# Bipolar (BJT) Single Transistor, PNP, 60 V, 800 mA, 625 mW, TO-92, Through Hole ![Product image](https://novapart.co/image/farnell:2454067/) **URL**: https://novapart.co/products/PN2907ABU/bipolar-bjt-single-transistor-pnp-60-v-800-ma-625 **SKU**: PN2907ABU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0490 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:625mW; DC Collector Current:-800mA; DC Current Gain hFE:50hFE; T ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 625mW | | Transistor Mounting | Through Hole | | Transistor Polarity | PNP | | Transition Frequency | 200MHz | | Transistor Case Style | TO-92 | | Dc Current Gain Hfe Min | 50hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 800mA | | Collector Emitter Voltage Max | 60V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2454067/) ## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. # **PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor** ## **Features** - High DC Current Gain (hFE) Range: 100 ~ 300 - High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) - Maximum Turn-On Time (ton): 45 ns - Maximum Turn-Off Time (toff): 100 ns - Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) ## **Description** The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalpurpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively. ## **Applications** - General-Purpose Amplifier - Switch **==> picture [85 x 96] intentionally omitted <==** **----- Start of picture text -----**
PN2907A
TO-92
EBC
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MMBT2907A
C
E
SOT-23 B
Mark:2F
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PZT2907A
C
E
C
SOT-223 B
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## **Ordering Information** |**Part Number**|**Top Mark**|**Package**|**Packing Method**| |---|---|---|---| |PN2907ABU|2907A|TO-92 3L|Bulk| |PN2907ATF|2907A|TO-92 3L|Tape and Reel| |PN2907ATFR|2907A|TO-92 3L|Tape and Reel| |PN2907ATA|2907A|TO-92 3L|Ammo| |PN2907ATAR|2907A|TO-92 3L|Ammo| |MMBT2907A|2F|SOT-23 3L|Tape and Reel| |MMBT2907A-D87Z|2F|SOT-23 3L|Tape and Reel| |PZT2907A|2907A|SOT-223 4L|Tape and Reel| Publication Order Number: © 1998 Semiconductor Components Industries, LLC. October-2017, Rev. 2 PZT2907A/D ## **Absolute Maximum Ratings**[(1),(2)] Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. |**Smbl**|**Prmtr**|**Vl**|**Unit**| |---|---|---|---| |**yo**|**aaee**|**aue**|| |VCEO|Collector-Emitter Voltage|-60|V| |VCBO|Collector-Base Voltage|-60|V| |VEBO|Emitter-Base Voltage|-5.0|V| |IC|Collector Current - Continuous|-800|mA| |TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to +150|°C| ## **Notes:** 1. These ratings are based on a maximum junction temperature of 150 ° C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. ## **Thermal Characteristics** Values are at TA = 25°C unless otherwise noted. |Values are at|TA= 25°C unless otherwise noted.||||| |---|---|---|---|---|---| |**Symbol**|**Parameter**|**Max.**|||**Unit**| |||**PN2907A**(4)|**MMBT2907A**(3)|**PZT2907A**(4)|| |PD|Total Device Dissipation|625|350|1000|mW| ||Derate Above 25°C|5.0|2.8|8.0|mW/°C| |RθJC|Thermal Resistance, Junction to Case|83.3|||°C/W| |RθJA|Thermal Resistance, Junction to Ambient|200|357|125|°C/W| ## **Notes:** 3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 4. PCB size: FR-4 76 x 114 x 1.57 mm[3] (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2 ## **Electrical Characteristics** Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**| |---|---|---|---|---|---| |**Off Characteristics**|||||| |V(BR)CEO|Collector-Emitter Breakdown Voltage(5)|IC= -10 mA, IB= 0|-60||V| ||||||| |V(BR)CBO|Collector-Base Breakdown Voltage|IC= -10μA, IE= 0|-60||V| |V(BR)EBO|Emitter-Base Breakdown Voltage|IE= -10μA, IC= 0|-5.0||V| |IBL|Base Cut-Off Current|VCE= -30 V, VEB= -0.5 V||-50|nA| |ICEX|Collector Cut-Off Current|VCE= -30 V, VEB= -0.5 V||-50|nA| |ICBO|Collector Cut-Off Current|VCB= -50 V, IE= 0||-0.02|μA| |||VCB= -50 V, IE= 0, TA= 150°C||-20|| |**On Characteristics**|||||| |hFE|DC Current Gain|IC= -0.1 mA, VCE= -10 V|75||| |||IC= -1.0 mA, VCE= -10 V|100||| |||IC= -10 mA, VCE= -10 V|100||| |||IC= -150 mA, VCE= -10 V(5)|100|300|| |||IC= -500 mA, VCE= -10 V(5)|50||| |VCE(sat)|Collector-Emitter Saturation Voltage(5)|IC= -150 mA, IB= -15 mA||-0.4|V| |||IC= -500 mA, IB= -50 mA||-1.6|| |VBE(sat)|Base-Emitter Saturation Voltage|IC= -150 mA, IB= -15 mA(5)||-1.3|V| |||IC= -500 mA, IB= -50 mA||-2.6|| |**Small Signal Characteristics**|||||| |fT|Current Gain - Bandwidth Product|IC= -50 mA, VCE= -20 V,
f = 100 MHz|200||MHz| |Cob|Output Capacitance|VCB= -10 V, IE= 0,
f = 100 kHz||8.0|pF| |Cib|Input Capacitance|VEB= -2.0 V, IC= 0, f = 100 kHz||30|pF| |**Switching Characteristics**|||||| |ton|Turn-On Time|VCC= -30 V, IC= -150 mA,
IB1= -15 mA||45|ns| |td|Delay Time|||10|ns| |tr|Rise Time|||40|ns| |toff|Turn-Off Time|VCC= -6.0 V, IC= -150 mA,
IB1= IB2= -15mA||100|ns| |ts|Storage Time|||80|ns| |tf|Fall Time|||30|ns| ## **Notes:** 5. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. www.onsemi.com 3 **==> picture [523 x 686] intentionally omitted <==** **----- Start of picture text -----**
Typical Performance Characteristics
500 0.5
V = 5V CE β = 10
400 125 °C 0.4
300 0.3
25 °C
200 25 °C 0.2
100 - 40 °C 0.1 125 °C - 40 °C
0 0
0.1 0.3 1 3 10 30 100 300 1 10 100 500
I - COLLECTOR CURRENT (mA)C I - COLLECTOR CURRENT (mA)C
Figure 1. Typical Pulsed Current Gain vs. Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current Collector Current
1
1
- 40 °C 0.8 - 40 °C
0.8
25 °C 0.6
0.6 25 °C
0.4 125 °C 0.4 125 °C
β = 10
0.2 0.2 V = 5VCE
0 0
1 10 100 500 0.1 1 10 25
I - COLLECTOR CURRENT (mA)C I - COLLECTOR CURRENT (mA)C
Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base-Emitter On Voltage vs.
Collector Current Collector Current
100 20
V = 35VCB
16
10
12
1 C ib
8
0.1 4 C ob
0.01 0
25 50 75 100 125 0.1 1 10 50
T - AMBIENT TEMPERATURE ( C)A ° REVERSE BIAS VOLTAGE (V)
Figure 5. Collector Cut-Off Current vs. Figure 6. Input and Output Capacitance vs.
Ambient Temperature Reverse Bias Voltage
BESAT
CESAT
BE(ON)
CBO
FE
h - TYPICAL PULSED CURRENT GAIN
V - COLLECTOR EMITTER VOLTAGE (V)
BASE EMITTER ON VOLTAGE (V)
V - BASE EMITTER VOLTAGE (V)
V -
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
CAPACITANCE (pF)
I - COLLECTOR CURRENT (nA)
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www.onsemi.com 4 ## **Typical Performance Characteristics** (Continued) **==> picture [431 x 326] intentionally omitted <==** **----- Start of picture text -----**
250 500
I = I = B1 B2 10I c I = I = B1 B2 10I c
200 400
V cc = 15 V V cc = 15 V
150 t s 300
100 200
t r t f t off
50 100
t d t on
0 0
10 100 1000 10 100 1000
I - COLLECTOR CURRENT (mA)C I - COLLECTOR CURRENT (mA)C
Figure 7. Switching Times vs. Collector Current Figure 8. Turn-On and Turn-Off Times vs.
Collector Current
50 1
20 0.75 TO-92 SOT-223
10 t r = 15 V
0.5
5 SOT-23
30 ns
0.25
2
60 ns
1 0
10 100 500 0 25 50 75 100 125 150
I - COLLECTOR CURRENT (mA)C TEMPERATURE ( C)o
D
B1
TIME (nS) TIME (nS)
P - POWER DISSIPATION (W)
I - TURN 0N BASE CURRENT (mA)
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**Figure 7. Switching Times vs. Collector Current** **Figure 10. Power Dissipation vs. Ambient Temperature** **Figure 9. Rise Time vs. Collector and Turn-On Base Currents** www.onsemi.com 5 ## **Typical Performance Characteristics** (f = 1.0 kHz) **==> picture [434 x 155] intentionally omitted <==** **----- Start of picture text -----**
5 1.3
h oe h re
h ie
2 h re 1.2 h and hre oe h fe
hoe
h fe
1 1.1
0.5 h ie 1
h ie
0.2 V = -10 V T = 25 CCE A o 0.9 h fe T = 25 CI = -10mA C A o
0.1 0.8
_ 1 _ 2 _ 5 _ 10 _ 20 _ 50 -4 -8 -12 -16 -20
I - COLLECTOR CURRENT (mA)C V - COLLECTOR VOLTAGE (V)CE
CE
C
CHAR. RELATIVE TO VALUES AT I = -10mA CHAR. RELATIVE TO VALUES AT V = -10V
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**Figure 11. Common Emitter Characteristics** **Figure 12. Common Emitter Characteristics** **==> picture [199 x 151] intentionally omitted <==** **----- Start of picture text -----**
1.5
I = -10mAC h fe
1.4 V = -10 VCE h ie
1.3 h re
1.2 h oe
1.1 hoe
1
0.9 h re
0.8
h ie
0.7
0.6 h fe
0.5
-40 -20 0 20 40 60 80 100
T - AMBIENT TEMPERATURE ( C)A o
A
CHAR. RELATIVE TO VALUES AT T = 25 C
o
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**Figure 13. Common Emitter Characteristics** www.onsemi.com 6 ## **Physical Dimensions** **==> picture [104 x 18] intentionally omitted <==** **----- Start of picture text -----**
TO-92 (Bulk)
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D
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## **Figure 14. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) (ACTIVE)** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ www.onsemi.com 7 ## **Physical Dimensions** (Continued) ## TO-92 (Tape and Reel, Ammo) **Figure 15. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) (ACTIVE)** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ www.onsemi.com 8 **==> picture [398 x 490] intentionally omitted <==** **----- Start of picture text -----**
Physical Dimensions (Continued)
SOT-23
0.95
2.92±0.20
3
1.40
1.30 [+0.20] 2.20
-0.15
1 2
(0.29) 0.60
0.37
0.95
0.20 A B 1.00
1.90 1.90
LAND PATTERN
RECOMMENDATION
1.20 MAX SEE DETAIL A
(0.93) 0.10
0.00
0.10 C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS.
0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS,
0.25 MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10
(0.55) PLANE
SCALE: 2X
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## **Figure 16. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ www.onsemi.com 9 ## **Physical Dimensions** (Continued) **==> picture [73 x 14] intentionally omitted <==** **----- Start of picture text -----**
SOT-223
**----- End of picture text -----**
**==> picture [68 x 14] intentionally omitted <==** **==> picture [249 x 174] intentionally omitted <==** **==> picture [152 x 120] intentionally omitted <==** ## **Figure 17. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE)** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ www.onsemi.com 10 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor **N. 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