# PHOTOTRANSISTOR SENSOR, 850NM ![Product image](https://novapart.co/image/farnell:2895504/) **URL**: https://novapart.co/products/OPB315WZ/phototransistor-sensor-850nm **SKU**: OPB315WZ **Manufacturer**: TT ELECTRONICS / OPTEK TECHNOLOGY **Category**: Sensors & Transducers || Sensors || Light Sensors || Optical / Slot Photoelectric Sensors **Price**: €5.5000 **Stock**: 100+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Product Range | OPB315 Series | | Sensor Output | Phototransistor | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2895504/) **==> picture [36 x 7] intentionally omitted <==** **----- Start of picture text -----**
OPB315L
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- Lateral package - Opaque black plastic **==> picture [45 x 7] intentionally omitted <==** **----- Start of picture text -----**
OPB315WZ
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- 850 nm wavelength - Choice of leads or wires Each slotted optical switch in this series consists of an infrared emitting diode (LED) and a NPN silicon phototransistor mounted on opposite sides of a 0.90” (22.9 mm) wide slot in an opaque black plastic package. The **OPB315L** has 0.25” minimum leads, while the **OPB315WZ** has a minimum of 24” (610 mm) 26 AWG wires. Phototransistor switching takes place whenever an opaque object passes through the slot. **==> picture [507 x 372] intentionally omitted <==** **----- Start of picture text -----**
Ordering Information
Part LED Peak Slot Width / Aperture Wire or Lead
 Non-contact object sensing Number Wavelength Sensor Depth Emitter / Sensor Length / Gage
 Assembly line automation
OPB315L 0.25” / N/A
 Machine automation
850 nm Transistor 0.90"/0.46” 0.03” R / 0.03” R
 Equipment security OPB315WZ 24” min/
26 AWG wires
_  Machine safety T=
OPB315L
SYMBOLIZATION LA [47.63]
SYMBOLIZEFOR ANODEWHITE DOT CS]) [a| 2>cS)j Qt }re-—:41.281.62587sS78)= [3.18]125
[3.18]
2X 0.125
OPB315L
1 3 [25.40]
° e [2.0340.13] 1.000 OPTICAL ¢ [6.35]
.080+.005 [22.86] 250
Vv -900
Vv PN _ _ [14.86
a 585 ]
e e Tt
2 4 Cc3.18J AX .25[6.35] MIN.
125 — Pes) Fg)[2.54] ie
Pin # LED Pin # Transistor _ White Dot
1 2 Cathode Anode 3 4 Collector Emitter © Ff = 4 ©)
— NOTES: PINPIN 12 PIN 3
1. TOLERANCES ARE ± 0.010 [0.254] UNLESS
OTHERWISE SPECIFIED.
5 DIMENSIONS ARE IN: [MILLIMETERS] CATHODE OTER
RoHS INCHES
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OPB315WZ
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NOTES: **==> picture [110 x 31] intentionally omitted <==** **----- Start of picture text -----**
1. TOLERANCES ARE ± 0.010 UNLESS
OTHERWISE SPECIFIED.
DIMENSIONS ARE IN: [MILLIMETERS]
INCHES
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OPB315WZ
Red White
e e
V ir,
e e
Black Green
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|**Pin #/**
**Color**|**LED**|**Pin #/**
**Color**|**Transistor**| |---|---|---|---| |Black|Cathode|White|Collector| |Red|Anode|Green|Emitter| |Electrical Specifications|Electrical Specifications| |---|---| |Absolute Maximum Ratings (T,= 25°C unlessotherwise noted)|| |Storage Temperature Range|-40oC to +80oC| |Operating Temperature Range|-40oC to +80oC| |Reverse Voltage|2.0 V| |Continuous Forward Current|50 mA| |Peak Forward Current [measured at 1 µs pulse width and 300 pps]|1.0 A| |Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]|260° C(1)(2)| |Power Dissipation (Input Diode)|100 mW| |Power Dissipation (Output Phototransistor)|100 mW| |Electrical Characteristics (T,= 25° C unless otherwise noted)
~~SYMBOL~~
~~PARAMETER~~
~~/MIN|TYP|MAX|UNITS~~
~~TESTCONDITIONS~~|Electrical Characteristics (T,= 25° C unless otherwise noted)
~~SYMBOL~~
~~PARAMETER~~
~~/MIN|TYP|MAX|UNITS~~
~~TESTCONDITIONS~~|Electrical Characteristics (T,= 25° C unless otherwise noted)
~~SYMBOL~~
~~PARAMETER~~
~~/MIN|TYP|MAX|UNITS~~
~~TESTCONDITIONS~~|Electrical Characteristics (T,= 25° C unless otherwise noted)
~~SYMBOL~~
~~PARAMETER~~
~~/MIN|TYP|MAX|UNITS~~
~~TESTCONDITIONS~~|Electrical Characteristics (T,= 25° C unless otherwise noted)
~~SYMBOL~~
~~PARAMETER~~
~~/MIN|TYP|MAX|UNITS~~
~~TESTCONDITIONS~~|Electrical Characteristics (T,= 25° C unless otherwise noted)
~~SYMBOL~~
~~PARAMETER~~
~~/MIN|TYP|MAX|UNITS~~
~~TESTCONDITIONS~~|Electrical Characteristics (T,= 25° C unless otherwise noted)
~~SYMBOL~~
~~PARAMETER~~
~~/MIN|TYP|MAX|UNITS~~
~~TESTCONDITIONS~~| |---|---|---|---|---|---|---| |~~SYMBOL~~|~~PARAMETER~~
~~/MIN~~|~~/MIN|~~|~~|TYP|~~|~~|MAX|~~|~~|UNITS~~|~~TESTCONDITIONS~~| |**Input Diode**
~~SYMBOL~~
~~PARAMETER~~
~~/MIN | TYP | MAX | UNITS~~
~~TEST CONDITIONS~~||||||| |VF|Forward Voltage|-|1.4|1.7|V|IF= 20 mA| |IR|Reverse Current|-|-|100|µA|VR= 2 V| |**Output Phototransistor**(see OP550 for additional information)||||||| |V(BR)(CEO)|Collector-Emitter Breakdown Voltage|30|-|-|V|ICE= 100 µA, IF= 0 mA| |V(BR)(ECO)|Emitter-Collector Breakdown Voltage|5.0|-|-|V|IEC= 100 µA, IF= 0 mA, EE= 0| |ICEO|Collector-Emitter Leakage Current|-|-|100|nA|VCE= 10.0 V, IF= 0 mA, EE= 0| |**Coupled**||||||| |IC(ON)|On-State Collector Current|0.5|1.0|-|mA|VCE= 0.4 V, IF= 20 mA| |VCE(SAT)|Collector-Emitter|-|-|0.4|V|IC= 500 µA, IF= 20 mA| Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 1.33 mW/° C above 25° C. ## **OPB315** **==> picture [499 x 553] intentionally omitted <==** **----- Start of picture text -----**
Forward Voltage vs Forward Current vs
Temperature Optical Power vs Forward Current vs
Temperature
1.8 4.0
-60° C
-40° C Normalized at IF = 20 mA, TA = 20°C
3.5 -20° C
1.6 0° C
20° C
40° C
3.0
—SS = 60° C TT,
1.4 80° C
100° C
a 2.5 OE
1.2 gern 2.0
cae LEE
-60° C
-40° C 1.5
1.0 -20° C
aa ny Zo
0° C
20° C 1.0
40° C
0.8 PTT TT 60° C en 22
80° C
100° C 0.5
120° C
0.6 0.0 > si
0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50
Forward Current (mA) Forward Current IF (mA)
OPB315 - Flag Next to Emitter OPB315 - Flag Next to Sensor
1.2 1.2
Top to Bottom
Top to Bottom
1.0 1.0
0.8 0.8
Bawanneven
\
0.6 0.6
Left to Right Right to Left
Left to Right Right to Left
0.4 A 0.4 i. f\
\
\
0.20.0 OAMAM—— = 0.20.0 J h -—
0.00 0.05 0.10 0.15 0.20 0.25 0.00 0.05 0.10 0.15 0.20 0.25
Displacement Distance (inches) Displacement Distance (inches)
Response
C(ON)
Normalized I
Response
C(ON)
Normalized I
Relative Output Power
Typical Forward Voltage (V)
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