PTVS6-058C-TH

**Applications** 

## **Features** 

■ 6 kA, 8/20 µs surge capability 

■ High power DC bus protection 

■ Low clamping voltage under surge 

■  Bidirectional TVS 

■ Excellent performance over temperature 

## POURNS ~~ii~~ **PTVS6-xxxC-TH Series High Current TVS Diodes** 

## ~~**General Information**~~ 

The Model PTVS6-xxxC-TH Series high current bidirectional TVS diodes are designed for use in high power DC bus clamping applications. These devices offer bidirectional port protection and are available with standoff voltage ratings of 58 V and 76 V. 

The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current surge requirements. 

## ~~**Absolute Maximum Ratings (@ T**~~ **A** ~~**= 25 °C Unless Otherwise Noted)**~~ 

|**Rating**|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|---|
|Repetitive Standoff Voltage|PTVS6-058C-TH<br>PTVS6-076C-TH|VWM|58<br>76|V|
|Peak Current Rating per 8/20 μs IEC 61000-4-5||IPPM|6|kA|
|Operating Junction Temperature Range||TJ|-55 to +125|°C|
|Storage Temperature Range||TS|-55 to +150|°C|
|Lead Temperature, Soldering (10 s)|||260|°C|



## ~~**Electrical Characteristics (@ T**~~ **A** ~~**= 25 °C Unless Otherwise Noted)**~~ 

|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|IDStandby Current|VD= VWM||||10|μA|
|V(BR)Breakdown Voltage|IBR= 10 mA|PTVS6-058C-TH<br>PTVS6-076C-TH|64<br>85|66<br>92|70<br>95|V|
|VCClamping Voltage(1)per IEC61000-4-5<br>(8/20 μs current waveform)|IPP= 6 kA|PTVS6-058C-TH<br>PTVS6-076C-TH|||110<br>140|V|
|V(BR) Temperature Coeffi cient||||0.1||%/°C|
|C         Capacitance|F = 10 kHz,<br>Vd= 1 Vrms|PTVS6-058C-TH<br>PTVS6-076C-TH||4.5<br>3.3||nF|



(1) VC measured at the time which is coincident with the peak surge current. 

**Asia-Pacifi c:** Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 **EMEA:** Tel: +36 88 520 390 • Fax: +36 88 520 211 **The Americas:** Tel: +1-951 781-5500 • Fax: +1-951 781-5700 **www.bourns.com** 

*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifi cations are subject to change without notice. 

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. 

## **PTVS6-xxxC-TH Series High Current TVS Diodes** 

## ~~**Performance Graphs**~~ 

~~**V-I Characteristic**~~ 

## ~~**Percentage V**~~ **BR** ~~**Change vs. Junction Temperature**~~ 

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12<br>10<br>8<br>Normalized to 25 °C<br>6<br>4<br>2<br>0<br>-2<br>-4<br>-6<br>-8<br>-10<br>-12<br>-40 -20 0 20 40 -60 -80 100 120 140<br>Junction Temperature (°C)<br> Change vs. Temperature (%)<br>BR<br>V<br>**----- End of picture text -----**<br>


## ~~**Typical Surge Current Derating**~~ 

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120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175<br>Ambient Temperature (°C)<br>Percent of Rated Value<br>**----- End of picture text -----**<br>


_This graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 µs current waveform per the IEC 61000-4-5 specifi cation. This device is not intended for continuous operation at temperatures above 125 °C._ 

Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. 

## **PTVS6-xxxC-TH Series High Current TVS Diodes** 

## ~~**Product Dimensions**~~ 

Epoxy encapsulation materials conform to UL 94V-0. Silver plated lead fi nish conforms to the solderability requirements of JESD22-B102, Pb free solder. Package dimensions are shown below: 

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G F<br>D<br>C<br>H<br>B E MM<br>DIMENSIONS:<br>A (INCHES)<br>**----- End of picture text -----**<br>


|**Dim.**|**PTVS6-058C-TH**|**PTVS6-058C-TH**|**PTVS6-058C-TH**|**PTVS6-076C-TH**|
|---|---|---|---|---|
|A|||24.15 ± 0.72<br>(0.951 ± 0.028)||
|B|||<br>2.40 ± 0.50<br>(0.094 ± 0.020)||
|C|||<br>1.75± 1.25<br>(0.069 ± 0.049)<br>||
|D|||12.00<br>(0.472)Max.||
|E|||1.25 ± 0.05<br>(0.049 ± 0.002)||
|F|||<br>11.50<br>(0.453)Max.||
|G||5.00<br>(0.197)Max.||6.00<br>(0.236)Max.|
|H|||6.00 ± 1.00<br>(0.236 ± 0.039)||



## ~~**Typical Part Marking**~~ 

PTVS6-058C-TH .......................................................................6058 PTVS6-076C-TH .......................................................................6076 

## ~~**How to Order**~~ 

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PTVS  6  -  076  C  -  T  H<br>**----- End of picture text -----**<br>


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Series<br>PTVS = Power TVS High Current Diode<br>Peak Current Rating<br>          6 =  6 kA<br>Repetitive Standoff Voltage<br>058 =  58 V<br>076 =  76 V<br>Suffi x<br>C =  Bidirectional Device<br>Package<br>T = Through-Hole<br>Temperature<br>H = High Temperature Series<br>**----- End of picture text -----**<br>


REV. 11/15 

Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications.