# Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 300 mW, SOT-23, Surface Mount
**URL**: https://novapart.co/products/PBSS4140T,215/bipolar-bjt-single-transistor-npn-40-v-1-a-300-mw
**SKU**: PBSS4140T,215
**Manufacturer**: NEXPERIA
**Price**: €0.1370
**Stock**: 10+
**Lead Time**: 373 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation Pd:300mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; Transistor Case Style:
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 300hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 40V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:8736189/)
## **DISCRETE SEMICONDUCTORS**
**DATA SHEET PBSS4140T** 40 V, 1A NPN low V CEsat (BISS) transistor
2005 Feb 24 Supersedes data of 2005 Feb 14
**Philips Semiconductors**
**PBSS4140T**
## **40 V, 1A NPN low VCEsat (BISS) transistor**
## **FEATURES**
- Low collector-emitter saturation voltage
- High current capabilities.
- Improved device reliability due to reduced heat generation.
## **APPLICATIONS**
- General purpose switching and muting
- LCD backlighting
- Supply line switching circuits
- Battery driven equipment (mobile phones, video cameras and hand-held devices).
## **DESCRIPTION**
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T.
## **MARKING**
|**TYPE NUMBER**|**MARKING CODE**(1)|
|---|---|
|PBSS4140T|ZT*|
## **Note**
1. * = p: made in Hong Kong.
- = t: made in Malaysia.
- = W: made in China.
## **QUICK REFERENCE DATA**
|**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**|
|---|---|---|---|
|VCEO|collector-emitter voltage|40|V|
|ICM|peak collector current|2|A|
|RCEsat|equivalent on-resistance|<500|mΩ|
## **PINNING**
|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|base|
|2|emitter|
|3|collector|
**==> picture [242 x 176] intentionally omitted <==**
**----- Start of picture text -----**
handbook, halfpage 3
3
1
2
1 2
Top view MAM255
Fig.1 Simplified outline (SOT23) and symbol.
**----- End of picture text -----**
## **ORDERING INFORMATION**
|**TYPE**
**NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**|
|---|---|---|---|
||**NAME**|**DESCRIPTION**|**VERSION**|
|PBSS4140T|−|plastic surface mounted package; 3 leads|SOT23|
2005 Feb 24
2
Philips Semiconductors
PBSS4140T
## 40 V, 1A NPN low VCEsat (BISS) transistor
## **LIMITING VALUES**
In accordance with the Absolute Maximum Rating System (IEC 60134).
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter|−|40|V|
|VCEO|collector-emitter voltage|open base|−|40|V|
|VEBO|emitter-base voltage|open collector|−|5|V|
|IC|collector current (DC)||−|1|A|
|ICM|peak collector current||−|2|A|
|IBM|peak base current||−|1|A|
|Ptot|total power dissipation|Tamb≤25°C; note 1|−|300|mW|
|||Tamb≤25°C; note 2|−|450|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operating ambient temperature||−65|+150|°C|
## **Notes**
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm[2] .
## **THERMAL CHARACTERISTICS**
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**TYPICAL**|**UNIT**|
|---|---|---|---|---|
|Rth(j-a)|thermal resistance from junction
to ambient|in free air; note 1|417|K/W|
|||in free air; note 2|278|K/W|
## **Notes**
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm[2] .
2005 Feb 24
3
Philips Semiconductors
## 40 V, 1A NPN low VCEsat (BISS) transistor
## PBSS4140T
## **CHARACTERISTICS**
Tamb = 25 °
|Tamb= 25°C|unless otherwise specifed.||||||
|---|---|---|---|---|---|---|
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|ICBO|collector-base cut-off
current|VCB= 40 V; IE= 0 A|−|−|100|nA|
|||VCB= 40 V; IE= 0 A; Tamb= 150°C|−|−|50|µA|
|ICEO|collector-emitter cut-off
current|VCE= 30 V; IB= 0 A|−|−|100|nA|
|IEBO|emitter-base cut-off current|VEB= 5 V; IC= 0 A|−|−|100|nA|
|hFE|DC current gain|VCE= 5 V; IC= 1 mA|300|−|−||
|||VCE= 5 V; IC= 500 mA|300|−|900||
|||VCE= 5 V; IC= 1 A|200|−|−||
|VCEsat|collector-emitter saturation
voltage|IC= 100 mA; IB= 1 mA|−|−|200|mV|
|||IC= 500 mA; IB= 50 mA|−|−|250|mV|
|||IC= 1 A; IB= 100 mA|−|−|500|mV|
|RCEsat|equivalent on-resistance|IC= 500 mA; IB= 50 mA; note 1|−|260|<500|mΩ|
|VBEsat|base-emitter saturation
voltage|IC= 1 A; IB= 100 mA|−|−|1.2|V|
|VBEon|base-emitter turn-on
voltage|VCE= 5 V; IC= 1 A|−|−|1.1|V|
|fT|transition frequency|IC= 50 mA; VCE= 10 V; f = 100 MHz|150|−|−|MHz|
|Cc|collector capacitance|VCB= 10 V; IE= Ie= 0 A; f = 1 MHz|−|−|10|pF|
## **Note**
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2005 Feb 24
4
Philips Semiconductors
## 40 V, 1A NPN low VCEsat (BISS) transistor
**==> picture [242 x 238] intentionally omitted <==**
**----- Start of picture text -----**
MLD660
1000
handbook, halfpage
hFE
800
(1)
600
(2)
400
(3)
200
0
10 [−][1] 1 10 10 [2] 10 [3] 10 [4]
IC (mA)
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
**----- End of picture text -----**
**==> picture [203 x 22] intentionally omitted <==**
**----- Start of picture text -----**
Fig.2 DC current gain as a function of collector
current; typical values.
**----- End of picture text -----**
**==> picture [242 x 305] intentionally omitted <==**
**----- Start of picture text -----**
MLD662
10 [3]
handbook, halfpage
VCEsat
(mV)
(1)
10 [2]
(3)
(2)
10
1
1 10 10 [2] 10 [3] 10 [4]
IC (mA)
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
**----- End of picture text -----**
## PBSS4140T
**==> picture [241 x 217] intentionally omitted <==**
**----- Start of picture text -----**
MLD661
10
handbook, halfpage
VBE
(V)
1 (1)
(2)
(3)
10 [−][1]
10 [−][1] 1 10 10 [2] 10 [3] 10 [4]
IC (mA)
VCE = 5 V.
(1) Tamb = −55 °C.
**----- End of picture text -----**
**==> picture [58 x 8] intentionally omitted <==**
**----- Start of picture text -----**
(2) Tamb = 25 °C.
**----- End of picture text -----**
(3) Tamb = 150 °C. Fig.3 Base-emitter voltage as a function of collector current; typical values.
**==> picture [234 x 228] intentionally omitted <==**
**----- Start of picture text -----**
mld663
10 [2]
RCEsat
(Ω)
10
(1) (2)
1
(3)
10 [−][1]
10 [−][1] 1 10 10 [2] 10 [3] 10 [4]
IC (mA)
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
**----- End of picture text -----**
- (3) Tamb = −55 °C.
**==> picture [203 x 22] intentionally omitted <==**
**----- Start of picture text -----**
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
**----- End of picture text -----**
2005 Feb 24
5
Philips Semiconductors
## 40 V, 1A NPN low VCEsat (BISS) transistor
## PBSS4140T
**==> picture [242 x 305] intentionally omitted <==**
**----- Start of picture text -----**
MLD664
400
handbook, halfpage
fT
(MHz)
300
200
100
0
0 200 400 600 800 1000
IC (mA)
VCE = 10 V.
Fig.6 Transition frequency as a function of
collector current.
**----- End of picture text -----**
2005 Feb 24
6
Philips Semiconductors
## 40 V, 1A NPN low VCEsat (BISS) transistor
## PBSS4140T
## **PACKAGE OUTLINE**
**==> picture [480 x 584] intentionally omitted <==**
**----- Start of picture text -----**
Plastic surface mounted package; 3 leads SOT23
D B E A X
HE v M A
3
Q
A
A1
1 2 c
e1 bp w M B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A max.A1 bp c D E e e1 HE Lp Q v w
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
99-09-13
SOT23 TO-236AB
04-11-04
**----- End of picture text -----**
2005 Feb 24
7
Philips Semiconductors
## 40 V, 1A NPN low VCEsat (BISS) transistor
## PBSS4140T
## **DATA SHEET STATUS**
|**LEVEL**|**DATA SHEET**
**STATUS**(1)|**PRODUCT**
**STATUS**(2)(3)|**DEFINITION**|
|---|---|---|---|
|I|Objective data|Development|This data sheet contains data from the objective specifcation for product
development. Philips Semiconductors reserves the right to change the
specifcation in any manner without notice.|
|II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specifcation without
notice, in order to improve the design and supply the best possible
product.|
|III|Product data|Production|This data sheet contains data from the product specifcation. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notifcation
(CPCN).|
## **Notes**
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
## **DEFINITIONS**
**Short-form specification** The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
**Limiting values definition** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
**Application information** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
## **DISCLAIMERS**
**Life support applications** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
**Right to make changes** Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2005 Feb 24
8
## **Philips Semiconductors – a worldwide company**
## **Contact information**
For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** .
> © Koninklijke Philips Electronics N.V. 2005
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
**==> picture [214 x 95] intentionally omitted <==**
Printed in The Netherlands
Date of release: 2005 Feb 24 Document order number: 9397 750 14742
R75/05/pp9
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---
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