# Bipolar (BJT) Single Transistor, NPN, 160 V, 300 mA, 200 mW, SC-70, Surface Mount
**URL**: https://novapart.co/products/PMST5551,115/bipolar-bjt-single-transistor-npn-160-v-300-ma-200
**SKU**: PMST5551,115
**Manufacturer**: NEXPERIA
**Price**: €0.0620
**Stock**: 500+
**Lead Time**: 64 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 300MHz |
| Transistor Case Style | SC-70 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 300mA |
| Collector Emitter Voltage Max | 160V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3440070RL/)
## **Important notice**
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com**
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved
Should be replaced with:
- **© Nexperia B.V. (year). All rights reserved** .
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding,
Kind regards,
Team Nexperia
## _**DISCRETE SEMICONDUCTORS**_
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DATA SHEET
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book, halfpage
M3D187
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## **PMST5550; PMST5551** NPN high-voltage transistors
Product data sheet Supersedes data of 1997 May 20
1999 Apr 29
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**NXP Semiconductors**
**Product data sheet**
**PMST5550; PMST5551**
## **NPN high-voltage transistors**
## **FEATURES**
- Low current (max. 300 mA)
- High voltage (max. 160 V).
## **APPLICATIONS**
- Switching and amplification in high voltage applications such as telephony.
## **DESCRIPTION**
NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401.
## **MARKING**
|**MARKING**||
|---|---|
|**TYPE NUMBER**|**MARKING CODE**(1)|
|PMST5550|∗1F|
|PMST5551|∗G3|
## **Note**
1. ∗ = - : Made in Hong Kong.
- ∗ = t : Made in Malaysia.
## **PINNING**
|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|base|
|2|emitter|
|3|collector|
**==> picture [242 x 200] intentionally omitted <==**
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handbook, halfpage 3
3
1
2
1 2
Top view MAM062
Fig.1 Simplified outline (SOT323) and symbol.
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## **LIMITING VALUES**
In accordance with the Absolute Maximum Rating System (IEC 134).
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage
PMST5550
PMST5551|open emitter|−
−|160
180|V
V|
|VCEO|collector-emitter voltage
PMST5550
PMST5551|open base|−
−|140
160|V
V|
|VEBO|emitter-base voltage|open collector|−|6|V|
|IC|collector current(DC)||−|300|mA|
|ICM|peak collector current||−|600|mA|
|IBM|peak base current||−|100|mA|
|Ptot|totalpower dissipation|Tamb ≤25°C; note 1|−|200|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operatingambient temperature||−65|+150|°C|
## **Note**
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 29
2
NXP Semiconductors
Product data sheet
## NPN high-voltage transistors
## PMST5550; PMST5551
## **THERMAL CHARACTERISTICS**
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rthj-a|thermal resistance fromjunction to ambient|note 1|625|K/W|
## **Note**
1. Transistor mounted on an FR4 printed-circuit board.
## **CHARACTERISTICS**
Tamb = 25 °C unless otherwise specified.
|Tamb= 25°C|unless otherwise specified.|||||
|---|---|---|---|---|---|
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|ICBO|collector cut-off current
PMST5550|IE= 0; VCB= 100 V|−|100|nA|
|||IE= 0; VCB= 100 V; Tamb= 100°C|−|100|µA|
||collector cut-off current
PMST5551|IE= 0; VCB= 120 V|−|50|nA|
|||IE= 0; VCB= 120 V; Tamb= 100°C|−|50|µA|
|IEBO|emitter cut-off current|IC= 0; VEB= 4 V|−|50|nA|
|hFE|DC current gain
PMST5550|VCE= 5 V; (see Fig.2)
IC= 1 mA
IC= 10 mA
IC= 50 mA; note 1|60
60
20|−
250
−||
||DC current gain
PMST5551|VCE= 5 V; (see Fig.2)
IC= 1 mA
IC= 10 mA
IC= 50 mA; note 1|80
80
30|−
250
−||
|VCEsat|collector-emitter saturation
voltage|IC= 10 mA; IB= 1 mA|−|150|mV|
||collector-emitter saturation
voltage
PMST5550
PMST5551|IC= 50 mA; IB= 5 mA; note 1|−
−|250
200|mV
mV|
|VBEsat|base-emitter saturation voltage|IC= 10 mA; IB= 1 mA|−|1|V|
||base-emitter saturation voltage
PMST5550
PMST5551|IC= 50 mA; IB= 5 mA; note 1|−
−|1.2
1|V
V|
|Cc|collector capacitance|IE= ie= 0; VCB= 10 V; f = 1 MHz|−|6|pF|
|Ce|emitter capacitance|IC= ic= 0; VEB= 0.5 V; f = 1 MHz|−|30|pF|
|fT|transition frequency|IC= 10 mA; VCE= 10 V; f = 100 MHz|100|300|MHz|
|F|noise figure
PMST5551|IC= 200µA; VCE= 5 V; RS= 2 kΩ;
f = 10 Hz to 15.7 kHz|−|8|dB|
## **Note**
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 29
3
NXP Semiconductors
Product data sheet
## NPN high-voltage transistors
## PMST5550; PMST5551
**==> picture [497 x 306] intentionally omitted <==**
**----- Start of picture text -----**
MGD814
160
handbook, full pagewidth
hFE
120
VCE = 5 V
80
40
0
10 [−] [1] 1 10 10 [2] 10 [3]
IC mA
Fig.2 DC current gain; typical values.
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1999 Apr 29
4
NXP Semiconductors
Product data sheet
## NPN high-voltage transistors
## PMST5550; PMST5551
## **PACKAGE OUTLINE**
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Plastic surface mounted package; 3 leads SOT323
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D B E A
X
y HE v M A
3
Q
A
A1
c
1 2
e1 bp w M B Lp
e detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A maxA1 bp c D E e e1 HE Lp Q v w
1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23
mm 0.1 1.3 0.65 0.2 0.2
0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
SOT323 SC-70 97-02-28
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1999 Apr 29
5
**NXP Semiconductors**
**Product data sheet**
## **NPN high-voltage transistors**
## **PMST5550; PMST5551**
## **DATA SHEET STATUS**
|**DATA SHEET STATUS**|||
|---|---|---|
|**DOCUMENT**
**STATUS**(1)|**PRODUCT**
**STATUS**(2)|**DEFINITION**|
|Objective data sheet|Development|This document contains data from the objective specification for product
development.|
|Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.|
|Product data sheet|Production|This document contains theproduct specification.|
## **Notes**
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
## **DISCLAIMERS**
**General** ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
**Right to make changes** ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
**Suitability for use** ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
⎯ **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
**Terms and conditions of sale** ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
**No offer to sell or license** ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
⎯ **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
**Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions
1999 Apr 29
6
## _**NXP Semiconductors**_
## **Customer notification**
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
## **Contact information**
For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com**
## © NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
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Date of release: 1999 Apr 29
115002/00/04/pp7
Document order number: 9397 750 05907
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---
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