# Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A, 80 W, TO-220AB, Through Hole
**URL**: https://novapart.co/products/PHE13009/DG,127/bipolar-bjt-single-transistor-npn-400-v-12-a-80-w
**SKU**: PHE13009/DG,127
**Manufacturer**: WEEN SEMICONDUCTORS
**Price**: €0.2950
**Stock**: 100+
**Lead Time**: 190 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:80W; DC Collector Current:12A; DC Current Gain hFE:40hFE; Transistor
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 80W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-220AB |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 12A |
| Collector Emitter Voltage Max | 400V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2075012/)
**10 December 2015**
**==> picture [49 x 66] intentionally omitted <==**
## **IMPORTANT NOTICE**
## **1. Global joint venture starts operations as WeEn Semiconductors**
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), **WeEn Semiconductors** , which will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown below.
**WWW** - For www.nxp.com use www.ween-semi.com **Email** - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “[©] **NXP Semiconductors N.V.** _**{year}**_ **. All rights reserved** ” becomes “[©] **WeEn Semiconductors Co., Ltd.** _**{year}**_ **. All rights reserved** ”
If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
**==> picture [52 x 41] intentionally omitted <==**
**Philips Semiconductors**
**Preliminary specification**
**Silicon Diffused Power Transistor**
**PHE13009**
## **GENERAL DESCRIPTION**
The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
## **QUICK REFERENCE DATA**
||**SYMBOL**||**PARAMETER**|**PARAMETER**|**PARAMETER**||**CONDITIONS**|**CONDITIONS**|**CONDITIONS**|||**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
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**MAX.**
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**MAX.**
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**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||VCESM||Collector-emitter voltage peak value||||VBE= 0 V||||||-|||700|||||V|||||
||VCBO||Collector-Base voltage (open emitter)||||||||||-|||700|||||V|||||
||VCEO||Collector-emitter voltage (open base)||||||||||-|||400|||||V|||||
||IC||Collector current (DC)||||||||||-||||12||||A|||||
||ICM||Collector current peak value||||||||||-||||24||||A|||||
||Ptot||Total power dissipation||||Tmb ≤25 ˚C||||||-||||80||||W|||||
||VCEsat||Collector-emitter saturation voltage||||IC= 5.0 A;IB= 1.0 A||||||0.32|||1.0|||||V|||||
||hFEsat||||||IC= 5.0 A;||VCE= 5 V||||-||||40|||||||||
||tf||Fall time||||IC= 5.0 A;||IB1= 1.0 A||||0.1|||0.5|||||µs|||||
## **PINNING - TO220AB**
## **PIN CONFIGURATION**
## **SYMBOL**
||**PIN**|**DESCRIPTION**|**DESCRIPTION**|**DESCRIPTION**||
|---|---|---|---|---|---|
||1|base||||
||2|collector||||
||3|emitter||||
||tab|collector||||
**==> picture [276 x 108] intentionally omitted <==**
**----- Start of picture text -----**
tab c
b
1 2 3 e
**----- End of picture text -----**
**==> picture [86 x 106] intentionally omitted <==**
## **LIMITING VALUES**
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
|||**SYMBOL**|**PARAMETER**||**CONDITIONS**|**CONDITIONS**|**CONDITIONS**|||**MIN.**
**MAX.**
**UNIT**|**MIN.**
**MAX.**
**UNIT**|**MIN.**
**MAX.**
**UNIT**|**MIN.**
**MAX.**
**UNIT**|**MIN.**
**MAX.**
**UNIT**|**MIN.**
**MAX.**
**UNIT**|**MIN.**
**MAX.**
**UNIT**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||VCESM|Collector to emitter voltage||VBE= 0 V||||||-||700|||V|||||
|||VCEO|Collector to emitter voltage (open base)||||||||-||400|||V|||||
|||VCBO|Collector to base voltage (open emitter)||||||||-||700|||V|||||
|||IC|Collector current (DC)||||||||-||12|||A|||||
|||ICM|Collector current peak value||||||||-||24|||A|||||
|||IB|Base current (DC)||||||||-||6|||A|||||
|||IBM|Base current peak value||||||||-||12|||A|||||
|||Ptot|Total power dissipation||Tmb ≤25 ˚C||||||-||80|||W|||||
|||Tstg
Tj|Storage temperature
Junction temperature||||||||-65
-||150
150|||˚C
˚C|||||
## **THERMAL RESISTANCES**
||**SYMBOL**
**PARAMETER**
**CONDITIONS**
**TYP.**
**MAX.**
**UNIT**
Rthj-mb
Junction to mountingbase
-
1.56
K/W
Rthj-a
Junction to ambient
in free air
60
-
K/W|
|---|---|
March 1999
Rev 1.000
1
Philips Semiconductors
Preliminary specification
## Silicon Diffused Power Transistor
PHE13009
## **STATIC CHARACTERISTICS**
Tmb = 25 ˚C unless otherwise specified
||**SYMBOL**|**PARAMETER**|**PARAMETER**|**PARAMETER**|||**CONDITIONS**|**CONDITIONS**||||**MIN.**|**MIN.**|**MIN.**|**TYP.**|**TYP.**|**TYP.**||**MAX.**|**MAX.**|**MAX.**|**UNIT**|**UNIT**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||ICES,ICBO|Collector cut-off|||current1||VBE= 0 V; VCE=||VCESMmax||||-|||-||||1.0|||mA|||||
||ICES||||||VBE= 0 V; VCE=||VCESMmax;||||-|||-||||5.0|||mA|||||
||||||||Tj= 125 ˚C|||||||||||||||||||||
||ICEO|Collector cut-off|||current||VCEO= VCEOMmax(400V)||||||-|||-||||0.1|||mA|||||
||IEBO|Emitter cut-off current|||||VEB= 9 V; IC= 0||A||||-|||-||||1|||mA|||||
||VCEOsust|Collector-emitter sustaining voltage|||||IB= 0 A; IC= 10 mA;||||||400|||-||||-|||V|||||
||||||||L = 25 mH|||||||||||||||||||||
||VCEsat|Collector-emitter saturation voltage|||||IC= 5.0 A;IB=|1.0 A|||||-|||0.32||||1.0|||V|||||
||||||||IC= 8.0 A;IB=|1.6 A|||||-|||-||||2.0|||V|||||
||VBEsat|Base-emitter saturation voltage|||||IC= 5.0 A;IB=|1.0 A|||||-|||1.0||||1.3|||V|||||
||||||||IC= 8.0 A;IB=|1.6 A|||||-|||1.1||||1.6|||V|||||
||hFE|DC current gain|||||IC= 5.0 A; VCE=||5 V||||8|||-||||40||||||||
||hFEsat||||||IC= 8.0 A; VCE=||5 V||||6|||-||||30||||||||
## **DYNAMIC CHARACTERISTICS**
Tmb = 25 ˚C unless otherwise specified
||**SYMBOL**|**SYMBOL**|**PARAMETER**|**PARAMETER**|**PARAMETER**||**CONDITIONS**|**CONDITIONS**|**CONDITIONS**||**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|**TYP.**
**MAX.**
**UNIT**|||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||Switching times (resistive load)||||ICon= 5 A; IBon= -IBoff= 1 A;||||||||||||||||||
||||||||RL=||75 ohms; VBB2= 4 V;||||||||||||||||
||ts||Turn-off storage time|||||||||2.2||||3.3||||µs|||||
||tf||Turn-off fall time|||||||||0.26||||0.7||||µs|||||
||||Switching times (inductive load)||||ICon= 5 A; IBon= 1 A; LB= 1µH;||||||||||||||||||
||||||||-VBB||= 5 V||||||||||||||||
||ts||Turn-off storage time|||||||||1.35||||2.3||||µs|||||
||tf||Turn-off fall time|||||||||0.1||||0.5||||µs|||||
||||Switching times (inductive load)||||ICon= 5A; IBon= 1 A; LB= 1µH;||||||||||||||||||
||ts||Turn-off storage time||||-VBB||= 5 V; Tj= 100 ˚C||||-|||3.2||||µs|||||
||tf||Turn-off fall time||||||||||-|||0.9||||µs|||||
> **1** Measured with half sine-wave voltage (curve tracer).
March 1999
Rev 1.000
2
Philips Semiconductors
Preliminary specification
## Silicon Diffused Power Transistor
## PHE13009
**==> picture [461 x 153] intentionally omitted <==**
**----- Start of picture text -----**
ICon
90 % 90 %
+ 50v
100-200R
IC
10 %
ts
Horizontal ton tf
toff
Oscilloscope
IBon
IB
Vertical
10 %
300R 1R tr 30ns
6V
30-60 Hz
-IBoff
**----- End of picture text -----**
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms with resistive load.
**==> picture [697 x 187] intentionally omitted <==**
**----- Start of picture text -----**
IC / mA VCC
LC
250
IBon
LB
100
T.U.T.
10 -VBB
0
VCE / V min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
**----- End of picture text -----**
**==> picture [460 x 152] intentionally omitted <==**
**----- Start of picture text -----**
VCC ICon
90 %
IC
R
L
VIM RB 10 %
0 T.U.T. ts tf t
toff
tp
IB IBon
T
t
-IBoff
**----- End of picture text -----**
Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
March 1999
Rev 1.000
3
Philips Semiconductors
Preliminary specification
## Silicon Diffused Power Transistor
## PHE13009
**==> picture [697 x 187] intentionally omitted <==**
**----- Start of picture text -----**
PD% Normalised Power Derating 1.4VBEsat VOLTAGE/V
120
110 1.3
100 1.2
90
80 1.1 IC/IB = 3
70 1
60 0.9
50
40 0.8
30 0.7
20 0.6
10
0 0.5
0 20 40 60 80 100 120 140 0.4
Tmb / C 0.5 0.8 IC, COLLECTOR CURRENT/A3 5 7 9 12
Fig.7. Normalised power dissipation. Fig.10. Base-Emitter saturation voltage.
PD% = 100⋅PD/PD 25˚C = f (Tmb) Solid lines = typ values, VBEsat = f(IC); at IC/IB =5.
**----- End of picture text -----**
**==> picture [697 x 187] intentionally omitted <==**
**----- Start of picture text -----**
HFE VCEsat VOLTAGE/V
50 1.75
30 1.5
20 5V
1.25
15
1V
10 1
IC/IB = 3
5 0.75
0.5
2
0.25
0
0.01 0.05 0.1 0.5 1 2 3 5 12 0.5 0.8 3 5 7 9 12
IC/A IC, COLLECTOR CURRENT/A
Fig.8. Typical DC current gain. hFE = f(IC) Fig.11. Collector-Emitter saturation voltage.
parameter VCE Solid lines = typ values, VCEsat = f(IC); at IC/IB =5.
**----- End of picture text -----**
**==> picture [697 x 187] intentionally omitted <==**
**----- Start of picture text -----**
VCEsat/V
2 Zth / (K/W)
10
1.8
1.6
1.4 1
1.2 D=0.5
1 0.2
0.1
0.80.6 0.1 0.050.020 PD tp D = Ttp
0.4 t
0.2 4A T
0 1A 3A2A 0.011E-06 1E-04 1E-02 1E+00
0.01 0.1 IB/A 1 10 t / s
Fig.9. Collector-Emitter saturation voltage. Fig.12. Transient thermal impedance.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C. Zth j-mb = f(t); parameter D = tp/T
**----- End of picture text -----**
March 1999
Rev 1.000
4
Philips Semiconductors
Preliminary specification
## Silicon Diffused Power Transistor
## PHE13009
**==> picture [764 x 259] intentionally omitted <==**
**----- Start of picture text -----**
IC/A
14 VCC
12
10
LC
8
VCL(RBSOAR)
6 PROBE POINT
-5V IBon LB
4 -3V
T.U.T.
2 -1V -VBB
0
0 100 200 300 400 500 600 700 800 900
VCEclamp/V
Fig.13. Reverse bias safe operating area (Tj < Tjmax) Fig.14. Test circuit for reverse bias safe operating
for -Vbe = 5V,3V and 1V. area.
Vclamp < 700V; Vcc = 150V; -Vbe = 5V,3V & 1V;
LB = 1µH; LC = 200µH
**----- End of picture text -----**
March 1999
Rev 1.000
5
Philips Semiconductors
Preliminary specification
## Silicon Diffused Power Transistor
## PHE13009
## **MECHANICAL DATA**
**==> picture [1017 x 508] intentionally omitted <==**
**----- Start of picture text -----**
Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.15. TO220AB; pin 2 connected to mounting base.
**----- End of picture text -----**
**Notes**
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
March 1999
Rev 1.000
6
Philips Semiconductors
Preliminary specification
## Silicon Diffused Power Transistor
## PHE13009
## **DEFINITIONS**
**Data sheet status** Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
## **Limiting values**
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
## **Application information**
Where application information is given, it is advisory and does not form part of the specification.
## **Philips Electronics N.V. 1999**
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
## **LIFE SUPPORT APPLICATIONS**
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1999
Rev 1.000
7
## Links
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- [Supplier page](https://es.farnell.com/ween-semiconductors/phe13009-dg-127/transistor-npn-12a-400v-to220ab/dp/2075012)
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