# Bipolar (BJT) Single Transistor, PNP, 100 V, 1 A, 290 mW, TSSOP, Surface Mount
**URL**: https://novapart.co/products/PBSS9110Y,115/bipolar-bjt-single-transistor-pnp-100-v-1-a-290-mw
**SKU**: PBSS9110Y,115
**Manufacturer**: NEXPERIA
**Price**: β¬0.1220
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2024) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 290mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 100MHz |
| Transistor Case Style | TSSOP |
| Dc Current Gain Hfe Min | 125hFE |
| Operating Temperature Max | 150Β°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 100V |
## Datasheet
π [Download PDF](https://novapart.co/datasheet/farnell:3439936RL/)
**==> picture [47 x 52] intentionally omitted <==**
## **PBSS9110Y**
## **100 V, 1 A PNP low VCEsat (BISS) transistor**
**Rev. 02 β 22 November 2009**
## **Product data sheet**
## **1. Product profile**
## **1.1 General description**
PNP low VCEsat transistor in a SOT363 (SC-88) plastic package.
## **1.2 Features**
- SOT363 package
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to less heat generation
## **1.3 Applications**
- Major application segments:
- Automotive 42 V power
- Telecom infrastructure
- Industrial
- Peripheral driver:
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver (e.g. relays, buzzers and motors)
- DC-to-DC converter
## **1.4 Quick reference data**
**Table 1. Quick reference data**
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VCEO|collector-emitter voltage||-|-|β100|V|
|IC|collector current (DC)||-|-|β1|A|
|ICM|peak collector current||-|-|β3|A|
|RCEsat|equivalent on-resistance||-|-|320|mΞ©|
**==> picture [81 x 42] intentionally omitted <==**
**PBSS9110Y**
**NXP Semiconductors**
**100 V, 1 A PNP low VCEsat (BISS) transistor**
## **2. Pinning information**
## **Table 2. Discrete pinning**
|**Pin**
**Description**
**Simplified outline**
**Symbol**|**Pin**
**Description**
**Simplified outline**
**Symbol**|
|---|---|
|1, 2, 5, 6
collector
3
base
4
emitter|1
3
2
4
5
6
4
3
1, 2, 5, 6
_sym030_|
## **3. Ordering information**
## **Table 3. Ordering information**
|**Type number**|**Package**|**Package**|**Package**|
|---|---|---|---|
||**Name**|**Description**|**Version**|
|PBSS9110Y|-
plastic surface mounted package; 6 leads
SOT363|||
## **4. Marking**
|**Table 4.**
**Marking**||
|---|---|
|**Type number**|**Marking code**|
|PBSS9110Y|91*[1]|
- [1] * = p: made in Hong Kong
- = t: made in Malaysia
- = W: made in China
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2
**Product data sheet**
**Rev. 02 β 22 November 2009**
**2 of 13**
**PBSS9110Y**
**NXP Semiconductors**
**100 V, 1 A PNP low VCEsat (BISS) transistor**
## **5. Limiting values**
**Table 5. Limiting values**
_In accordance with the Absolute Maximum Rating System (IEC 60134)._
|**Symbol**
**Parameter**
**Conditions**|**Min**
**Max**
**Unit**|
|---|---|
|VCBO
collector-base voltage
open emitter|-
β120
V|
|VCEO
collector-emitter voltage
open base|-
β100
V|
|VEBO
emitter-base voltage
open collector|-
β5
V|
|ICM
peak collector current
Tj(max)|-
β3
A|
|IC
collector current (DC)|-
β1
A|
|IB
base current (DC)|-
β0.3
A|
|Ptot
total power dissipation
Tambβ€25Β°C|[1]
-
290
mW|
||[2]
480
mW|
||[3]
625
mW|
|Tj
junction temperature|-
150
Β°C|
|Tamb
operating ambient
temperature|β65
+150
Β°C|
|Tstg
storage temperature|β65
+150
Β°C|
- [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
- [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm[2] collector mounting pad.
- [3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm[2] collector mounting pad.
**==> picture [308 x 239] intentionally omitted <==**
**----- Start of picture text -----**
001aaa796
600
Ptot
(mW)
(1)
400
(2)
200
0
0 40 80 120 160
Tamb (Β°C)
(1) 1cm [2] collector mounting pad
(2) Standard footprint
Fig 1. Power derating curves
**----- End of picture text -----**
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2 **Product data sheet**
**Rev. 02 β 22 November 2009**
**3 of 13**
**PBSS9110Y**
**NXP Semiconductors**
**100 V, 1 A PNP low VCEsat (BISS) transistor**
## **6. Thermal characteristics**
## **Table 6. Thermal characteristics**
|**Symbol**
**Parameter**
**Conditions**|**Typ**
**Unit**|
|---|---|
|Rth(j-a)
thermal resistance from junction to ambient in free air|[1]
431
K/W
[2]
260
K/W
[3]
200
K/W|
|Rth(j-s)
thermal resistance from junction to
soldering
in free air|[1]
85
K/W|
- [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint
- [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm[2] collector mounting pad.
- [3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm[2] collector mounting pad.
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**
001aaa798
10 [3]
Zth (1)
(K/W) (2)
(3)
10 [2] (4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10 [β][1]
10 [β][5] 10 [β][4] 10 [β][3] 10 [β][2] 10 [β][1] 1 10 10 [2] 10 [3]
tp (s)
**----- End of picture text -----**
Mounted on FR4 PCB; standard footprint
- (1) Ξ΄ = 1
- (2) Ξ΄ = 0.75
- (3) Ξ΄ = 0.5
- (4) Ξ΄ = 0.33
- (5) Ξ΄ = 0.2
- (6) Ξ΄ = 0.1
- (7) Ξ΄ = 0.05
- (8) Ξ΄ = 0.02
- (9) Ξ΄ = 0.01
(10) Ξ΄ = 0 **Fig 2. Transient thermal impedance as a function of pulse time; typical values**
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2
**Product data sheet**
**Rev. 02 β 22 November 2009**
**4 of 13**
**PBSS9110Y**
**NXP Semiconductors**
## **100 V, 1 A PNP low VCEsat (BISS) transistor**
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**
001aaa797
10 [3]
Zth
(K/W) (1)
(2)
10 [2] (3)
(4)
(5)
(6)
10 (7)
(8)
(9)
1
(10)
10 [β][1]
10 [β][5] 10 [β][4] 10 [β][3] 10 [β][2] 10 [β][1] 1 10 10 [2] 10 [3]
tp (s)
**----- End of picture text -----**
Mounted on FR4 PCB; mounting pad for collector = 1cm[2]
- (1) Ξ΄ = 1
- (2) Ξ΄ = 0.75
- (3) Ξ΄ = 0.5
- (4) Ξ΄ = 0.33
- (5) Ξ΄ = 0.2
- (6) Ξ΄ = 0.1
- (7) Ξ΄ = 0.05
- (8) Ξ΄ = 0.02
- (9) Ξ΄ = 0.01
(10) Ξ΄ = 0
**Fig 3. Transient thermal impedance as a function of pulse time; typical values**
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2
**Product data sheet**
**Rev. 02 β 22 November 2009**
**5 of 13**
**PBSS9110Y**
**NXP Semiconductors**
## **100 V, 1 A PNP low VCEsat (BISS) transistor**
## **7. Characteristics**
|**Table 7.**
**Characteristics**
_Tamb = 25_Β°_C unless otherwise specified._|**Table 7.**
**Characteristics**
_Tamb = 25_Β°_C unless otherwise specified._|
|---|---|
|**Symbol**
**Parameter**|**Conditions**
**Min**
**Typ**
**Max**
**Unit**|
|ICBO
collector-base cut-off
current|VCB=β80 V; IE= 0 A
-
-
β100
nA|
||VCB=β80 V; IE= 0 A;
Tj= 150Β°C
-
-
β50
ΞΌA|
|ICES
collector-emitter
cut-off current|VCE=β80 V; VBE= 0 V
-
-
β100
nA|
|IEBO
emitter-base cut-off
current|VEB=β4 V; IC= 0 A
-
-
β100
nA|
|hFE
DC current gain|VCE=β5 V; IC=β1 mA
150
-
-|
||VCE=β5 V; IC=β250 mA
150
-
-|
||VCE=β5 V; IC=β0.5 A
[1]
150
-
450|
||VCE=β5 V; IC=β1 A
[1]
125
-
-|
|VCEsat
collector-emitter
saturation voltage|IC=β250 mA; IB=β25 mA
-
-
β120
mV|
||IC=β500 mA; IB=β50 mA
-
-
β180
mV|
||IC=β1 A; IB=β100 mA
-
-
β320
mV|
|RCEsat
equivalent
on-resistance|IC=β1 A; IB=β100 mA
[1]
-
170
320
mΞ©|
|VBEsat
base-emitter
saturation voltage|IC=β1 A; IB=β100 mA
-
-
β1.1
V|
|VBEon
base-emitter turn-on
voltage|IC=β1 A; VCE=β5 V
-
-
β1.0
V|
|fT
transition frequency|IC=β50 mA; VCE=β10 V;
f = 100 MHz
100
-
-
MHz|
|Cc
collector capacitance|IE= Ie= 0 A; VCB=β10 V;
f = 1 MHz
-
-
17
pF|
[1] Pulse test: tp β€ 300 ΞΌs; Ξ΄ β€ 0.02.
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2
**Product data sheet**
**Rev. 02 β 22 November 2009**
**6 of 13**
**PBSS9110Y**
**NXP Semiconductors**
## **100 V, 1 A PNP low VCEsat (BISS) transistor**
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**
001aaa376
600
hFE (1)
400
(2)
200 (3)
0
β10 [β][1] β1 β10 β10 [2] β10 [3] β10 [4]
IC (mA)
**----- End of picture text -----**
VCE = β10 V
- (1) Tamb = 100 Β°C
- (2) Tamb = 25 Β°C (3) Tamb = β55 Β°C
**Fig 4. DC current gain as a function of collector current; typical values**
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**
001aaa378
β1
VCEsat
(V)
β10 [β][1]
(1)
(2)
(3)
β10 [β][2]
β10 [β][1] β1 β10 β10 [2] β10 [3] β10 [4]
IC (mA)
**----- End of picture text -----**
IC/IB = 10
- (1) Tamb = 100 Β°C
- (2) Tamb = 25 Β°C (3) Tamb = β55 Β°C
- **Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values**
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**
001aaa377
β1.2
VBE
(V)
β0.8 (1)
(2)
(3)
β0.4
0
β10 [β][1] β1 β10 β10 [2] β10 [3] β10 [4]
IC (mA)
**----- End of picture text -----**
VCE = β10 V
- (1) Tamb = β55 Β°C
- (2) Tamb = 25 Β°C
- (3) Tamb = 100 Β°C
**Fig 5. Base-emitter voltage as a function of collector current; typical values**
**==> picture [233 x 235] intentionally omitted <==**
**----- Start of picture text -----**
001aaa380
β1
VCEsat
(V)
β10 [β][1]
(1)
(2)
β10 [β][2]
β10 [β][1] β1 β10 β10 [2] β10 [3] β10 [4]
IC (mA)
Tamb = 25 Β°C
(1) IC/IB = 50
(2) IC/IB = 20
**----- End of picture text -----**
**Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values**
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2
**Product data sheet**
**Rev. 02 β 22 November 2009**
**7 of 13**
**PBSS9110Y**
**NXP Semiconductors**
## **100 V, 1 A PNP low VCEsat (BISS) transistor**
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**
001aaa381
β10
VBEsat
(V)
β1
(1)
(2)
(3)
β10 [β][1]
β10 [β][1] β1 β10 β10 [2] β10 [3] β10 [4]
IC (mA)
**----- End of picture text -----**
IC/IB = 10
- (1) Tamb = β55 Β°C
**==> picture [233 x 222] intentionally omitted <==**
**----- Start of picture text -----**
001aaa379
β10
VBEsat
(V)
β1
β10 [β][1]
β10 [β][1] β1 β10 β10 [2] β10 [3] β10 [4]
IC (mA)
IC/IB = 20
Tamb = 25 Β°C
**----- End of picture text -----**
- (2) Tamb = 25 Β°C
(3) Tamb = 100 Β°C **Fig 8. Base-emitter saturation voltage as a function Fig 9. Base-emitter saturation voltage as a function of collector current; typical values of collector current; typical values**
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**
001aaa382
10 [3]
RCEsat
(Ξ©)
10 [2]
10
(1)
(2)
(3)
1
10 [β][1]
β10 [β][1] β1 β10 β10 [2] β10 [3] β10 [4]
IC (mA)
**----- End of picture text -----**
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**
001aaa383
10 [3]
RCEsat
(Ξ©)
10 [2]
10
(1)
1
(2)
10 [β][1]
β10 [β][1] β1 β10 β10 [2] β10 [3] β10 [4]
IC (mA)
**----- End of picture text -----**
IC/IB = 10
- (1) Tamb = β55 Β°C
- (2) Tamb = 25 Β°C (3) Tamb = 100 Β°C
- **Fig 10. Equivalent on-resistance as a function of collector current; typical values**
Tamb = 25 Β°C
- (1) IC/IB = 50
- (2) IC/IB = 20
**Fig 11. Equivalent on-resistance as a function of collector current; typical values**
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2
**Product data sheet**
**Rev. 02 β 22 November 2009**
**8 of 13**
**PBSS9110Y**
**NXP Semiconductors**
## **100 V, 1 A PNP low VCEsat (BISS) transistor**
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**
001aaa384
β2
IB (mA) = β45
IC β40.5
(A) β36
β1.6 β31.5
β27
β1.2
β0.8 β22.5
β18
β13.5
β9
β0.4 β4.5
0
0 β1 β2 β3 β4 β5
VCE (V)
**----- End of picture text -----**
**Fig 12. Collector current as a function of collector-emitter voltage; typical values**
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2
**Product data sheet**
**Rev. 02 β 22 November 2009**
**9 of 13**
**PBSS9110Y**
**NXP Semiconductors**
**100 V, 1 A PNP low VCEsat (BISS) transistor**
## **8. Package outline**
## **Plastic surface-mounted package; 6 leads**
## **SOT363**
**==> picture [478 x 570] intentionally omitted <==**
**----- Start of picture text -----**
D B E A X
y HE v M A
6 5 4
Q
pin 1
index A
A1
1 2 3 c
e1 bp w M B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A max bp c D E e e1 HE Lp Q v w y
1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25
mm 0.1 1.3 0.65 0.2 0.2 0.1
0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
04-11-08
SOT363 SC-88
06-03-16
**----- End of picture text -----**
**Fig 13. Package outline**
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2
**Product data sheet**
**Rev. 02 β 22 November 2009**
**10 of 13**
**PBSS9110Y**
**NXP Semiconductors**
## **100 V, 1 A PNP low VCEsat (BISS) transistor**
## **9. Revision history**
**Table 8.**
|**Table 8.**|**Revision**|**history**||||||
|---|---|---|---|---|---|---|---|
|**Document**|**ID**|**Release date**
**Data sheet status**
**Change notice**
**Supersedes**||||||
|PBSS9110Y_2||20091122
Product data
-
PBSS9110Y_1||||||
|Modifications:||**β’**|This data sheet was changed to reflect the new company name NXP Semiconductors,|||||
||||including new legal definitions and disclaimers. No changes were made to the technical|||||
||||content.|||||
|||**β’**|Table 2β
Discrete pinning
β
:amended|||||
|||**β’**|Figure 10β
Equivalent on-resistance as a function of collector current; typical values
β
:updated|||||
|||**β’**|Figure 11β
Equivalent on-resistance as a function of collector current; typical values
β
:updated|||||
|||**β’**|Figure 12β
Collector current as a function of collector-emitter voltage; typical values
β
:updated|||||
|||**β’**|Figure 13β
Package outline
β
:updated|||||
|||||||||
|PBSS9110Y_1||20040609
Product data
-
-||||||
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2 **Product data sheet**
**Rev. 02 β 22 November 2009**
**11 of 13**
**PBSS9110Y**
**NXP Semiconductors**
**100 V, 1 A PNP low VCEsat (BISS) transistor**
## **10. Legal information**
## **10.1 Data sheet status**
|**Document statu**~~**s**~~**[1]**
**[2]**|**Product status[3]**|**Definition**|
|---|---|---|
|Objective [short] data sheet|Development|This document contains data from the objective specification for product development.|
|Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.|
|Product [short] data sheet|Production|This document contains the product specification.|
- [1] Please consult the most recently issued document before initiating or completing a design.
[2] The term βshort data sheetβ is explained in section βDefinitionsβ.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
## **10.2 Definitions**
**Draft β** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Short data sheet β** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
## **10.3 Disclaimers**
**General β** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
**Right to make changes β** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
**Suitability for use β** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customerβs own risk.
**Applications β** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
**Limiting values β** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
**Terms and conditions of sale β** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
**No offer to sell or license β** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
**Export control β** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
**Quick reference data β** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
## **10.4 Trademarks**
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
## **11. Contact information**
For more information, please visit: **http://www.nxp.com**
For sales office addresses, please send an email to: **salesaddresses@nxp.com**
Β© NXP B.V. 2009. All rights reserved.
PBSS9110Y_2
**Product data sheet**
**Rev. 02 β 22 November 2009**
**12 of 13**
**PBSS9110Y**
**NXP Semiconductors**
**100 V, 1 A PNP low VCEsat (BISS) transistor**
## **12. Contents**
|**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**|
|---|---|
|1.1|General description . . . . . . . . . . . . . . . . . . . . . 1|
|1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**|
|**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**|
|**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**|
|**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 4**|
|**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6**|
|**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**9**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**10**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 12**|
|10.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12|
|10.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|10.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|10.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|**11**|**Contact information. . . . . . . . . . . . . . . . . . . . . 12**|
|**12**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section βLegal informationβ.
**==> picture [84 x 52] intentionally omitted <==**
**Β© NXP B.V. 2009.**
**All rights reserved.**
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
**Date of release: 22 November 2009 Document identifier: PBSS9110Y_2**
## Links
- [View this product on Novapart](https://novapart.co/products/PBSS9110Y,115/bipolar-bjt-single-transistor-pnp-100-v-1-a-290-mw)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/nexperia/pbss9110y-115/bipolar-trans-pnp-100v-1a-tssop/dp/3439936RL)
---
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