# IGBT Module, PIM Half Bridge Inverter, 42 A, 1.85 V, 146 W, 175 °C, PIM ![Product image](https://novapart.co/image/farnell:3265492/) **URL**: https://novapart.co/products/NXH40T120L3Q1SG/igbt-module-pim-half-bridge-inverter-42-a-185-v **SKU**: NXH40T120L3Q1SG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || IGBT Modules **Price**: €43.0500 **Stock**: 10+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (15-Jan-2018) | | Product Range | NXH40T120L3Q1 | | Igbt Technology | Trench Field Stop | | Igbt Termination | Solder | | Power Dissipation | 146W | | Igbt Configuration | PIM Half Bridge Inverter | | Transistor Mounting | Panel | | Dc Collector Current | 42A | | Power Dissipation Pd | 146W | | Transistor Case Style | PIM | | Operating Temperature Max | 175°C | | Junction Temperature Tj Max | 175°C | | Continuous Collector Current | 42A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Voltage V(Br)Ceo | 1.2kV | | Collector Emitter Saturation Voltage | 1.85V | | Collector Emitter Saturation Voltage Vce(On) | 1.85V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3265492/) **DATA SHEET www.onsemi.com** ## Q1 3-Phase TNPC Module ## NXH40T120L3Q1 The NXH40T120L2Q1 is a power module containing a three channel T−type neutral−point clamped (TNPC) circuit. Each channel has two 1200 V, 40 A IGBTs with inverse diodes and two 650 V, 25 A IGBTs with inverse diodes. The module contains an NTC thermistor. ## **Features** - Low Package Height **==> picture [116 x 29] intentionally omitted <==** **----- Start of picture text -----**
Q1 3−TNPC
CASE 180AS
Solder pins follow similar pattern
**----- End of picture text -----**
- Compact 82.5 mm x 37.4 mm x 12 mm Package - Options with Press−fit Pins and Solder Pins - Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM - Thermistor ## **MARKING DIAGRAM** **==> picture [66 x 14] intentionally omitted <==** **----- Start of picture text -----**
NXH40T120L3Q1xG
ATYYWW
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- This Device is Pb−Free and is RoHS Compliant ## **Applications** - Solar Inverters - UPS - Energy Storage Systems NXH40T120L3Q1x = Device Code A = Assembly Site Code T = Test Site Code YYWW = Year and Work Week Code G = Pb−Free Package ## **PIN CONNECTIONS** ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 5 of this data sheet. **Figure 1. NXH40T120L3Q1 Schematic Diagram** Publication Order Number: **NXH40T120L3Q1/D** **1** © Semiconductor Components Industries, LLC, 2017 **September, 2021 − Rev. 2** **NXH40T120L3Q1** ## **MAXIMUM RATINGS** (Note 1) |**MAXIMUM RATINGS**(Note 1)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |**IGBT (Q1, Q4, Q5, Q8, Q9, Q12)**|||| |Collector�Emitter Voltage|VCES|1200|V| |Gate�Emitter Voltage|VGE|±20|V| |Continuous Collector Current @ TC= 80°C (TJ= 175°C)|IC|40|A| |Pulsed Collector Current (TJ= 175°C)|ICpulse|120|A| |Maximum Power Dissipation (TJ= 175�C)|Ptot|145|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|175|°C| |**DIODE (D1, D4, D5, D8, D9, D12)**|||| |Peak Repetitive Reverse Voltage|VRRM|1200|V| |Continuous Forward Current @ TC= 80°C (TJ= 175°C)|IF|25|A| |Repetitive Peak Forward Current (TJ= 175°C)|IFRM|75|A| |Maximum Power Dissipation (TJ= 175°C)|Ptot|55|W| |Minimum Operating Junction Temperature|TJMIN|�40|°C| |Maximum Operating Junction Temperature|TJMAX|175|°C| |**IGBT+DIODE (Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11)**|||| |Collector�Emitter Voltage|VCES|650|V| |Gate�Emitter Voltage|VGE|±20|V| |Continuous Collector Current @ TC= 80°C (TJ= 175°C)|IC|42|A| |Pulsed Collector Current (TJ= 175°C)|ICpulse|126|A| |Maximum Power Dissipation (TJ= 175°C)|Ptot|146|W| |Minimum Operating Junction Temperature|TJMIN|−40|°C| |Maximum Operating Junction Temperature|TJMAX|175|°C| |**THERMAL PROPERTIES**|||| |Storage Temperature range|Tstg|�40 to 150|°C| |**INSULATION PROPERTIES**|||| |Isolation Test Voltage, t = 1 sec, 60 Hz|Vis|3000|VRMS| |Creepage Distance||12.7|mm| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. ## **RECOMMENDED OPERATING CONDITIONS** |**RECOMMENDED OPERATING CONDITIONS**||||| |---|---|---|---|---| |**Rating**|**Symbol**|**Min**|**Max**|**Unit**| |Module Operating Junction Temperature|TJ|−40|150|°C| Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. **www.onsemi.com** **2** **NXH40T120L3Q1** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C Unless Otherwise Noted) |**Parameter**|**Test Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**IGBT CHARACTERISTICS (Q1, Q4, Q5, Q8, Q9, Q12)**||||||| |Collector−Emitter Cutoff Current|VGE= 0 V, VCE= 1200 V|ICES|–|–|400|�A| |Collector−Emitter Saturation Voltage|VGE= 15 V, IC= 40 A, TJ= 25°C|VCE(sat)|–|1.85|2.20|V| ||VGE= 15 V, IC= 40 A , TJ= 150°C||–|2.25|–|| |Gate−Emitter Threshold Voltage|VGE= VCE, IC= 1.5 mA|VGE(TH)|4.50|−|6.50|V| |Gate Leakage Current|VGE= 20 V, VCE= 0 V|IGES|–|–|800|nA| |Turn−on Delay Time|TJ= 25°C
VCE= 350 V, IC= 28 A,
VGE=±15 V, RG= 8�|td(on)|–|63|–|ns| |Rise Time||tr|–|22|–|| |Turn−off Delay Time||td(off)|–|199|–|| |Fall Time||tf|–|23|–|| |Turn−on Switching Loss per Pulse||Eon|–|560|–|�J| |Turn off Switching Loss per Pulse||Eoff|–|338|–|| |Turn−on Delay Time|TJ= 125°C
VCE= 350 V, IC= 28 A,
VGE=±15 V, RG= 8�|td(on)|–|59|–|ns| |Rise Time||tr|–|24|–|| |Turn−off Delay Time||td(off)|–|225|–|| |Fall Time||tf|–|80|–|| |Turn�on Switching Loss per Pulse||Eon|–|757|–|�J| |Turn off Switching Loss per Pulse||Eoff|–|910|–|| |Input Capacitance|VCE= 20 V VGE= 0 V, f = 1 MHz|Cies|–|7753|–|pF| |Output Capacitance||Coes|–|227|–|| |Reverse Transfer Capacitance||Cres|–|127|–|| |Total Gate Charge|VCE= 350 V, IC= 40 A, VGE=±15 V|Qg|–|536|–|nC| |Thermal Resistance�chip−to−heatsink|Thermal grease, Thickness≤ 2.25 Mil,
λ= 2.9 W/mK|RthJH|–|1.01|–|°C/W| |**DIODE CHARACTERISTICS (D1, D4, D5,**|**D8, D9, D12)**|||||| |Diode Forward Voltage|IF= 20 A, TJ= 25°C|VF|–|2.4|2.7|V| ||IF= 20 A, TJ= 150°C||–|1.7|–|| |Reverse Recovery Time|TJ= 25°C
VCE= 350 V, IC= 28 A,
VGE=±15 V, RG= 16�|trr|–|43|–|ns| |Reverse Recovery Charge||Qrr|–|756|–|�C| |Peak Reverse Recovery Current||IRRM|–|35|–|A| |Peak Rate of Fall of Recovery Current||di/dt|–|750|–|A/�s| |Reverse Recovery Energy||Err|–|104|–|�J| |Reverse Recovery Time|TJ= 125°C
VCE= 350 V, IC= 28 A,
VGE=±15 V, RG= 16�|trr|–|129|–|ns| |Reverse Recovery Charge||Qrr|–|2702|–|�C| |Peak Reverse Recovery Current||IRRM|–|45|–|A| |Peak Rate of Fall of Recovery Current||di/dt|–|407|–|A/�s| |Reverse Recovery Energy||Err|–|428|–|�J| |Thermal Resistance�chip−to−heatsink|Thermal grease, Thickness≤2.25 Mil,
λ= 2.9 W/mK|RthJH|–|1.63|–|°C/W| **www.onsemi.com** **3** **NXH40T120L3Q1** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C Unless Otherwise Noted) (continued) |**Parameter**|**Test Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**IGBT CHARACTERISTICS (Q2, Q3, Q6, Q7, Q10, Q11)**||||||| |Collector−Emitter Cutoff Current|VGE= 0 V, VCE= 650 V|ICES|–|–|250|�A| |Collector−Emitter Saturation Voltage|VGE= 15 V, IC= 50 A, TJ= 25°C|VCE(sat)|–|1.50|−|V| ||VGE= 15 V, IC= 50 A , TJ= 150°C||–|1.53|–|| |Gate−Emitter Threshold Voltage|VGE= VCE, IC= 1.65 mA|VGE(TH)|2.60|4.40|6.40|V| |Gate Leakage Current|VGE= 20 V, VCE= 0 V|IGES|–|–|400|nA| |Turn−on Delay Time|TJ= 25°C
VCE= 350 V, IC= 28 A,
VGE=±15 V, RG= 16�|td(on)|–|54|–|ns| |Rise Time||tr|–|15|–|| |Turn−off Delay Time||td(off)|–|157|–|| |Fall Time||tf|–|12|–|| |Turn−on Switching Loss per Pulse||Eon|–|416|–|�J| |Turn off Switching Loss per Pulse||Eoff|–|321|–|| |Turn−on Delay Time|TJ= 125°C
VCE= 350 V, IC= 28 A,
VGE=±15 V, RG= 16�|td(on)|–|52|–|ns| |Rise Time||tr|–|16|–|| |Turn−off Delay Time||td(off)|–|178|–|| |Fall Time||tf|–|18|–|| |Turn�on Switching Loss per Pulse||Eon|–|671|–|�J| |Turn off Switching Loss per Pulse||Eoff|–|444|–|| |Input Capacitance|VCE= 20 V VGE= 0 V, f = 1 MHz|Cies|–|3137|–|pF| |Output Capacitance||Coes|–|146|–|| |Reverse Transfer Capacitance||Cres|–|17|–|| |Total Gate Charge|VCE= 350 V, IC= 40 A, VGE=±15 V|Qg|–|180|–|nC| |Thermal Resistance�chip−to−heatsink|Thermal grease, Thickness≤ 2.25 Mil,
λ= 2.9 W/mK|RthJH|–|0.995|–|°C/W| |**DIODE CHARACTERISTICS (D2, D3, D6,**|**D7, D10, D11)**|||||| |Diode Forward Voltage|IF= 20 A, TJ= 25°C|VF|–|1.28|−|V| ||IF= 20 A, TJ= 150°C||–|1.18|–|| |Combined IGBT + Diode Voltage Drop|IF= 20 A, TJ= 25°C|VF|–|3.05|3.4|V| |Reverse Recovery Time|TJ= 25°C
VCE= 350 V, IC= 28 A,
VGE=±15 V, RG= 8�|trr|–|69|–|ns| |Reverse Recovery Charge||Qrr|–|1267|–|�C| |Peak Reverse Recovery Current||IRRM|–|41|–|A| |Peak Rate of Fall of Recovery Current||di/dt|–|1599|–|A/�s| |Reverse Recovery Energy||Err|–|244|–|�J| |Reverse Recovery Time|TJ= 125°C
VCE= 350 V, IC= 28 A,
VGE=±15 V, RG= 8�|trr|–|111|–|ns| |Reverse Recovery Charge||Qrr|–|2323|–|�C| |Peak Reverse Recovery Current||IRRM|–|40|–|A| |Peak Rate of Fall of Recovery Current||di/dt|–|470|–|A/�s| |Reverse Recovery Energy||Err|–|510|–|�J| **www.onsemi.com** **4** **NXH40T120L3Q1** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C Unless Otherwise Noted) (continued) |**Parameter**|**Test Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**THERMISTOR CHARACTERISTICS**||||||| |Nominal resistance|T = 25°C|R25||22||k�| |Nominal resistance|T = 100°C|R100||1468||�| |Deviation of R25||R/R|�5||5|%| |Power dissipation||PD||200||mW| |Power dissipation constant||||2||mW/K| |B−value|B(25/50), tolerance±3%|||3950||K| |B−value|B(25/100), tolerance±3%|||3998||K| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **ORDERING INFORMATION** |**Orderable Part Number**|**Marking**|**Package**|**Shipping**| |---|---|---|---| |NXH40T120L3Q1PG|NXH40T120L3Q1PG|Q1 3−Phase TNPC�Case 180AS
Press−fit Pins (Pb−Free)|21 Units / Blister Tray| |NXH40T120L3Q1SG|NXH40T120L3Q1SG|Q1 3−Phase TNPC�Case 180BN
Solder Pins (Pb−Free)|21 Units / Blister Tray| |NXH40T120L3Q1PTG|NXH40T120L3Q1PTG|Q1 3−Phase TNPC�Case 180AS
Press−fit Pins (Pb−Free)|21 Units / Blister Tray| **www.onsemi.com** **5** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT (Q1, Q4, Q5, Q8, Q9, Q12) AND DIODE (D1, D4, D5, D8, D9, D12)** **Figure 2. Typical Output Characteristics** **Figure 3. Typical Output Characteristics** **Figure 4. Typical Transfer Characteristics** **Figure 5. Diode Forward Characteristics** **www.onsemi.com** **6** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT (Q1, Q4, Q5, Q8, Q9, Q12) AND DIODE (D1, D4, D5, D8, D9, D12)** **Figure 6. Transient Thermal Impedance (Half Bridge IGBT)** **Figure 7. Transient Thermal Impedance (Half Bridge Diode)** **www.onsemi.com** **7** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT (Q1, Q4, Q5, Q8, Q9, Q12) AND DIODE (D1, D4, D5, D8, D9, D12)** **Figure 8. FBSOA** **Figure 9. RBSOA** **Figure 10. Gate Voltage vs. Gate Charge** **www.onsemi.com** **8** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − NP IGBT + DIODE (Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11)** **Figure 11. Typical Output Characteristics (IC versus VDT)** **Figure 12. Typical Output Characteristics (IC versus VDT)** **Figure 13. Typical Transfer Characteristics** **www.onsemi.com** **9** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − NP IGBT + DIODE (Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11)** **Figure 14. Transient Thermal Impedance (Neutral Point IGBT + Diode)** **Figure 15. FBSOA (NP IGBT + Diode)** **Figure 16. RBSOA (NP IGBT + Diode)** **Figure 17. Gate Voltage vs. Gate Charge** **www.onsemi.com** **10** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE** **Figure 18. Typical Switching Loss EON vs. IC** **Figure 19. Typical Switching Loss EOFF vs. IC** **Figure 20. Typical Switching Loss EON vs. RG** **Figure 21. Typical Switching Loss EOFF vs. RG** **Figure 22. Typical Switching Time TDOFF vs. IC** **Figure 23. Typical Switching Time TDON vs. IC** **www.onsemi.com** **11** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE** **Figure 24. Typical Switching Time TDOFF vs. RG** **Figure 25. Typical Switching Time TDON vs. RG** **Figure 26. Typical Reverse Recovery Energy Loss vs. IC** **Figure 27. Typical Reverse Recovery Energy Loss vs. RG** **==> picture [195 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 28. Typical Reverse Recovery Time vs.
RG
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**Figure 29. Typical Reverse Recovery Charge vs. RG** **www.onsemi.com** **12** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE** **Figure 30. Typical Reverse Recovery Peak Current vs. RG** **Figure 31. Typical di/dt vs. RG** **Figure 32. Typical Reverse Recovery Time vs. IC** **==> picture [191 x 21] intentionally omitted <==** **----- Start of picture text -----**
Figure 33. Typical Reverse Recovery Charge
vs. IC
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**Figure 34. Typical Reverse Recovery Current Figure 35. Typical di/dt Current Slope vs. IC vs. IC** **www.onsemi.com** **13** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE** **Figure 36. Typical Turn ON Loss vs. IC** **Figure 37. Typical Turn OFF Loss vs. IC** **Figure 38. Typical Turn ON Loss vs. RG** **Figure 39. Typical Turn OFF Loss vs. RG** **Figure 40. Typical Turn−Off Switching Time vs.** **==> picture [9 x 9] intentionally omitted <==** **----- Start of picture text -----**
IC
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**==> picture [199 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 41. Typical Turn−On Switching Time vs.
IC
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**www.onsemi.com** **14** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE** **Figure 42. Typical Turn−Off Switching Time vs. RG** **==> picture [199 x 21] intentionally omitted <==** **----- Start of picture text -----**
Figure 43. Typical Turn−On Switching Time vs.
RG
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**Figure 44. Typical Reverse Recovery Energy Loss vs. IC** **Figure 45. Typical Reverse Recovery Energy Loss vs. RG** **Figure 46. Typical Reverse Recovery Time vs. RG** **Figure 47. Typical Reverse Recovery Charge vs. RG** **www.onsemi.com** **15** **NXH40T120L3Q1** ## **TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE** **Figure 48. Typical Reverse Recovery Peak Current vs. RG** **Figure 49. Typical di/dt vs. RG** **Figure 50. Typical Reverse Recovery Time vs.** **==> picture [9 x 10] intentionally omitted <==** **----- Start of picture text -----**
IC
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**Figure 51. Typical Reverse Recovery Charge vs. IC** **Figure 52. Typical Reverse Recovery Current vs. IC** **Figure 53. Typical di/dt Current Slope vs. IC** **www.onsemi.com** **16** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** DATE 25 JUN 2018 ## **PIM44, 71x37.4** CASE 180AS ISSUE O ## **DOCUMENT NUMBER:** ## **DESCRIPTION:** ## **98AON92314G** ## **PIM44, 71x37.4** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 DATE 15 JUN 2018 **PIM44, 71x37.4** CASE 180AS ISSUE O **GENERIC** ~~NE~~ Le **MARKING DIAGRAM*** XXXXXXXXXXXXXXXXXXXXXG ATYYWW ~~[__l]]~~ XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. **DOCUMENT NUMBER: 98AON92314G DESCRIPTION: PIM44, 71x37.4** ~~_ 1~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 2 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. **www.onsemi.com** **2** www.onsemi.com © Semiconductor Components Industries, LLC, 2018 ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [134 x 29] intentionally omitted <==** **----- Start of picture text -----**
PIM44, 71x37.4 (SOLDER PINS)
CASE 180BN
ISSUE O
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## DATE 08 OCT 2019 **GENERIC MARKING DIAGRAM*** XXXXXXXXXXXXXXXXXXXXXG ATYYWW XXXXX = Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **DOCUMENT NUMBER: 98AON12615H** ## **DESCRIPTION: PIM44, 71x37.4 (SOLDER PINS)** ## ## **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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