# Power MOSFET, N Channel, 80 V, 241.3 A, 0.0017 ohm, TO-LL, Surface Mount

![Product image](https://novapart.co/image/farnell:3766228RL/)

**URL**: https://novapart.co/products/NVBLS1D7N08H/power-mosfet-n-channel-80-v-2413-a-00017-ohm-to-ll
**SKU**: NVBLS1D7N08H
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1300
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 237.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 237.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.00129ohm |
| Transistor Case Style | TO-LL |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 241.3A |
| Drain Source On State Resistance | 0.0017ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3766228RL/)

## MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m 241.3 A 

## NVBLS1D7N08H 

## **Features** 

- Low R to Minimize Conduction Losses DS(on) 

**www.onsemi.com** 

- Low QG and Capacitance to Minimize Driver Losses 

- AEC−Q101 Qualified and PPAP Capable 

- Lowers Switching Noise/EMI 

- These Devices are Pb−Free and are RoHS Compliant 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

||||~~Ds~~|~~Ge~~||
|---|---|---|---|---|---|
|**Parameter**<br>~~es~~|||**Symbol**<br>~~es~~<br>~~Ds~~<br>~~Gs~~|**Value**<br>~~es~~<br>~~Ge~~<br>~~Se~~|**Unit**<br>~~es~~<br>~~ee~~|
|Drain−to−Source Voltage<br>~~es~~<br>~~Pos~~|||VDSS<br>~~Ds ~~<br>~~es~~<br>~~Gs~~<br>~~Gs~~<br>|80<br> ~~Ge~~<br>~~es~~<br>~~Se~~<br>~~Ge~~<br>|V<br>~~es~~<br>~~ee~~<br>|
|Gate−to−Source Voltage<br>~~es~~<br>~~Pos~~|||VGS<br>~~Gs ~~<br>~~es~~<br>~~Gs~~<br>|±20<br> ~~Se~~<br>~~es~~<br>~~Ge~~<br>|V<br>~~ee~~<br>~~es~~<br>|
|Continuous Drain<br>Current R JC<br>(Notes 1, 3)<br>~~es~~<br>~~Pos|~~<br>~~a~~|Steady<br>State<br>~~es~~<br>~~| RS~~<br>~~|~~<br> ~~eee~~<br>~~|~~|TC= 25°C<br>~~es~~<br>~~RS~~<br>~~|~~<br>|ID<br>~~es~~<br>~~Gs~~<br>~~RS~~<br>~~|~~<br>~~ee~~|241.3<br>~~es~~<br>~~Ge~~<br>~~RS~~<br>~~||~~<br>|A<br>~~es~~<br>~~RS~~<br>~~ee~~|
|||TC= 100°C<br>~~RS~~<br>~~|~~<br>~~eee~~||170.6<br>~~Ge~~<br>~~RS~~<br>~~||~~<br>~~ee~~||
|Power Dissipation<br>R JC(Note 1)<br>~~|~~<br>~~a~~||TC= 25°C<br>~~RS~~<br>~~|~~<br>~~eee~~<br>~~|~~|PD<br>~~RS~~<br>~~|~~<br>~~ee~~<br>~~|~~|237.5<br>~~RS~~<br>~~||~~<br>~~ee~~<br>~~|~~|W<br>~~RS~~<br>~~ee~~|
|||TC= 100°C<br>~~|~~<br>~~eee~~<br>~~|~~||118.7<br>~~| |~~<br>~~ee~~<br>~~|~~||
|Continuous Drain<br>Current R JA<br>(Notes 1, 2, 3)<br> <br>~~eS~~<br>~~a~~|Steady<br>State<br> ~~eee~~<br>~~|~~<br>~~eS~~<br>~~|~~<br>~~|~~|TA= 25°C<br>~~eee ~~<br>~~|~~<br>~~eS~~<br>~~|~~|ID<br> ~~ee~~<br>~~|~~<br>~~eS~~<br>~~|~~|33<br>~~ee~~<br>~~|~~<br>~~eS~~<br>~~||~~|A<br>~~ee~~<br>~~eS~~|
|||TA= 100°C<br>~~eS~~<br>~~|~~||23.3<br>~~eS~~<br>~~||~~||
|Power Dissipation<br>R JA(Notes 1, 2)<br>~~a~~||TA= 25°C<br>~~|~~<br>~~|~~|PD<br>~~|~~<br>~~|~~|4.4<br>~~||~~<br>~~|~~|W|
|||TA= 100°C<br>~~|~~<br>~~|~~||2.2<br>~~| |~~<br>~~|~~||
|Pulsed Drain Current|TA= 25°C, tp= 10 s<br>~~|~~||IDM<br>~~|~~|900<br>~~|~~|A|
|Operating Junction and Storage Temperature<br>Range|||TJ, Tstg<br>~~a~~|−55 to<br>+175|°C|
|Source Current (Body Diode)<br>~~ee~~|||IS<br>~~ee~~<br>~~a~~|197.9<br>~~ee~~|A<br>~~ee~~|
|Single Pulse Drain−to−Source Avalanche<br>Energy (IL(pk)= 21 A)<br>~~ee~~|||EAS<br>~~ee~~<br>~~a~~|1172<br>~~ee~~|mJ<br>~~ee~~|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)|||TL<br>~~a~~|260|°C|



**V(BR)DSS RDS(ON) MAX ID MAX** 80 V 1.7 m @ 10 V 241.3 A ~~eeee ee~~ 

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D<br>G<br>S<br>N−CHANNEL MOSFET<br>**----- End of picture text -----**<br>


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TOLL<br>CASE 100CU<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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AYWWZZ<br>1D7N08H<br>**----- End of picture text -----**<br>


A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability 1D7N08H = Specific Device Code 

2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **NVBLS1D7N08H/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **January, 2021 − Rev. 1** 

## **NVBLS1D7N08H** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TJ|= 25°C unless|otherwise noted)|otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|80|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ||||57||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 80 V|TJ= 25°C|||10|�A|
||||TJ= 125°C|||250||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 479�A||2.0|2.9|4.0|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ|ID= 479�A, ref to 25°C|||−7.3||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 80 A||1.29|1.7|m�|
|Forward Transconductance|gFS|VDS=5 V, ID= 80 A|||271||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 40 V|||7675||pF|
|Output Capacitance|COSS||||1059|||
|Reverse Transfer Capacitance|CRSS||||41|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 40 V; ID= 80 A|||121||nC|
|Threshold Gate Charge|QG(TH)||||19|||
|Gate−to−Source Charge|QGS||||32|||
|Gate−to−Drain Charge|QGD||||29|||
|Plateau Voltage|VGP||||4.5||V|
|**SWITCHING CHARACTERISTICS**(Note 4)||||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 40 V,<br>ID= 80 A, RG= 6�|||29||ns|
|Rise Time|tr||||25|||
|Turn−Off Delay Time|td(OFF)||||89|||
|Fall Time|tf||||35|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 80 A|TJ= 25°C||0.82|1.2|V|
||||TJ= 125°C||0.69|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 43 A|||73||ns|
|Reverse Recovery Charge|QRR||||138||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Switching characteristics are independent of operating junction temperatures. 

**www.onsemi.com** 

**2** 

**NVBLS1D7N08H** 

## **TYPICAL CHARACTERISTICS** 

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250 250<br>10 V 8 V 6 V 5.0 V<br>VDS = 5 V<br>200 200<br>150 150<br>VGS = 4.5 V TJ = 25 ° C<br>100 100<br>50 50<br>4.0 V<br>0 0 TJ = 175 ° C TJ = −55 ° C<br>0 1 2 3 4 5 2 3 4 5 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>50 4.0<br>ID = 80 A<br>40<br>3.0<br>30<br>2.0<br>20 VGS = 10 V<br>1.0<br>10 °<br>TJ = 150 ° C T J  = 25 C<br>0 0.5<br>3 4 5 6 7 8 9 10 0 50 100 150 200 250<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.4 1E−03<br>2.2 VGS = 10 V TJ = 175 ° C<br>ID = 80 A 1E−04 TJ = 150 ° C<br>2.0<br>TJ = 125 ° C<br>1.8 1E−05 TJ = 100 ° C<br>1.6 T J  = 85 ° C<br>1E−06<br>1.4<br>1.2 1E−07 TJ = 25 ° C<br>1.0<br>1E−08<br>0.8<br>0.6 1E−09<br>−75 −50 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) �<br>) �<br>, ON−RESISTANCE (m<br>DS(on)<br>R<br>, DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on)<br>R<br>, NORMALIZED DRAIN−TO−<br>SOURCE ON−RESISTANCE<br>DS(on) , REVERSE LEAKAGE CURRENT (A)<br>R IDSS<br>**----- End of picture text -----**<br>


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**3** 

**NVBLS1D7N08H** 

## **TYPICAL CHARACTERISTICS** 

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100K<br>C ISS<br>10K<br>C OSS<br>1K<br>100 CRSS<br>10<br>VGS = 0 V<br>f = 1 MHz<br>1<br>0.1 1 10 80<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 7. Capacitance Variation<br>1000<br>td(off)<br>tf<br>tr<br>100<br>td(on)<br>10<br>0 5 10 15 20 25 30 35 40 45 50<br>C, CAPACITANCE (pF)<br>t, SWITCHING TIME (ns)<br>**----- End of picture text -----**<br>


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RG, GATE RESISTANCE ( � )<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

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1000<br>100<br>10  � s<br>10<br>TC = 25 ° C 0.5 ms<br>Single Pulse<br>1 ms<br>1 V GS ≤  10 V<br>RDS(on) Limit 10 ms<br>Thermal Limit<br>Package Limit<br>0.1<br>0.1 1 10 100 1000<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

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10<br>ID = 80 A VDD = 40 V<br>8<br>VDD = 30 V VDD = 50 V<br>6<br>4<br>2<br>0<br>0 26 52 78 104 130<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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QG, TOTAL GATE CHARGE (nC)<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source Voltage vs. Total Charge** 

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250<br>VGS = 0 V<br>200<br>150<br>100<br>50<br>TJ = 175 ° C TJ = 25 ° C TJ = −55 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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VSD, BODY DIODE FORWARD VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 10. Diode Forward Voltage vs. Current** 

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1000<br>100<br>TJ(initial) = 25 ° C<br>TJ(initial) = 100 ° C<br>10<br>1<br>0.0001 0.001 0.01<br>tAV, TIME IN AVALANCHE (s)<br> (A)<br>IPEAK<br>**----- End of picture text -----**<br>


**Figure 12. Maximum Drain Current vs. Time in Avalanche** 

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**4** 

**NVBLS1D7N08H** 

## **TYPICAL CHARACTERISTICS** 

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100<br>Duty Cycle = 0.5<br>10 0.2<br>0.1<br>0.05<br>1 0.02<br>0.01<br>0.1<br>0.01<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (s)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 13. Transient Thermal Impedance** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NVBLS1D7N08H|1D7N08H|H−PSOF8L<br>(Pb−Free)|2000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**5** 

**NVBLS1D7N08H** 

## **PACKAGE DIMENSIONS** 

**H−PSOF8L 11.68x9.80** CASE 100CU ISSUE A 

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**www.onsemi.com** 

**6** 

**NVBLS1D7N08H** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **Email Requests to:** orderlit@onsemi.com 

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**TECHNICAL SUPPORT North American Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 

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**7** 



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