# Bipolar Pre-Biased / Digital Transistor, 10 kohm

![Product image](https://novapart.co/image/farnell:3617383/)

**URL**: https://novapart.co/products/NUS2401SNT1G/bipolar-pre-biased-digital-transistor-10-kohm
**SKU**: NUS2401SNT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Pre-Biased / Digital Bipolar Transistors
**Price**: €0.2170
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6 Pin |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN and PNP Complement |
| Transistor Case Style | SC-74 |
| Base Input Resistor R1 | 10kohm |
| Dc Current Gain Hfe Min | 150hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 200mA |
| Collector Emitter Voltage Max Npn | 50V |
| Collector Emitter Voltage Max Pnp | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3617383/)

## NUS2401SNT1 

## Integrated PNP/NPN Digital Transistors Array 

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This new option of integrated digital transistors is designed to<br>replace a discrete solution array of three transistors and their external<br>resistor bias network. BRTs (Bias Resistor Transistors) contain a<br>single transistor with a monolithic bias network consisting of two http://onsemi.com<br>resistors; a series base resistor and a base−emitter resistor. The BRT<br>technology eliminates these individual components by integrating (6) (5) (4)<br>them into a single device, therefore the integration of three BRTs<br>results in a significant reduction of both system cost and board space.<br>This new device is packaged in the SC−74/Case 318F package which Q3<br>is designed for low power surface mount applications.<br>Features<br>• Integrated Design<br>• Reduces Board Space and Components Count Q1 Q2<br>• a<br>Simplifies Circuitry Design<br>(1) (2) (3)<br>• Offered in Surface Mount Package Technology (SC−74)<br>• Available in 3000 Unit Tape and Reel<br>MARKING<br>• Pb−Free Package is Available 6 DIAGRAM<br>Applications 1<br>• Audio Muting Applications CASE 318FSC−74 50 M<br>• Drive Circuits Applications STYLE 4<br>• Industrial: Small Appliances, Security Systems, Automated Test<br>fan<br>• Consumer: TVs and VCRs, Stereo Receivers, CD Players,<br>Cassette Recorders 50 = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


## **Features** 

- Integrated Design 

- Reduces Board Space and Components Count 

- Simplifies Circuitry Design 

- Offered in Surface Mount Package Technology (SC−74) 

- Available in 3000 Unit Tape and Reel 

- Pb−Free Package is Available 

## **Applications** 

- Audio Muting Applications 

- Drive Circuits Applications 

- Industrial: Small Appliances, Security Systems, Automated Test 

- Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette Recorders 

**MAXIMUM RATINGS** (Maximum ratings are those values beyond which (Note: Microdot may be in either location) device damage can occur. Electrical Characteristics are not guaranteed over *Date Code orientation may vary depending this range.) upon manufacturing location. **Rating Symbol Value Unit ORDERING INFORMATION** Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc **Device Package Shipping**[[†]] Emitter−Base Voltage V(BR)EBO 7.0 Vdc NUS2401SNT1 SC−74 3000/Tape & Reel Collector Current − Continuous IC 200 mAdc NUS2401SNT1G SC−74 3000/Tape & Reel (Pb−Free) **THERMAL CHARACTERISTICS** ~~S55 SS~~ **Characteristic Symbol Max Unit** †For information on tape and reel specifications, including part orientation and tape sizes, please Power Dissipation PD 350 mW refer to our Tape and Reel Packaging Specifications Junction Temperature TJ 150 ° C Brochure, BRD8011/D. ~~————~~ Storage Temperature Tstg −55 to +150 ° C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

**ORDERING INFORMATION Device Package Shipping**[[†]] NUS2401SNT1 SC−74 3000/Tape & Reel NUS2401SNT1G SC−74 3000/Tape & Reel (Pb−Free) ~~SS~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NUS2401SNT1/D** 

© Semiconductor Components Industries, LLC, 2006 **March, 2006  − Rev. 3** 

**NUS2401SNT1** 

## **ELECTRICAL CHARACTERISTICS** 

(Unless otherwise noted: TJ = 25 ° C for typical values, common for Q1, Q2, and Q3, − minus signed for Q3 (PNP) omitted.) 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||
|Collector−Base Cutoff Current (VCB= 50 V, IE= 0)|ICBO|−|−|100|nAdc|
|Collector−Emitter Cutoff Current (VCE= 50 V, IB= 0)|ICEO|−|−|500|nAdc|
|Emitter−Base Cutoff Current (VCE= 6.0 V, IC= 0)<br>Q3<br>Q1, Q2|IEBO|−<br>−|−<br>−|500<br>0.1|�A|
|Collector−Base Breakdown Voltage (IC= 10�A, IE= 0)|V(BR)CBO|50|−|−|V|
|Collector−Emitter Breakdown Voltage (Note 1)<br>(IC= 2.0 mA, IB= 0)|V(BR)CEO|50|−|−|V|
|**ON CHARACTERISTICS**(Note 1)||||||
|DC Current Gain<br>Q3<br>Q1, Q2|hFE|35<br>150|60<br>350|−<br>−||
|Collector−Emitter Saturation Voltage<br>(IC= 10 mA, IB= 0.3 mA)<br>Q3<br>(IC= 10 mA, IB= 1.0 mA)<br>Q1, Q2|VCE(sat)|−<br>−|−<br>−|0.25<br>0.25|Vdc|
|Output Voltage (on) (VCC= 5.0 V, VB= 2.5 V, RL= 1.0 k�)|VOL|−|−|0.2|V|
|Output Voltage (off) (VCC= 5.0 V, VB= 0.25 V, RL= 1.0 k�)|VOH|4.9|−|−|V|
|Input Resistor<br>Q3<br>Q1, Q2|R1|7.0<br>0.13|10<br>0.175|13<br>0.22|k�|
|Resistor Ratio<br>Q3<br>Q1, Q2|R1/R2|−<br>−|1.0<br>∞|−<br>−||



1. Pulse Test: Pulse Width < 300 � s, Duty Cycle < 2%. 

**http://onsemi.com** 

**2** 

**NUS2401SNT1** 

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400 1<br>350<br>300<br>250 TA = −25 ° C<br>200 0.1 75 ° C<br>150 25 ° C<br>100 R � JA = 357 ° C/W<br>50<br>IC/IB = 10<br>0 0.01<br>−50 0 50 100 150 0 10 20 30 40 50 60 70 80<br>TA, AMBIENT TEMPERATURE ( ° C) IC, COLLECTOR CURRENT (mA)<br>Figure 1. Derating Curve Figure 2. Maximum Collector Voltage versus<br>Collector Current<br>1000 6<br>75 ° C f = 1 MHz<br>5 IE = 0 V<br>25 ° C TA = 25 ° C<br>TA = −25 ° C 4<br>100 3<br>2<br>VCE = 10 V<br>1<br>10 0<br>1 10 100 0 10 20 30 40 50 60<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. DC Current Gain Figure 4. Output Capacitance<br>100 10<br>25 ° C<br>TA = 75 ° C<br>−25 ° C 25 ° C<br>−25 ° C<br>10 1<br>TA = 75 ° C<br>VO = 5 V<br>VO = 0.2 V<br>1 0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 10 20 30 40 50 60<br>Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>, MAXIMUM COLLECTOR VOLTAGE (V)<br>CE(sat)<br>V<br>, DC CURRENT GAIN , CAPACITANCE (pF)<br>FE ob<br>h C<br>, INPUT VOLTAGE (V)<br>in<br>V<br>, COLLECTOR CURRENT (mA)<br>IC<br>**----- End of picture text -----**<br>


**Figure 5. Output Current versus Input Voltage** 

**Figure 6. Input Voltage versus Output Current** 

**http://onsemi.com** 

**3** 

**NUS2401SNT1** 

## **TYPICAL ELECTRICAL CHARACTERISTICS − Q3 (PNP)** 

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1 1000<br>IC/IB = 10 VCE = 10 V<br>TA�=�−25°C TA�=�75°C<br>25°C<br>�0.1 25°C 100 −25°C<br>75°C<br>�0.01 10<br>0 �20 �40 50 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain<br>4 100 75°C 25°C<br>f = 1 MHz<br>3 lTEA = 0 V = 25°C 10 TA�=�−25°C<br>1<br>2<br>�0.1<br>1<br>�0.01 VO = 5 V<br>0 �0.001<br>0 10 20 30 40 50 0 1 �2 3 �4 �5 �6 �7 �8 �9 10<br>VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)<br>Cob, CAPACITANCE (pF)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 9. Output Capacitance** 

**Figure 10. Output Current versus Input Voltage** 

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100<br>VO = 0.2 V<br>TA�=�−25°C<br>10<br>25°C<br>75°C<br>1<br>�0.1<br>0 10 �20 �30 �40 �50<br>IC, COLLECTOR CURRENT (mA)<br>Vin, INPUT VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 11. Input Voltage versus Output Current** 

**http://onsemi.com** 

**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SC−74<br>6 CASE 318F<br>ISSUE P<br>1<br>SCALE 2:1<br>**----- End of picture text -----**<br>


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DATE 07 OCT 2021<br>**----- End of picture text -----**<br>


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## **GENERIC MARKING DIAGRAM*** 

XXX M � � XXX = Specific Device Code M = Date Code � = Pb−Free Package 

(Note: Microdot may be in either location) 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: STYLE 2: STYLE 3: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. EMITTER 1 2. ANODE 2. COLLECTOR 2. BASE 1 3. CATHODE 3. EMITTER 3. COLLECTOR 2 4. CATHODE 4. NO CONNECTION 4. EMITTER 2 5. ANODE 5. COLLECTOR 5. BASE 2 6. CATHODE 6. BASE 6. COLLECTOR 1 

STYLE 7: STYLE 8: STYLE 9: PIN 1. SOURCE 1 PIN 1. EMITTER 1 PIN 1. EMITTER 2 2. GATE 1 2. BASE 2 2. BASE 2 3. DRAIN 2 3. COLLECTOR 2 3. COLLECTOR 1 4. SOURCE 2 4. EMITTER 2 4. EMITTER 1 5. GATE 2 5. BASE 1 5. BASE 1 6. DRAIN 1 6. COLLECTOR 1 6. COLLECTOR 2 

STYLE 4: STYLE 5: STYLE 6: PIN 1. COLLECTOR 2 PIN 1. CHANNEL 1 PIN 1. CATHODE 2. EMITTER 1/EMITTER 2 2. ANODE 2. ANODE 3. COLLECTOR 1 3. CHANNEL 2 3. CATHODE 4. EMITTER 3 4. CHANNEL 3 4. CATHODE 5. BASE 1/BASE 2/COLLECTOR 3 5. CATHODE 5. CATHODE 6. BASE 3 6. CHANNEL 4 6. CATHODE STYLE 10: STYLE 11: PIN 1. ANODE/CATHODE PIN 1. EMITTER 2. BASE 2. BASE 3. EMITTER 3. ANODE/CATHODE 4. COLLECTOR 4. ANODE 5. ANODE 5. CATHODE 6. CATHODE 6. COLLECTOR 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**DOCUMENT NUMBER: 98ASB42973B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SC−74 PAGE 1 OF 1** 

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