# Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 1.5 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2533342/)

**URL**: https://novapart.co/products/PZT2222AT3G/bipolar-bjt-single-transistor-npn-40-v-600-ma-15-w
**SKU**: PZT2222AT3G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1340
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1.5W; DC Collector Current:600mA; DC Current Gain hFE:35hFE; T

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 300MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 35hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2533342/)

## PZT2222A 

## NPN Silicon Planar Epitaxial Transistor 

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. 

## **http://onsemi.com** 

## **SOT−223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT** 

## **Features** 

- PNP Complement is PZT2907AT1 

- The SOT−223 Package Can be Soldered Using Wave or Reflow 

- SOT−223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of Soldered Joints 

**==> picture [5 x 5] intentionally omitted <==**

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4<br>**----- End of picture text -----**<br>


1 2 3 **SOT−223 (TO−261) CASE 318E−04 STYLE 1** 

- The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die 

- Available in 12 mm Tape and Reel 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

COLLECTOR 

Site and Control Change Requirements; AEC−Q101 Qualified and 2, 4 PPAP Capable BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 Compliant* ~~©~~ 3 **MAXIMUM RATINGS** EMITTER **Rating Symbol Value Unit MARKING DIAGRAM** Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc AYM Emitter−Base Voltage VEBO 6.0 Vdc P1F (Open Collector) Collector Current IC 600 mAdc Total Power Dissipation PD W A =  Assembly Location up to TA = 25 ° C (Note 1) 1.5 Y =  Year Storage Temperature Range ° Tstg −65 to +150 ° C M = Month Code= Pb−Free Package Junction Temperature ° TJ 150 ° C (Note: Microdot may be in either location) ~~=~~ & Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended **ORDERING INFORMATION** Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **Device Package Shipping**[†] 1. Device mounted on an epoxy printed circuit board 1.575 inches  x 1.575 inches  x 0.059 inches; mounting pad for the collector lead min. 0.93 inches[2] . PZT2222AT1G SOT−223 1,000 Tape & Reel (Pb−Free) **THERMAL CHARACTERISTICS** SPZT2222AT1G SOT−223 1,000 Tape & Reel (Pb−Free) **Rating Symbol Value Unit** Thermal Resistance, R JA 83.3 ° C/W PZT2222AT3G (Pb−Free)SOT−223 4,000 Tape & Reel Junction−to−Ambient Lead Temperature for Soldering,0.0625 ″ from case TL 26010 Sec ° C †For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specifications Time in Solder Bath Brochure, BRD8011/D. ~~Sag~~ *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **PZT2222AT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **August, 2013 − Rev. 9** 

**PZT2222A** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage (IC= 10 mAdc, IB= 0)||V(BR)CEO|40|−|Vdc|
|Collector−Base Breakdown Voltage (IC= 10�Adc, IE= 0)||V(BR)CBO|°75°|−|Vdc|
|Emitter−Base Breakdown Voltage (IE= 10�Adc, IC= 0)||V(BR)EBO|6.0|−|Vdc|
|Base−Emitter Cutoff Current (VCE= 60 Vdc, VBE= −3.0 Vdc)||IBEX|−|20|nAdc|
|Collector−Emitter Cutoff Current (VCE= 60 Vdc, VBE= −3.0 Vdc)||ICEX|−|10|nAdc|
|Emitter−Base Cutoff Current (VEB= 3.0 Vdc, IC= 0)||IEBO|−|100|nAdc|
|Collector−Base Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>(VCB= 60 Vdc, IE= 0, TA= 125°C)||ICBO|−<br>−|10<br>10|nAdc<br>�Adc|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 0.1 mAdc, VCE= 10 Vdc)<br>(IC= 1.0 mAdc, VCE= 10 Vdc)<br>(IC= 10 mAdc, VCE= 10 Vdc)<br>(IC= 10 mAdc, VCE= 10 Vdc, TA= −55°C)<br>(IC= 150 mAdc, VCE= 10 Vdc)<br>(IC= 150 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 10 Vdc)||hFE|35<br>50<br>70<br>35<br>100<br>50<br>40|−<br>−<br>−<br>−<br>300<br>−<br>−|−|
|Collector−Emitter Saturation Voltages<br>(IC= 150 mAdc, IB= 15 mAdc)<br>(IC= 500 mAdc, IB= 50 mAdc)||VCE(sat)|−<br>−|0.3<br>1.0|Vdc|
|Base−Emitter Saturation Voltages<br>(IC= 150 mAdc, IB= 15 mAdc)<br>(IC= 500 mAdc, IB= 50 mAdc)||VBE(sat)|0.6<br>−|1.2<br>2.0|Vdc|
|Input Impedance°<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>(VCE= 10 Vdc, IC= 10 mAdc, f = 1.0 kHz)||°hie°|2.0<br>0.25|8.0<br>1.25|k�|
|Voltage Feedback Ratio<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>(VCE= 10 Vdc, IC= 10 mAdc, f = 1.0 kHz)||hre|−<br>−|8.0x10−4<br>4.0x10−4|−|
|Small−Signal Current Gain<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>(VCE= 10 Vdc, IC= 10 mAdc, f = 1.0 kHz)||�hfe�|50<br>75|300<br>375|−|
|Output Admittance°<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>(VCE= 10 Vdc, IC= 10 mAdc, f = 1.0 kHz)||°hoe°|5.0<br>25|35<br>200|�mhos|
|Noise Figure (VCE= 10 Vdc, IC= 100�Adc, f = 1.0 kHz)||F|−|4.0|dB|
|**DYNAMIC CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 20 mAdc, VCE= 20 Vdc, f = 100 MHz)||fT|300|−|MHz|
|Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)||Cc|−|8.0|pF|
|Input Capacitance (VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)||Ce|−|25|pF|
|**SWITCHING TIMES **(TA= 25°C)||||||
|Delay Time|(VCC= 30 Vdc, IC= 150 mAdc,<br>IB(on)= 15 mAdc, VEB(off)= 0.5 Vdc)<br>Figure 1|td|−|10|ns|
|Rise Time||tr|−|25||
|Storage Time|(VCC= 30 Vdc, IC= 150 mAdc,<br>IB(on)= IB(off)= 15 mAdc)<br>Figure 2|ts|−|225|ns|
|Fall Time||tf|−|60||



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**2** 

**PZT2222A** 

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VCC<br>Vi<br>90% R2<br>R1 Vo<br>0 10% Vi D.U.T.<br>tr tp<br>**----- End of picture text -----**<br>


**Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time** 

**Vi = −0.5 V to +9.9 V, VCC = +30 V, R1 = 619 � , R2 = 200 � .** 

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PULSE GENERATOR: OSCILLOSCOPE:<br>PULSE DURATION tp 3 200 ns INPUT IMPEDANCE Zi > 100 k �<br>RISE TIME tr 3 2 ns INPUT CAPACITANCE Ci < 12 pF<br>DUTY FACTOR � = 0.02 RISE TIME tr < 5 ns<br>**----- End of picture text -----**<br>


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Vi VCC<br>+16.2 V<br>R2<br>D.U.T.<br>R1<br>0 Vi R3<br>TIME<br>Vo<br>OSCILLOSCOPE<br>D1<br>R4<br>-�13.8 V<br>tf 100 �s<br>VBB<br>Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time<br>TYPICAL CHARACTERISTICS<br>1 1.2<br>IC/IB = 10 1.1 I C /I B  = 10<br>1.0<br>0.9 TA = −55 ° C<br>0.8<br>0.1 TA = 25 ° C 0.7 TA = 25 ° C<br>TA = −55 ° C 0.6<br>T A  = 150 ° C 0.5<br>0.4 T A  = 150 ° C<br>0.3<br>0.01 0.2<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, BASE−EMITTER<br>, COLLECTOR−EMITTER BE(sat)<br>VCE SATURATION VOLTAGE (V) V SATURATION VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 3. Collector Emitter Saturation Voltage vs. Collector Current** 

**Figure 4. Base Emitter Saturation Voltage vs. Collector Current** 

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**3** 

**PZT2222A** 

## **TYPICAL CHARACTERISTICS** 

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1000 2.0<br>VCE = 6 V 1.8 TA = 25 ° C<br>TA = 150 ° C 1.6<br>T A = 25 ° C 1.4<br>1.2<br>100 TA = −55 ° C 1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>10 0<br>0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 5. DC Current Gain vs. Collector Figure 6. Saturation Region<br>Current<br>1.1 100<br>VCE = 2 V<br>1.0<br>0.9 T A  = −55 ° C<br>C ibo<br>0.8<br>0.7 TA = 25 ° C 10 Cobo<br>0.6<br>0.5<br>0.4<br>TA = 150 ° C<br>0.3<br>0.2 1<br>0.1 1 10 100 1000 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)<br>Figure 7. Base−Emitter Turn−On Voltage vs. Figure 8. Capacitance<br>Collector Current<br>1000<br>1 s 0.0001<br>0.1<br>0.01<br>100<br>0.001<br>10<br>Single Pulse Test at T A  = 25 ° C<br>1<br>1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br> mA<br> = 1 mAIC 10 mA 001 300 mA 600 mA<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>C, CAPACITANCE (pF)<br>, BASE−EMITTER ON VOLTAGE (V)<br>BE(ON)<br>V<br>, COLLECTOR CURRENT (mA)<br>IC<br>**----- End of picture text -----**<br>


**Figure 9. Safe Operating Area** 

**http://onsemi.com** 

**4** 

**PZT2222A** 

## **PACKAGE DIMENSIONS** 

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SOT−223 (TO−261)<br>CASE 318E−04<br>D ISSUE N<br>b1 NOTES:<br>DIMENSIONING AND TOLERANCING PER ASME Y14.5M,<br>1994.<br>CONTROLLING DIMENSION: INCH.<br>T 4 MILLIMETERS INCHES<br>tl ep DIM MIN NOM MAX MIN NOM MAX<br>HE E A 1.50 1.63 1.75 0.060 0.064 0.068<br>1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004<br>b 0.60 0.75 0.89 0.024 0.030 0.035<br>b1 2.90 3.06 3.20 0.115 0.121 0.126<br>c 0.24 0.29 0.35 0.009 0.012 0.014<br>b D 6.30 6.50 6.70 0.249 0.256 0.263<br>e1 Ee 3.302.20 3.502.30 3.702.40 0.1300.087 0.1380.091 0.1450.094<br>fo e e1 0.85 0.94 1.05 0.033 0.037 0.041<br>L 0.20 −−− −−− 0.008 −−− −−−<br>C L1 1.50 1.75 2.00 0.060 0.069 0.078<br>1 ee H E 6.70 7.00 7.30 0.264 0.276 0.287<br>A 0° − 1 0° 0° − 1 0°<br>0.08 (0003) STYLE 1:<br>RR A1 L eS L1 PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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3.8<br>0.15<br>Pas<br>2.0<br>0.079<br>TEE<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>“A<br>1.5 SCALE 6:1 mm<br>— { 0.059 —| Le I inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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