# Dual MOSFET, N Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm ![Product image](https://novapart.co/image/farnell:2533209RL/) **URL**: https://novapart.co/products/NTZD3154NT1G/dual-mosfet-n-channel-20-v-540-ma-04-ohm **SKU**: NTZD3154NT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.0830 **Stock**: 10+ **Lead Time**: 148 days (indicative) ## Description Transistor Polarity:Dual N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Transistor Case Style | SOT-563 | | Operating Temperature Max | 150°C | | Power Dissipation N Channel | 250mW | | Power Dissipation P Channel | 250mW | | Drain Source Voltage Vds N Channel | 20V | | Drain Source Voltage Vds P Channel | 20V | | Continuous Drain Current Id N Channel | 540mA | | Continuous Drain Current Id P Channel | 540mA | | Drain Source On State Resistance N Channel | 0.4ohm | | Drain Source On State Resistance P Channel | 0.4ohm | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2533209RL/) ## NTZD3154N MOSFET – Dual, N-Channel, Small Signal ~~=~~ 20 V, 540 mA ## **Features** - Low RDS(on) Improving System Efficiency - Low Threshold Voltage - Small Footprint 1.6 x 1.6 mm - ESD Protected Gate - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** - Load/Power Switches - Power Supply Converter Circuits - Battery Management - Cell Phones, Digital Cameras, PDAs, Pagers, etc. **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted.) **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 20 V ~~———~~ Gate−to−Source Voltage VGS ± 7.0 V ~~ee~~ Continuous Drain Current (Note 1) SteadyState TTAA = 25 = 85 °° CC I ~~ee~~ D 540390 mA ~~a ee~~ Power Dissipation Steady State PD 250 mW (Note 1) Continuous Drain Current TA = 25 ° C 570 mA (Note 1) t 5 s TA = 85 ° C ID 410 ~~a~~ Power Dissipation t ~~ee~~ 5 s PD 280 mW (Note 1) ~~a a~~ Pulsed Drain Current tp = 10 s ~~ee ee~~ IDM ~~ee~~ 1.5 A Operating Junction and Storage Temperature ~~ee~~ TJ, −55 to ° C TSTG 150 ~~ee~~ Source Current (Body Diode) ~~ee~~ IS ~~ee~~ 350 mA ~~a~~ Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) ~~po~~ ## **THERMAL RESISTANCE RATINGS** **Parameter Symbol Max Unit** Junction−to−Ambient – Steady State 500 ° C/W ~~Se~~ (Note 1) R JA Junction−to−Ambient – t 5 s (Note 1) 447 ~~a -—____|» } |~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **www.onsemi.com** **V(BR)DSS RDS(on) Typ ID Max** (Note 1) 400 m @ 4.5 V 20 500 m @ 2.5 V 540 mA 700 m @ 1.8 V ~~=~~ **==> picture [155 x 96] intentionally omitted <==** **----- Start of picture text -----**
D1 D2
G1 G2
N−Channel
S1 MOSFET S2
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## **MARKING DIAGRAM** **==> picture [146 x 99] intentionally omitted <==** **----- Start of picture text -----**
6
1 TV M
SOT−563−6 S
CASE 463A
aa
TV = Specific Device Code
M = Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
## **PINOUT: SOT−563** **==> picture [136 x 111] intentionally omitted <==** **----- Start of picture text -----**
S1 1 6 D1
G1 2 5 G2
D2 3 4 S2
Top View
**----- End of picture text -----**
## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1. Surface mounted on FR4 board using 1 in sq pad size - (Cu. area = 1.127 in sq [1 oz] including traces). Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **June, 2019 − Rev. 3** **NTZD3154N/D** ## **NTZD3154N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted.) |**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless o|therwise noted.)|therwise noted.)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||20|−|−|V| |Drain−to−Source Breakdown Voltage Tem-
perature Coefficient|V(BR)DSS/TJ|−||−|14|−|mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V
VDS= 16 V|TJ= 25°C|−|−|1.0|�A| ||||TJ= 125°C|−|−|5.0|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�4.5 V||−|−|�5.0|�A| |**ON CHARACTERISTICS**(Note 3)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||0.45|−|1.0|V| |Negative Threshold Temperature Coefficient|VGS(TH)/TJ|−||−|2.0|−|mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 4.5 V, ID= 540 mA||−|0.4|0.55|�| |||VGS= 2.5 V, ID= 500 mA||−|0.5|0.7|| |||VGS= 1.8 V, ID= 350 mA||−|0.7|0.9|| |Forward Transconductance|gFS|VDS= 10 V, ID= 540 mA||−|1.0|−|S| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz, VDS= 16 V||−|80|150|pF| |Output Capacitance|COSS|||−|13|25|| |Reverse Transfer Capacitance|CRSS|||−|10|20|| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 10 V; ID= 540 mA||−|1.5|2.5|nC| |Threshold Gate Charge|QG(TH)|||−|0.1|−|| |Gate−to−Source Charge|QGS|||−|0.2|−|| |Gate−to−Drain Charge|QGD|||−|0.35|−|| |**SWITCHING CHARACTERISTICS, VGS = V**(Note 4)|||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDD= 10 V, ID= 540 mA,
RG= 10�||−|6.0|−|ns| |Rise Time|tr|||−|4.0|−|| |Turn−Off Delay Time|td(OFF)|||−|16|−|| |Fall Time|tf|||−|8.0|−|| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 350 mA|TJ= 25°C|−|0.7|1.2|V| ||||TJ= 125°C|−|0.6|−|| |Reverse Recovery Time|tRR|VGS= 0 V, dISD/dt= 100 A/�s, IS= 350 mA||−|6.5|−|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces). 3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 4. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTZD3154N** ## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [492 x 613] intentionally omitted <==** **----- Start of picture text -----**
1.2 1.8
1.0 5.5 V1.8 V TJ = 25 ° C 1.6 VDS � 10 V TJ = −55 ° C
1.4
VGS = 1.6 V TJ = 100 ° C
0.8 1.2
VGS = 2.0 V to 2.2 V
1.0
0.6
0.8
VGS = 1.4 V
0.4 0.6
0.4
0.2 VGS = 1.2 V TJ = 25 ° C
0.2
VGS = 1.0 V
0 0
0 1 2 3 4 5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
1.0 0.9
ID = 0.54 A TJ = 25 ° C
0.9 TJ = 25 ° C 0.8
0.8 VGS = 1.8 V
0.7
0.7
0.6
0.6
VGS = 2.5 V
0.5
0.5
VGS = 4.5 V
0.4
0.4
0.3 0.3
1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current
Gate−to−Source Voltage and Gate Voltage
2 1000
VGS = 0 V
1.8 ID = 0.54 A
VGS = 4.5 V TJ = 150 ° C
1.6
1.4
100
1.2
1
0.8 TJ = 100 ° C
0.6 10
−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE
RESISTANCE ( RESISTANCE (
, DRAIN−TO−SOURCE CURRENT DS(on)
DS(on) R
R
, LEAKAGE (nA)
, DRAIN−TO−SOURCEDS(on) IDSS
R RESISTANCE (NORMALIZED)
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**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current versus Voltage** **www.onsemi.com** **3** **NTZD3154N** ## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [492 x 178] intentionally omitted <==** **----- Start of picture text -----**
200 5 20
TJ = 25 ° C QT
150 VGS = 0 V 4 VDS 16
VGS
3 12
CRSS
100
CISS
2 8
QGS QGD
50
1 ID = 0.54 A 4
VDS = 0 V C OSS TJ = 25 ° C
0
0 0
5 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VGS VDS
Qg, TOTAL GATE CHARGE (nC)
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)
GS DS
V V
**----- End of picture text -----**
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) **Figure 7. Capacitance Variation** **==> picture [239 x 171] intentionally omitted <==** **----- Start of picture text -----**
100
VDS = 10 V
ID = 0.2 A
VGS = 4.5 V
td(OFF
)
10 tf
td(ON)
tr
1
1 10 100
RG, GATE RESISTANCE ( � )
t, TIME (ns)
**----- End of picture text -----**
**Figure 9. Resistive Switching Time Variation versus Gate Resistance** **Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge** **==> picture [239 x 171] intentionally omitted <==** **----- Start of picture text -----**
0.6
VGS = 0 V
0.5 TJ = 25 ° C
0.4
0.3
0.2
0.1
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
, SOURCE CURRENT (A)
IS
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**Figure 10. Diode Forward Voltage versus Current** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**| |NTZD3154NT1G|SOT−563
(Pb−Free)|4000 / Tape & Reel| |NTZD3154NT1H||| |NTZD3154NT2G||| |NTZD3154NT2H||| |NTZD3154NT5G||8000 / Tape & Reel| |NTZD3154NT5H||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [32 x 23] intentionally omitted <==** **----- Start of picture text -----**
6
1
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## **SOT−563, 6 LEAD** CASE 463A ISSUE H ## DATE 26 JAN 2021 **==> picture [42 x 7] intentionally omitted <==** **----- Start of picture text -----**
SCALE 4:1
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## **DOCUMENT NUMBER:** ## **98AON11126D** ## **DESCRIPTION: SOT−563, 6 LEAD** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 ## **SOT−563, 6 LEAD** CASE 463A ISSUE H ## DATE 26 JAN 2021 ## **GENERIC MARKING DIAGRAM*** XX M 1 XX = Specific Device Code M = Month Code . = Pb−Free Package - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ " ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER:** **98AON11126D** **DESCRIPTION: SOT−563, 6 LEAD** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 2 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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