# Bipolar (BJT) Single Transistor, NPN, 80 V, 4 A, 550 mW, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:8736359RL/)

**URL**: https://novapart.co/products/PBSS4480X,135/bipolar-bjt-single-transistor-npn-80-v-4-a-550-mw
**SKU**: PBSS4480X,135
**Manufacturer**: NEXPERIA
**Price**: €0.2290
**Stock**: 10+
**Lead Time**: 373 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:550mW; DC Collector Current:4A; DC Current Gain hFE:400hFE; Transistor Case S

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 550mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 150MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 400hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 80V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8736359RL/)

## **DISCRETE SEMICONDUCTORS** 

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DATA SHEET<br>ook, halfpage<br>M3D109<br>**----- End of picture text -----**<br>


**PBSS4480X** 80 V, 4 A NPN low V CEsat (BISS) transistor 

Supersedes data of 2004 Aug 5 

2004 Oct 25 

**Philips Semiconductors** 

**PBSS4480X** 

## **80 V, 4 A NPN low VCEsat (BISS) transistor** 

## **FEATURES** 

- High hFE and low VCEsat at high current operation 

- High collector current capability: IC maximum 4 A 

- High efficiency leading to less heat generation. 

## **APPLICATIONS** 

- Medium power peripheral drivers; e.g. fan, motor 

## **QUICK REFERENCE DATA** 

|**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**|
|---|---|---|---|
|VCEO|collector-emitter voltage|80|V|
|IC|collector current (DC)|4|A|
|ICM|peak collector current|10|A|
|RCEsat|equivalent<br>on-resistance|54|mΩ|



- Strobe flash units for DSC and mobile phones 

- Inverter applications; e.g. TFT displays 

- Power switch for LAN and ADSL systems 

- Medium power DC-to-DC conversion 

- Battery chargers. 

## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|emitter|
|2|collector|
|3|base|



## **DESCRIPTION** 

NPN low VCEsat transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5480X. 

## **MARKING** 

|**TYPE NUMBER**|**MARKING CODE**(1)|
|---|---|
|PBSS4480X|*1Y|



## **Note** 

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2<br>3<br>1<br>sym042<br>3 2 1<br>**----- End of picture text -----**<br>


1. * = p: made in Hong Kong. 

   - = t: made in Malaysia. 

   - = W: made in China. 

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**----- Start of picture text -----**<br>
Fig.1  Simplified outline (SOT89) and symbol.<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**|
|---|---|---|---|
||**NAME**|**DESCRIPTION**|**VERSION**|
|PBSS4480X|−|plastic surface mounted package; collector pad for good heat<br>transfer; 3 leads|SOT89|



2004 Oct 25 

2 

Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

## PBSS4480X 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter|−|80|V|
|VCEO|collector-emitter voltage|open base|−|80|V|
|VEBO|emitter-base voltage|open collector|−|5|V|
|IC|collector current (DC)|note 4|−|4|A|
|ICRM|repetitive peak collector current|tp≤10 ms;δ ≤0.1|−|6|A|
|ICM|peak collector current|t = 1 ms or limited by Tj(max)|−|10|A|
|IB|base current (DC)||−|1|A|
|IBM|peak base current|t≤300µs|−|2|A|
|Ptot|total power dissipation|Tamb≤25°C<br>notes 1 and 2<br>note 2<br>note 3<br>note 4<br>note 5|−<br>−<br>−<br>−<br>−|2.5<br>550<br>1<br>1.4<br>1.6|W<br>mW<br>W<br>W<br>W|
|Tj|junction temperature||−|150|°C|
|Tamb|ambient temperature||−65|+150|°C|
|Tstg|storage temperature||−65|+150|°C|



## **Notes** 

1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm[2] . 

4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm[2] . 

5. Device mounted on a 7 cm[2] ceramic printed-circuit board, 1 cm[2] single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 

2004 Oct 25 

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Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

## PBSS4480X 

**==> picture [234 x 240] intentionally omitted <==**

**----- Start of picture text -----**<br>
001aaa229<br>1600<br>Ptot (1)<br>(mW)<br>1200<br>(2)<br>800<br>(3)<br>400<br>0<br>−50 0 50 100 150 200<br>Tamb (°C)<br>(1) FR4 PCB; 6 cm [2]  mounting pad for collector.<br>(2) FR4 PCB; 1 cm [2]  mounting pad for collector.<br>(3) FR4; standard footprint.<br>**----- End of picture text -----**<br>


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Fig.2  Power derating curves.<br>**----- End of picture text -----**<br>


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Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

## PBSS4480X 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth(j-a)|thermal resistance from junction<br>to ambient|in free air<br>notes 1 and 2<br>note 2<br>note 3<br>note 4<br>note 5|50<br>225<br>125<br>90<br>80|K/W<br>K/W<br>K/W<br>K/W<br>K/W|
|Rth(j-s)|thermal resistance from junction<br>to soldering point||16|K/W|



## **Notes** 

1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm[2] . 

4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm[2] . 

5. Device mounted on a 7 cm[2] ceramic printed-circuit board, 1 cm[2] single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 

**==> picture [497 x 306] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aaa232<br>10 [3]<br>Zth<br>(K/W) (1)<br>(2)<br>10 [2] (3)<br>(4)<br>(5)<br>(6)<br>10 (7)<br>(8)<br>(9)<br>(10)<br>1<br>10 [−][1]<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>Mounted on FR4 printed-circuit board; standard footprint.<br>(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.<br>(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.<br>Fig.3  Transient thermal impedance as a function of pulse time; typical values.<br>**----- End of picture text -----**<br>


2004 Oct 25 

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Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

## PBSS4480X 

**==> picture [483 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aaa233<br>10 [3]<br>Zth<br>(K/W)<br>(1)<br>10 [2]<br>(2)<br>(3)<br>(4)<br>(5)<br>(6)<br>10<br>(7)<br>(8)<br>(9)<br>1<br>(10)<br>10 [−][1]<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm [2] .<br>(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.<br>(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.<br>**----- End of picture text -----**<br>


Fig.4  Transient thermal impedance as a function of pulse time; typical values. 

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**----- Start of picture text -----**<br>
006aaa234<br>10 [3]<br>Zth<br>(K/W)<br>10 [2] (1)<br>(2)<br>(3)<br>(4)<br>(5)<br>10 (6)<br>(7)<br>(8)<br>(9)<br>1<br>(10)<br>10 [−][1]<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm [2] .<br>(1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01.<br>(2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.<br>**----- End of picture text -----**<br>


Fig.5  Transient thermal impedance as a function of pulse time; typical values. 

2004 Oct 25 

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Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

## PBSS4480X 

## **CHARACTERISTICS** 

Tamb = 25 ° 

|Tamb= 25°C|unless otherwise specifed.||||||
|---|---|---|---|---|---|---|
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|ICBO|collector-base cut-off current|VCB= 80 V; IE= 0 A|−|−|100|nA|
|||VCB= 80 V; IE= 0 A;<br>Tj= 150°C|−|−|50|µA|
|ICES|collector-emitter cut-off current|VCE= 80 V; VBE= 0 V|−|−|100|nA|
|IEBO|emitter-base cut-off current|VEB= 5 V; IC= 0 A|−|−|100|nA|
|hFE|DC current gain|VCE= 2 V; IC= 0.5 A|250|400|−|−|
|||VCE= 2 V; IC= 1 A; note 1|250|400|−|−|
|||VCE= 2 V; IC= 2 A; note 1|175|270|−|−|
|||VCE= 2 V; IC= 4 A; note 1|80|140|−|−|
|VCEsat|collector-emitter saturation<br>voltage|IC= 0.5 A; IB= 50 mA|−|25|40|mV|
|||IC= 1 A; IB= 50 mA|−|55|80|mV|
|||IC= 2 A; IB= 40 mA|−|110|160|mV|
|||IC= 4 A; IB= 200 mA;<br>note 1|−|170|230|mV|
|||IC= 5 A; IB= 500 mA;<br>note 1|−|200|270|mV|
|RCEsat|equivalent on-resistance|IC= 5 A; IB= 500 mA;<br>note 1|−|40|54|mΩ|
|VBEsat|base-emitter saturation voltage|IC= 0.5 A; IB= 50 mA|−|0.78|0.85|V|
|||IC= 1 A; IB= 50 mA|−|0.79|0.9|V|
|||IC= 1 A; IB= 100 mA;<br>note 1|−|0.82|0.95|V|
|||IC= 4 A; IB= 400 mA;<br>note 1|−|0.95|1.05|V|
|VBEon|base-emitter turn-on voltage|IC= 2 A; VCE= 2 V|−|0.78|0.85|V|
|fT|transition frequency|IC= 100 mA; VCE= 10 V;<br>f = 100 MHz|120|150|−|MHz|
|Cc|collector capacitance|IE= ie= 0 A; VCB= 10 V;<br>f = 1 MHz|−|35|50|pF|



## **Note** 

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

2004 Oct 25 

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Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

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001aaa734<br>1000<br>hFE (1)<br>800<br>(2)<br>600<br>400 (3)<br>200<br>0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>VCE = 2 V.<br>(1) Tamb = 100 °C.<br>(2) Tamb = 25 °C.<br>**----- End of picture text -----**<br>


- (3) Tamb = −55 °C. 

Fig.6 DC current gain as a function of collector current; typical values. 

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**----- Start of picture text -----**<br>
001aaa737<br>10 [3]<br>VCEsat<br>(mV)<br>10 [2]<br>(1)<br>(2)<br>10<br>(3)<br>1<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>(1) IC/IB = 100.<br>(2) IC/IB = 50.<br>**----- End of picture text -----**<br>


- (3) IC/IB = 10. 

Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. 

## PBSS4480X 

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**----- Start of picture text -----**<br>
001aab057<br>1.2<br>VBE<br>(V)<br>0.8 (1)<br>(2)<br>(3)<br>0.4<br>0<br>10 [-1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>VCE = 2 V.<br>(1) Tamb = −55 °C.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(2) Tamb = 25 °C.<br>**----- End of picture text -----**<br>


- (3) Tamb = 100 °C. 

Fig.7 Base-emitter voltage as a function of collector current; typical values. 

**==> picture [234 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
001aaab059<br>1<br>VCEsat<br>(V)<br>10 [-1]<br>(1)<br>(2)<br>(3)<br>10 [-2]<br>10 [-3]<br>10 [-1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>IC/IB = 20.<br>(1) Tamb = 100 °C.<br>(2) Tamb = 25 °C.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(3) Tamb = −55 °C.<br>**----- End of picture text -----**<br>


Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 

2004 Oct 25 

8 

Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

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**----- Start of picture text -----**<br>
001aaa736<br>1.2<br>VBEsat<br>(V)<br>0.8 (1)<br>(2)<br>(3)<br>0.4<br>0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br>


IC/IB = 20. 

- (1) Tamb = −55 °C. 

- (2) Tamb = 25 °C. 

- (3) Tamb = 100 °C. 

Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. 

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**----- Start of picture text -----**<br>
001aaa733<br>10<br>(4) (3) (2) (1)<br>IC<br>(A)<br>8<br>(5)<br>(6)<br>(7)<br>6<br>(8)<br>(9)<br>4<br>(10)<br>2<br>0<br>0 0.4 0.8 1.2 1.6 2<br>VCE (V)<br>(1) IB = 190 mA. (5) IB = 114 mA. (9) IB = 38 mA.<br>(2) IB = 171 mA. (6) IB = 95 mA. (10) IB = 19 mA.<br>(3) IB = 152 mA. (7) IB = 76 mA.<br>(4) IB = 133 mA. (8) IB = 57 mA.<br>**----- End of picture text -----**<br>


Fig.12 Collector current as a function of collector-emitter voltage; typical values. 

## PBSS4480X 

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**----- Start of picture text -----**<br>
001aaa738<br>10 [3]<br>RCEsat<br>(Ω)<br>10 [2]<br>10<br>1<br>10 [−][1] (1)<br>(2)<br>(3)<br>10 [−][2]<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC/IB = 20.<br>**----- End of picture text -----**<br>


(1) Tamb = 100 °C. 

- (2) Tamb = 25 °C. 

- (3) Tamb = −55 °C. 

Fig.11 Equivalent on-resistance as a function of collector current; typical values. 

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**----- Start of picture text -----**<br>
001aab321<br>1.2<br>VBEon<br>(V)<br>0.8<br>0.4<br>0<br>10 [−][1] 1 10 10 [2] 10 [3] 10 [4]<br>IC (mA)<br>Tamb = 25 °C.<br>**----- End of picture text -----**<br>


Fig.13 Base-emitter turn-on voltage as a function of collector current; typical values. 

2004 Oct 25 

9 

Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

## PBSS4480X 

## **Reference mounting conditions** 

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**----- Start of picture text -----**<br>
32 mm<br>2.5 mm<br>40<br>mm 1 mm<br>3 mm<br>2.5 mm<br>1 mm<br>0.5 mm<br>5 mm<br>3.96 mm<br>1.6 mm<br>001aaa234<br>Fig.14  FR4, standard footprint.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
handbook, halfpage 32 mm<br>10 mm<br>40 mm 10 mm<br>2.5 mm<br>1 mm<br>0.5 mm<br>5 mm<br>3.96 mm<br>1.6 mm<br>MLE322<br>Fig.15  FR4, mounting pad for collector 1 cm [2] .<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
32 mm<br>30 mm<br>20<br>mm<br>40<br>mm<br>2.5 mm<br>1 mm<br>0.5 mm<br>5 mm<br>3.96 mm<br>1.6 mm<br>001aaa235<br>**----- End of picture text -----**<br>


Fig.16  FR4, mounting pad for collector 6 cm[2] . 

2004 Oct 25 

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Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

## PBSS4480X 

## **PACKAGE OUTLINE** 

**Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89** 

**==> picture [480 x 571] intentionally omitted <==**

**----- Start of picture text -----**<br>
D B<br>A<br>bp3<br>E<br>HE<br>Lp<br>1 2 3<br>bp2 c<br>w M bp1<br>e1<br>e<br>0 2 4 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w<br>1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2<br>mm 3.0 1.5 0.13<br>1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>99-09-13<br> SOT89 TO-243 SC-62<br>04-08-03<br>**----- End of picture text -----**<br>


2004 Oct 25 

11 

Philips Semiconductors 

## 80 V, 4 A NPN low VCEsat (BISS) transistor 

## PBSS4480X 

## **DATA SHEET STATUS** 

|**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**|
|---|---|---|---|
|I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.|
|II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.|
|III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).|



## **Notes** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

2004 Oct 25 

12 

## **Philips Semiconductors – a worldwide company** 

## **Contact information** 

For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . 

© Koninklijke Philips Electronics N.V. 2004 

SCA76 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

**==> picture [214 x 95] intentionally omitted <==**

Printed in The Netherlands 

Date of release: 2004 Oct 25 Document order number: 9397 750 13924 

R75/02/pp13 



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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.