# Bipolar (BJT) Single Transistor, NPN, 60 V, 3 A, 1 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2454059RL/)

**URL**: https://novapart.co/products/NZT560A/bipolar-bjt-single-transistor-npn-60-v-3-a-1-w-sot
**SKU**: NZT560A
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.2120
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:75MHz; Power Dissipation Pd:1W; DC Collector Current:3A; DC Current Gain hFE:25hFE; Transis

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Dc Current Gain Hfe | 25hFE |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Dc Collector Current | 3A |
| Power Dissipation Pd | 1W |
| Transition Frequency | 75MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 25hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 60V |
| Automotive Qualification Standard | - |
| Collector Emitter Voltage V(Br)Ceo | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2454059RL/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **NZT560 / NZT560A NPN Low-Saturation Transistor** 

## **Features** 

- These devices are designed with high-current gain and low-saturation 

- voltage with collector currents up to 3 A continuous. 

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4<br>3<br>2<br>1 SOT-223<br>1. Base   2,4. Collector   3. Emitter<br>**----- End of picture text -----**<br>


**Ordering Information** 

**Part Number Marking Package Packing Method** NZT560 560 SOT-223 4L Tape and Reel NZT560A 560A SOT-223 4L Tape and Reel ~~rs~~ 

## **Absolute Maximum Ratings**[(1),(2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCEO|Collector-Emitter Voltage|60|V|
|VCBO|Collector-Base Voltage|80|V|
|VEBO|Emitter-Base Voltage|5|V|
|IC|Collector Current - Continuous|3|A|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to +150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 

© 2003 Fairchild Semiconductor Corporation NZT560 / NZT560A Rev. 1.1.0 

www.fairchildsemi.com 

## **Thermal Characteristics**[(3)] 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVCEO|Collector-Emitter Breakdown Voltage|IC= 10 mA, IB= 0||60||V|
|BVCBO|Collector-Base Breakdown Voltage|IC= 100μA, IE= 0||80||V|
|BVEBO|Emitter-Base Breakdown Voltage|IE= 100μA, IC= 0||5||V|
|ICBO|Collector Cut-Off Current|VCB= 30 V, IE= 0|||100|nA|
|||VCB= 30 V, IE= 0, TA= 100°C|||10|μA|
|IEBO|Emitter Cut-Off Current|VEB= 4 V, IC= 0|||100|nA|
|hFE|DC Current Gain(4)|IC= 100 mA, VCE= 2 V||70|||
|||IC= 500 mA, VCE= 2 V|NZT560|100|300||
||||NZT560A|250|550||
|||IC= 1 A, VCE= 2 V||80|||
|||IC= 3 A, VCE= 2 V||25|||
|VCE(sat)|Collector-Emitter Saturation<br>Voltage(4)|IC= 1 A, IB= 100 mA|||300|mV|
|||IC= 3 A, IB= 300 mA|NZT560||450||
||||NZT560A||400||
|VBE(sat)|Base-Emitter Saturation Voltage(4)|IC= 1 A, IB= 100 mA|||1.25|V|
|VBE(on)|Base-Emitter On Voltage(4)|IC= 1 A, VCE= 2 V|||1|V|
|Cobo|Output Capacitance|VCB= 10 V, IE= 0, f = 1.0 MHz|||30|pF|
|fT|Transition Frequency|IC= 100 mA, VCE= 5 V,<br>f = 100 MHz||75||MHz|



## **Note:** 

4. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0% 

© 2003 Fairchild Semiconductor Corporation NZT560 / NZT560A Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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**----- Start of picture text -----**<br>
1.4 1.4<br>β = 10  V    = 2.0Vce<br>1.2 ME EME CTI Tl 1.2 TR<br>1 1<br>A a<br> - 40 °C  - 40 °C<br>0.8 0.8<br>0 a a ZA<br>0.6 25 °C 0.6 25 °C<br>ce Sena anal<br>0.4 125 °C 0.4<br>125 °C<br>a aie ie COT rr<br>0.2 NT A 0.2 terme OTM Fs iull CE TLE<br>0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10<br>I   - COLLECTOR CURRENT (A)C I   - COLLECTOR CURRENT (A)C<br>Figure 1. Base-Emitter Saturation Voltage  Figure 2. Base-Emitter On Voltage<br>vs. Collector Current vs. Collector Current<br>0.8 450<br>β = 10 f  = 1.0 MHz<br>0.6 CLE ETTITE Ci | 400350 SSoHS  C                ibo SI<br>a<br>/  25°C 300 CO oi<br> 125°C<br>CCC 250 a ll<br>0.4<br>) 200 a eeell<br> - 40°C 150<br>0.2 eal 100 em<br> C                obo<br>50<br>0 YTV | eeML L277eatiillWY, | Il 0 aeSPE EETtee llSS TT<br>0.001 0.01 0.1 1 10 0.1 0.2 0.5 1 2 5 10 20 50 100<br>I  - COLLECTOR CURRENT (mA)C (mA) V    - COLLECTOR VOLTAGE (V)CE<br>Figure 3. Collector-Emitter Saturation Voltage Figure 4. Input / Output Capacitance<br>vs. Collector Current vs. Reverse Bias Voltage<br>400 700<br>VCE = 2 V NZT560 NZT560A<br>600 T A =125 o C<br>300 T A =150 o C 500<br>AS011 25 MEAT oC TDS | 400 ee 25oC 1 V CE  = 2 V<br>200 Sn<br>=, RE 300 eaee,<br>-40 o C -40 o C<br>100 EET 200 gettRatth H<br>A AM TI ANT 100 tH ert FT NR<br>0.0010 PCCM 0.010 COLT 0.100 CEI 1.000 DN 10.000 0.0010 EEE 0.010 0.100 St 1.000 10.000<br>IC- COLLECTOR CURRENT [A] IC- COLLECTOR CURRENT [A]<br>BESAT<br>CESAT<br>BEON<br>V     - BASE-EMITTER ON VOLTAGE (V)<br>V      -BASE-EMITTER SATURATION VOLTAGE(V)<br>CAPACITANCE (pf)<br>V      - COLLECTOR-EMITTER VOLTAGE (V)<br>- DC CURRENT GAIN - DC CURRENT GAIN<br>FE FE<br>h h<br>**----- End of picture text -----**<br>


**Figure 5. Current Gain vs. Collector Current** 

**Figure 6. Current Gain vs. Collector Current** 

© 2003 Fairchild Semiconductor Corporation NZT560 / NZT560A Rev. 1.1.0 

www.fairchildsemi.com 

3 

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**----- Start of picture text -----**<br>
6.70<br>B<br>6.20<br>0.10 C B<br>3.10<br>2.90 3.25<br>4<br>1.90<br>A<br>3.70<br>6.10<br>3.30<br>1.90<br>1 3<br>0.84<br>0.60<br>2.30<br>0.95 2.30<br>4.60<br>0.10 C B LAND PATTERN RECOMMENDATION<br>SEE DETAIL A<br>1.80 MAX<br>0.08 C 7.30<br>C 6.70<br>0.10<br>0.00<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>   A)  DRAWING BASED ON JEDEC REGISTRATION<br>        TO-261C, VARIATION AA.<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>R0.15±0.05<br>10°    C) DIMENSIONS DO NOT INCLUDE BURRS<br>GAGE 5°        OR MOLD FLASH. MOLD FLASH OR BURRS<br>R0.15±0.05        DOES NOT EXCEED 0.10MM.<br>PLANE<br>   D) DIMENSIONING AND TOLERANCING PER<br>        ASME Y14.5M-2009.<br>10° 0.35    E)  LANDPATTERN NAME: SOT230P700X180-4BN<br>0° [ TYP] 0.20    F)  DRAWING FILENAME: MKT-MA04AREV3<br>0.25 10°<br>5° 0.60 MIN<br>SEATING<br>1.70<br>PLANE<br>DETAIL A<br>SCALE: 2:1<br>**----- End of picture text -----**<br>


ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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