# Bipolar (BJT) Single Transistor, PNP, 60 V, 3 A, 2 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2454060/)

**URL**: https://novapart.co/products/NZT660A/bipolar-bjt-single-transistor-pnp-60-v-3-a-2-w-sot
**SKU**: NZT660A
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1930
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:75MHz; Power Dissipation Pd:2W; DC Collector Current:-3A; DC Current Gain hFE:25hFE; Tran

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 75MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 25hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2454060/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**==> picture [56 x 10] intentionally omitted <==**

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January 2014<br>**----- End of picture text -----**<br>


## **NZT660 / NZT660A PNP Low Saturation Transistor** 

## **Description** 

These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 

**==> picture [122 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>3<br>2<br>1 SOT-223<br>1. Base   2,4. Collector   3. Emitter<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|
|---|---|---|---|
|NZT660|660|SOT-223 4L|Tape and Reel|
|NZT660A|660A|SOT-223 4L|Tape and Reel|



## **Absolute Maximum Ratings**[(1),(2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**NZT660**|**NZT660A**||
|VCEO|Collector-Emitter Voltage|-60|-60|V|
|VCBO|Collector-Base Voltage|-80|-60|V|
|VEBO|Emitter-Base Voltage|-5|-5|V|
|IC|Collector Current - Continuous|-3|-3|A|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to +150|-55 to +150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150°C. 

2. These are steady state limits. Fairchild Semiconductor should be consulted on application involving pulsed or low-duty cycle operation. 

© 2002 Fairchild Semiconductor Corporation NZT660 / NZT660A Rev. 1.1.0 

www.fairchildsemi.com 

1 

## **Thermal Characteristics**[(3)] 

Values are at TA = 25°C unless otherwise noted. **Symbol Parameter Max. Unit** PD Total Device Dissipation 2 W R θ JA Thermal Resistance, Junction to Ambient 62.5 °C/W ~~i~~ **Note:** 3. PCB size: FR-4 76 x 114 x 1.57 mm[3] (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

**Symbol Parameter Conditions Min. Max. Unit** Collector-Emitter Breakdown ~~EER~~ BVCEO Voltage IC = -10 mA -60 V NZT660 -80 BVCBO Collector-Base Breakdown Voltage IC = -100 μ A V NZT660A -60 ~~i~~ BVEBO Emitter-Base Breakdown Voltage IE = -100 μ A -5 V VCB = -30 V -100 nA ICBO Collector-Base Cut-Off Current VCB = -30 V, TA = 100 ° C -10 μ A IEBO Emitter-Base Cut-Off Current VEB = -4 V -100 nA ~~=~~ IC = -100 mA, VCE = -2 V 70 NZT660 100 300 IC = -500 mA, VCE = -2 V hFE DC Current Gain[(4)] NZT660A 250 550 IC = -1 A, VCE = -2 V 80 IC = -3 A, VCE = -2 V 25 IC = -1 A, IB = -100 mV -300 Collector-Emitter Saturation VCE(sat) Voltage[(4)] IC = -3 A, IB = -300 mV NZT660 -550 mV NZT660A -500 ~~i~~ VBE(sat) Base-Emitter Saturation Voltage[(4)] IC = -1 A, IB = -100 mV -1.25 V VBE(on) Base-Emitter On Voltage[(4)] IC = -1 A, VCE = -2 V -1 V Cob Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 45 pF fT Transition Frequency f = 100 MHzIC = -100 mA, VCE = -5 V, 75 MHz ~~=~~ **Note:** 4. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. 

© 2002 Fairchild Semiconductor Corporation NZT660 / NZT660A Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

**==> picture [431 x 543] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.41.2 TM β = 10 TTT TM 1.61.4 a  V    = 2.0Vce ae A<br>1.2<br>1 Te CTT TT a ae a<br> - 40°C 1<br>a a a Zeal PTA TATE TIMI ET 1 YA<br>0.8  - 40°C<br>0.6 a genie 25 ° C 0.8 a aA a<br>0.6<br>0.4 CT 125 ° C TTT rT 25°C et<br>0.4<br>125°C<br>0.2 PANNA Z inantTUE EET TUTTI 0.2 a0riaAilA|<br>0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10<br>I   - COLLECTOR CURRENT (A)C I   - COLLECTOR CURRENT (A)C<br>Figure 1. Base-Emitter Saturation Voltage Figure 2. Base-Emitter On Voltage<br>vs. Collector Current vs. Collector Current<br>0.8 400<br>β = 10 f  = V    = 2.0Vce1.0MHz<br>0.7 ee a | 350 ee<br> C                  obo<br>0.6 300<br>0.5 81 EN  125°C 250 CCCsSeeintrestSen Eo<br> 25°C<br>0.40.3 aa a Yal 150200 HIEPESSH EH<br>- 40°C  C                  ibo<br>0.2 TI nT 100 PSH EINRS  Et<br>0.10 alllTil CLIT 500 estEEE EHH<br>0.01 0.1 1 10 0.1 0.5 1 10 20 50 100<br>I   - COLLECTOR CURRENT (mA)C V    - COLLECTOR VOLTAGE (V)CE<br>Figure 3. Collector-Emitter Saturation Voltage Figure 4. Input / Output Capacitance<br>vs. Collector Current vs. Reverse Bias Voltage<br>1000<br> 125°C  V    = 2.0Vce<br>900 TI nn<br>800700 EeEEA 00<br>600<br> 25°C<br>500 8} ee |<br>COT<br>400<br>300<br>TMM TTI COT TOTTI TT<br> - 40°C<br>200 COTT<br>100 EN<br>0 EN<br>0.0001 0.001 0.01 0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C<br>FE<br>CESAT<br>BEON<br>BESAT<br>V     - BASE-EMITTER ON VOLTAGE (V)<br>V      -BASE-EMITTER SATURATION VOLTAGE(V)<br>CAPACITANCE (pf)<br>V      - COLLECTOR-EMITTER VOLTAGE (V)<br>H    - CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 5. Current Gain vs. Collector Current** 

© 2002 Fairchild Semiconductor Corporation NZT660 / NZT660A Rev. 1.1.0 

www.fairchildsemi.com 

3 

## **Physical Dimensions** 

**==> picture [73 x 15] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT-223<br>**----- End of picture text -----**<br>


## **Figure 6. MOLDED PACKAGE, SOT-223, 4 LEAD (ACTIVE)** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf ._ 

_For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf_ . 

© 2002 Fairchild Semiconductor Corporation NZT660 / NZT660A Rev. 1.1.0 

www.fairchildsemi.com 

4 

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## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change<br>in anymanner without notice.|
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|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I66 

© Fairchild Semiconductor Corporation 

www.fairchildsemi.com 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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