# Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 1.15 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2439360/)

**URL**: https://novapart.co/products/PZT2222A,115/bipolar-bjt-single-transistor-npn-40-v-600-ma-115
**SKU**: PZT2222A,115
**Manufacturer**: NEXPERIA
**Price**: €0.1800
**Stock**: 10+
**Lead Time**: 373 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.15W; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transi

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.15W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 200MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2439360/)

## **Important notice** 

Dear Customer, 

On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets 

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. 

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** 

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) 

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: 

- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved 

Should be replaced with: 

- **© Nexperia B.V. (year). All rights reserved** . 

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, 

Kind regards, 

Team Nexperia 

## _**DISCRETE SEMICONDUCTORS**_ 

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DATA SHEET<br>**----- End of picture text -----**<br>


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handbook, halfpage<br>M3D087<br>**----- End of picture text -----**<br>


**PZT2222A** NPN switching transistor 

Product data sheet 1999 Apr 14 Supersedes data of 1997 Jun 02 

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**NXP Semiconductors** 

**Product data sheet** 

**PZT2222A** 

## **NPN switching transistor** 

## **FEATURES** 

- High current (max. 600 mA) 

- Low voltage (max. 40 V). 

## **APPLICATIONS** 

## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|base|
|2, 4|collector|
|3|emitter|



- Switching and linear amplification. 

## **DESCRIPTION** 

NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A. 

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handbook, halfpage 4<br>2, 4<br>1<br>3<br>1 2 3<br>Top view MAM287<br>Fig.1  Simplified outline (SOT223) and symbol.<br>**----- End of picture text -----**<br>


## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter|−|75|V|
|VCEO|collector-emitter voltage|open base|−|40|V|
|VEBO|emitter-base voltage|open collector|−|6|V|
|IC|collector current(DC)||−|600|mA|
|ICM|peak collector current||−|800|mA|
|IBM|peak base current||−|200|mA|
|Ptot|totalpower dissipation|Tamb ≤25°C; note 1|−|1.15|W|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operatingambient temperature||−65|+150|°C|



## **Note** 

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm[2] . For other mounting conditions, see _“Thermal considerations for SOT223 in the General Part of associated Handbook”._ 

1999 Apr 14 

2 

NXP Semiconductors 

Product data sheet 

## NPN switching transistor 

## PZT2222A 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rthj-a|thermal resistance fromjunction to ambient|note 1|109|K/W|
|Rthj-s|thermal resistance fromjunction to soldering point||28|K/W|



## **Note** 

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm[2] . For other mounting conditions, see _“Thermal considerations for SOT223 in the General Part of associated Handbook”._ 

## **CHARACTERISTICS** 

Tj = 25 °C unless otherwise specified. 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|ICBO|collector cut-off current|IE= 0; VCB= 60 V|−|10|nA|
|||IE= 0; VCB= 60 V; Tamb= 125°C|−|10|µA|
|IEBO|emitter cut-off current|IC= 0; VEB= 5 V|−|10|nA|
|hFE|DC current gain|IC= 0.1 mA; VCE= 10 V|35|−||
|||IC= 1 mA; VCE= 10 V|50|−||
|||IC= 10 mA; VCE= 10 V|75|−||
|||IC= 10 mA; VCE= 10 V;<br>Tamb=−55°C|35|−||
|||IC= 150 mA; VCE= 1 V; note 1|50|−||
|||IC= 150 mA; VCE= 10 V; note 1|100|300||
|||IC= 500 mA; VCE= 10 V; note 1|40|−||
|VCEsat|collector-emitter saturation voltage|IC= 150 mA; IB= 15 mA|−|300|mV|
|||IC= 500 mA; IB= 50 mA|−|1|V|
|VBEsat|base-emitter saturation voltage|IC= 150 mA; IB= 15 mA|0.6|1.2|V|
|||IC= 500 mA; IB= 50 mA|−|2|V|
|Cc|collector capacitance|IE= ie= 0; VCB= 10 V; f = 1 MHz|−|8|pF|
|Ce|emitter capacitance|IC= ic= 0; VEB= 500 mV; f = 1 MHz|−|25|pF|
|fT|transition frequency|IC= 20 mA; VCE= 20 V; f = 100 MHz|300|−|MHz|
|**Switching times (between 10% and 90% levels);**(see Fig.2)||||||
|ton|turn-on time|ICon= 150 mA; IBon= 15 mA;<br>IBoff=−15 mA; Tamb= 25°C|−|35|ns|
|td|delaytime||−|10|ns|
|tr|rise time||−|25|ns|
|toff|turn-off time||−|250|ns|
|ts|storage time||−|200|ns|
|tf|fall time||−|60|ns|



## **Note** 

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

1999 Apr 14 

3 

NXP Semiconductors 

Product data sheet 

## NPN switching transistor 

## PZT2222A 

**==> picture [497 x 306] intentionally omitted <==**

**----- Start of picture text -----**<br>
handbook, full pagewidth VBB VCC<br>RB RC<br>(probe) Vo (probe)<br>oscilloscope oscilloscope<br>450  Ω 450  Ω<br>R2<br>Vi DUT<br>R1<br>MLB826<br>Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.<br>R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.<br>VBB = −3.5 V; VCC = 29.5 V.<br>Oscilloscope input impedance Zi = 50 Ω.<br>Fig.2  Test circuit for switching times.<br>**----- End of picture text -----**<br>


1999 Apr 14 

4 

NXP Semiconductors 

Product data sheet 

## NPN switching transistor 

## PZT2222A 

## **PACKAGE OUTLINE** 

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Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223<br>**----- End of picture text -----**<br>


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D B E A X<br>c<br>y<br>HE v M A<br>b1<br>4<br>Q<br>A<br>A1<br>1 2 3 Lp<br>e1 bp w M B detail X<br>e<br>0 2 4 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y<br>1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95<br>mm 4.6 2.3 0.2 0.1 0.1<br>1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  EIAJ PROJECTION<br>97-02-28<br> SOT223 SC-73<br>99-09-13<br>**----- End of picture text -----**<br>


1999 Apr 14 

5 

NXP Semiconductors 

Product data sheet 

## NPN switching transistor 

## PZT2222A 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**|
|Objective data sheet|Development|This document contains data from the objective specification for product<br>development.|
|Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.|
|Product data sheet|Production|This document contains theproduct specification.|



## **Notes** 

1. Please consult the most recently issued document before initiating or completing a design. 

2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

## **DISCLAIMERS** 

**General** ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 

**Right to make changes** ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

**Suitability for use** ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

⎯ **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Terms and conditions of sale** ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 

**No offer to sell or license** ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

⎯ **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 

**Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 

1999 Apr 14 

6 

## _**NXP Semiconductors**_ 

## **Customer notification** 

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. 

## **Contact information** 

For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com** 

## © NXP B.V. 2009 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

Printed in The Netherlands 

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Date of release: 1999 Apr 14 

115002/00/03/pp7 

Document order number: 9397 750 05636 



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