# Bipolar (BJT) Single Transistor, PNP, 60 V, 600 mA, 1.5 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2533343/)

**URL**: https://novapart.co/products/PZT2907AT3G/bipolar-bjt-single-transistor-pnp-60-v-600-ma-15-w
**SKU**: PZT2907AT3G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1340
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.5W; DC Collector Current:-600mA; DC Current Gain hFE:50hFE

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 200MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2533343/)

## PZT2907A 

## PNP Silicon Epitaxial Transistor 

This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. 

## **http://onsemi.com** 

## **Features** 

**==> picture [85 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>1<br>2<br>3<br>SOT−223<br>CASE 318E<br>STYLE 1<br>COLLECTOR<br>2, 4<br>1<br>BASE<br>©<br>3<br>EMITTER<br>**----- End of picture text -----**<br>


- NPN Complement is PZT2222AT1 

- The SOT-223 Package can be Soldered Using Wave or Reflow 

- SOT-223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of Soldered Joints. The Formed Leads Absorb Thermal Stress during Soldering Eliminating the Possibility of Damage to the Die 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

- **MAXIMUM RATINGS** 

## **MARKING DIAGRAM** 

**Rating Symbol Value Unit** Collector−Emitter Voltage VCEO −60 Vdc Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc ~~==~~ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

**==> picture [115 x 100] intentionally omitted <==**

**----- Start of picture text -----**<br>
AYW<br>P2F<br>1<br>P2F = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||||(Note: Microdot may be in either location)|(Note: Microdot may be in either location)|
|---|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Max**|**Unit**||**ORDERING INFORMATION**||
|Total Device Dissipation (Note 1)<br>TA= 25°C<br>Thermal Resistance Junction−to−Ambient<br>(Note 1)<br>Lead Temperature for Soldering,<br>0.0625″from case<br>Time in Solder Bath<br>Operating and Storage Temperature Range||PD<br>R JA<br>TL<br>TJ, Tstg|1.5<br>12<br>83.3<br>260<br>10<br>−65 to<br>+150|W<br>mW/°C<br>°C/W<br>°C<br>Sec<br>°C||**Device**<br>**Package**<br>**Shipping**†<br>PZT2907AT1G<br>SOT−223<br>(Pb−Free)<br>1,000 / Tape & Reel<br>PZT2907AT3G<br>SOT−223<br>(Pb−Free)<br>4,000 / Tape & Reel<br>SPZT2907AT1G<br>SOT−223<br>(Pb−Free)<br>1,000 / Tape & Reel<br>~~==~~||
|1. FR−4 with 1 oz and 713 mm2 of copper area.||||||†For information on tape and reel specifications,<br>including part orientation and tape sizes, please||
|||||||refer to our Tape and Reel Packaging Specifications||
|||||||Brochure, BRD8011/D.||



1. FR−4 with 1 oz and 713 mm[2] of copper area. 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **PZT2907AT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **August, 2013 − Rev. 10** 

## **PZT2907A** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise not|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise not|ed)|||||
|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Collector−Base Breakdown Voltage<br>(IC= −10�Adc, IE= 0)||V(BR)CBO|−60|−|−|Vdc|
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mAdc, IB= 0)||V(BR)CEO|−60|−|−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= −10�Adc, IC= 0)||V(BR)EBO|−5.0|−|−|Vdc|
|Collector−Base Cutoff Current<br>(VCB= −50 Vdc, IE= 0)||ICBO|−|−|−10|nAdc|
|Collector−Emitter Cutoff Current<br>(VCE= −30 Vdc, VBE= 0.5 Vdc)||ICEX|−|−|−50|nAdc|
|Base−Emitter Cutoff Current<br>(VCE= −30 Vdc, VBE= −0.5 Vdc)||IBEX|−|−|−50|nAdc|
|**ON CHARACTERISTICS**(Note 2)|||||||
|DC Current Gain<br>(IC= −0.1 mAdc, VCE= −10 Vdc)<br>(IC= −1.0 mAdc, VCE= −10 Vdc)<br>(IC= −10 mAdc, VCE= −10 Vdc)<br>(IC= −150 mAdc, VCE= −10 Vdc)<br>(IC= −500 mAdc, VCE= −10 Vdc)||hFE|75<br>100<br>100<br>100<br>50|−<br>−<br>−<br>−<br>−|−<br>−<br>−<br>300<br>−|−|
|Collector-Emitter Saturation Voltages<br>(IC= −150 mAdc, IB= −15 mAdc)<br>(IC= −500 mAdc, IB= −50 mAdc)||VCE(sat)|−<br>−|−<br>−|−0.4<br>−1.6|Vdc|
|Base-Emitter Saturation Voltages<br>(IC= −150 mAdc, IB= −15 mAdc)<br>(IC= −500 mAdc, IB= −50 mAdc)||VBE(sat)|−<br>−|−<br>−|−1.3<br>−2.6|Vdc|
|**DYNAMIC CHARACTERISTICS**|||||||
|Current-Gain − Bandwidth Product<br>(IC= −50 mAdc, VCE= −20 Vdc, f = 100 MHz)||fT|200|−|−|MHz|
|Output Capacitance<br>(VCB= −10 Vdc, IE= 0, f = 1.0 MHz)||Cc|−|−|8.0|pF|
|Input Capacitance<br>(VEB= −2.0 Vdc, IC= 0, f = 1.0 MHz)||Ce|−|−|30|pF|
|**SWITCHING TIMES**|||||||
|Turn-On Time|(VCC= −30 Vdc, IC= −150 mAdc,<br>IB1= −15 mAdc)|ton|−|−|45|ns|
|Delay Time||td|−|−|10||
|Rise Time||tr|−|−|40||
|Turn-Off Time|(VCC= −6.0 Vdc, IC= −150 mAdc,<br>IB1= IB2= −15 mAdc)|toff|−|−|100|ns|
|Storage Time||ts|−|−|80||
|Fall Time||tf|−|−|30||



2. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

**http://onsemi.com** 

**2** 

**PZT2907A** 

**==> picture [487 x 126] intentionally omitted <==**

**----- Start of picture text -----**<br>
-�30 V +15 V -�6.0 V<br>INPUT INPUT<br>200 1.0 k 37<br>Zo = 50 � Zo = 50 �<br>PRF = 150 Hz PRF = 150 Hz<br>RISE TIME ≤ 2.0 ns RISE TIME ≤ 2.0 ns<br>1.0 k TO OSCILLOSCOPE 1.0 k TO OSCILLOSCOPE<br>0 RISE TIME ≤ 5.0 ns 0 RISE TIME ≤ 5.0 ns<br>-�16 V 50 -�30 V<br>50 1N916<br>200 ns 200 ns<br>**----- End of picture text -----**<br>


**Figure 1. Delay and Rise Time Test Circuit** 

**Figure 2. Storage and Fall Time Test Circuit** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

**==> picture [488 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1000<br>T J  = 125°C<br>T J  = 25°C<br>100 100<br>TJ = -�55°C<br>VCE = -�20 V<br>T J  = 25°C<br>10 10<br>-�0.1 -1.0 -10 -100 -1000 -1.0 -10 -100 -1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. DC Current Gain Figure 4. Current Gain Bandwidth Product<br>-1.0 30<br>TJ = 25 ° C<br>20<br>-�0.8 V BE(sat)  @ I C /I B  = 10 Ceb<br>-�0.6 V BE(on)  @ V CE  = -10 V 10<br>7.0<br>-�0.4<br>5.0 C cb<br>-�0.2<br>3.0<br>V CE(sat)  @ I C /I B  = 10<br>0 2.0<br>-�0.1 -�0.2 -�0.5 -1.0 -�2.0 -�5.0 -10 -�20 -�50 -100-�200 -�500 -�0.1 -�0.2 -�0.3 -�0.5 -�0.7 -1.0 -�2.0 -�3.0 -�5.0 -�7.0 -10 -�20 -�30<br>IC, COLLECTOR CURRENT (mA) REVERSE VOLTAGE (VOLTS)<br>hFE, CURRENT GAIN<br>fT, CURRENT‐GAIN BANDWIDTH PRODUCT (MHz)<br>VOLTAGE (VOLTS) CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. “ON” Voltage** 

**Figure 6. Capacitances** 

**http://onsemi.com** 

**3** 

**PZT2907A** 

## **PACKAGE DIMENSIONS** 

**SOT−223 (TO−261)** CASE 318E−04 ISSUE N 

**==> picture [474 x 407] intentionally omitted <==**

**----- Start of picture text -----**<br>
D ISSUE N<br>b1 NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCH.<br>4 MILLIMETERS INCHES<br>tL - DIM MIN NOM MAX MIN NOM MAX<br>HE E A 1.50 1.63 1.75 0.060 0.064 0.068<br>1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004<br>b 0.60 0.75 0.89 0.024 0.030 0.035<br>b1 2.90 3.06 3.20 0.115 0.121 0.126<br>c 0.24 0.29 0.35 0.009 0.012 0.014<br>b D 6.30 6.50 6.70 0.249 0.256 0.263<br>e1 Ee 3.302.20 3.502.30 3.702.40 0.1300.087 0.1380.091 0.1450.094<br>fo e e1 0.85 0.94 1.05 0.033 0.037 0.041<br>L 0.20 −−− −−− 0.008 −−− −−−<br>C L1 1.50 1.75 2.00 0.060 0.069 0.078<br>i , = H E 6.70 7.00 7.30 0.264 0.276 0.287<br>A 0° − 1 0° 0° − 1 0°<br>0.08 (0003) STYLE 1:<br>A A1 L Gy L1 ESSE PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>SOLDERING FOOTPRINT*<br>3.8<br>0.15<br>_ _an<br>2.0<br>0.079<br>SEF} 7<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>“EET<br>1.5 SCALE 6:1 mm<br>_ | 0.059 — (—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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**PZT2907AT1/D** 

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**4** 



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