# Fast / Ultrafast Diode, 200 V, 2 A, Single, 1.05 V, 28 ns, 28 A

![Product image](https://novapart.co/image/farnell:3772992/)

**URL**: https://novapart.co/products/PU2DM/fast-ultrafast-diode-200-v-2-a-single-105-28-ns
**SKU**: PU2DM
**Manufacturer**: TAIWAN SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.0900
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 2 Pin |
| Product Range | PU2xM Series |
| Qualification | - |
| Diode Case Style | MicroSMA |
| Diode Configuration | Single |
| Forward Voltage Max | 1.05V |
| Forward Surge Current | 28A |
| Reverse Recovery Time | 28ns |
| Average Forward Current | 2A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3772992/)

**PU2BM – PU2DM** TAIWANSEMICONDUCTORepee Taiwan Semiconductor 

## **2A, 100V - 200V Ultra Fast Surface Mount Rectifier** 

## FEATURES 

- Planar technology 

- Ideal for automated placement 

- Low reverse leakage 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- DC to DC converter 

- Switching mode converters and inverters 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|2|A|
|VRRM|100 - 200|V|
|IFSM|28|A|
|TJ MAX|175|°C|
|Package|Micro SMA||



**==> picture [130 x 33] intentionally omitted <==**

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(Pd) ROHS HALOGEN<br>— —sCOMPLIANT FREE<br>**----- End of picture text -----**<br>


- Freewheeling application 

## MECHANICAL DATA 

- Case: Micro SMA 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

- Weight: 0.006g (approximately) 

**==> picture [53 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Micro SMA<br>**----- End of picture text -----**<br>


## Cathode —_\q— Anode 

## ABSOLUTE MAXIMUM RATINGS 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER||SYMBOL|PU2BM|PU2DM|UNIT|
|Marking code on the device|||P7|P8||
|Repetitive peak reverse voltage||VRRM|100|200|V|
|Reverse voltage, total rms value||VR(RMS)|70|140|V|
|Forward current||IF|2||A|
|Surge peak forward current, single half<br>sine-wave superimposed on rated load|t = 8.3ms|IFSM|28||A|
||t = 1.0ms||52||A|
|Junction temperature||TJ|-55 to +175||°C|
|Storage temperature||TSTG|-55 to +175||°C|



1 Version: B2103 

## SEMICONDUCTOR$$ **PU2BM – PU2DM** Taiwan Semiconductor $5 Eteeee§ 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-lead thermal resistance|RӨJL|28|°C/W|
|Junction-to-ambient thermal resistance|RӨJA|60|°C/W|
|Junction-to-case thermal resistance|RӨJC|34|°C/W|



**Thermal Performance Note:** Units mounted on PCB (5mm x 5mm Cu pad test board) 

|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|
|PARAMETER<br>~~Ge~~|CONDITIONS<br>~~Ge~~<br>~~|~~|SYMBOL<br>~~Ge~~<br>~~|~~|TYP<br>~~Ge~~<br>~~||~~|MAX<br>~~Ge~~|UNIT<br>~~Ge~~|
|Forward voltage(1)<br>~~oo~~<br>~~oo~~|IF= 1A, TJ= 25°C<br>~~|~~<br>~~oo~~|VF<br>~~|~~<br>~~)~~<br>~~)~~<br>~~|~~|0.90<br>~~||~~<br>~~)~~|-<br>|V<br>|
||IF= 2A, TJ= 25°C<br>~~|~~<br>~~oo~~<br>~~oo~~||0.99<br>~~| |~~<br>~~)|~~<br>~~)~~|1.05<br>~~|~~<br>|V<br>~~|~~<br>|
||IF= 1A, TJ= 125°C<br>~~oo~~<br>~~oo~~<br>~~a~~||0.76<br>~~)|~~<br>~~)|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~|V<br>~~|~~<br>~~|~~|
||IF= 2A, TJ= 125°C<br>~~oo~~<br>~~a~~||0.84<br>~~|~~<br>~~)|~~<br>~~|~~<br>~~|~~|0.90<br>~~|~~<br>~~|~~|V<br>~~|~~<br>~~|~~|
|Reverse current @ rated VR<br>(2)<br>~~pf~~|TJ= 25°C<br>~~a~~<br>~~pf~~<br>~~eee~~|IR<br>~~|~~<br>~~eee~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~||~~|1|µA|
||TJ= 125°C<br>~~pf~~<br>~~eee~~||-<br>~~||~~|15|µA|
|Reverse recovery time<br>~~eS~~<br>~~a~~<br>~~a~~|IF= 0.5A, IR= 1.0A, Irr= 0.25A<br>~~eee~~<br>~~eS~~<br>~~eee~~|trr<br>~~eee~~<br>~~|~~<br>~~eS~~<br>~~e~~<br>~~|~~<br>~~**e**e~~|-<br>~~| |~~<br>~~eS~~<br>~~||~~|25<br>~~eS~~|ns<br>~~eS~~|
||IF= 1.0A, di/dt = 50 A/µs, VR= 30V<br>~~eS~~<br>~~eee~~||36<br>~~eS~~<br>~~||~~<br>~~e~~|-<br>~~eS~~<br>~~ee~~|ns<br>~~eS~~<br>~~ee~~|
|Reverse recovery current<br>~~a~~<br>~~a~~<br>~~a~~|IF= 2.0A, di/dt = 200 A/µs,<br>VR= 100V<br>~~eee~~|IRM<br>~~e~~<br>~~|~~<br>~~**e**e~~|3.8<br>~~| |~~<br>~~e~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|Reverse recovery charge<br>~~a~~<br>~~a~~||Qrr<br>~~**e**e~~<br>~~ee~~|57<br>~~e~~<br>~~e~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~e~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~e~~<br>~~ee~~<br>~~ee~~|
|Reverse recovery time<br>~~a~~||trr<br>~~ee~~|28<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|
|Junction capacitance<br>~~a~~<br>~~Ge~~|1MHz, VR= 4.0V<br>~~Ge~~|CJ<br>~~ee~~<br>~~Ge~~|18<br>~~ee~~<br>~~ee~~<br>~~Ge~~|-<br>~~ee~~<br>~~ee~~<br>~~Ge~~|pF<br>~~ee~~<br>~~ee~~<br>~~Ge~~|



1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING CODE(1)|PACKAGE|PACKING|
|---|---|---|
|PU2xM|Micro SMA|12,000 / Tape & reel|



**Notes:** 

1. “x” defines voltage from 100V(PU2BM) to 200V(PU2DM) 

2 Version: B2103 

**PU2BM – PU2DM** TAIWANSEMICONDUCTOR[lee 

## Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

## (TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

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2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>25 50 75 100 125 150 175<br>LEAD TEMPERATURE (°C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


**==> picture [228 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>po<br>PoE [TT]<br>ee el<br>10 lll<br>poNT<br>PoE [TT] TTT NY<br>f=1.0MHz<br>Vsig=50mVp-p<br>1<br>1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Fig.3 Typical Reverse Characteristics** 

**Fig.4 Typical Forward Characteristics** 

**==> picture [485 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10<br>TJ=175 ° C<br>1 —————— TJ=175 ° C a O G<br>SSS SSS TJ=125 ° C f 7a AeeAe<br>0.1 ° °<br>TJ=125 C TJ=25 C<br>See——————| eee 1 pLfff ff / |<br>poof syfF Ff<br>0.01 | FFA AY A) A<br>°<br>————————————— Ff TJ=-55 C<br>===—====— |} __|f f if ff a<br>0.001 ee TP ff<br>ee TJ=25 ° C / Pulse width 300μs 1% duty cycle<br>0.0001 __ 0.1 7 / aah<br>SSF SSE SELL|<br>10 20 30 40 50 60 70 80 90 100 0.4 0.6 0.8 1 1.2 1.4 1.6<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)<br>INSTANTANEOUS REVERSE CURRENT (μA)  INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


**Fig.5 Typical Transient Thermal Impedance** 

**==> picture [389 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>a<br>10 CT Cer CTT<br>EE a af<br>1 2<br>61 a a|<br>0.1 7A<br>IT TT TET TTPPPE<br>0.01 PLA TUIIE TTTIIE TCTIIE TETIIE TETTIIE TETNIE TTI TT ET<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>PULSE DURATION (s)<br>TRANSIENT THERMAL IMPEDANCE (°C/W)<br>**----- End of picture text -----**<br>


3 Version: B2103 

**PU2BM – PU2DM** 

## GMI QVDDOOT AR ST] SAAN puctoR! 

## Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**Micro SMA** 

## SUGGESTED PAD LAYOUT 

## MARKING DIAGRAM 

P/N = Marking Code YW = Data Code 

4 Version: B2103 

**PU2BM – PU2DM** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

5 Version: B2103 



## Links

- [View this product on Novapart](https://novapart.co/products/PU2DM/fast-ultrafast-diode-200-v-2-a-single-105-28-ns)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/taiwan-semiconductor/pu2dm-m3g/rectifier-200v-2a-microsma/dp/3772992)
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