# Bipolar (BJT) Single Transistor, PNP, 60 V, 900 mA, 270 mW, TO-236AB, Surface Mount

![Product image](https://novapart.co/image/farnell:3439923RL/)

**URL**: https://novapart.co/products/PBSS5160TVL/bipolar-bjt-single-transistor-pnp-60-v-900-ma-270
**SKU**: PBSS5160TVL
**Manufacturer**: NEXPERIA
**Price**: €0.0760
**Stock**: 1000+
**Lead Time**: 373 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 270mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 220MHz |
| Transistor Case Style | TO-236AB |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 900mA |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3439923RL/)

## **PBSS5160T** 

## **60 V, 1 A PNP low VCEsat (BISS) transistor** 

**Rev. 04 — 15 January 2010** 

## **Product data sheet** 

## **1. Product profile** 

## **1.1 General description** 

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 

NPN complement: PBSS4160T. 

## **1.2 Features** 

Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency due to less heat generation Reduces Printed-Circuit Board (PCB) area required 

Cost-effective replacement for medium power transistors BCP52 and BCX52 

## **1.3 Applications** 

Major application segments: 

Automotive 

Telecom infrastructure 

Industrial 

Power management: 

DC-to-DC conversion 

Supply line switching 

Peripheral driver: 

Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load drivers (e.g. relays, buzzers and motors) 

## **1.4 Quick reference data** 

**Table 1. Quick reference data** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|VCEO|collector-emitter voltage|open base||-|-|−60|V|
|IC|collector current|||-|-|−1|A|
|ICM|peak collector current|t = 1 ms or limited||-|-|−2|A|
|||by Tj(max)||||||
|RCEsat|collector-emitter|IC=−1 A;|[1]|-|220|330|mΩ|
||saturation resistance|IB=−100 mA||||||



[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 

**PBSS5160T** 

**Nexperia** 

**60 V, 1 A PNP low VCEsat (BISS) transistor** 

## **2. Pinning information** 

**Table 2. Pinning** 

|**Pin**|**Description**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Graphic**|**symbol**|**symbol**|
|---|---|---|---|---|---|---|---|
|1|base|||||||
|2|emitter||3||||3|
|3|collector||||1|||
|||1<br>2||||||
||||||||2|
||||||_006aab259_|||



## **3. Ordering information** 

**Table 3. Ordering information** 

|**Type number**|**Package**|**Package**|**Package**|
|---|---|---|---|
||**Name**|**Description**|**Version**|
|PBSS5160T|-<br>plastic surface-mounted package; 3 leads<br>SOT23|||



## **4. Marking** 

**Table 4. Marking codes** 

**Type number Marking code[[][1][]]** PBSS5160T *U6 

- [1] * = -: made in Hong Kong 

   - = p: made in Hong Kong 

   - = t: made in Malaysia 

   - = W: made in China 

## **5. Limiting values** 

**Table 5. Limiting values** 

_In accordance with the Absolute Maximum Rating System (IEC 60134)._ 

|**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Max**<br>**Unit**|
|---|---|
|VCBO<br>collector-base voltage<br>open emitter|-<br>−80<br>V|
|VCEO<br>collector-emitter<br>voltage<br>open base|-<br>−60<br>V|
|VEBO<br>emitter-base voltage<br>open collector|-<br>−5<br>V|
|IC<br>collector current|[1]<br>-<br>−0.9<br>A|
||[2]<br>-<br>−1<br>A|
|ICM<br>peak collector current<br>t = 1 ms or limited<br>by Tj(max)|-<br>−2<br>A|
|IB<br>base current|-<br>−300<br>mA|
|IBM<br>peak base current<br>tp≤300μs;δ ≤0.02|-<br>−1<br>A|



PBSS5160T_4 **Product data sheet** 

**Rev. 04 — 15 January 2010** 

**2 of 11** 

© Nexperia B.V. 2017. All rights reserved 

**PBSS5160T** 

**Nexperia** 

**60 V, 1 A PNP low VCEsat (BISS) transistor** 

## **Table 5. Limiting values** _…continued_ 

_In accordance with the Absolute Maximum Rating System (IEC 60134)._ 

|**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Max**<br>**Unit**|
|---|---|
|Ptot<br>total power dissipation Tamb≤25°C|[1]<br>-<br>270<br>mW|
||[2]<br>-<br>400<br>mW|
||[1]<br>[3]<br>-<br>1.25<br>W|
|Tj<br>junction temperature|-<br>150<br>°C|
|Tamb<br>ambient temperature|−65<br>+150<br>°C|
|Tstg<br>storage temperature|−65<br>+150<br>°C|



- [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 

- [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm[2] . 

- [3] Operated under pulse conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms. 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mle128<br>500<br>Ptot<br>(mW)<br>400<br>(1)<br>300<br>(2)<br>200<br>100<br>0<br>0 40 80 120 160<br>Tamb (°C)<br>**----- End of picture text -----**<br>


- (1) FR4 PCB, mounting pad for collector 1 cm[2] 

- (2) FR4 PCB, standard footprint 

## **Fig 1. Power derating curves** 

PBSS5160T_4 **Product data sheet** 

**Rev. 04 — 15 January 2010** 

**3 of 11** 

© Nexperia B.V. 2017. All rights reserved 

**PBSS5160T** 

**Nexperia** 

**60 V, 1 A PNP low VCEsat (BISS) transistor** 

## **6. Thermal characteristics** 

**Table 6. Thermal characteristics** 

|**Symbol**<br>**Parameter**<br>**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|Rth(j-a)<br>thermal resistance from<br>junction to ambient<br>in free air|[1]<br>-<br>-<br>465<br>K/W|
||[2]<br>-<br>-<br>312<br>K/W|
||[1]<br>[3]<br>-<br>-<br>100<br>K/W|



- [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 

- [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm[2] . [3] Operated under pulse conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms. 

**==> picture [361 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mle127<br>10 [3]<br>δ = 1<br>Zth<br>(K/W) 0.75<br>0.5<br>0.33<br>10 [2] 0.2<br>0.1<br>0.05<br>0.02<br>10<br>0.01<br>0<br>1<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br>


FR4 PCB, standard footprint 

**Fig 2. Transient thermal impedance as a function of pulse duration; typical values** 

PBSS5160T_4 **Product data sheet** 

**Rev. 04 — 15 January 2010** 

**4 of 11** 

© Nexperia B.V. 2017. All rights reserved 

**PBSS5160T** 

**Nexperia** 

**60 V, 1 A PNP low VCEsat (BISS) transistor** 

## **7. Characteristics** 

## **Table 7. Characteristics** 

_Tamb = 25_ ° _C unless otherwise specified._ 

|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|ICBO<br>collector-base cut-off<br>current|VCB=−60 V; IE= 0 A<br>-<br>-<br>−100<br>nA|
||VCB=−60 V; IE= 0 A;<br>Tj= 150°C<br>-<br>-<br>−50<br>μA|
|ICES<br>collector-emitter<br>cut-off current|VCE=−60 V; VBE= 0 V<br>-<br>-<br>−100<br>nA|
|IEBO<br>emitter-base cut-off<br>current|VEB=−5 V; IC= 0 A<br>-<br>-<br>−100<br>nA|
|hFE<br>DC current gain|VCE=−5 V|
||IC=−1 mA<br>200<br>350<br>-|
||IC=−500 mA<br>[1]<br>150<br>250<br>-|
||IC=−1 A<br>[1]<br>100<br>160<br>-|
|VCEsat<br>collector-emitter<br>saturation voltage|IC=−100 mA; IB=−1 mA<br>-<br>−110<br>−160<br>mV|
||IC=−500 mA;<br>IB=−50 mA<br>-<br>−120<br>−175<br>mV|
||IC=−1 A; IB=−100 mA<br>[1]<br>-<br>−220<br>−330<br>mV|
|RCEsat<br>collector-emitter<br>saturation resistance|IC=−1 A; IB=−100 mA<br>[1]<br>-<br>220<br>330<br>mΩ|
|VBEsat<br>base-emitter<br>saturation voltage|IC=−1 A; IB=−50 mA<br>-<br>−0.95<br>−1.1<br>V|
|VBEon<br>base-emitter<br>turn-on voltage|VCE=−5 V; IC=−1 A<br>-<br>−0.82<br>−0.9<br>V|
|fT<br>transition frequency|VCE=−10 V;<br>IC=−50 mA; f = 100 MHz<br>150<br>220<br>-<br>MHz|
|Cc<br>collector capacitance|VCB=−10 V; IE= ie= 0 A;<br>f = 1 MHz<br>-<br>9<br>15<br>pF|



[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 

PBSS5160T_4 **Product data sheet** 

**Rev. 04 — 15 January 2010** 

**5 of 11** 

© Nexperia B.V. 2017. All rights reserved 

**PBSS5160T** 

**Nexperia** 

## **60 V, 1 A PNP low VCEsat (BISS) transistor** 

**==> picture [497 x 501] intentionally omitted <==**

**----- Start of picture text -----**<br>
mle124 mle125<br>600 −2<br>IC IB (mA) = − 20 −24 −28 −32 −36 −40<br>hFE (A)<br>−1.6<br>(1)<br>−16<br>400<br>−12<br>−1.2<br>(2) −8<br>−0.8<br>−4<br>200<br>(3)<br>−0.4<br>0 0<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [4] 0 −1 −2 −3 −4 −5<br>IC (mA) VCE (V)<br>VCE = −5 V Tamb = 25 °C<br>(1) Tamb = 100 °C<br>(2) Tamb = 25 °C<br>(3) Tamb = −55 °C<br>Fig 3. DC current gain as a function of collector  Fig 4. Collector current as a function of<br>current; typical values collector-emitter voltage; typical values<br>−1.2 mle122 −1.2 mle123<br>VBEsat<br>VBE (V)<br>(V) −1<br>(1) (1)<br>−0.8<br>(2) −0.8 (2)<br>(3) (3)<br>−0.6<br>−0.4<br>−0.4<br>0 −0.2<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [4] −10 [−][1] −1 −10 −10 [2] −10 [3] −10 [4]<br>IC (mA) IC (mA)<br>VCE = −5 VCE = −5 V = −5 V −5 V5 V IC/IB = 20C/IB = 20/IB = 20B = 20 = 20<br>**----- End of picture text -----**<br>


VCE = −5 VCE = −5 V = −5 V −5 V5 V IC/IB = 20C/IB = 20/IB = 20B = 20 = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C **Fig 5. Base-emitter voltage as a function of collector Fig 6. Base-emitter saturation voltage as a function current; typical values of collector current; typical values** 

PBSS5160T_4 

**Product data sheet** 

**Rev. 04 — 15 January 2010** 

**6 of 11** 

© Nexperia B.V. 2017. All rights reserved 

**PBSS5160T** 

**Nexperia** 

## **60 V, 1 A PNP low VCEsat (BISS) transistor** 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mle126<br>−10<br>VCEsat<br>(V)<br>−1<br>−10 [−][1]<br>(2) (1)<br>(3)<br>−10 [−][2]<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br>


IC/IB = 20 

   - (1) Tamb = 100 °C 

   - (2) Tamb = 25 °C 

- (3) Tamb = −55 °C 

- **Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values** 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mle120<br>−10<br>VCEsat<br>(V)<br>−1<br>−10 [−][1] (1)<br>(2)<br>−10 [−][2]<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br>


- Tamb = 25 °C 

- (1) IC/IB = 100 (2) IC/IB = 50 

**Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values** 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mle119<br>−1<br>VCEsat<br>(V)<br>−10 [−][1]<br>(1)<br>(2)<br>−10 [−][2] (3)<br>−10 [−][3]<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br>


IC/IB = 10 

   - (1) Tamb = 100 °C 

   - (2) Tamb = 25 °C 

   - (3) Tamb = −55 °C 

- **Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values** 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mle121<br>10 [3]<br>RCEsat<br>(Ω)<br>10 [2]<br>10<br>1<br>(1)<br>(2)<br>(3)<br>10 [−][1]<br>−10 [−][1] −1 −10 −10 [2] −10 [3] −10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br>


IC/IB = 20 

- (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C 

**Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values** 

PBSS5160T_4 

**Product data sheet** 

**Rev. 04 — 15 January 2010** 

**7 of 11** 

© Nexperia B.V. 2017. All rights reserved 

**PBSS5160T** 

**Nexperia** 

**60 V, 1 A PNP low VCEsat (BISS) transistor** 

## **8. Package outline** 

**==> picture [237 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0 1.1<br>2.8 0.9<br>3<br>0.45<br>0.15<br>2.5 1.4<br>2.1 1.2<br>1 2<br>0.48 0.15<br>0.38 0.09<br>1.9<br>Dimensions in mm 04-11-04<br>**----- End of picture text -----**<br>


**Fig 11. Package outline SOT23 (TO-236AB)** 

## **9. Packing information** 

**Table 8. Packing methods** _The indicated -xxx are the last three digits of the 12NC ordering code.[[][1][]]_ 

|**Type number**<br>**Package**<br>**Description**|**Packing quantity**|**Packing quantity**|
|---|---|---|
||**3000**|**10000**|
|PBSS5160T<br>SOT23<br>4 mm pitch, 8 mm tape and reel|-215<br>-235||



[1] For further information and the availability of packing methods, see Section 12. 

PBSS5160T_4 **Product data sheet** 

**Rev. 04 — 15 January 2010** 

**8 of 11** 

© Nexperia B.V. 2017. All rights reserved 

**PBSS5160T** 

**Nexperia** 

**60 V, 1 A PNP low VCEsat (BISS) transistor** 

## **10. Revision history** 

**Table 9.** 

|**Table 9.**|**Revision**|**history**|||
|---|---|---|---|---|
|**Document**|**ID**|**Release date**<br>**Data sheet status**|**Change notice**|**Supersedes**|
|PBSS5160T_4||20100115<br>Product data sheet|-|PBSS5160T_N_3|
|Modifications:||**•** The format of this data sheet has been redesigned to comply||with the new identity|
|||guidelines of NXP Semiconductors.|||
|||**•** Legal texts have been adapted to the new|company name where appropriate.||
|||**•** Table 1“<br>Quick reference data<br>”<br>:amended|||
|||**•** Section 4“<br>Marking<br>”<br>:amended|||
|||**•** Figure 4<br>:updated|||
|||**•** Figure 11<br>:superseded by minimized package outline drawing|||
|||**•** Section 9“<br>Packing information<br>”<br>:added|||
|||**•** Section 11“<br>Legal information<br>”<br>:updated|||
||||||
|PBSS5160T_N_3||20080718<br>Product data sheet|-|PBSS5160T_2|
|PBSS5160T_2||20040527<br>Product specification|-|PBSS5160T_1|
|PBSS5160T_1||20030623<br>Product specification|-|-|



PBSS5160T_4 **Product data sheet** 

**Rev. 04 — 15 January 2010** 

**9 of 11** 

© Nexperia B.V. 2017. All rights reserved 

**PBSS5160T** 

**Nexperia** 

**60 V, 1 A PNP low VCEsat (BISS) transistor** 

## **11. Legal information** 

## **11.1 Data sheet status** 

|**Document statu**~~**s**~~**[1]**<br>**[2]**|**Product status[3]**|**Definition**|
|---|---|---|
|Objective [short] data sheet|Development|This document contains data from the objective specification for product development.|
|Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.|
|Product [short] data sheet|Production|This document contains the product specification.|



- [1] Please consult the most recently issued document before initiating or completing a design. 

[2] The term ‘short data sheet’ is explained in section “Definitions”. 

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 

## **11.2 Definitions** 

**Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any 

representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

**Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 

## **11.3 Disclaimers** 

**General —** Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 

**Right to make changes —** Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

**Suitability for use —** Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental 

damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

**Applications —** Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

**Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Terms and conditions of sale —** Nexperia products are sold 

subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 

**No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

**Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 

**Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

## **11.4 Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

## **12. Contact information** 

For more information, please visit: **http://www.nexperia.com** 

For sales office addresses, please send an email to: **salesaddresses@nexperia.com** 

PBSS5160T_4 **Product data sheet** 

**Rev. 04 — 15 January 2010** 

**10 of 11** 

© Nexperia B.V. 2017. All rights reserved 

**PBSS5160T** 

**Nexperia** 

**60 V, 1 A PNP low VCEsat (BISS) transistor** 

## **13. Contents** 

|**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .  1**|
|---|---|
|1.1|General description  . . . . . . . . . . . . . . . . . . . . .  1|
|1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1|
|1.3|Applications  . . . . . . . . . . . . . . . . . . . . . . . . . . .  1|
|1.4|Quick reference data  . . . . . . . . . . . . . . . . . . . .  1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . .  2**|
|**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . .  2**|
|**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  2**|
|**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  2**|
|**6**|**Thermal characteristics  . . . . . . . . . . . . . . . . . .  4**|
|**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  5**|
|**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  8**|
|**9**|**Packing information  . . . . . . . . . . . . . . . . . . . . .  8**|
|**10**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .  9**|
|**11**|**Legal information. . . . . . . . . . . . . . . . . . . . . . .  10**|
|11.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . .  10|
|11.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . .  10|
|11.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .  10|
|11.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .  10|
|**12**|**Contact information. . . . . . . . . . . . . . . . . . . . .  10**|
|**13**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  11**|



> © **Nexperia B.V. 2017. All rights reserved** 

For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com **Date of release: 15 January 2010** 



## Links

- [View this product on Novapart](https://novapart.co/products/PBSS5160TVL/bipolar-bjt-single-transistor-pnp-60-v-900-ma-270)
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- [Supplier page](https://es.farnell.com/nexperia/pbss5160tvl/bipolar-trans-pnp-60v-0-9a-to/dp/3439923RL)
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