|Vdc<br>~~ene~~|
|Collector−Base Voltage<br>~~ene~~|VCBO<br>~~ene~~|−450<br>~~ene~~|Vdc<br>~~ene~~|
|Emitter−Base Voltage<br>~~ene~~|VEBO<br>~~ene~~|−5.0<br>~~ene~~|Vdc<br>~~ene~~|
|Collector Current<br>~~ene~~|IC<br>~~ene~~|−500<br>~~ene~~|mAdc<br>~~ene~~|
|Total Power Dissipation Up to<br>TA= 25°C (Note 1)<br>~~ene~~|PD<br>~~ene~~|1.5<br>~~ene~~|W<br>~~ene~~|
|Storage Temperature Range<br>~~ene~~|Tstg<br>~~ene~~|−65 to +150<br>~~ene~~|°C<br>~~ene~~|
|Junction Temperature<br>~~ene~~|TJ<br>~~ene~~|150<br>~~ene~~|°C<br>~~ene~~|



1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in[2] . 

## **http://onsemi.com** 

**==> picture [87 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR 2,4<br>BASE<br>1<br>EMITTER 3<br>4<br>1<br>2<br>3<br>SOT−223 (TO−261)<br>CASE 318E<br>STYLE 1<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance,<br>Junction−to−Ambient (Note 2)|R JA|83.3|°C|



2. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. 

   - x 0.059 in.; mounting pad for the collector lead min. 0.93 in[2] . 

## **ELECTRICAL CHARACTERISTICS** (Note 3) 

|**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~Po~~|
|---|
|Collector−Emitter Breakdown Voltage<br>(IC= −1.0 mAdc, IB= 0)<br>V(BR)CEO<br>−450<br>−<br>Vdc<br>Collector−Emitter Breakdown Voltage<br>(IC= −100 Adc, IE= 0)<br>V(BR)CBO<br>−450<br>−<br>Vdc<br>Emitter−Base Breakdown Voltage<br>(IE= −10 Adc, IC= 0)<br>V(BR)EBO<br>−5.0<br>−<br>Vdc<br>Collector−Base Cutoff Current<br>(VCB= −400 Vdc, IE= 0)<br>ICBO<br>−<br>−0.1<br>Adc<br>Emitter−Base Cutoff Current<br>(VBE= −4.0 Vdc, IC= 0)<br>IEBO<br>−<br>−0.1<br>Adc<br>~~a~~<br>~~SrTT~~<br>~~Se~~<br>~~ee~~|
|**ON CHARACTERISTICS**|
|DC Current Gain (Note 4)<br>hFE<br>−|
|(IC= −10 mAdc, VCE= −10 Vdc)<br>50<br>150|
|Saturation Voltages<br>Vdc|
|(IC= −20 mAdc, IB= −2.0 mAdc)<br>(IC= −20 mAdc, IB= −2.0 mAdc)<br>VCE(sat)<br>VBE(sat)<br>−<br>−<br>−0.6<br>−1.0|



**==> picture [93 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
AYW<br>ZTA96<br>1<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Package**<br>**Shipping**†|
|---|---|---|
|PZTA96ST1G|SOT−223<br>(Pb−Free)|SOT−223<br>(Pb−Free)<br>1000/Tape & Reel|



   - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

3. TA = 25 ° C unless otherwise noted. 

4. Pulse Test: Pulse Width ≤ 300 s; Duty Cycle = 2.0%. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 5** 

**PZTA96ST1/D** 

**PZTA96ST1G** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 0.4<br>VCE = 10 V<br>150 ° C IC/IB = 10<br>25 ° C 0.3<br>100<br>−55 ° C 150 ° C 25 ° C −55 ° C<br>0.2<br>10<br>0.1<br>1 0<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage<br>1.0 1.0<br>0.8 −55 ° C 0.8 −55 ° C<br>25 ° C 25 ° C<br>0.6 0.6<br>0.4 0.4<br>150 ° C 150 ° C<br>0.2 0.2<br>IC/IB = 10 VCE = 10 V<br>0 0<br>0.1 1 10 100 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>VOLTAGE (V)<br>, DC CURRENT GAIN<br>, COLL−EMIT SATURATION<br>FE<br>h<br>CE(sat)<br>V<br>VOLTAGE (V) , BASE−EMITTER ON VOLTAGE (V)<br>, BASE−EMIT SATURATION<br>BE(on)<br>V<br>BE(sat)<br>V<br>**----- End of picture text -----**<br>


**Figure 3. Base−Emitter Saturation Voltage** 

**Figure 4. Base−Emitter “On” Voltage** 

**==> picture [243 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>Cib<br>100<br>Cob<br>10<br>1<br>0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Capacitances** 

**==> picture [240 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VCE = 2 V<br>10<br>1<br>0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA)<br>PRODUCT (MHz)<br>, CURRENT−GAIN−BANDWIDTH<br>fT<br>**----- End of picture text -----**<br>


**Figure 6. Current−Gain−Bandwidth Product** 

**http://onsemi.com** 

**2** 

**PZTA96ST1G** 

## **PACKAGE DIMENSIONS** 

**SOT−223 (TO−261)** CASE 318E−04 ISSUE N 

**==> picture [473 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>b1 NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCH.<br>4 MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>HE E A 1.50 1.63 1.75 0.060 0.064 0.068<br>1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004<br>b 0.60 0.75 0.89 0.024 0.030 0.035<br>b1 2.90 3.06 3.20 0.115 0.121 0.126<br>c 0.24 0.29 0.35 0.009 0.012 0.014<br>b D 6.30 6.50 6.70 0.249 0.256 0.263<br>e1 Ee 3.302.20 3.502.30 3.702.40 0.1300.087 0.1380.091 0.1450.094<br>fot e e1 0.85 0.94 1.05 0.033 0.037 0.041<br>L 0.20 −−− −−− 0.008 −−− −−−<br>C L1 1.50 1.75 2.00 0.060 0.069 0.078<br>1 a H E 6.70 7.00 7.30 0.264 0.276 0.287<br>A 0° − 1 0° 0° − 1 0°<br>= 0.08 (0003) A1 STYLE 1:<br>L L1 PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

**==> picture [173 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.8<br>0.15<br>_ [T] [T]<br>2.0<br>0.079<br>roy<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>mar 1.5  eives SCALE 6:1 e mm<br>— f — (—) inches<br>0.059<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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**PZTA96ST1/D** 

**3** 



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